The Experts below are selected from a list of 22314 Experts worldwide ranked by ideXlab platform

Frantisek Stepanek - One of the best experts on this subject based on the ideXlab platform.

  • Characterization of copper SERS-active substrates prepared by Electrochemical Deposition
    Applied Surface Science, 2009
    Co-Authors: Jitka Čejková, Vadym Prokopec, Sona Brazdova, Alzbeta Kokaislova, Pavel Matejka, Frantisek Stepanek
    Abstract:

    Surface Enhanced Raman Scattering (SERS) on copper substrates of various morphologies, prepared by Electrochemical Deposition on platinum targets, was investigated. The substrate preparation procedures differed by the coating bath compositions, applied current densities and the duration of individual steps. The surface morphology of the substrates was visualized by means of Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). SERS spectra of selected organic thiols were measured and the relation between SERS spectral intensity and the surface structure of SERS-active substrates was studied. It has been shown that good Raman surface enhancement can be achieved on the copper substrates prepared by Electrochemical Deposition from ammoniac baths. Copper substrates fabricated from acidic baths did not show efficient Raman surface enhancement. The results of microscopic measurements demonstrated that the average surface roughness value does not play a substantial role, whereas the shape of the surface nanostructures is a key parameter.

  • Characterization of copper SERS-active substrates prepared by Electrochemical Deposition
    Applied Surface Science, 2009
    Co-Authors: Jitka Čejková, Vadym Prokopec, Sona Brazdova, Alzbeta Kokaislova, Pavel Matejka, Frantisek Stepanek
    Abstract:

    Surface Enhanced Raman Scattering (SERS) on copper substrates of various morphologies, prepared by Electrochemical Deposition on platinum targets, was investigated. The substrate preparation procedures differed by the coating bath compositions, applied current densities and the duration of individual steps. The surface morphology of the substrates was visualized by means of Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). SERS spectra of selected organic thiols were measured and the relation between SERS spectral intensity and the surface structure of SERS-active substrates was studied. It has been shown that good Raman surface enhancement can be achieved on the copper substrates prepared by Electrochemical Deposition from ammoniac baths. Copper substrates fabricated from acidic baths did not show efficient Raman surface enhancement. The results of microscopic measurements demonstrated that the average surface roughness value does not play a substantial role, whereas the shape of the surface nanostructures is a key parameter. © 2009 Elsevier B.V. All rights reserved.

Peter C. Searson - One of the best experts on this subject based on the ideXlab platform.

  • Electrochemical Deposition of copper on n-SI/TIN
    1999
    Co-Authors: Gerko Oskam, John G. Long, Philippe M. Vereecken, B. J. Moran, Peter C. Searson
    Abstract:

    In this paper we report on the Electrochemical Deposition of copper onto n-type silicon with a TiN barrier film. We show that the nucleation and growth kinetics follow instantaneous nucleation followed by three dimensional, diffusion limited growth. The nucleus density was dependent on the applied potential and increased from 9 x 10 7 cm -2 at -0.25 V to 5 x 10 8 cm -2 at -0.7 V.

  • Electrochemical Deposition of metals onto silicon
    Journal of Physics D, 1998
    Co-Authors: Gerko Oskam, John G. Long, Arun Natarajan, Peter C. Searson
    Abstract:

    The general concepts governing the Electrochemical Deposition of metal films onto semiconductors are discussed. Deposition onto semiconductor surfaces is complicated due to the band structure of the semiconductor, which affects both the thermodynamics and the kinetics of metal Deposition processes. The influence of the potential distribution at the semiconductor/solution interface on the charge transfer mechanisms involved in Deposition of metals is discussed. Models for Electrochemical nucleation and growth are described and the influence of the unique physical properties of semiconductors is analysed. Finally, we present recent results for Electrochemical Deposition of gold, copper and platinum onto n-type silicon.

  • Electrochemical Deposition of Metals on Semiconductors
    MRS Proceedings, 1996
    Co-Authors: Gerko Oskam, John G. Long, Maria S. Nikolova, Peter C. Searson
    Abstract:

    ABSTRACTThe general concepts governing the Electrochemical Deposition of metal films on semiconductors are discussed, and recent results on the fabrication of Schottky junctions consisting of silicon electrodeposited with platinum, copper and gold are presented. In order to obtain good adherent metal films, the density of nuclei should be high and the films should be grown at low current densities where the charge transfer process is rate limiting. This situation can be realized using potential controlled Electrochemical Deposition. For metal Deposition on silicon, the surface should be pretreated in HF to dissolve the oxide layer. Furthermore, the surface should be stable during Deposition which can be achieved by tailoring the Deposition solutions and by using Electrochemical Deposition at negative potentials. It is shown that by using this approach, n-type silicon / Pt, Au, and Cu Schottky junctions can be fabricated of a quality comparable to that of junctions prepared by sputter and vapor Deposition techniques.

Jitka Čejková - One of the best experts on this subject based on the ideXlab platform.

  • Characterization of copper SERS-active substrates prepared by Electrochemical Deposition
    Applied Surface Science, 2009
    Co-Authors: Jitka Čejková, Vadym Prokopec, Sona Brazdova, Alzbeta Kokaislova, Pavel Matejka, Frantisek Stepanek
    Abstract:

    Surface Enhanced Raman Scattering (SERS) on copper substrates of various morphologies, prepared by Electrochemical Deposition on platinum targets, was investigated. The substrate preparation procedures differed by the coating bath compositions, applied current densities and the duration of individual steps. The surface morphology of the substrates was visualized by means of Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). SERS spectra of selected organic thiols were measured and the relation between SERS spectral intensity and the surface structure of SERS-active substrates was studied. It has been shown that good Raman surface enhancement can be achieved on the copper substrates prepared by Electrochemical Deposition from ammoniac baths. Copper substrates fabricated from acidic baths did not show efficient Raman surface enhancement. The results of microscopic measurements demonstrated that the average surface roughness value does not play a substantial role, whereas the shape of the surface nanostructures is a key parameter.

  • Characterization of copper SERS-active substrates prepared by Electrochemical Deposition
    Applied Surface Science, 2009
    Co-Authors: Jitka Čejková, Vadym Prokopec, Sona Brazdova, Alzbeta Kokaislova, Pavel Matejka, Frantisek Stepanek
    Abstract:

    Surface Enhanced Raman Scattering (SERS) on copper substrates of various morphologies, prepared by Electrochemical Deposition on platinum targets, was investigated. The substrate preparation procedures differed by the coating bath compositions, applied current densities and the duration of individual steps. The surface morphology of the substrates was visualized by means of Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). SERS spectra of selected organic thiols were measured and the relation between SERS spectral intensity and the surface structure of SERS-active substrates was studied. It has been shown that good Raman surface enhancement can be achieved on the copper substrates prepared by Electrochemical Deposition from ammoniac baths. Copper substrates fabricated from acidic baths did not show efficient Raman surface enhancement. The results of microscopic measurements demonstrated that the average surface roughness value does not play a substantial role, whereas the shape of the surface nanostructures is a key parameter. © 2009 Elsevier B.V. All rights reserved.

Gerko Oskam - One of the best experts on this subject based on the ideXlab platform.

  • Electrochemical Deposition of copper on n-SI/TIN
    1999
    Co-Authors: Gerko Oskam, John G. Long, Philippe M. Vereecken, B. J. Moran, Peter C. Searson
    Abstract:

    In this paper we report on the Electrochemical Deposition of copper onto n-type silicon with a TiN barrier film. We show that the nucleation and growth kinetics follow instantaneous nucleation followed by three dimensional, diffusion limited growth. The nucleus density was dependent on the applied potential and increased from 9 x 10 7 cm -2 at -0.25 V to 5 x 10 8 cm -2 at -0.7 V.

  • Electrochemical Deposition of metals onto silicon
    Journal of Physics D, 1998
    Co-Authors: Gerko Oskam, John G. Long, Arun Natarajan, Peter C. Searson
    Abstract:

    The general concepts governing the Electrochemical Deposition of metal films onto semiconductors are discussed. Deposition onto semiconductor surfaces is complicated due to the band structure of the semiconductor, which affects both the thermodynamics and the kinetics of metal Deposition processes. The influence of the potential distribution at the semiconductor/solution interface on the charge transfer mechanisms involved in Deposition of metals is discussed. Models for Electrochemical nucleation and growth are described and the influence of the unique physical properties of semiconductors is analysed. Finally, we present recent results for Electrochemical Deposition of gold, copper and platinum onto n-type silicon.

  • Electrochemical Deposition of Metals on Semiconductors
    MRS Proceedings, 1996
    Co-Authors: Gerko Oskam, John G. Long, Maria S. Nikolova, Peter C. Searson
    Abstract:

    ABSTRACTThe general concepts governing the Electrochemical Deposition of metal films on semiconductors are discussed, and recent results on the fabrication of Schottky junctions consisting of silicon electrodeposited with platinum, copper and gold are presented. In order to obtain good adherent metal films, the density of nuclei should be high and the films should be grown at low current densities where the charge transfer process is rate limiting. This situation can be realized using potential controlled Electrochemical Deposition. For metal Deposition on silicon, the surface should be pretreated in HF to dissolve the oxide layer. Furthermore, the surface should be stable during Deposition which can be achieved by tailoring the Deposition solutions and by using Electrochemical Deposition at negative potentials. It is shown that by using this approach, n-type silicon / Pt, Au, and Cu Schottky junctions can be fabricated of a quality comparable to that of junctions prepared by sputter and vapor Deposition techniques.

Yusuke Yamauchi - One of the best experts on this subject based on the ideXlab platform.

  • Electrochemical Deposition an advanced approach for templated synthesis of nanoporous metal architectures
    Accounts of Chemical Research, 2018
    Co-Authors: Cuiling Li, Muhammad Iqbal, Bo Jiang, Victor Malgras, Kevin C W Wu, Yusuke Yamauchi
    Abstract:

    ConspectusWell-constructed porous materials take an essential role in a wide range of applications, including energy conversion and storage systems, electrocatalysis, photocatalysis, and sensing. Although the tailored design of various nanoarchitectures has made substantial progress, simpler preparation methods are compelled to meet large-scale production requirements. Recently, advanced Electrochemical Deposition techniques have had a significant impact in terms of precise control upon the nanoporous architecture (i.e., pore size, surface area, pore structure, etc.), enabling access to a wide range of compositions. In this Account, we showcase the uniqueness of Electrochemical Deposition techniques, detail their implementation toward the synthesis of novel nanoporous metals, and finally outline the future research directions.Nanoporous metallic structures are attractive in that they can provide high surface area and large pore volume, easing mass transport of reactants and providing high accessibility to...