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Paul A. Warburton - One of the best experts on this subject based on the ideXlab platform.

  • Electron Confinement at diffuse znmgo zno interfaces
    APL Materials, 2017
    Co-Authors: Maddison L. Coke, Oscar W. Kennedy, James T. Sagar, Paul A. Warburton
    Abstract:

    Abrupt interfaces between ZnMgO and ZnO are strained due to lattice mismatch. This strain is relaxed if there is a gradual incorporation of Mg during growth, resulting in a diffuse interface. This strain relaxation is however accompanied by reduced Confinement and enhanced Mg-ion scattering of the confined Electrons at the interface. Here we experimentally study the Electronic transport properties of the diffuse heteroepitaxial interface between single-crystal ZnO and ZnMgO films grown by molecular-beam epitaxy. The spatial extent of the interface region is controlled during growth by varying the zinc flux. We show that, as the spatial extent of the graded interface is reduced, the enhancement of Electron mobility due to Electron Confinement more than compensates for any suppression of mobility due to increased strain. Furthermore, we determine the extent to which scattering of impurities in the ZnO substrate limits the Electron mobility in diffuse ZnMgO–ZnO interfaces.

  • Electron Confinement at diffuse ZnMgO/ZnO interfaces
    APL Materials, 2017
    Co-Authors: Maddison L. Coke, Oscar W. Kennedy, James T. Sagar, Paul A. Warburton
    Abstract:

    Abrupt interfaces between ZnMgO and ZnO are strained due to lattice mismatch. This strain is relaxed if there is a gradual incorporation of Mg during growth, resulting in a diffuse interface. This strain relaxation is however accompanied by reduced Confinement and enhanced Mg-ion scattering of the confined Electrons at the interface. Here we experimentally study the Electronic transport properties of the diffuse heteroepitaxial interface between single-crystal ZnO and ZnMgO films grown by molecular-beam epitaxy. The spatial extent of the interface region is controlled during growth by varying the zinc flux. We show that, as the spatial extent of the graded interface is reduced, the enhancement of Electron mobility due to Electron Confinement more than compensates for any suppression of mobility due to increased strain. Furthermore, we determine the extent to which scattering of impurities in the ZnO substrate limits the Electron mobility in diffuse ZnMgO–ZnO interfaces.

S. M. Oak - One of the best experts on this subject based on the ideXlab platform.

  • observation of Electron Confinement in inp gaas type ii ultrathin quantum wells
    Applied Physics Letters, 2010
    Co-Authors: S. D. Singh, V.k. Dixit, S. Porwal, Ravi Kumar, Aneesh Srivastava, Tapas Ganguli, T. K. Sharma, S. M. Oak
    Abstract:

    The issue of type-II band alignment for InP/GaAs heterostructure is addressed by means of simple layer architecture of ultrathin quantum wells (QWs). From specific signatures of the radiative recombination in type-II QWs especially the cube root dependence of blueshift in the lowest excitonic transition energy on excitation power in photoluminescence measurements indicates that the observed luminescence is originating from spatially separated Electrons and holes. Such a blueshift is seen to increase with the QW thickness again confirming a type-II band alignment. A direct evidence of Electron Confinement in the conduction band of InP is provided by the capacitance voltage measurements.

  • Observation of Electron Confinement in InP/GaAs type-II ultrathin quantum wells
    Applied Physics Letters, 2010
    Co-Authors: S. D. Singh, V.k. Dixit, S. Porwal, Ravi Kumar, Aneesh Srivastava, Tapas Ganguli, T. K. Sharma, S. M. Oak
    Abstract:

    The issue of type-II band alignment for InP/GaAs heterostructure is addressed by means of simple layer architecture of ultrathin quantum wells (QWs). From specific signatures of the radiative recombination in type-II QWs especially the cube root dependence of blueshift in the lowest excitonic transition energy on excitation power in photoluminescence measurements indicates that the observed luminescence is originating from spatially separated Electrons and holes. Such a blueshift is seen to increase with the QW thickness again confirming a type-II band alignment. A direct evidence of Electron Confinement in the conduction band of InP is provided by the capacitance voltage measurements.

Maddison L. Coke - One of the best experts on this subject based on the ideXlab platform.

  • Electron Confinement at diffuse znmgo zno interfaces
    APL Materials, 2017
    Co-Authors: Maddison L. Coke, Oscar W. Kennedy, James T. Sagar, Paul A. Warburton
    Abstract:

    Abrupt interfaces between ZnMgO and ZnO are strained due to lattice mismatch. This strain is relaxed if there is a gradual incorporation of Mg during growth, resulting in a diffuse interface. This strain relaxation is however accompanied by reduced Confinement and enhanced Mg-ion scattering of the confined Electrons at the interface. Here we experimentally study the Electronic transport properties of the diffuse heteroepitaxial interface between single-crystal ZnO and ZnMgO films grown by molecular-beam epitaxy. The spatial extent of the interface region is controlled during growth by varying the zinc flux. We show that, as the spatial extent of the graded interface is reduced, the enhancement of Electron mobility due to Electron Confinement more than compensates for any suppression of mobility due to increased strain. Furthermore, we determine the extent to which scattering of impurities in the ZnO substrate limits the Electron mobility in diffuse ZnMgO–ZnO interfaces.

  • Electron Confinement at diffuse ZnMgO/ZnO interfaces
    APL Materials, 2017
    Co-Authors: Maddison L. Coke, Oscar W. Kennedy, James T. Sagar, Paul A. Warburton
    Abstract:

    Abrupt interfaces between ZnMgO and ZnO are strained due to lattice mismatch. This strain is relaxed if there is a gradual incorporation of Mg during growth, resulting in a diffuse interface. This strain relaxation is however accompanied by reduced Confinement and enhanced Mg-ion scattering of the confined Electrons at the interface. Here we experimentally study the Electronic transport properties of the diffuse heteroepitaxial interface between single-crystal ZnO and ZnMgO films grown by molecular-beam epitaxy. The spatial extent of the interface region is controlled during growth by varying the zinc flux. We show that, as the spatial extent of the graded interface is reduced, the enhancement of Electron mobility due to Electron Confinement more than compensates for any suppression of mobility due to increased strain. Furthermore, we determine the extent to which scattering of impurities in the ZnO substrate limits the Electron mobility in diffuse ZnMgO–ZnO interfaces.

S. D. Singh - One of the best experts on this subject based on the ideXlab platform.

  • observation of Electron Confinement in inp gaas type ii ultrathin quantum wells
    Applied Physics Letters, 2010
    Co-Authors: S. D. Singh, V.k. Dixit, S. Porwal, Ravi Kumar, Aneesh Srivastava, Tapas Ganguli, T. K. Sharma, S. M. Oak
    Abstract:

    The issue of type-II band alignment for InP/GaAs heterostructure is addressed by means of simple layer architecture of ultrathin quantum wells (QWs). From specific signatures of the radiative recombination in type-II QWs especially the cube root dependence of blueshift in the lowest excitonic transition energy on excitation power in photoluminescence measurements indicates that the observed luminescence is originating from spatially separated Electrons and holes. Such a blueshift is seen to increase with the QW thickness again confirming a type-II band alignment. A direct evidence of Electron Confinement in the conduction band of InP is provided by the capacitance voltage measurements.

  • Observation of Electron Confinement in InP/GaAs type-II ultrathin quantum wells
    Applied Physics Letters, 2010
    Co-Authors: S. D. Singh, V.k. Dixit, S. Porwal, Ravi Kumar, Aneesh Srivastava, Tapas Ganguli, T. K. Sharma, S. M. Oak
    Abstract:

    The issue of type-II band alignment for InP/GaAs heterostructure is addressed by means of simple layer architecture of ultrathin quantum wells (QWs). From specific signatures of the radiative recombination in type-II QWs especially the cube root dependence of blueshift in the lowest excitonic transition energy on excitation power in photoluminescence measurements indicates that the observed luminescence is originating from spatially separated Electrons and holes. Such a blueshift is seen to increase with the QW thickness again confirming a type-II band alignment. A direct evidence of Electron Confinement in the conduction band of InP is provided by the capacitance voltage measurements.

Oscar W. Kennedy - One of the best experts on this subject based on the ideXlab platform.

  • Electron Confinement at diffuse znmgo zno interfaces
    APL Materials, 2017
    Co-Authors: Maddison L. Coke, Oscar W. Kennedy, James T. Sagar, Paul A. Warburton
    Abstract:

    Abrupt interfaces between ZnMgO and ZnO are strained due to lattice mismatch. This strain is relaxed if there is a gradual incorporation of Mg during growth, resulting in a diffuse interface. This strain relaxation is however accompanied by reduced Confinement and enhanced Mg-ion scattering of the confined Electrons at the interface. Here we experimentally study the Electronic transport properties of the diffuse heteroepitaxial interface between single-crystal ZnO and ZnMgO films grown by molecular-beam epitaxy. The spatial extent of the interface region is controlled during growth by varying the zinc flux. We show that, as the spatial extent of the graded interface is reduced, the enhancement of Electron mobility due to Electron Confinement more than compensates for any suppression of mobility due to increased strain. Furthermore, we determine the extent to which scattering of impurities in the ZnO substrate limits the Electron mobility in diffuse ZnMgO–ZnO interfaces.

  • Electron Confinement at diffuse ZnMgO/ZnO interfaces
    APL Materials, 2017
    Co-Authors: Maddison L. Coke, Oscar W. Kennedy, James T. Sagar, Paul A. Warburton
    Abstract:

    Abrupt interfaces between ZnMgO and ZnO are strained due to lattice mismatch. This strain is relaxed if there is a gradual incorporation of Mg during growth, resulting in a diffuse interface. This strain relaxation is however accompanied by reduced Confinement and enhanced Mg-ion scattering of the confined Electrons at the interface. Here we experimentally study the Electronic transport properties of the diffuse heteroepitaxial interface between single-crystal ZnO and ZnMgO films grown by molecular-beam epitaxy. The spatial extent of the interface region is controlled during growth by varying the zinc flux. We show that, as the spatial extent of the graded interface is reduced, the enhancement of Electron mobility due to Electron Confinement more than compensates for any suppression of mobility due to increased strain. Furthermore, we determine the extent to which scattering of impurities in the ZnO substrate limits the Electron mobility in diffuse ZnMgO–ZnO interfaces.