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Michael Hetterich - One of the best experts on this subject based on the ideXlab platform.
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Conduction-band Electron Effective Mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry
Applied Physics Letters, 2006Co-Authors: Tino Hofmann, K. C. Agarwal, B. Daniel, Claus F. Klingshirn, Michael Hetterich, Ulrich Schade, Craig M. Herzinger, Mathias SchubertAbstract:We determine the Electron Effective Mass parameter m*=0.086±0.004m0 of thin-film n-type low-chlorine-doped Zn0.87Mn0.13Se with free-charge-carrier concentration N=4.5×1017cm−3 and optical mobility μ=300±20cm2∕(Vs) using magneto-optic generalized ellipsometry in the terahertz and far-infrared spectral domain for wave numbers from ω=30–650cm−1. The room-temperature measurements were carried out with magnetic fields up to 3 T. We employ synchrotron and black-body radiation sources for the terahertz and far-infrared spectral regions, respectively. Comparison with previous experimental results from samples with considerably higher free Electron density and theoretical calculations suggest that our value is sufficiently unaffected by band nonparabolicity and provides a good approximation of the Γ-point conduction band Mass in Zn0.87Mn0.13Se. We further provide optical phonon mode parameters and the high-frequency dielectric constant.
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Carrier concentration, mobility, and Electron Effective Mass in chlorine-doped n-type Zn1−xMnxSe epilayers grown by molecular-beam epitaxy
Applied Physics Letters, 2005Co-Authors: B. Daniel, K. C. Agarwal, Claus F. Klingshirn, J. Lupaca-schomber, Michael HetterichAbstract:We investigate n-type chlorine-doped ZnMnSe epilayers with various Mn contents and doping concentrations. In ZnSe, the maximum dopability was 6×1019cm−3, which reduces to 1.1×1019cm−3 at 13% Mn content. At a constant ZnCl2 doping source temperature, the doping concentration decreases continuously with increasing Mn content in the sample. From our optical measurements, we found a lower Electron Effective Mass in Zn0.87Mn0.13Se samples compared to ZnSe. Additionally, the incorporation of Mn increases the resistivity and decreases the mobility of the free charge carriers in the samples.
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carrier concentration mobility and Electron Effective Mass in chlorine doped n type zn1 xmnxse epilayers grown by molecular beam epitaxy
Applied Physics Letters, 2005Co-Authors: B. Daniel, K. C. Agarwal, Claus F. Klingshirn, J Lupacaschomber, Michael HetterichAbstract:We investigate n-type chlorine-doped ZnMnSe epilayers with various Mn contents and doping concentrations. In ZnSe, the maximum dopability was 6×1019cm−3, which reduces to 1.1×1019cm−3 at 13% Mn content. At a constant ZnCl2 doping source temperature, the doping concentration decreases continuously with increasing Mn content in the sample. From our optical measurements, we found a lower Electron Effective Mass in Zn0.87Mn0.13Se samples compared to ZnSe. Additionally, the incorporation of Mn increases the resistivity and decreases the mobility of the free charge carriers in the samples.
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Carrier-density-dependent Electron Effective Mass in Zn1−xMnxSe for 0⩽x⩽0.13
Applied Physics Letters, 2005Co-Authors: K. C. Agarwal, B. Daniel, M. Grün, P. Feinäugle, Claus F. Klingshirn, Michael HetterichAbstract:We used room-temperature infrared reflectivity measurements to investigate n-type chlorine-doped Zn1−xMnxSe epilayers (0⩽x⩽0.13). By making Drude-Lorentz-type multioscillator fits to our data, we extracted the optical Electron Effective Mass (m*) in doped Zn(Mn)Se:Cl samples with different Mn content and doping concentrations. Our results indicate that m* in Zn1−xMnxSe is lower than that for ZnSe. In n-type chlorine-doped ZnSe samples with different doping concentrations, m* varied from 0.133m0 to 0.152m0, while in Zn0.87Mn0.13Se:Cl samples, we found a variation from 0.095m0 to 0.115m0 within ±9% experimental accuracy. From theoretical calculations, we estimate that the band-edge Electron Masses in ZnSe:Cl and Zn0.87Mn0.13Se:Cl should be about 0.132m0 and 0.093m0, respectively.
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carrier density dependent Electron Effective Mass in zn1 xmnxse for 0 x 0 13
Applied Physics Letters, 2005Co-Authors: K. C. Agarwal, B. Daniel, M. Grün, P. Feinäugle, Claus F. Klingshirn, Michael HetterichAbstract:We used room-temperature infrared reflectivity measurements to investigate n-type chlorine-doped Zn1−xMnxSe epilayers (0⩽x⩽0.13). By making Drude-Lorentz-type multioscillator fits to our data, we extracted the optical Electron Effective Mass (m*) in doped Zn(Mn)Se:Cl samples with different Mn content and doping concentrations. Our results indicate that m* in Zn1−xMnxSe is lower than that for ZnSe. In n-type chlorine-doped ZnSe samples with different doping concentrations, m* varied from 0.133m0 to 0.152m0, while in Zn0.87Mn0.13Se:Cl samples, we found a variation from 0.095m0 to 0.115m0 within ±9% experimental accuracy. From theoretical calculations, we estimate that the band-edge Electron Masses in ZnSe:Cl and Zn0.87Mn0.13Se:Cl should be about 0.132m0 and 0.093m0, respectively.
K. C. Agarwal - One of the best experts on this subject based on the ideXlab platform.
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Conduction-band Electron Effective Mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry
Applied Physics Letters, 2006Co-Authors: Tino Hofmann, K. C. Agarwal, B. Daniel, Claus F. Klingshirn, Michael Hetterich, Ulrich Schade, Craig M. Herzinger, Mathias SchubertAbstract:We determine the Electron Effective Mass parameter m*=0.086±0.004m0 of thin-film n-type low-chlorine-doped Zn0.87Mn0.13Se with free-charge-carrier concentration N=4.5×1017cm−3 and optical mobility μ=300±20cm2∕(Vs) using magneto-optic generalized ellipsometry in the terahertz and far-infrared spectral domain for wave numbers from ω=30–650cm−1. The room-temperature measurements were carried out with magnetic fields up to 3 T. We employ synchrotron and black-body radiation sources for the terahertz and far-infrared spectral regions, respectively. Comparison with previous experimental results from samples with considerably higher free Electron density and theoretical calculations suggest that our value is sufficiently unaffected by band nonparabolicity and provides a good approximation of the Γ-point conduction band Mass in Zn0.87Mn0.13Se. We further provide optical phonon mode parameters and the high-frequency dielectric constant.
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Carrier concentration, mobility, and Electron Effective Mass in chlorine-doped n-type Zn1−xMnxSe epilayers grown by molecular-beam epitaxy
Applied Physics Letters, 2005Co-Authors: B. Daniel, K. C. Agarwal, Claus F. Klingshirn, J. Lupaca-schomber, Michael HetterichAbstract:We investigate n-type chlorine-doped ZnMnSe epilayers with various Mn contents and doping concentrations. In ZnSe, the maximum dopability was 6×1019cm−3, which reduces to 1.1×1019cm−3 at 13% Mn content. At a constant ZnCl2 doping source temperature, the doping concentration decreases continuously with increasing Mn content in the sample. From our optical measurements, we found a lower Electron Effective Mass in Zn0.87Mn0.13Se samples compared to ZnSe. Additionally, the incorporation of Mn increases the resistivity and decreases the mobility of the free charge carriers in the samples.
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carrier concentration mobility and Electron Effective Mass in chlorine doped n type zn1 xmnxse epilayers grown by molecular beam epitaxy
Applied Physics Letters, 2005Co-Authors: B. Daniel, K. C. Agarwal, Claus F. Klingshirn, J Lupacaschomber, Michael HetterichAbstract:We investigate n-type chlorine-doped ZnMnSe epilayers with various Mn contents and doping concentrations. In ZnSe, the maximum dopability was 6×1019cm−3, which reduces to 1.1×1019cm−3 at 13% Mn content. At a constant ZnCl2 doping source temperature, the doping concentration decreases continuously with increasing Mn content in the sample. From our optical measurements, we found a lower Electron Effective Mass in Zn0.87Mn0.13Se samples compared to ZnSe. Additionally, the incorporation of Mn increases the resistivity and decreases the mobility of the free charge carriers in the samples.
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Carrier-density-dependent Electron Effective Mass in Zn1−xMnxSe for 0⩽x⩽0.13
Applied Physics Letters, 2005Co-Authors: K. C. Agarwal, B. Daniel, M. Grün, P. Feinäugle, Claus F. Klingshirn, Michael HetterichAbstract:We used room-temperature infrared reflectivity measurements to investigate n-type chlorine-doped Zn1−xMnxSe epilayers (0⩽x⩽0.13). By making Drude-Lorentz-type multioscillator fits to our data, we extracted the optical Electron Effective Mass (m*) in doped Zn(Mn)Se:Cl samples with different Mn content and doping concentrations. Our results indicate that m* in Zn1−xMnxSe is lower than that for ZnSe. In n-type chlorine-doped ZnSe samples with different doping concentrations, m* varied from 0.133m0 to 0.152m0, while in Zn0.87Mn0.13Se:Cl samples, we found a variation from 0.095m0 to 0.115m0 within ±9% experimental accuracy. From theoretical calculations, we estimate that the band-edge Electron Masses in ZnSe:Cl and Zn0.87Mn0.13Se:Cl should be about 0.132m0 and 0.093m0, respectively.
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carrier density dependent Electron Effective Mass in zn1 xmnxse for 0 x 0 13
Applied Physics Letters, 2005Co-Authors: K. C. Agarwal, B. Daniel, M. Grün, P. Feinäugle, Claus F. Klingshirn, Michael HetterichAbstract:We used room-temperature infrared reflectivity measurements to investigate n-type chlorine-doped Zn1−xMnxSe epilayers (0⩽x⩽0.13). By making Drude-Lorentz-type multioscillator fits to our data, we extracted the optical Electron Effective Mass (m*) in doped Zn(Mn)Se:Cl samples with different Mn content and doping concentrations. Our results indicate that m* in Zn1−xMnxSe is lower than that for ZnSe. In n-type chlorine-doped ZnSe samples with different doping concentrations, m* varied from 0.133m0 to 0.152m0, while in Zn0.87Mn0.13Se:Cl samples, we found a variation from 0.095m0 to 0.115m0 within ±9% experimental accuracy. From theoretical calculations, we estimate that the band-edge Electron Masses in ZnSe:Cl and Zn0.87Mn0.13Se:Cl should be about 0.132m0 and 0.093m0, respectively.
B. Daniel - One of the best experts on this subject based on the ideXlab platform.
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Conduction-band Electron Effective Mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry
Applied Physics Letters, 2006Co-Authors: Tino Hofmann, K. C. Agarwal, B. Daniel, Claus F. Klingshirn, Michael Hetterich, Ulrich Schade, Craig M. Herzinger, Mathias SchubertAbstract:We determine the Electron Effective Mass parameter m*=0.086±0.004m0 of thin-film n-type low-chlorine-doped Zn0.87Mn0.13Se with free-charge-carrier concentration N=4.5×1017cm−3 and optical mobility μ=300±20cm2∕(Vs) using magneto-optic generalized ellipsometry in the terahertz and far-infrared spectral domain for wave numbers from ω=30–650cm−1. The room-temperature measurements were carried out with magnetic fields up to 3 T. We employ synchrotron and black-body radiation sources for the terahertz and far-infrared spectral regions, respectively. Comparison with previous experimental results from samples with considerably higher free Electron density and theoretical calculations suggest that our value is sufficiently unaffected by band nonparabolicity and provides a good approximation of the Γ-point conduction band Mass in Zn0.87Mn0.13Se. We further provide optical phonon mode parameters and the high-frequency dielectric constant.
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Carrier concentration, mobility, and Electron Effective Mass in chlorine-doped n-type Zn1−xMnxSe epilayers grown by molecular-beam epitaxy
Applied Physics Letters, 2005Co-Authors: B. Daniel, K. C. Agarwal, Claus F. Klingshirn, J. Lupaca-schomber, Michael HetterichAbstract:We investigate n-type chlorine-doped ZnMnSe epilayers with various Mn contents and doping concentrations. In ZnSe, the maximum dopability was 6×1019cm−3, which reduces to 1.1×1019cm−3 at 13% Mn content. At a constant ZnCl2 doping source temperature, the doping concentration decreases continuously with increasing Mn content in the sample. From our optical measurements, we found a lower Electron Effective Mass in Zn0.87Mn0.13Se samples compared to ZnSe. Additionally, the incorporation of Mn increases the resistivity and decreases the mobility of the free charge carriers in the samples.
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carrier concentration mobility and Electron Effective Mass in chlorine doped n type zn1 xmnxse epilayers grown by molecular beam epitaxy
Applied Physics Letters, 2005Co-Authors: B. Daniel, K. C. Agarwal, Claus F. Klingshirn, J Lupacaschomber, Michael HetterichAbstract:We investigate n-type chlorine-doped ZnMnSe epilayers with various Mn contents and doping concentrations. In ZnSe, the maximum dopability was 6×1019cm−3, which reduces to 1.1×1019cm−3 at 13% Mn content. At a constant ZnCl2 doping source temperature, the doping concentration decreases continuously with increasing Mn content in the sample. From our optical measurements, we found a lower Electron Effective Mass in Zn0.87Mn0.13Se samples compared to ZnSe. Additionally, the incorporation of Mn increases the resistivity and decreases the mobility of the free charge carriers in the samples.
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Carrier-density-dependent Electron Effective Mass in Zn1−xMnxSe for 0⩽x⩽0.13
Applied Physics Letters, 2005Co-Authors: K. C. Agarwal, B. Daniel, M. Grün, P. Feinäugle, Claus F. Klingshirn, Michael HetterichAbstract:We used room-temperature infrared reflectivity measurements to investigate n-type chlorine-doped Zn1−xMnxSe epilayers (0⩽x⩽0.13). By making Drude-Lorentz-type multioscillator fits to our data, we extracted the optical Electron Effective Mass (m*) in doped Zn(Mn)Se:Cl samples with different Mn content and doping concentrations. Our results indicate that m* in Zn1−xMnxSe is lower than that for ZnSe. In n-type chlorine-doped ZnSe samples with different doping concentrations, m* varied from 0.133m0 to 0.152m0, while in Zn0.87Mn0.13Se:Cl samples, we found a variation from 0.095m0 to 0.115m0 within ±9% experimental accuracy. From theoretical calculations, we estimate that the band-edge Electron Masses in ZnSe:Cl and Zn0.87Mn0.13Se:Cl should be about 0.132m0 and 0.093m0, respectively.
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carrier density dependent Electron Effective Mass in zn1 xmnxse for 0 x 0 13
Applied Physics Letters, 2005Co-Authors: K. C. Agarwal, B. Daniel, M. Grün, P. Feinäugle, Claus F. Klingshirn, Michael HetterichAbstract:We used room-temperature infrared reflectivity measurements to investigate n-type chlorine-doped Zn1−xMnxSe epilayers (0⩽x⩽0.13). By making Drude-Lorentz-type multioscillator fits to our data, we extracted the optical Electron Effective Mass (m*) in doped Zn(Mn)Se:Cl samples with different Mn content and doping concentrations. Our results indicate that m* in Zn1−xMnxSe is lower than that for ZnSe. In n-type chlorine-doped ZnSe samples with different doping concentrations, m* varied from 0.133m0 to 0.152m0, while in Zn0.87Mn0.13Se:Cl samples, we found a variation from 0.095m0 to 0.115m0 within ±9% experimental accuracy. From theoretical calculations, we estimate that the band-edge Electron Masses in ZnSe:Cl and Zn0.87Mn0.13Se:Cl should be about 0.132m0 and 0.093m0, respectively.
Claus F. Klingshirn - One of the best experts on this subject based on the ideXlab platform.
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Conduction-band Electron Effective Mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry
Applied Physics Letters, 2006Co-Authors: Tino Hofmann, K. C. Agarwal, B. Daniel, Claus F. Klingshirn, Michael Hetterich, Ulrich Schade, Craig M. Herzinger, Mathias SchubertAbstract:We determine the Electron Effective Mass parameter m*=0.086±0.004m0 of thin-film n-type low-chlorine-doped Zn0.87Mn0.13Se with free-charge-carrier concentration N=4.5×1017cm−3 and optical mobility μ=300±20cm2∕(Vs) using magneto-optic generalized ellipsometry in the terahertz and far-infrared spectral domain for wave numbers from ω=30–650cm−1. The room-temperature measurements were carried out with magnetic fields up to 3 T. We employ synchrotron and black-body radiation sources for the terahertz and far-infrared spectral regions, respectively. Comparison with previous experimental results from samples with considerably higher free Electron density and theoretical calculations suggest that our value is sufficiently unaffected by band nonparabolicity and provides a good approximation of the Γ-point conduction band Mass in Zn0.87Mn0.13Se. We further provide optical phonon mode parameters and the high-frequency dielectric constant.
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Carrier concentration, mobility, and Electron Effective Mass in chlorine-doped n-type Zn1−xMnxSe epilayers grown by molecular-beam epitaxy
Applied Physics Letters, 2005Co-Authors: B. Daniel, K. C. Agarwal, Claus F. Klingshirn, J. Lupaca-schomber, Michael HetterichAbstract:We investigate n-type chlorine-doped ZnMnSe epilayers with various Mn contents and doping concentrations. In ZnSe, the maximum dopability was 6×1019cm−3, which reduces to 1.1×1019cm−3 at 13% Mn content. At a constant ZnCl2 doping source temperature, the doping concentration decreases continuously with increasing Mn content in the sample. From our optical measurements, we found a lower Electron Effective Mass in Zn0.87Mn0.13Se samples compared to ZnSe. Additionally, the incorporation of Mn increases the resistivity and decreases the mobility of the free charge carriers in the samples.
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carrier concentration mobility and Electron Effective Mass in chlorine doped n type zn1 xmnxse epilayers grown by molecular beam epitaxy
Applied Physics Letters, 2005Co-Authors: B. Daniel, K. C. Agarwal, Claus F. Klingshirn, J Lupacaschomber, Michael HetterichAbstract:We investigate n-type chlorine-doped ZnMnSe epilayers with various Mn contents and doping concentrations. In ZnSe, the maximum dopability was 6×1019cm−3, which reduces to 1.1×1019cm−3 at 13% Mn content. At a constant ZnCl2 doping source temperature, the doping concentration decreases continuously with increasing Mn content in the sample. From our optical measurements, we found a lower Electron Effective Mass in Zn0.87Mn0.13Se samples compared to ZnSe. Additionally, the incorporation of Mn increases the resistivity and decreases the mobility of the free charge carriers in the samples.
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Carrier-density-dependent Electron Effective Mass in Zn1−xMnxSe for 0⩽x⩽0.13
Applied Physics Letters, 2005Co-Authors: K. C. Agarwal, B. Daniel, M. Grün, P. Feinäugle, Claus F. Klingshirn, Michael HetterichAbstract:We used room-temperature infrared reflectivity measurements to investigate n-type chlorine-doped Zn1−xMnxSe epilayers (0⩽x⩽0.13). By making Drude-Lorentz-type multioscillator fits to our data, we extracted the optical Electron Effective Mass (m*) in doped Zn(Mn)Se:Cl samples with different Mn content and doping concentrations. Our results indicate that m* in Zn1−xMnxSe is lower than that for ZnSe. In n-type chlorine-doped ZnSe samples with different doping concentrations, m* varied from 0.133m0 to 0.152m0, while in Zn0.87Mn0.13Se:Cl samples, we found a variation from 0.095m0 to 0.115m0 within ±9% experimental accuracy. From theoretical calculations, we estimate that the band-edge Electron Masses in ZnSe:Cl and Zn0.87Mn0.13Se:Cl should be about 0.132m0 and 0.093m0, respectively.
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carrier density dependent Electron Effective Mass in zn1 xmnxse for 0 x 0 13
Applied Physics Letters, 2005Co-Authors: K. C. Agarwal, B. Daniel, M. Grün, P. Feinäugle, Claus F. Klingshirn, Michael HetterichAbstract:We used room-temperature infrared reflectivity measurements to investigate n-type chlorine-doped Zn1−xMnxSe epilayers (0⩽x⩽0.13). By making Drude-Lorentz-type multioscillator fits to our data, we extracted the optical Electron Effective Mass (m*) in doped Zn(Mn)Se:Cl samples with different Mn content and doping concentrations. Our results indicate that m* in Zn1−xMnxSe is lower than that for ZnSe. In n-type chlorine-doped ZnSe samples with different doping concentrations, m* varied from 0.133m0 to 0.152m0, while in Zn0.87Mn0.13Se:Cl samples, we found a variation from 0.095m0 to 0.115m0 within ±9% experimental accuracy. From theoretical calculations, we estimate that the band-edge Electron Masses in ZnSe:Cl and Zn0.87Mn0.13Se:Cl should be about 0.132m0 and 0.093m0, respectively.
M. Grün - One of the best experts on this subject based on the ideXlab platform.
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Carrier-density-dependent Electron Effective Mass in Zn1−xMnxSe for 0⩽x⩽0.13
Applied Physics Letters, 2005Co-Authors: K. C. Agarwal, B. Daniel, M. Grün, P. Feinäugle, Claus F. Klingshirn, Michael HetterichAbstract:We used room-temperature infrared reflectivity measurements to investigate n-type chlorine-doped Zn1−xMnxSe epilayers (0⩽x⩽0.13). By making Drude-Lorentz-type multioscillator fits to our data, we extracted the optical Electron Effective Mass (m*) in doped Zn(Mn)Se:Cl samples with different Mn content and doping concentrations. Our results indicate that m* in Zn1−xMnxSe is lower than that for ZnSe. In n-type chlorine-doped ZnSe samples with different doping concentrations, m* varied from 0.133m0 to 0.152m0, while in Zn0.87Mn0.13Se:Cl samples, we found a variation from 0.095m0 to 0.115m0 within ±9% experimental accuracy. From theoretical calculations, we estimate that the band-edge Electron Masses in ZnSe:Cl and Zn0.87Mn0.13Se:Cl should be about 0.132m0 and 0.093m0, respectively.
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carrier density dependent Electron Effective Mass in zn1 xmnxse for 0 x 0 13
Applied Physics Letters, 2005Co-Authors: K. C. Agarwal, B. Daniel, M. Grün, P. Feinäugle, Claus F. Klingshirn, Michael HetterichAbstract:We used room-temperature infrared reflectivity measurements to investigate n-type chlorine-doped Zn1−xMnxSe epilayers (0⩽x⩽0.13). By making Drude-Lorentz-type multioscillator fits to our data, we extracted the optical Electron Effective Mass (m*) in doped Zn(Mn)Se:Cl samples with different Mn content and doping concentrations. Our results indicate that m* in Zn1−xMnxSe is lower than that for ZnSe. In n-type chlorine-doped ZnSe samples with different doping concentrations, m* varied from 0.133m0 to 0.152m0, while in Zn0.87Mn0.13Se:Cl samples, we found a variation from 0.095m0 to 0.115m0 within ±9% experimental accuracy. From theoretical calculations, we estimate that the band-edge Electron Masses in ZnSe:Cl and Zn0.87Mn0.13Se:Cl should be about 0.132m0 and 0.093m0, respectively.