The Experts below are selected from a list of 108 Experts worldwide ranked by ideXlab platform

Jean-paul Kleider - One of the best experts on this subject based on the ideXlab platform.

  • Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire arrays: focus on the electrical transport in between the nanowires
    Nanotechnology, 2018
    Co-Authors: Alexandra Levtchenko, Sylvain Le Gall, Raphaël Lachaume, Jérôme Michallon, Stéphane Collin, José Alvarez, Zakaria Djebbour, Jean-paul Kleider
    Abstract:

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell's performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (Vbi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell's performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the Vbi at both interfaces due to strong Electrostatic Screening effect. Depositing such a buffer layer playing the role of an Electrostatic Screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

  • Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire array: focus on the electrical transport in between the nanowires.
    Nanotechnology, 2018
    Co-Authors: Alexandra Levtchenko, Sylvain Le Gall, Raphaël Lachaume, Jérôme Michallon, Stéphane Collin, José Alvarez, Zakaria Djebbour, Jean-paul Kleider
    Abstract:

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell's performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (V bi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell's performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the V bi at both interfaces due to strong Electrostatic Screening effect. Depositing such a buffer layer playing the role of an Electrostatic Screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

Alexandra Levtchenko - One of the best experts on this subject based on the ideXlab platform.

  • Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire arrays: focus on the electrical transport in between the nanowires
    Nanotechnology, 2018
    Co-Authors: Alexandra Levtchenko, Sylvain Le Gall, Raphaël Lachaume, Jérôme Michallon, Stéphane Collin, José Alvarez, Zakaria Djebbour, Jean-paul Kleider
    Abstract:

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell's performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (Vbi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell's performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the Vbi at both interfaces due to strong Electrostatic Screening effect. Depositing such a buffer layer playing the role of an Electrostatic Screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

  • Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire array: focus on the electrical transport in between the nanowires.
    Nanotechnology, 2018
    Co-Authors: Alexandra Levtchenko, Sylvain Le Gall, Raphaël Lachaume, Jérôme Michallon, Stéphane Collin, José Alvarez, Zakaria Djebbour, Jean-paul Kleider
    Abstract:

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell's performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (V bi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell's performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the V bi at both interfaces due to strong Electrostatic Screening effect. Depositing such a buffer layer playing the role of an Electrostatic Screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

Stéphane Collin - One of the best experts on this subject based on the ideXlab platform.

  • Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire arrays: focus on the electrical transport in between the nanowires
    Nanotechnology, 2018
    Co-Authors: Alexandra Levtchenko, Sylvain Le Gall, Raphaël Lachaume, Jérôme Michallon, Stéphane Collin, José Alvarez, Zakaria Djebbour, Jean-paul Kleider
    Abstract:

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell's performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (Vbi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell's performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the Vbi at both interfaces due to strong Electrostatic Screening effect. Depositing such a buffer layer playing the role of an Electrostatic Screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

  • Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire array: focus on the electrical transport in between the nanowires.
    Nanotechnology, 2018
    Co-Authors: Alexandra Levtchenko, Sylvain Le Gall, Raphaël Lachaume, Jérôme Michallon, Stéphane Collin, José Alvarez, Zakaria Djebbour, Jean-paul Kleider
    Abstract:

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell's performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (V bi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell's performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the V bi at both interfaces due to strong Electrostatic Screening effect. Depositing such a buffer layer playing the role of an Electrostatic Screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

Sylvain Le Gall - One of the best experts on this subject based on the ideXlab platform.

  • Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire arrays: focus on the electrical transport in between the nanowires
    Nanotechnology, 2018
    Co-Authors: Alexandra Levtchenko, Sylvain Le Gall, Raphaël Lachaume, Jérôme Michallon, Stéphane Collin, José Alvarez, Zakaria Djebbour, Jean-paul Kleider
    Abstract:

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell's performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (Vbi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell's performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the Vbi at both interfaces due to strong Electrostatic Screening effect. Depositing such a buffer layer playing the role of an Electrostatic Screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

  • Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire array: focus on the electrical transport in between the nanowires.
    Nanotechnology, 2018
    Co-Authors: Alexandra Levtchenko, Sylvain Le Gall, Raphaël Lachaume, Jérôme Michallon, Stéphane Collin, José Alvarez, Zakaria Djebbour, Jean-paul Kleider
    Abstract:

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell's performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (V bi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell's performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the V bi at both interfaces due to strong Electrostatic Screening effect. Depositing such a buffer layer playing the role of an Electrostatic Screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

Raphaël Lachaume - One of the best experts on this subject based on the ideXlab platform.

  • Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire arrays: focus on the electrical transport in between the nanowires
    Nanotechnology, 2018
    Co-Authors: Alexandra Levtchenko, Sylvain Le Gall, Raphaël Lachaume, Jérôme Michallon, Stéphane Collin, José Alvarez, Zakaria Djebbour, Jean-paul Kleider
    Abstract:

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell's performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (Vbi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell's performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the Vbi at both interfaces due to strong Electrostatic Screening effect. Depositing such a buffer layer playing the role of an Electrostatic Screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

  • Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire array: focus on the electrical transport in between the nanowires.
    Nanotechnology, 2018
    Co-Authors: Alexandra Levtchenko, Sylvain Le Gall, Raphaël Lachaume, Jérôme Michallon, Stéphane Collin, José Alvarez, Zakaria Djebbour, Jean-paul Kleider
    Abstract:

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell's performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (V bi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell's performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the V bi at both interfaces due to strong Electrostatic Screening effect. Depositing such a buffer layer playing the role of an Electrostatic Screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.