The Experts below are selected from a list of 106380 Experts worldwide ranked by ideXlab platform
Alfred Forchel - One of the best experts on this subject based on the ideXlab platform.
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Emission Wavelength tuning of interband cascade lasers in the 3–4 μm spectral range
Applied Physics Letters, 2009Co-Authors: Adam Q. Bauer, Fabian Langer, M. Dallner, M. Kamp, Marcin Motyka, G. Sęk, Krzysztof Ryczko, J. Misiewicz, Sven Höfling, Alfred ForchelAbstract:GaSb-based type-II quantum well (QW) structures and interband cascade lasers (ICLs) are investigated with regards to the dependence of Emission Wavelength on active QW thicknesses. Experimentally derived photoluminescence data and electrically driven ICL device data accompanied by theoretical calculations yield an average tuning rate of 0.55 μm per monolayer InAs in the range between 2.97 and 4.16 μm. Together with a temperature dependent ICL tuning behavior of 1.88 nm/K, the presented results provide the means for reliable and accurate Emission Wavelength control of ICLs in the 3–4 μm Wavelength span which is of major importance for gas sensing applications.
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Emission Wavelength tuning of interband cascade lasers in the 3 4 μm spectral range
Applied Physics Letters, 2009Co-Authors: A Bauer, Fabian Langer, M. Dallner, M. Kamp, Marcin Motyka, Krzysztof Ryczko, J. Misiewicz, Sven Höfling, G Sek, Alfred ForchelAbstract:GaSb-based type-II quantum well (QW) structures and interband cascade lasers (ICLs) are investigated with regards to the dependence of Emission Wavelength on active QW thicknesses. Experimentally derived photoluminescence data and electrically driven ICL device data accompanied by theoretical calculations yield an average tuning rate of 0.55 μm per monolayer InAs in the range between 2.97 and 4.16 μm. Together with a temperature dependent ICL tuning behavior of 1.88 nm/K, the presented results provide the means for reliable and accurate Emission Wavelength control of ICLs in the 3–4 μm Wavelength span which is of major importance for gas sensing applications.
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Emission Wavelength tuning in interband cascade laser devices in the 3–4 µm Wavelength range
2009 IEEE LEOS Annual Meeting Conference Proceedings, 2009Co-Authors: Adam Q. Bauer, Fabian Langer, Marcin Motyka, G. Sęk, Krzysztof Ryczko, Sven Höfling, Alfred Forchel, J. MisiewiczAbstract:GaSb-based type-II quantum well structures and interband cascade lasers with varying thicknesses of the optically active quantum wells are investigated. Obtained results provide the means for reliable and precise control of the resulting Emission Wavelength.
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Tailoring of morphology and Emission Wavelength of AlGaInAs quantum dots
Nanotechnology, 2008Co-Authors: T. W. Schlereth, Sven Höfling, Christian Schneider, Alfred ForchelAbstract:We present a study of the growth, morphology and optical properties of AlxGa1−x−yInyAs quantum dots (QDs) for a wide range of Al and In concentrations (0≤x≤0.34 and 0.43≤y≤0.60). Short Emission Wavelengths between 660 and 940 nm and QD surface densities up to 1.1 × 1011 cm−2 have been achieved. Our results show that by varying both the Al concentration and the In concentration an independent adjustment of strain and QD band gap is possible. This additional degree of freedom can be employed for tailoring AlGaInAs QDs with the desired Emission Wavelength, surface density and average size. AlGaInAs QDs thus offer new possibilities for future QD device design.
Jose Menendez - One of the best experts on this subject based on the ideXlab platform.
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direct gap photoluminescence with tunable Emission Wavelength in ge1 ysny alloys on silicon
Applied Physics Letters, 2010Co-Authors: Jay Mathews, Richard T. Beeler, John Tolle, Radek Roucka, John Kouvetakis, Jose MenendezAbstract:Direct-gap photoluminescence has been observed at room temperature in Ge1−ySny alloys grown on (001) Si substrates. The Emission Wavelength is tunable over a 90 meV (200 nm) range by increasing the Sn concentration from y=0 to y=0.03. A weaker feature at lower energy is assigned to the indirect gap transitions, and the separation between the direct and indirect Emission peaks is found to decrease as a function of y, as expected for these alloys. These results suggest that Ge1−ySny alloys represent an attractive alternative to Ge for the fabrication of laser devices on Si.
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Direct-gap photoluminescence with tunable Emission Wavelength in Ge1−ySny alloys on silicon
Applied Physics Letters, 2010Co-Authors: Jay Mathews, Richard T. Beeler, John Tolle, Radek Roucka, John Kouvetakis, Jose MenendezAbstract:Direct-gap photoluminescence has been observed at room temperature in Ge1−ySny alloys grown on (001) Si substrates. The Emission Wavelength is tunable over a 90 meV (200 nm) range by increasing the Sn concentration from y=0 to y=0.03. A weaker feature at lower energy is assigned to the indirect gap transitions, and the separation between the direct and indirect Emission peaks is found to decrease as a function of y, as expected for these alloys. These results suggest that Ge1−ySny alloys represent an attractive alternative to Ge for the fabrication of laser devices on Si.
Guqiao Ding - One of the best experts on this subject based on the ideXlab platform.
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green preparation of lattice phosphorus doped graphene quantum dots with tunable Emission Wavelength for bio imaging
Materials Letters, 2019Co-Authors: Gang Wang, Zihao Wang, Zhiduo Liu, Qinglei Guo, Da Chen, Siwei Yang, Guqiao Ding, Ziwen Wang, Yongqiang WangAbstract:Abstract Lattice phosphorus (P) doping has been demonstrated as an effective method for tuning the fluorescence of graphene quantum dots (GQDs). Due to the many possible oxidation states of P, lattice P-doped GQDs (P-GQDs) are still difficult to synthesize. Here, we report the green preparation of P-GQDs via solvothermal treatment of lecithin with high yield (71 wt%). The resulting P-GQDs show controllable Emission Wavelength (457–632 nm) and high quantum yield (0.54–0.73), and have demonstrated potential for applications in fluorescent bio-imaging.
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The Emission Wavelength dependent photoluminescence lifetime of the N-doped graphene quantum dots
Applied Physics Letters, 2015Co-Authors: Xingxia Deng, Jing Sun, Siwei Yang, Hao Shen, Wei Zhou, Guqiao Ding, Zhongyang WangAbstract:Aromatic nitrogen doped graphene quantum dots were investigated by steady-state and time-resolved photoluminescence (PL) techniques. The PL lifetime was found to be dependent on the Emission Wavelength and coincident with the PL spectrum, which is different from most semiconductor quantum dots and fluorescent dyes. This result shows the synergy and competition between the quantum confinement effect and edge functional groups, which may have the potential to guide the synthesis and expand the applications of graphene quantum dots.
Hilmi Volkan Demir - One of the best experts on this subject based on the ideXlab platform.
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on the origin of the redshift in the Emission Wavelength of ingan gan blue light emitting diodes grown with a higher temperature interlayer
Applied Physics Letters, 2012Co-Authors: Swee Tiam Tan, Zi-hui Zhang, Zabu Kyaw, Yilmaz Dikme, Xiao Wei Sun, Hilmi Volkan DemirAbstract:A redshift of the peak Emission Wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth temperature on the Emission Wavelength was probed and studied by optical, structural, and electrical properties. Numerical studies on the effect of indium composition and quantum confinement Stark effect were also carried out to verify the experimental data. The results suggest that the redshift of the peak Emission Wavelength is originated from the enhanced indium incorporation, which results from the reduced strain during the growth of quantum wells.
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On the origin of the redshift in the Emission Wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
Applied Physics Letters, 2012Co-Authors: Swee Tiam Tan, Zi-hui Zhang, Zabu Kyaw, Yilmaz Dikme, Xiao Wei Sun, Hilmi Volkan DemirAbstract:A redshift of the peak Emission Wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth temperature on the Emission Wavelength was probed and studied by optical, structural, and electrical properties. Numerical studies on the effect of indium composition and quantum confinement Stark effect were also carried out to verify the experimental data. The results suggest that the redshift of the peak Emission Wavelength is originated from the enhanced indium incorporation, which results from the reduced strain during the growth of quantum wells.
Jay Mathews - One of the best experts on this subject based on the ideXlab platform.
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direct gap photoluminescence with tunable Emission Wavelength in ge1 ysny alloys on silicon
Applied Physics Letters, 2010Co-Authors: Jay Mathews, Richard T. Beeler, John Tolle, Radek Roucka, John Kouvetakis, Jose MenendezAbstract:Direct-gap photoluminescence has been observed at room temperature in Ge1−ySny alloys grown on (001) Si substrates. The Emission Wavelength is tunable over a 90 meV (200 nm) range by increasing the Sn concentration from y=0 to y=0.03. A weaker feature at lower energy is assigned to the indirect gap transitions, and the separation between the direct and indirect Emission peaks is found to decrease as a function of y, as expected for these alloys. These results suggest that Ge1−ySny alloys represent an attractive alternative to Ge for the fabrication of laser devices on Si.
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Direct-gap photoluminescence with tunable Emission Wavelength in Ge1−ySny alloys on silicon
Applied Physics Letters, 2010Co-Authors: Jay Mathews, Richard T. Beeler, John Tolle, Radek Roucka, John Kouvetakis, Jose MenendezAbstract:Direct-gap photoluminescence has been observed at room temperature in Ge1−ySny alloys grown on (001) Si substrates. The Emission Wavelength is tunable over a 90 meV (200 nm) range by increasing the Sn concentration from y=0 to y=0.03. A weaker feature at lower energy is assigned to the indirect gap transitions, and the separation between the direct and indirect Emission peaks is found to decrease as a function of y, as expected for these alloys. These results suggest that Ge1−ySny alloys represent an attractive alternative to Ge for the fabrication of laser devices on Si.