The Experts below are selected from a list of 54 Experts worldwide ranked by ideXlab platform
Yolanda Gonzalez - One of the best experts on this subject based on the ideXlab platform.
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Role of re-growth interface preparation process for spectral line-width reduction of single InAs site-controlled quantum dots
Nanotechnology, 2015Co-Authors: Jesús Herranz, Lukasz Jakub Wewior, Benito Alén, David Fuster, Luisa González, Yolanda GonzalezAbstract:We present growth and optical characterization measurements of single InAs site-controlled quantum dots (SCQDs) grown by molecular beam epitaxy on GaAs (001) Patterned substrates by atomic force microscopy oxidation lithography. InAs SCQDs directly grown on the Patterned surface were used as a seed layer and strain template for the nucleation of optically active single InAs SCQDs. The preservation of the initial geometry of the Engraved Pattern motifs after the re-growth interface preparation process, the lack of buffer layer growth prior to InAs seed layer deposition and the development of suitable growth conditions provide us an improvement of the SCQDs' active layer optical properties while retaining a high ratio of single occupation (89%). In this work a fivefold reduction of the average optical line-width from 870 μeV to 156 μeV for InAs SCQDs located 15 nm from the re-growth interface is obtained by increasing the temperature of the initial thermal treatment step of the re-growth interface from 490 °C to 530 °C.
Jesús Herranz - One of the best experts on this subject based on the ideXlab platform.
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Role of re-growth interface preparation process for spectral line-width reduction of single InAs site-controlled quantum dots
Nanotechnology, 2015Co-Authors: Jesús Herranz, Lukasz Jakub Wewior, Benito Alén, David Fuster, Luisa González, Yolanda GonzalezAbstract:We present growth and optical characterization measurements of single InAs site-controlled quantum dots (SCQDs) grown by molecular beam epitaxy on GaAs (001) Patterned substrates by atomic force microscopy oxidation lithography. InAs SCQDs directly grown on the Patterned surface were used as a seed layer and strain template for the nucleation of optically active single InAs SCQDs. The preservation of the initial geometry of the Engraved Pattern motifs after the re-growth interface preparation process, the lack of buffer layer growth prior to InAs seed layer deposition and the development of suitable growth conditions provide us an improvement of the SCQDs' active layer optical properties while retaining a high ratio of single occupation (89%). In this work a fivefold reduction of the average optical line-width from 870 μeV to 156 μeV for InAs SCQDs located 15 nm from the re-growth interface is obtained by increasing the temperature of the initial thermal treatment step of the re-growth interface from 490 °C to 530 °C.
Lukasz Jakub Wewior - One of the best experts on this subject based on the ideXlab platform.
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Role of re-growth interface preparation process for spectral line-width reduction of single InAs site-controlled quantum dots
Nanotechnology, 2015Co-Authors: Jesús Herranz, Lukasz Jakub Wewior, Benito Alén, David Fuster, Luisa González, Yolanda GonzalezAbstract:We present growth and optical characterization measurements of single InAs site-controlled quantum dots (SCQDs) grown by molecular beam epitaxy on GaAs (001) Patterned substrates by atomic force microscopy oxidation lithography. InAs SCQDs directly grown on the Patterned surface were used as a seed layer and strain template for the nucleation of optically active single InAs SCQDs. The preservation of the initial geometry of the Engraved Pattern motifs after the re-growth interface preparation process, the lack of buffer layer growth prior to InAs seed layer deposition and the development of suitable growth conditions provide us an improvement of the SCQDs' active layer optical properties while retaining a high ratio of single occupation (89%). In this work a fivefold reduction of the average optical line-width from 870 μeV to 156 μeV for InAs SCQDs located 15 nm from the re-growth interface is obtained by increasing the temperature of the initial thermal treatment step of the re-growth interface from 490 °C to 530 °C.
David Fuster - One of the best experts on this subject based on the ideXlab platform.
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Role of re-growth interface preparation process for spectral line-width reduction of single InAs site-controlled quantum dots
Nanotechnology, 2015Co-Authors: Jesús Herranz, Lukasz Jakub Wewior, Benito Alén, David Fuster, Luisa González, Yolanda GonzalezAbstract:We present growth and optical characterization measurements of single InAs site-controlled quantum dots (SCQDs) grown by molecular beam epitaxy on GaAs (001) Patterned substrates by atomic force microscopy oxidation lithography. InAs SCQDs directly grown on the Patterned surface were used as a seed layer and strain template for the nucleation of optically active single InAs SCQDs. The preservation of the initial geometry of the Engraved Pattern motifs after the re-growth interface preparation process, the lack of buffer layer growth prior to InAs seed layer deposition and the development of suitable growth conditions provide us an improvement of the SCQDs' active layer optical properties while retaining a high ratio of single occupation (89%). In this work a fivefold reduction of the average optical line-width from 870 μeV to 156 μeV for InAs SCQDs located 15 nm from the re-growth interface is obtained by increasing the temperature of the initial thermal treatment step of the re-growth interface from 490 °C to 530 °C.
Luisa González - One of the best experts on this subject based on the ideXlab platform.
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Role of re-growth interface preparation process for spectral line-width reduction of single InAs site-controlled quantum dots
Nanotechnology, 2015Co-Authors: Jesús Herranz, Lukasz Jakub Wewior, Benito Alén, David Fuster, Luisa González, Yolanda GonzalezAbstract:We present growth and optical characterization measurements of single InAs site-controlled quantum dots (SCQDs) grown by molecular beam epitaxy on GaAs (001) Patterned substrates by atomic force microscopy oxidation lithography. InAs SCQDs directly grown on the Patterned surface were used as a seed layer and strain template for the nucleation of optically active single InAs SCQDs. The preservation of the initial geometry of the Engraved Pattern motifs after the re-growth interface preparation process, the lack of buffer layer growth prior to InAs seed layer deposition and the development of suitable growth conditions provide us an improvement of the SCQDs' active layer optical properties while retaining a high ratio of single occupation (89%). In this work a fivefold reduction of the average optical line-width from 870 μeV to 156 μeV for InAs SCQDs located 15 nm from the re-growth interface is obtained by increasing the temperature of the initial thermal treatment step of the re-growth interface from 490 °C to 530 °C.