The Experts below are selected from a list of 267 Experts worldwide ranked by ideXlab platform
Holger Vach - One of the best experts on this subject based on the ideXlab platform.
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Deposition of hydrogenated silicon clusters for efficient Epitaxial Growth
Physical Chemistry Chemical Physics, 2018Co-Authors: Fatme Jardali, Holger VachAbstract:Epitaxial silicon thin films grown from the deposition of plasma-born hydrogenated silicon nanoparticles using plasma enhanced chemical vapor deposition techniques have widely been investigated due to their potential applications in photovoltaic and nanoelectronic device technologies. However, the optimal experimental conditions and the underlying Growth mechanisms leading to high-speed Epitaxial Growth of thin silicon films from hydrogenated silicon nanoparticles remain far from being understood. In the present work, extensive molecular dynamics simulations were performed to study the Epitaxial Growth of silicon thin films resulting from the deposition of plasma-born hydrogenated silicon clusters at low substrate temperatures under realistic reactor conditions. Strong evidence is presented that a temporary phase transition of the substrate area around the cluster impact site to the liquid state is necessary for the Epitaxial Growth to take place. We predict further that a non-normal incidence angle for the cluster impact significantly facilitates the Epitaxial Growth of thin crystalline silicon films.
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Deposition of hydrogenated silicon clusters for efficient Epitaxial Growth
Physical Chemistry Chemical Physics, 2018Co-Authors: Fatme Jardali, Holger VachAbstract:Epitaxial silicon thin films grown from the deposition of plasma-born hydrogenated silicon nanoparticles using plasma-enhanced chemical vapor deposition have widely been investigated due to their potential applications in photovoltaic and nanoelectronic device technologies. However, the optimal experimental conditions and the underlying Growth mechanisms leading to the high-speed Epitaxial Growth of thin silicon films from hydrogenated silicon nanoparticles remain far from being understood. In the present work, extensive molecular dynamics simulations were performed to study the Epitaxial Growth of silicon thin films resulting from the deposition of plasma-born hydrogenated silicon clusters at low substrate temperatures under realistic reactor conditions. There is strong evidence that a temporary phase transition of the substrate area around the cluster impact site to the liquid state is necessary for the Epitaxial Growth to take place. We predict further that a non-normal incidence angle for the cluster impact significantly facilitates the Epitaxial Growth of thin crystalline silicon films.
R. Gwilliam - One of the best experts on this subject based on the ideXlab platform.
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Stressed solid-phase Epitaxial Growth of (011) Si
Journal of Materials Research, 2009Co-Authors: N.g. Rudawski, K.s. Jones, R. GwilliamAbstract:The solid-phase Epitaxial Growth kinetics of amorphized (011) Si with application of in-plane $$\left[ {2\overline 1 \,1} \right]$$ uniaxial stress to magnitude of 0.9 ± 0.1 GPa were studied. Tensile stresses did not appreciably change the Growth velocity compared with the stress-free case, whereas compression tended to retard the Growth velocity to approximately one-half the stress-free value. The results are explained using a prior generalized atomistic model of stressed solid-solid phase transformations. In conjunction with prior observations of stressed solid-phase Epitaxial Growth of (001) Si, it is advanced that the activation volume tensor associated with ledge migration may be substrate orientation-dependent.
Fatme Jardali - One of the best experts on this subject based on the ideXlab platform.
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Deposition of hydrogenated silicon clusters for efficient Epitaxial Growth
Physical Chemistry Chemical Physics, 2018Co-Authors: Fatme Jardali, Holger VachAbstract:Epitaxial silicon thin films grown from the deposition of plasma-born hydrogenated silicon nanoparticles using plasma enhanced chemical vapor deposition techniques have widely been investigated due to their potential applications in photovoltaic and nanoelectronic device technologies. However, the optimal experimental conditions and the underlying Growth mechanisms leading to high-speed Epitaxial Growth of thin silicon films from hydrogenated silicon nanoparticles remain far from being understood. In the present work, extensive molecular dynamics simulations were performed to study the Epitaxial Growth of silicon thin films resulting from the deposition of plasma-born hydrogenated silicon clusters at low substrate temperatures under realistic reactor conditions. Strong evidence is presented that a temporary phase transition of the substrate area around the cluster impact site to the liquid state is necessary for the Epitaxial Growth to take place. We predict further that a non-normal incidence angle for the cluster impact significantly facilitates the Epitaxial Growth of thin crystalline silicon films.
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Deposition of hydrogenated silicon clusters for efficient Epitaxial Growth
Physical Chemistry Chemical Physics, 2018Co-Authors: Fatme Jardali, Holger VachAbstract:Epitaxial silicon thin films grown from the deposition of plasma-born hydrogenated silicon nanoparticles using plasma-enhanced chemical vapor deposition have widely been investigated due to their potential applications in photovoltaic and nanoelectronic device technologies. However, the optimal experimental conditions and the underlying Growth mechanisms leading to the high-speed Epitaxial Growth of thin silicon films from hydrogenated silicon nanoparticles remain far from being understood. In the present work, extensive molecular dynamics simulations were performed to study the Epitaxial Growth of silicon thin films resulting from the deposition of plasma-born hydrogenated silicon clusters at low substrate temperatures under realistic reactor conditions. There is strong evidence that a temporary phase transition of the substrate area around the cluster impact site to the liquid state is necessary for the Epitaxial Growth to take place. We predict further that a non-normal incidence angle for the cluster impact significantly facilitates the Epitaxial Growth of thin crystalline silicon films.
Tomonobu Hata - One of the best experts on this subject based on the ideXlab platform.
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Epitaxial Growth properties of Si and SiGe films prepared by ion beam sputtering process
Vacuum, 2000Co-Authors: Kimihiro Sasaki, H Nagai, Tomonobu HataAbstract:Abstract Si and SiGe Epitaxial Growth on Si(1 0 0) substrates by ion beam sputtering were examined. Lateral Epitaxial Growth by surface diffusion of sputtered Si atoms was confirmed to take place. Thicker critical Epitaxial film thickness than that of the MBE grown film was obtained by introducing clean initial surface. SiGe Epitaxial Growth at low temperatures was realized as well by alternate sputtering.
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Epitaxial Growth of SiGe thin films by ion-beam sputtering
Applied Surface Science, 1997Co-Authors: Kimihiro Sasaki, Keiichi Nakata, Tomonobu HataAbstract:Abstract Epitaxial Growth of Si and SiGe film on Si(100) substrate is investigated by employing a ion-beam sputtering technique. SiGe films are prepared by layer by layer sequence using the alternate sputtering method. Marked island Growth of Ge film is confirmed at a higher substrate temperature than 600°C. Homo-Epitaxial Growth of Si starts at a substrate temperature of 400°C. At 600°C the RHEED image of Si film shows a clear streak pattern, further increasing to 670°C it shows a Kikuchi-line. As for Si0.75Ge0.25 film, hetero-Epitaxial Growth takes place at 450°C after poly-crystalline Growth region. At 500°C hetero-Epitaxial film with considerably good crystallinity is obtained with suppressing surface roughness.
N.g. Rudawski - One of the best experts on this subject based on the ideXlab platform.
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Stressed solid-phase Epitaxial Growth of (011) Si
Journal of Materials Research, 2009Co-Authors: N.g. Rudawski, K.s. Jones, R. GwilliamAbstract:The solid-phase Epitaxial Growth kinetics of amorphized (011) Si with application of in-plane $$\left[ {2\overline 1 \,1} \right]$$ uniaxial stress to magnitude of 0.9 ± 0.1 GPa were studied. Tensile stresses did not appreciably change the Growth velocity compared with the stress-free case, whereas compression tended to retard the Growth velocity to approximately one-half the stress-free value. The results are explained using a prior generalized atomistic model of stressed solid-solid phase transformations. In conjunction with prior observations of stressed solid-phase Epitaxial Growth of (001) Si, it is advanced that the activation volume tensor associated with ledge migration may be substrate orientation-dependent.