The Experts below are selected from a list of 218286 Experts worldwide ranked by ideXlab platform
Yoshiji Horikoshi - One of the best experts on this subject based on the ideXlab platform.
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Area-selective Epitaxy of GaAs by migration-enhanced Epitaxy with As2 and As4 arsenic sources
Applied Surface Science, 2008Co-Authors: Atsushi Kawaharazuka, Ippei Yoshiba, Yoshiji HorikoshiAbstract:Abstract We demonstrate area-selective Epitaxy by migration-enhanced Epitaxy with As2 and As4 as arsenic sources. The distinct whisker structure growing in [1 1 1]B direction is obtained when employing As2 as an arsenic source, while (1 1 1)B facet is formed with As4. The difference in the facet formation can be explained by the formation of As-trimer, which significantly reduces the growth rate of the (1 1 1)B surface. With As2, area-selective Epitaxy can be achieved at lower arsenic pressure condition, where less As-trimers are formed. Therefore, growth in the [1 1 1]B direction is enhanced.
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Area selective Epitaxy of GaAs with AlGaAs native oxide mask by molecular beam Epitaxy
Journal of Crystal Growth, 2007Co-Authors: Ippei Yoshiba, Takayuki Iwai, Takahiro Uehara, Yoshiji HorikoshiAbstract:We have carried out area selective Epitaxy of GaAs on GaAs substrates using a native oxide film of AlGaAs as a mask material. By optimizing the AlAs fraction and the thickness of AlGaAs mask layer, well-defined area selective Epitaxy has been achieved on (00 1) and (1 11)B GaAs substrates by migration-enhanced Epitaxy. No discernible difference is observed in both the shapes and the facets of the grown structures between the growth using AlGaAs native oxide and SiO 2 masks. It is found that the shape of the grown structures can be easily controlled by As 4 pressure during growth. It has been proved that the AlGaAs native oxide film is useful as a mask material in area selective Epitaxy instead of the SiO 2 mask.
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Advanced epitaxial growth techniques: atomic layer Epitaxy and migration-enhanced Epitaxy
Journal of Crystal Growth, 1999Co-Authors: Yoshiji HorikoshiAbstract:New epitaxial growth techniques based on modulated source supplies such as atomic layer Epitaxy (ALE) and migration-enhanced Epitaxy (MEE) have been developed to grow atomically controlled surfaces and interfaces of compound semiconductors. ALE is based on repeated adsorption saturation of constituent atoms on the substrate surface which guarantees complete 1 ML coverage. To achieve an adsorption saturation, volatile compound sources are often used for low vapor-pressure elements. In contrast, the MEE process is simply composed of an alternate supply of pure constituent atoms. Because of this simplicity, MEE has been applied to both metalorganic vapor phase Epitaxy (MOVPE) and molecular beam Epitaxy (MBE). In MEE, layer-by-layer growth takes place with the commensurate deposition of group III atoms. Even for an imcommensulate deposition, in principle, the roughness of the resulting surface is at most 1 ML. MEE has found a variety of applications in the growth of heterostructures with largely lattice-mismatched systems, wires and dots, selective area Epitaxy of fine structures, and so on.
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Characteristics of AlGaAs/GaAs heterostructures grown by migration-enhanced Epitaxy at high temperatures
Semiconductor Science and Technology, 1995Co-Authors: M. Kawashima, Takashi Saku, Yoshiji HorikoshiAbstract:Migration-enhanced Epitaxy at relatively high temperatures has been reported to deteriorate the crystal quality and photoluminescence characteristics of AlGaAs/GaAs heterostructures, and we investigated this phenomenon by comparing the AlGaAs/GaAs heterostructures grown by migration-enhanced Epitaxy with those grown by conventional molecular beam Epitaxy. The single-quantum-well structures grown by migration-enhanced Epitaxy at 580 and 660 degrees C exhibited defect-induced photoluminescence. Consideration of the surface equilibrium suggests that this degradation is caused by the evaporation of As from the growing surface, and we found that this can be prevented by applying a supplementary As beam during the deposition of Ga or Al or both. This supplementary beam is much less intense than that needed to sustain the growth by molecular beam Epitaxy (only 5% at 580 degrees C). The photoluminescence degradation reported by others, however, is too extensive to be reproduced in our experiment even considering the shortage of As on the growing surface. Their result may be caused by an additional contamination not directly related to the migration-enhanced Epitaxy process.
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Migration-enhanced Epitaxy of GaAs and AlGaAs
Semiconductor Science and Technology, 1993Co-Authors: Yoshiji HorikoshiAbstract:The principle and characteristics of migration-enhanced Epitaxy are reviewed. Migration of surface adatoms along the surface is very important for growing high quality layers and atomically flat heterojunctions. In the migration-enhanced Epitaxy of GaAs and AlGaAs, migration of surface Ga and Al atoms is enhanced even at low substrate temperatures by evaporating them onto a clean GaAs surface under an As-free or low As pressure atmosphere. Thus, high quality GaAs and AlGaAs layers and flat heterojunctions have been grown by this method. Migration-enhanced Epitaxy has also proved useful in investigating atomic processes during epitaxial growth.
H J Osten - One of the best experts on this subject based on the ideXlab platform.
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cooperative solid vapor phase Epitaxy an approach for fabrication of single crystalline insulator si insulator nanostructures
Applied Physics Letters, 2006Co-Authors: A Fissel, D Kuhne, E Bugiel, H J OstenAbstract:We study the growth of insulator/Si/insulator nanostructures on Si(111) using molecular beam Epitaxy. Based on different investigations, we develop an approach for the fabrication of a nanostructure with a continuous ultrathin single-crystalline silicon buried in a single-crystalline insulator matrix with sharp interfaces. This approach is based on an epitaxial encapsulated solid-phase Epitaxy, in which the solid-phase Epitaxy of silicon is accompanied by a vapor-phase Epitaxy of the second insulator layer. We call this approach as cooperative solid-vapor-phase Epitaxy. As an example we demonstrate the growth of buried epitaxial silicon in epitaxial Gd2O3.
Corrado Bongiorno - One of the best experts on this subject based on the ideXlab platform.
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Interface roughening and defect nucleation during solid phase Epitaxy regrowth of doped and intrinsic Si0.83Ge0.17 alloys
Journal of Applied Physics, 2007Co-Authors: D. D’angelo, A. M. Piro, Maria Grazia Grimaldi, Salvo Mirabella, Antonio Terrasi, Corrado BongiornoAbstract:Metastable pseudomorphic Si0.83Ge0.17 with thickness of 135nm was deposited on (001) Si substrate by molecular beam Epitaxy and amorphized to a depth of ∼360nm, using 3×1015cm−2 Ge ions at 270keV. Samples were regrown by solid phase Epitaxy in the 500–600°C temperature range. The regrowth rate was measured in situ by time resolved reflectivity, while the structure of the epilayers was investigated by transmission electron microscopy. Three regions can be distinguished in SiGe after solid phase Epitaxy, independent of the annealing temperature: (1) a 20nm defect-free layer close to the original crystal-amorphous interface, (2) a middle region with a high density of planar defects, and (3) a layer with dislocations and stacking faults extending up to the surface. The activation energy of the SiGe solid phase Epitaxy is equal to the activation energy of Si except in the middle region. The amorphous-crystal interface evolution was studied by transmission electron microscopy of partially regrown samples. In or...
Kazunari Ozasa - One of the best experts on this subject based on the ideXlab platform.
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Selective Epitaxy with in situ mask processing and pulse plasma
Advances in Colloid and Interface Science, 1997Co-Authors: Kazunari OzasaAbstract:This article reviews the author's PRESTO research on the selective Epitaxy control of III-V semiconductors in pursuit of atomic-scale microfabrication technologies. The selective Epitaxy of GaAs or AlAs has been investigated with the view points of in situ mask processing and modification of selectivity by pulsed plasma. The investigation has revealed that the indium oxide (In2O3) has a high potential as a mask material for the in situ selective Epitaxy, since In2O3 can be formed in vacuum selectively and removed by hydrogen plasma. The advanced Epitaxy technique, short-pulsed chemical beam Epitaxy (SP-CBE) has been proposed and examined, where the cancellation of selectivity with pulsed plasma was found for AlAs Epitaxy with SP-CBE on SiO2 using dimethylaluminumhydride (DMAIH).
W. T. Tsang - One of the best experts on this subject based on the ideXlab platform.
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Chemical beam Epitaxy and related techniques
1997Co-Authors: John S. Foord, G J Davies, W. T. TsangAbstract:Chemical Beam Epitaxy: An Introduction (G. Davies, et al.). Growth Apparatus Design and Safety Considerations (F. Alexandre & J. Benchimol). Precursors for Chemical Beam Epitaxy (D. Bohling). Reaction Mechanisms for III-V Semiconductor Growth by Chemical Beam Epitaxy: Physical Origins of the Growth Kinetics and Film Purities Observed (J. Foord). Growth of GaAs-Based Devices by Chemical Beam Epitaxy (C. Abernathy). CBE InP-Based Materials and Devices (W. Tsang & T. Chiu). MOMBE of Antiminides and Growth Model (H. Asahi). Chemical Beam Epitaxy of Widegap II-VI Compound Semiconductors (A. Yoshikawa). Gas Source Molecular Beam Epitaxy of Silicon and Related Materials (Y. Shiraki). Gas Source Molecular Beam Epitaxy (L. Goldstein). Dopants and Dopant Incorporation (T. Whitaker & T. Martin). Selected Area Epitaxy (H. Heinecke & G. Davies). Chemical Beam Etching (W. Tsang & T. Chiu). Laser-Assisted Epitaxy (H. Sugiura). Index.
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Chemical beam Epitaxy and related techniques
1997Co-Authors: John S. Foord, G J Davies, W. T. TsangAbstract:Chemical Beam Epitaxy: An Introduction (G. Davies, et al.). Growth Apparatus Design and Safety Considerations (F. Alexandre & J. Benchimol). Precursors for Chemical Beam Epitaxy (D. Bohling). Reaction Mechanisms for III-V Semiconductor Growth by Chemical Beam Epitaxy: Physical Origins of the Growth Kinetics and Film Purities Observed (J. Foord). Growth of GaAs-Based Devices by Chemical Beam Epitaxy (C. Abernathy). CBE InP-Based Materials and Devices (W. Tsang & T. Chiu). MOMBE of Antiminides and Growth Model (H. Asahi). Chemical Beam Epitaxy of Widegap II-VI Compound Semiconductors (A. Yoshikawa). Gas Source Molecular Beam Epitaxy of Silicon and Related Materials (Y. Shiraki). Gas Source Molecular Beam Epitaxy (L. Goldstein). Dopants and Dopant Incorporation (T. Whitaker & T. Martin). Selected Area Epitaxy (H. Heinecke & G. Davies). Chemical Beam Etching (W. Tsang & T. Chiu). Laser-Assisted Epitaxy (H. Sugiura). Index.
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Selective area Epitaxy and growth over patterned substrates by chemical beam Epitaxy
Electronics Letters, 1991Co-Authors: W. T. Tsang, M. C. Wu, Li Yang, Y. K. ChenAbstract:Selective area Epitaxy and growth over patterned substrate using chemical beam Epitaxy (CBE) were investigated. Truly selective area Epitaxy with no deposition over the SiO2 masks has been routinely obtained with excellent epilayer morphology. Uniform coverage was obtained for regrowth over etched mesas to form buried heterostructures. For growth over etch channels, very unique growth characteristics were obtained. Buried crescent stripes similar to those formed by liquid-phase Epitaxy inside channels were also obtained by CBE. These growth characteristics demonstrated the unique of CBE for diode laser fabrication.
