The Experts below are selected from a list of 321 Experts worldwide ranked by ideXlab platform
Shun‐ichi Tohno - One of the best experts on this subject based on the ideXlab platform.
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1 54 μm photoluminescence of in situ Erbium oxygen co doped silicon films grown by ion beam epitaxy
Journal of Applied Physics, 1995Co-Authors: Morito Matsuoka, Shun‐ichi TohnoAbstract:Erbium‐doped silicon films are grown by ion‐beam epitaxy using an electric‐mirror sputtering‐type metal ion source in an ultrahigh vacuum. In situ Erbium doping with concentrations ranging from 1×1016 to 6×1020 cm−3 is achieved by sputtering the Erbium metal pellet with ions extracted from the silicon metal ion source. The oxygen concentration in the films, which is closely related to the effective luminescence of Erbium in silicon, is also controlled in situ over the range from below 1×1018 to 2×1020 cm−3 by using argon gases containing 1 ppb–100 ppm of oxygen impurities. The Erbium incorporation efficiency drastically increases (by two or more orders of magnitude) when oxygen is contained in the argon gas during film growth. Erbium segregation is well suppressed by the oxidation. Photoluminescence with a wavelength of 1.54 μm is clearly observed in as‐deposited films grown typically at 500 °C with argon gas containing 5 ppm of oxygen. The maximum luminescence intensity is obtained at an Erbium concentra...
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1.54 μm wavelength emission of Erbium‐doped silicon films grown by ion beam epitaxy using sputtering‐type metal ion source
Applied Physics Letters, 1995Co-Authors: Morito Matsuoka, Shun‐ichi TohnoAbstract:Erbium‐doped silicon films are grown by ion beam epitaxy using a newly developed electric‐mirror sputtering‐type metal ion source in an ultrahigh vacuum. A precise and steep profile of the Erbium concentration, ranging from 1×1016 to 6×1020 cm−3, is achieved in situ by sputtering the Erbium metal pellet with ions extracted from the silicon ion source. The oxygen concentration in the films, which is important to effective luminescence of Erbium in silicon, is controlled in situ in the range from below 1×1018 to 2×1020 cm−3 by using argon gases containing oxygen impurities ranging from 1 ppb to 100 ppm. The oxygen concentration trapped in the silicon films strongly depends on the Erbium concentration doped in the films. The Erbium atoms are selectively oxidized in the host silicon film. As a result, the photoluminescence of 1.54 μm wavelength light is clearly observed in as‐deposited films.
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1 54 μm wavelength emission of Erbium doped silicon films grown by ion beam epitaxy using sputtering type metal ion source
Applied Physics Letters, 1995Co-Authors: Morito Matsuoka, Shun‐ichi TohnoAbstract:Erbium‐doped silicon films are grown by ion beam epitaxy using a newly developed electric‐mirror sputtering‐type metal ion source in an ultrahigh vacuum. A precise and steep profile of the Erbium concentration, ranging from 1×1016 to 6×1020 cm−3, is achieved in situ by sputtering the Erbium metal pellet with ions extracted from the silicon ion source. The oxygen concentration in the films, which is important to effective luminescence of Erbium in silicon, is controlled in situ in the range from below 1×1018 to 2×1020 cm−3 by using argon gases containing oxygen impurities ranging from 1 ppb to 100 ppm. The oxygen concentration trapped in the silicon films strongly depends on the Erbium concentration doped in the films. The Erbium atoms are selectively oxidized in the host silicon film. As a result, the photoluminescence of 1.54 μm wavelength light is clearly observed in as‐deposited films.
Thomas F. Kuech - One of the best experts on this subject based on the ideXlab platform.
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Incorporation of optically active Erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)Erbium
Journal of Applied Physics, 1999Co-Authors: J. G. Cederberg, Thomas D. Culp, B. Bieg, Charles H. Winter, Kevin L. Bray, Douglas R. Pfeiffer, Thomas F. KuechAbstract:We have investigated the use of an alternative Erbium precursor, tris(3,5-di-tert-butyl- pyrazolato)bis(4-tert-butylpyridine)Erbium, to dope Erbium into GaAs. The incorporated Erbium forms an optically active center identified as Er–2O. The GaAs:Er formed using this precursor exhibits sharper and more intense optical emission, attributed to the Er–2O center, than that previously found with cylcopentadienyl-based Erbium sources. Codoping GaAs:Er with shallow donors results in a quenching of the Erbium-related luminescence, while codoping with shallow acceptors results in no significant change in the spectrum. Mechanisms for the observed luminescence-quenching behavior are discussed. Deep level transient spectroscopy performed on silicon or selenium codoped GaAs:Er showed the presence of several electron traps in the upper half of the band gap. The origins of these electron traps are considered.
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Erbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)Erbium
Journal of Crystal Growth, 1998Co-Authors: J. G. Cederberg, Thomas D. Culp, B. Bieg, Dirk Pfeiffer, Charles H. Winter, Kevin L. Bray, Thomas F. KuechAbstract:Abstract A new Erbium precursor, tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)Erbium, was used to dope GaAs. Some of the incorporated Erbium forms an optically active center identified as Er-2O. The optical line shape attributed to this Er-2O center is much sharper and more intense than in GaAs doped with Erbium using cyclopentadienyl-based Erbium sources. Co-doping GaAs : Er with shallow donors results in a quenching of the Erbium-related luminescence, while co-doping with shallow acceptors results in no significant change in the Er-based spectrum. Mechanisms for this observed luminescence-quenching behavior are presented. Deep level transient spectroscopy performed on silicon or selenium co-doped GaAs : Er showed the presence of several electron traps in the upper half of the band gap.
Kevin L. Bray - One of the best experts on this subject based on the ideXlab platform.
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Incorporation of optically active Erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)Erbium
Journal of Applied Physics, 1999Co-Authors: J. G. Cederberg, Thomas D. Culp, B. Bieg, Charles H. Winter, Kevin L. Bray, Douglas R. Pfeiffer, Thomas F. KuechAbstract:We have investigated the use of an alternative Erbium precursor, tris(3,5-di-tert-butyl- pyrazolato)bis(4-tert-butylpyridine)Erbium, to dope Erbium into GaAs. The incorporated Erbium forms an optically active center identified as Er–2O. The GaAs:Er formed using this precursor exhibits sharper and more intense optical emission, attributed to the Er–2O center, than that previously found with cylcopentadienyl-based Erbium sources. Codoping GaAs:Er with shallow donors results in a quenching of the Erbium-related luminescence, while codoping with shallow acceptors results in no significant change in the spectrum. Mechanisms for the observed luminescence-quenching behavior are discussed. Deep level transient spectroscopy performed on silicon or selenium codoped GaAs:Er showed the presence of several electron traps in the upper half of the band gap. The origins of these electron traps are considered.
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Erbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)Erbium
Journal of Crystal Growth, 1998Co-Authors: J. G. Cederberg, Thomas D. Culp, B. Bieg, Dirk Pfeiffer, Charles H. Winter, Kevin L. Bray, Thomas F. KuechAbstract:Abstract A new Erbium precursor, tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)Erbium, was used to dope GaAs. Some of the incorporated Erbium forms an optically active center identified as Er-2O. The optical line shape attributed to this Er-2O center is much sharper and more intense than in GaAs doped with Erbium using cyclopentadienyl-based Erbium sources. Co-doping GaAs : Er with shallow donors results in a quenching of the Erbium-related luminescence, while co-doping with shallow acceptors results in no significant change in the Er-based spectrum. Mechanisms for this observed luminescence-quenching behavior are presented. Deep level transient spectroscopy performed on silicon or selenium co-doped GaAs : Er showed the presence of several electron traps in the upper half of the band gap.
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Erbium doped SiO2 layers formed on the surface of silicon by spark processing
Chemistry of Materials, 1997Co-Authors: John St. John, Thomas D. Culp, Jeffery L. Coffer, Young Gyu Rho, Patrick Diehl, Russell F. Pinizzotto, Kevin L. BrayAbstract:We present structural and spectroscopic analyses of luminescent Erbium-doped porous SiO2 layers on silicon formed using a spark processing technique. Scanning electron microscopy reveals a surface of irregular holes covered by a SiO2 layer. Concomitant energy-dispersive X-ray mapping experiments show that the Erbium concentration in the porous layer can be controlled by varying the molarity of the Erbium solution deposited on the substrate prior to spark processing. Both visible and near-infrared photoluminescence spectroscopy, under conditions of varying temperature and excitation power, have been used to study the nature of the Erbium centers formed in the porous layer. Self-quenching of Er3+ photoluminescence at 1.54 μm occurs at the highest concentrations of Erbium employed.
Thomas D. Culp - One of the best experts on this subject based on the ideXlab platform.
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Incorporation of optically active Erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)Erbium
Journal of Applied Physics, 1999Co-Authors: J. G. Cederberg, Thomas D. Culp, B. Bieg, Charles H. Winter, Kevin L. Bray, Douglas R. Pfeiffer, Thomas F. KuechAbstract:We have investigated the use of an alternative Erbium precursor, tris(3,5-di-tert-butyl- pyrazolato)bis(4-tert-butylpyridine)Erbium, to dope Erbium into GaAs. The incorporated Erbium forms an optically active center identified as Er–2O. The GaAs:Er formed using this precursor exhibits sharper and more intense optical emission, attributed to the Er–2O center, than that previously found with cylcopentadienyl-based Erbium sources. Codoping GaAs:Er with shallow donors results in a quenching of the Erbium-related luminescence, while codoping with shallow acceptors results in no significant change in the spectrum. Mechanisms for the observed luminescence-quenching behavior are discussed. Deep level transient spectroscopy performed on silicon or selenium codoped GaAs:Er showed the presence of several electron traps in the upper half of the band gap. The origins of these electron traps are considered.
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Erbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)Erbium
Journal of Crystal Growth, 1998Co-Authors: J. G. Cederberg, Thomas D. Culp, B. Bieg, Dirk Pfeiffer, Charles H. Winter, Kevin L. Bray, Thomas F. KuechAbstract:Abstract A new Erbium precursor, tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)Erbium, was used to dope GaAs. Some of the incorporated Erbium forms an optically active center identified as Er-2O. The optical line shape attributed to this Er-2O center is much sharper and more intense than in GaAs doped with Erbium using cyclopentadienyl-based Erbium sources. Co-doping GaAs : Er with shallow donors results in a quenching of the Erbium-related luminescence, while co-doping with shallow acceptors results in no significant change in the Er-based spectrum. Mechanisms for this observed luminescence-quenching behavior are presented. Deep level transient spectroscopy performed on silicon or selenium co-doped GaAs : Er showed the presence of several electron traps in the upper half of the band gap.
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Erbium doped SiO2 layers formed on the surface of silicon by spark processing
Chemistry of Materials, 1997Co-Authors: John St. John, Thomas D. Culp, Jeffery L. Coffer, Young Gyu Rho, Patrick Diehl, Russell F. Pinizzotto, Kevin L. BrayAbstract:We present structural and spectroscopic analyses of luminescent Erbium-doped porous SiO2 layers on silicon formed using a spark processing technique. Scanning electron microscopy reveals a surface of irregular holes covered by a SiO2 layer. Concomitant energy-dispersive X-ray mapping experiments show that the Erbium concentration in the porous layer can be controlled by varying the molarity of the Erbium solution deposited on the substrate prior to spark processing. Both visible and near-infrared photoluminescence spectroscopy, under conditions of varying temperature and excitation power, have been used to study the nature of the Erbium centers formed in the porous layer. Self-quenching of Er3+ photoluminescence at 1.54 μm occurs at the highest concentrations of Erbium employed.
Morito Matsuoka - One of the best experts on this subject based on the ideXlab platform.
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1 54 μm photoluminescence of in situ Erbium oxygen co doped silicon films grown by ion beam epitaxy
Journal of Applied Physics, 1995Co-Authors: Morito Matsuoka, Shun‐ichi TohnoAbstract:Erbium‐doped silicon films are grown by ion‐beam epitaxy using an electric‐mirror sputtering‐type metal ion source in an ultrahigh vacuum. In situ Erbium doping with concentrations ranging from 1×1016 to 6×1020 cm−3 is achieved by sputtering the Erbium metal pellet with ions extracted from the silicon metal ion source. The oxygen concentration in the films, which is closely related to the effective luminescence of Erbium in silicon, is also controlled in situ over the range from below 1×1018 to 2×1020 cm−3 by using argon gases containing 1 ppb–100 ppm of oxygen impurities. The Erbium incorporation efficiency drastically increases (by two or more orders of magnitude) when oxygen is contained in the argon gas during film growth. Erbium segregation is well suppressed by the oxidation. Photoluminescence with a wavelength of 1.54 μm is clearly observed in as‐deposited films grown typically at 500 °C with argon gas containing 5 ppm of oxygen. The maximum luminescence intensity is obtained at an Erbium concentra...
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1.54 μm wavelength emission of Erbium‐doped silicon films grown by ion beam epitaxy using sputtering‐type metal ion source
Applied Physics Letters, 1995Co-Authors: Morito Matsuoka, Shun‐ichi TohnoAbstract:Erbium‐doped silicon films are grown by ion beam epitaxy using a newly developed electric‐mirror sputtering‐type metal ion source in an ultrahigh vacuum. A precise and steep profile of the Erbium concentration, ranging from 1×1016 to 6×1020 cm−3, is achieved in situ by sputtering the Erbium metal pellet with ions extracted from the silicon ion source. The oxygen concentration in the films, which is important to effective luminescence of Erbium in silicon, is controlled in situ in the range from below 1×1018 to 2×1020 cm−3 by using argon gases containing oxygen impurities ranging from 1 ppb to 100 ppm. The oxygen concentration trapped in the silicon films strongly depends on the Erbium concentration doped in the films. The Erbium atoms are selectively oxidized in the host silicon film. As a result, the photoluminescence of 1.54 μm wavelength light is clearly observed in as‐deposited films.
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1 54 μm wavelength emission of Erbium doped silicon films grown by ion beam epitaxy using sputtering type metal ion source
Applied Physics Letters, 1995Co-Authors: Morito Matsuoka, Shun‐ichi TohnoAbstract:Erbium‐doped silicon films are grown by ion beam epitaxy using a newly developed electric‐mirror sputtering‐type metal ion source in an ultrahigh vacuum. A precise and steep profile of the Erbium concentration, ranging from 1×1016 to 6×1020 cm−3, is achieved in situ by sputtering the Erbium metal pellet with ions extracted from the silicon ion source. The oxygen concentration in the films, which is important to effective luminescence of Erbium in silicon, is controlled in situ in the range from below 1×1018 to 2×1020 cm−3 by using argon gases containing oxygen impurities ranging from 1 ppb to 100 ppm. The oxygen concentration trapped in the silicon films strongly depends on the Erbium concentration doped in the films. The Erbium atoms are selectively oxidized in the host silicon film. As a result, the photoluminescence of 1.54 μm wavelength light is clearly observed in as‐deposited films.
