The Experts below are selected from a list of 225 Experts worldwide ranked by ideXlab platform
Isao Tanaka - One of the best experts on this subject based on the ideXlab platform.
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effects of the diameter of rutile tio2 single crystals grown using tilting mirror type infrared heating image furnace on solid liquid interface and Etch Pit density
Journal of Crystal Growth, 2011Co-Authors: Md Abdur Razzaque Sarker, Satoshi Watauchi, Masanori Nagao, Takashi Watanabe, Isamu Shindo, Isao TanakaAbstract:Abstract The effects of the diameter of a rutile (TiO 2 ) crystal on interface shape during TiO 2 crystal growth by the floating zone (FZ) method using a tilting-mirror-type image furnace and on the Etch Pit density (EPD) of rutile single crystals were examined. To investigate the diameter effect on the interface shape, the grown crystal diameter was varied from 6 to 11 mm at two different tilting angles ( θ ) of 0° and 20°, respectively. The interface shape was characterized by the convexity ( h/r ) of interface, where h and r represent the height of the interface and the radius of the grown crystals. The h/r of the crystal–melt interface decreased from 0.15 to 0.0 with an increase in the crystal diameter from 6.5 to 11.2 mm at θ =20°, whereas it increased from 0.45 to 0.58 with an increase in the crystal diameter from 6.0 to 11.0 mm at θ =0°. This result suggests that the molten zone becomes stable at θ =20° for the growth of crystals with a larger diameter. To investigate the crystal diameter effect on the EPD, rutile single crystals with diameters of 10, 16 and 19 mm were grown at θ =20°. The EPDs at the center were 1.0−1.4×10 4 cm −2 , which were much smaller than those at the periphery, i.e., 8.0−13.0×10 4 cm −2 , for all the grown crystals with different diameters.
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reduced Etch Pit density of rutile tio2 single crystals by growth using a tilting mirror type infrared heating image furnace
Crystal Growth & Design, 2010Co-Authors: Md Abdur Razzaque Sarker, Satoshi Watauchi, Masanori Nagao, Takashi Watanabe, Isamu Shindo, Isao TanakaAbstract:Rutile single crystals were grown by the floating zone (FZ) method using a tilting-mirror-type image furnace. The tilting angle (θ) of the mirrors during the growth was changed from 0 to 10 and 20° to examine the effects of θ on crystal quality. The Etch Pit density (EPD) at the center of the crystals was low compared with that at the periphery. The EPDs at the periphery and center of the crystals grown at θ = 0° were (11−16) × 104 and 5 × 104 cm−2, respectively. Both values significantly decreased with an increase in θ. In the crystal grown at θ = 20°, the EPDs at the periphery and center were 7.9 × 104 and 1.5 × 104 cm−2, respectively. In particular, at the center of the crystals, the EPD for θ = 20° was 30% of that for θ = 0°. This result suggests that the quality of rutile crystals can be improved by tilting the focusing mirrors used in crystal growth.
Md Abdur Razzaque Sarker - One of the best experts on this subject based on the ideXlab platform.
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effects of the diameter of rutile tio2 single crystals grown using tilting mirror type infrared heating image furnace on solid liquid interface and Etch Pit density
Journal of Crystal Growth, 2011Co-Authors: Md Abdur Razzaque Sarker, Satoshi Watauchi, Masanori Nagao, Takashi Watanabe, Isamu Shindo, Isao TanakaAbstract:Abstract The effects of the diameter of a rutile (TiO 2 ) crystal on interface shape during TiO 2 crystal growth by the floating zone (FZ) method using a tilting-mirror-type image furnace and on the Etch Pit density (EPD) of rutile single crystals were examined. To investigate the diameter effect on the interface shape, the grown crystal diameter was varied from 6 to 11 mm at two different tilting angles ( θ ) of 0° and 20°, respectively. The interface shape was characterized by the convexity ( h/r ) of interface, where h and r represent the height of the interface and the radius of the grown crystals. The h/r of the crystal–melt interface decreased from 0.15 to 0.0 with an increase in the crystal diameter from 6.5 to 11.2 mm at θ =20°, whereas it increased from 0.45 to 0.58 with an increase in the crystal diameter from 6.0 to 11.0 mm at θ =0°. This result suggests that the molten zone becomes stable at θ =20° for the growth of crystals with a larger diameter. To investigate the crystal diameter effect on the EPD, rutile single crystals with diameters of 10, 16 and 19 mm were grown at θ =20°. The EPDs at the center were 1.0−1.4×10 4 cm −2 , which were much smaller than those at the periphery, i.e., 8.0−13.0×10 4 cm −2 , for all the grown crystals with different diameters.
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reduced Etch Pit density of rutile tio2 single crystals by growth using a tilting mirror type infrared heating image furnace
Crystal Growth & Design, 2010Co-Authors: Md Abdur Razzaque Sarker, Satoshi Watauchi, Masanori Nagao, Takashi Watanabe, Isamu Shindo, Isao TanakaAbstract:Rutile single crystals were grown by the floating zone (FZ) method using a tilting-mirror-type image furnace. The tilting angle (θ) of the mirrors during the growth was changed from 0 to 10 and 20° to examine the effects of θ on crystal quality. The Etch Pit density (EPD) at the center of the crystals was low compared with that at the periphery. The EPDs at the periphery and center of the crystals grown at θ = 0° were (11−16) × 104 and 5 × 104 cm−2, respectively. Both values significantly decreased with an increase in θ. In the crystal grown at θ = 20°, the EPDs at the periphery and center were 7.9 × 104 and 1.5 × 104 cm−2, respectively. In particular, at the center of the crystals, the EPD for θ = 20° was 30% of that for θ = 0°. This result suggests that the quality of rutile crystals can be improved by tilting the focusing mirrors used in crystal growth.
Jiecai Han - One of the best experts on this subject based on the ideXlab platform.
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tridimensional morphology and kinetics of Etch Pit on the 0 0 0 1 plane of sapphire crystal
Journal of Solid State Chemistry, 2012Co-Authors: Lunyong Zhang, Jianfei Sun, Hongbo Zuo, Zhiyong Yuan, Ji Zhou, Dawei Xing, Jiecai HanAbstract:The tridimensional morphology and Etching kinetics of the Etch Pit on the C-{0 0 0 1} plane of sapphire crystal (a-Al2O3) in molten KOH were studied experimentally. It was shown that the Etch Pit takes on tridimensional morphologies with triangular symmetry same as the symmetric property of the sapphire crystal. Pits like centric and eccentric triangular pyramid as well as hexagonal pyramid were observed, but the latter is less in density. In-depth analyses show the side walls of the Etch Pits belong to the {1 10 2} family, and the triangular Pit contains edges full composed by Al 3 þ ions on the Etching
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tridimensional morphology and kinetics of Etch Pit on the 0001 plane of sapphire crystal
viXra, 2011Co-Authors: Lunyong Zhang, Jianfei Sun, Hongbo Zuo, Zhiyong Yuan, Ji Zhou, Dawei Xing, Jiecai HanAbstract:The tridimensional morphology and Etching kinetics of the Etch Pit on the C-{0001} plane of sapphire crystal (a-Al2O3) in KOH molten were studied experimentally. It was shown that the Etch Pit takes on tridimensional morphologies with triangular symmetry same as the symmetric property of the sapphire crystal. Pits like centric and eccentric triangular pyramid as well as hexagonal pyramid could be observed, but the latter is much less in density. Analyses show the side walls of the Etch Pits belong to the {1 0 } family, and the triangular Pit contains edges full composed by Al3+ ions on the Etching surface so it is more stable than the hexagonal Pit since whose edges on the Etch surface contains Al2+ ions. The Etch Pits developed in manner of kinematic wave by the step moving with constant speed controlled by the chemical reaction with activation energy of 96.6KJ/mol between Al2O3 and KOH.
Satoshi Watauchi - One of the best experts on this subject based on the ideXlab platform.
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effects of the diameter of rutile tio2 single crystals grown using tilting mirror type infrared heating image furnace on solid liquid interface and Etch Pit density
Journal of Crystal Growth, 2011Co-Authors: Md Abdur Razzaque Sarker, Satoshi Watauchi, Masanori Nagao, Takashi Watanabe, Isamu Shindo, Isao TanakaAbstract:Abstract The effects of the diameter of a rutile (TiO 2 ) crystal on interface shape during TiO 2 crystal growth by the floating zone (FZ) method using a tilting-mirror-type image furnace and on the Etch Pit density (EPD) of rutile single crystals were examined. To investigate the diameter effect on the interface shape, the grown crystal diameter was varied from 6 to 11 mm at two different tilting angles ( θ ) of 0° and 20°, respectively. The interface shape was characterized by the convexity ( h/r ) of interface, where h and r represent the height of the interface and the radius of the grown crystals. The h/r of the crystal–melt interface decreased from 0.15 to 0.0 with an increase in the crystal diameter from 6.5 to 11.2 mm at θ =20°, whereas it increased from 0.45 to 0.58 with an increase in the crystal diameter from 6.0 to 11.0 mm at θ =0°. This result suggests that the molten zone becomes stable at θ =20° for the growth of crystals with a larger diameter. To investigate the crystal diameter effect on the EPD, rutile single crystals with diameters of 10, 16 and 19 mm were grown at θ =20°. The EPDs at the center were 1.0−1.4×10 4 cm −2 , which were much smaller than those at the periphery, i.e., 8.0−13.0×10 4 cm −2 , for all the grown crystals with different diameters.
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reduced Etch Pit density of rutile tio2 single crystals by growth using a tilting mirror type infrared heating image furnace
Crystal Growth & Design, 2010Co-Authors: Md Abdur Razzaque Sarker, Satoshi Watauchi, Masanori Nagao, Takashi Watanabe, Isamu Shindo, Isao TanakaAbstract:Rutile single crystals were grown by the floating zone (FZ) method using a tilting-mirror-type image furnace. The tilting angle (θ) of the mirrors during the growth was changed from 0 to 10 and 20° to examine the effects of θ on crystal quality. The Etch Pit density (EPD) at the center of the crystals was low compared with that at the periphery. The EPDs at the periphery and center of the crystals grown at θ = 0° were (11−16) × 104 and 5 × 104 cm−2, respectively. Both values significantly decreased with an increase in θ. In the crystal grown at θ = 20°, the EPDs at the periphery and center were 7.9 × 104 and 1.5 × 104 cm−2, respectively. In particular, at the center of the crystals, the EPD for θ = 20° was 30% of that for θ = 0°. This result suggests that the quality of rutile crystals can be improved by tilting the focusing mirrors used in crystal growth.
Masanori Nagao - One of the best experts on this subject based on the ideXlab platform.
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effects of the diameter of rutile tio2 single crystals grown using tilting mirror type infrared heating image furnace on solid liquid interface and Etch Pit density
Journal of Crystal Growth, 2011Co-Authors: Md Abdur Razzaque Sarker, Satoshi Watauchi, Masanori Nagao, Takashi Watanabe, Isamu Shindo, Isao TanakaAbstract:Abstract The effects of the diameter of a rutile (TiO 2 ) crystal on interface shape during TiO 2 crystal growth by the floating zone (FZ) method using a tilting-mirror-type image furnace and on the Etch Pit density (EPD) of rutile single crystals were examined. To investigate the diameter effect on the interface shape, the grown crystal diameter was varied from 6 to 11 mm at two different tilting angles ( θ ) of 0° and 20°, respectively. The interface shape was characterized by the convexity ( h/r ) of interface, where h and r represent the height of the interface and the radius of the grown crystals. The h/r of the crystal–melt interface decreased from 0.15 to 0.0 with an increase in the crystal diameter from 6.5 to 11.2 mm at θ =20°, whereas it increased from 0.45 to 0.58 with an increase in the crystal diameter from 6.0 to 11.0 mm at θ =0°. This result suggests that the molten zone becomes stable at θ =20° for the growth of crystals with a larger diameter. To investigate the crystal diameter effect on the EPD, rutile single crystals with diameters of 10, 16 and 19 mm were grown at θ =20°. The EPDs at the center were 1.0−1.4×10 4 cm −2 , which were much smaller than those at the periphery, i.e., 8.0−13.0×10 4 cm −2 , for all the grown crystals with different diameters.
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reduced Etch Pit density of rutile tio2 single crystals by growth using a tilting mirror type infrared heating image furnace
Crystal Growth & Design, 2010Co-Authors: Md Abdur Razzaque Sarker, Satoshi Watauchi, Masanori Nagao, Takashi Watanabe, Isamu Shindo, Isao TanakaAbstract:Rutile single crystals were grown by the floating zone (FZ) method using a tilting-mirror-type image furnace. The tilting angle (θ) of the mirrors during the growth was changed from 0 to 10 and 20° to examine the effects of θ on crystal quality. The Etch Pit density (EPD) at the center of the crystals was low compared with that at the periphery. The EPDs at the periphery and center of the crystals grown at θ = 0° were (11−16) × 104 and 5 × 104 cm−2, respectively. Both values significantly decreased with an increase in θ. In the crystal grown at θ = 20°, the EPDs at the periphery and center were 7.9 × 104 and 1.5 × 104 cm−2, respectively. In particular, at the center of the crystals, the EPD for θ = 20° was 30% of that for θ = 0°. This result suggests that the quality of rutile crystals can be improved by tilting the focusing mirrors used in crystal growth.