The Experts below are selected from a list of 303 Experts worldwide ranked by ideXlab platform
Junsin Yi - One of the best experts on this subject based on the ideXlab platform.
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a novel multicrystalline silicon solar cell using grain boundary etching treatment and transparent conducting oxide
Solar Energy Materials and Solar Cells, 2002Co-Authors: Dongmin Jang, Junsin YiAbstract:Abstract Grain boundary (GB) in multicrystalline silicon (mc-Si) degrades a conversion efficiency of mc-Si solar cell. To reduce the GB effect, we investigated various parameters such as the preferential GB etch, etch time, tin-doped indium-oxide (ITO) electrode, heat treatment, and emitter layer effect. Among various preferential Etchants such as Sirtl, Yang, Secco, and Schimmel, a Schimmel etchant illustrated an excellent preferential etching property. We used RF magnetron sputter grown ITO film as a top contact metal. ITO films served as a top electrode as well as an effective AR coating layer. With well-fabricated mc-Si solar cells, we were able to achieve conversion efficiency as high as 16.6% at the input power of 20 mW/cm2.
Xianhang Li - One of the best experts on this subject based on the ideXlab platform.
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investigation of texturization for monocrystalline silicon solar cells with different kinds of alkaline
Renewable Energy, 2004Co-Authors: Zhenqiang Xi, Deren Yang, Xianhang LiAbstract:In this paper, monocrystalline silicon was textured with different kind of Etchants for solar cells, respectively. It was found that, only with sodium hydroxide (NaOH) or sodium acetate anhydrous (CH3COONa) solution, the textural results were very weak, resulting in high reflectance of silicon surface. However, if using the mixture solution of NaOH and CH3COONa, the reflectance was noticeably decreased. Moreover, the dependence of reflectance on the etching time showed that longer etching time was necessary for texturization in the NaOH+CH3COONa+H2O system. And it was also found that the addition of isopropyl alcohol (IPA) to this mixture solution had a detrimental effect on the texturization. All these results suggested that acetate (CH3COO−) plays a similar role as IPA for alkaline texturization, but they cannot coexist. Finally, the mechanisms of texturization with different kinds of etchant were discussed in detail.
Dongmin Jang - One of the best experts on this subject based on the ideXlab platform.
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a novel multicrystalline silicon solar cell using grain boundary etching treatment and transparent conducting oxide
Solar Energy Materials and Solar Cells, 2002Co-Authors: Dongmin Jang, Junsin YiAbstract:Abstract Grain boundary (GB) in multicrystalline silicon (mc-Si) degrades a conversion efficiency of mc-Si solar cell. To reduce the GB effect, we investigated various parameters such as the preferential GB etch, etch time, tin-doped indium-oxide (ITO) electrode, heat treatment, and emitter layer effect. Among various preferential Etchants such as Sirtl, Yang, Secco, and Schimmel, a Schimmel etchant illustrated an excellent preferential etching property. We used RF magnetron sputter grown ITO film as a top contact metal. ITO films served as a top electrode as well as an effective AR coating layer. With well-fabricated mc-Si solar cells, we were able to achieve conversion efficiency as high as 16.6% at the input power of 20 mW/cm2.
Yi Wang - One of the best experts on this subject based on the ideXlab platform.
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comparative surfacing studies of sputtered and thermal annealed zno films wet etched with nh4cl and acidic Etchants
Surface & Coatings Technology, 2017Co-Authors: Guanqing Wang, Yi WangAbstract:Abstract The wet etchings of as-grown and thermal annealed ZnO films were carried out by using NH 4 Cl and acidic Etchants respectively. The lateral profiles and side faces of the etched ZnO samples were exhibited by profiler and SEM measurements. NH 4 Cl etchant can avoid W-like lateral profile and eave-like slope at the side face of the etched ZnO patterns for both as-grown and post-annealed ZnO samples. The etching rate has been compared between NH 4 Cl etchant and acidic Etchants for both as-grown and post-annealed ZnO samples. NH 4 Cl etchant can maintain slower etching rate with higher NH 4 Cl concentration. The thermal annealing procedure can be helpful to achieving uniform etching surface, and the etching rates of the annealed ZnO samples are even slower, which can be explained by the better crystallinity and lower density of oxygen vacancy.
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Surface uniform wet etching of ZnO films and influence of oxygen annealing on etching properties
2011 6th IEEE International Conference on Nano Micro Engineered and Molecular Systems, 2011Co-Authors: Tao Zhang, Yi WangAbstract:Wet etchings of ZnO films with HCl, H3PO4 and NH4Cl as Etchants were systematically studied. The etching morphology and etching rate were focused on and reported in details. The investigation shows that the NH4Cl aqueous solution can provide uniform etching rate in the entire regions exposed to the etchant, and the etching rate always changes linearly with NH4Cl solution concentrations in a wide range. The etching rate will be stable if a constant concentration is applied. We also took the influence of different annealing conditions on etching properties into accounts. Under a certain annealing condition, the NH4Cl aqueous solution still provides uniform etching properties and controllable etching rates. These properties of NH4Cl aqueous solution as etchant will bring wide design window to real applications. The above results indicate NH4Cl is a promising etchant for ZnO wet etching.
Minjie Wang - One of the best experts on this subject based on the ideXlab platform.
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effects of Etchants in the transfer of chemical vapor deposited graphene
Journal of Applied Physics, 2018Co-Authors: Minjie Wang, Euihyeok Yang, Robert Vajtai, Junichiro Kono, Pulickel M AjayanAbstract:The quality of graphene can be strongly modified during the transfer process following chemical vapor deposition (CVD) growth. Here, we transferred CVD-grown graphene from a copper foil to a SiO2/Si substrate using wet etching with four different Etchants: HNO3, FeCl3, (NH4)2S2O8, and a commercial copper etchant. We then compared the quality of graphene after the transfer process in terms of surface modifications, pollutions (residues and contaminations), and electrical properties (mobility and density). Our tests and analyses showed that the commercial copper etchant provides the best structural integrity, the least amount of residues, and the smallest doping carrier concentration.