The Experts below are selected from a list of 15096 Experts worldwide ranked by ideXlab platform
Alessandro Antonaia - One of the best experts on this subject based on the ideXlab platform.
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enhanced electrical stability of lp mocvd deposited zno b layers by means of plasma Etching Treatment
Journal of Physical Chemistry C, 2013Co-Authors: M L Addonizio, Alessandro AntonaiaAbstract:Electrical properties of transparent conductive ZnO:B films, obtained by the low-pressure metal organic chemical vapor deposition (LP-MOCVD) technique, were monitored during the given time, and a heavy worsening of these properties was observed. At the same time, other ZnO:B samples subjected to a post-deposition Treatment by argon plasma Etching showed an appreciable enhancement of the electrical stability in the given time. A degradation mechanism, involving formation of O– adsorbate and its diffusion inside the grain boundary, is proposed as responsible of the carrier mobility worsening. Furthermore, the beneficial effect of the plasma Treatment is explained in terms of a rearrangement of the grain boundary with a decrease of positively charged defect density and, consequently, a slowing down of O– formation rate. Finally, argon plasma post-deposition Treatment is proposed as an effective process for obtaining ZnO:B films with an appreciable electrical stability in the given time.
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surface morphology and light scattering properties of plasma etched zno b films grown by lp mocvd for silicon thin film solar cells
Thin Solid Films, 2009Co-Authors: M L Addonizio, Alessandro AntonaiaAbstract:Abstract LP-MOCVD deposited ZnO:B thin films, post-etched by argon plasma processes, were investigated in this study in order to optimise the ZnO:B/p-layer interface when the ZnO:B is used as front electrode of p–i–n a-Si:H solar cells. At varying Etching time different surface roughness was obtained and the evolution of the surface morphology was correlated with the texture characteristic and its scattering properties. Atomic force microscopy data were analysed and discussed together with the scattering properties, which are haze parameter and angular resolved scattering (ARS) distribution. The presence of several preferential scattering angles was hypothesized and a deconvolution approach was applied to each angular scattering curve. For each fixed preferential scattering angle θ i we associated a Gaussian distribution of the scattered light amount related to a well-defined scattering surface. The different preferential scattering angles were correlated to different scattering phenomena, the modifications of the angular scattering curves well agreed with SEM and AFM images. It is well known that a:Si–H solar cells fabricated on MOCVD deposited ZnO:B substrates show poor FF and V oc values with good J sc value. We demonstrated that only an effective sharp edge rounding off produced by an appropriately long plasma Etching Treatment is able to make MOCVD deposited ZnO:B perfectly suitable for high quality a-Si:H based devices.
Byungyou Hong - One of the best experts on this subject based on the ideXlab platform.
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effect of h2 and o2 plasma Etching Treatment on the surface of diamond like carbon thin film
Applied Surface Science, 2008Co-Authors: Deok Yong Yun, Won Seok Choi, Yong Seob Park, Byungyou HongAbstract:Abstract In this study, we investigated the surface properties of diamond-like carbon (DLC) films for biomedical applications through plasma Etching Treatment using oxygen (O 2 ) and hydrogen (H 2 ) gas. The synthesis and post-plasma Etching Treatment of DLC films were carried out by 13.56 MHz RF plasma enhanced chemical vapor deposition (PECVD) system. In order to characterize the surface of DLC films, they were etched to a thickness of approximately 100 nm and were compared with an as-deposited DLC film. We obtained the optimum condition through power variation, at which the Etching rate by H 2 and O 2 was 30 and 80 nm/min, respectively. The structural and chemical properties of these thin films after the plasma Etching Treatment were evaluated by Raman and Fourier transform infrared (FT-IR) spectroscopy. In the case of as-deposited and H 2 plasma Etching-treated DLC film, the contact angle was 86.4° and 83.7°, respectively, whereas it was reduced to 35.5° in the Etching-treated DLC film in O 2 plasma. The surface roughness of plasma Etching-treated DLC with H 2 or O 2 was maintained smooth at 0.1 nm. These results indicated that the surface of the Etching-treated DLC film in O 2 plasma was hydrophilic as well as smooth.
Peng Rao - One of the best experts on this subject based on the ideXlab platform.
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surface plasma Etching Treatment of cobalt nanoparticles embedded honeysuckle like nitrogen doped carbon nanotubes to produce high performance catalysts for rechargeable zinc air batteries
Journal of Power Sources, 2020Co-Authors: Peng Rao, Peng Cui, Li Yang, Maosen Wang, Shun Wang, Hao Cai, Yun Wang, Xinsheng Zhao, David P WilkinsonAbstract:Abstract Developing high-performance and low-cost catalysts for oxygen reduction reaction (ORR) in metal-air batteries is challenging but necessary for their practical applications and commercialization. In this paper, a core-shell cobalt nanoparticles-embedded honeysuckle-like N-doped carbon nanotube (Co@NCNT) catalyst is synthesized through programmed carbonization with the plasma Etching. The Co@NCNT displays a uniform core-shell honeysuckle-like nanostructure and exhibits comparable ORR performance to the commercial 20% Pt/C. The onset potential (Eonset) and half-wave potential (E1/2) of the Co@NCNT is 1.030 V and 0.872 V (vs. RHE), and the potential decay in E1/2 is only 9 mV after 5000 cycles accelerated durability test (ADT). Moreover, a Zinc-air battery (ZAB) with Co@NCNT cathode catalyst exhibits a peak power density of 162.5 mW cm−2 and high rate capability as well as excellent durability. The excellent performance of the Co@NCNT is mainly attributed to the synergistic effect of unique core-shell nanostructure, more defects and active sites as well as more tiny rifts in the carbon-shell induced by the plasma Etching.
M L Addonizio - One of the best experts on this subject based on the ideXlab platform.
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enhanced electrical stability of lp mocvd deposited zno b layers by means of plasma Etching Treatment
Journal of Physical Chemistry C, 2013Co-Authors: M L Addonizio, Alessandro AntonaiaAbstract:Electrical properties of transparent conductive ZnO:B films, obtained by the low-pressure metal organic chemical vapor deposition (LP-MOCVD) technique, were monitored during the given time, and a heavy worsening of these properties was observed. At the same time, other ZnO:B samples subjected to a post-deposition Treatment by argon plasma Etching showed an appreciable enhancement of the electrical stability in the given time. A degradation mechanism, involving formation of O– adsorbate and its diffusion inside the grain boundary, is proposed as responsible of the carrier mobility worsening. Furthermore, the beneficial effect of the plasma Treatment is explained in terms of a rearrangement of the grain boundary with a decrease of positively charged defect density and, consequently, a slowing down of O– formation rate. Finally, argon plasma post-deposition Treatment is proposed as an effective process for obtaining ZnO:B films with an appreciable electrical stability in the given time.
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surface morphology and light scattering properties of plasma etched zno b films grown by lp mocvd for silicon thin film solar cells
Thin Solid Films, 2009Co-Authors: M L Addonizio, Alessandro AntonaiaAbstract:Abstract LP-MOCVD deposited ZnO:B thin films, post-etched by argon plasma processes, were investigated in this study in order to optimise the ZnO:B/p-layer interface when the ZnO:B is used as front electrode of p–i–n a-Si:H solar cells. At varying Etching time different surface roughness was obtained and the evolution of the surface morphology was correlated with the texture characteristic and its scattering properties. Atomic force microscopy data were analysed and discussed together with the scattering properties, which are haze parameter and angular resolved scattering (ARS) distribution. The presence of several preferential scattering angles was hypothesized and a deconvolution approach was applied to each angular scattering curve. For each fixed preferential scattering angle θ i we associated a Gaussian distribution of the scattered light amount related to a well-defined scattering surface. The different preferential scattering angles were correlated to different scattering phenomena, the modifications of the angular scattering curves well agreed with SEM and AFM images. It is well known that a:Si–H solar cells fabricated on MOCVD deposited ZnO:B substrates show poor FF and V oc values with good J sc value. We demonstrated that only an effective sharp edge rounding off produced by an appropriately long plasma Etching Treatment is able to make MOCVD deposited ZnO:B perfectly suitable for high quality a-Si:H based devices.
L G Bulusheva - One of the best experts on this subject based on the ideXlab platform.
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electrochemical performance of arc produced carbon nanotubes as anode material for lithium ion batteries
Electrochimica Acta, 2007Co-Authors: Shubin Yang, Huaihe Song, Xiaohong Chen, A V Okotrub, L G BulushevaAbstract:Abstract The effects of Etching process on the morphology, structure and electrochemical performance of arc-produced multiwalled carbon nanotubes (CNTs) as anode material for lithium-ion batteries were systematically investigated by TEM and a variety of electrochemical testing techniques. It was found that the etched CNTs exhibited four times higher reversible capacity than that of raw CNTs, and possessed excellent cyclability with almost 100% capacity retention after 30 cycles. The kinetic properties of three kinds of CNTs electrodes involving the pristine (CNTs-1), etched (CNTs-2) as well as etch-carbonized samples (CNTs-3) were characterized via ac impedance measurement. It was indicated that, after 30 cycles the exchange current density i 0 of etched CNTs ((7.6–7.8) × 10 −3 A cm −2 ) was higher than that of the raw CNTs (5.9 × 10 −3 A cm −2 ), suggesting the electrochemical activity of CNTs was enhanced by the Etching Treatment. The storage characteristics of the CNTs electrodes at room temperature and 50 °C were particularly compared. It was found that the film resistance on CNTs electrode generally tended to become large with the elongation of storage time, especially storage at high temperature. In comparison with CNTs-1 and CNTs-3, CNTs-2 exhibited more distinctly increase of film resistance, which is related with the surface properties.