The Experts below are selected from a list of 249 Experts worldwide ranked by ideXlab platform
Y.d. Zheng - One of the best experts on this subject based on the ideXlab platform.
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A thermodynamic model and estimation of the Experimental Value of spontaneous polarization in a wurtzite GaN
Applied Physics Letters, 2009Co-Authors: Wensheng Yan, Zhang Rong, Xiangqian Xiu, Zili Xie, Peigao Han, Y. Shi, Peng Chen, Y.d. ZhengAbstract:Determining the spontaneous polarization is a fundamental problem in the III-nitride field. However the Experimental Value of the spontaneous polarization has not yet been reported. In this study, a thermodynamic model is proposed to investigate the spontaneous polarization of GaN from the GaN high-pressure phase transition. Total macroscopic polarization is directly expressed as coefficients in expansion, and these coefficients are found to be conducted in experiments. The Experimental Value of the spontaneous polarization of GaN is estimated to be around −0.022 C/m2.
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Phenomenological model for the spontaneous polarization of GaN
Applied Physics Letters, 2007Co-Authors: Wensheng Yan, Zhang Rong, Xiangqian Xiu, Zili Xie, Peigao Han, R. L. Jiang, Y. Shi, Y.d. ZhengAbstract:A phenomenological model is presented to determine the Experimental Value of the spontaneous polarization of GaN. The expression of the spontaneous polarization at room temperature is obtained. The electrostrictive coefficient M33 of a wurtzite GaN film is used to evaluate the Experimental Value of the spontaneous polarization of GaN. The exact Experimental Value of the spontaneous polarization of GaN can be obtained as long as the electrostrictive coefficient M33 of the single crystal zinc blende GaN film is measured. The phenomenological model can also be used to determine the Experimental Values of the spontaneous polarization in other III-V nitrides, AlN and InN.
Wensheng Yan - One of the best experts on this subject based on the ideXlab platform.
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A thermodynamic model and estimation of the Experimental Value of spontaneous polarization in a wurtzite GaN
Applied Physics Letters, 2009Co-Authors: Wensheng Yan, Zhang Rong, Xiangqian Xiu, Zili Xie, Peigao Han, Y. Shi, Peng Chen, Y.d. ZhengAbstract:Determining the spontaneous polarization is a fundamental problem in the III-nitride field. However the Experimental Value of the spontaneous polarization has not yet been reported. In this study, a thermodynamic model is proposed to investigate the spontaneous polarization of GaN from the GaN high-pressure phase transition. Total macroscopic polarization is directly expressed as coefficients in expansion, and these coefficients are found to be conducted in experiments. The Experimental Value of the spontaneous polarization of GaN is estimated to be around −0.022 C/m2.
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Phenomenological model for the spontaneous polarization of GaN
Applied Physics Letters, 2007Co-Authors: Wensheng Yan, Zhang Rong, Xiangqian Xiu, Zili Xie, Peigao Han, R. L. Jiang, Y. Shi, Y.d. ZhengAbstract:A phenomenological model is presented to determine the Experimental Value of the spontaneous polarization of GaN. The expression of the spontaneous polarization at room temperature is obtained. The electrostrictive coefficient M33 of a wurtzite GaN film is used to evaluate the Experimental Value of the spontaneous polarization of GaN. The exact Experimental Value of the spontaneous polarization of GaN can be obtained as long as the electrostrictive coefficient M33 of the single crystal zinc blende GaN film is measured. The phenomenological model can also be used to determine the Experimental Values of the spontaneous polarization in other III-V nitrides, AlN and InN.
Zhang Rong - One of the best experts on this subject based on the ideXlab platform.
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A thermodynamic model and estimation of the Experimental Value of spontaneous polarization in a wurtzite GaN
Applied Physics Letters, 2009Co-Authors: Wensheng Yan, Zhang Rong, Xiangqian Xiu, Zili Xie, Peigao Han, Y. Shi, Peng Chen, Y.d. ZhengAbstract:Determining the spontaneous polarization is a fundamental problem in the III-nitride field. However the Experimental Value of the spontaneous polarization has not yet been reported. In this study, a thermodynamic model is proposed to investigate the spontaneous polarization of GaN from the GaN high-pressure phase transition. Total macroscopic polarization is directly expressed as coefficients in expansion, and these coefficients are found to be conducted in experiments. The Experimental Value of the spontaneous polarization of GaN is estimated to be around −0.022 C/m2.
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Phenomenological model for the spontaneous polarization of GaN
Applied Physics Letters, 2007Co-Authors: Wensheng Yan, Zhang Rong, Xiangqian Xiu, Zili Xie, Peigao Han, R. L. Jiang, Y. Shi, Y.d. ZhengAbstract:A phenomenological model is presented to determine the Experimental Value of the spontaneous polarization of GaN. The expression of the spontaneous polarization at room temperature is obtained. The electrostrictive coefficient M33 of a wurtzite GaN film is used to evaluate the Experimental Value of the spontaneous polarization of GaN. The exact Experimental Value of the spontaneous polarization of GaN can be obtained as long as the electrostrictive coefficient M33 of the single crystal zinc blende GaN film is measured. The phenomenological model can also be used to determine the Experimental Values of the spontaneous polarization in other III-V nitrides, AlN and InN.
Zili Xie - One of the best experts on this subject based on the ideXlab platform.
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A thermodynamic model and estimation of the Experimental Value of spontaneous polarization in a wurtzite GaN
Applied Physics Letters, 2009Co-Authors: Wensheng Yan, Zhang Rong, Xiangqian Xiu, Zili Xie, Peigao Han, Y. Shi, Peng Chen, Y.d. ZhengAbstract:Determining the spontaneous polarization is a fundamental problem in the III-nitride field. However the Experimental Value of the spontaneous polarization has not yet been reported. In this study, a thermodynamic model is proposed to investigate the spontaneous polarization of GaN from the GaN high-pressure phase transition. Total macroscopic polarization is directly expressed as coefficients in expansion, and these coefficients are found to be conducted in experiments. The Experimental Value of the spontaneous polarization of GaN is estimated to be around −0.022 C/m2.
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Phenomenological model for the spontaneous polarization of GaN
Applied Physics Letters, 2007Co-Authors: Wensheng Yan, Zhang Rong, Xiangqian Xiu, Zili Xie, Peigao Han, R. L. Jiang, Y. Shi, Y.d. ZhengAbstract:A phenomenological model is presented to determine the Experimental Value of the spontaneous polarization of GaN. The expression of the spontaneous polarization at room temperature is obtained. The electrostrictive coefficient M33 of a wurtzite GaN film is used to evaluate the Experimental Value of the spontaneous polarization of GaN. The exact Experimental Value of the spontaneous polarization of GaN can be obtained as long as the electrostrictive coefficient M33 of the single crystal zinc blende GaN film is measured. The phenomenological model can also be used to determine the Experimental Values of the spontaneous polarization in other III-V nitrides, AlN and InN.
Peigao Han - One of the best experts on this subject based on the ideXlab platform.
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A thermodynamic model and estimation of the Experimental Value of spontaneous polarization in a wurtzite GaN
Applied Physics Letters, 2009Co-Authors: Wensheng Yan, Zhang Rong, Xiangqian Xiu, Zili Xie, Peigao Han, Y. Shi, Peng Chen, Y.d. ZhengAbstract:Determining the spontaneous polarization is a fundamental problem in the III-nitride field. However the Experimental Value of the spontaneous polarization has not yet been reported. In this study, a thermodynamic model is proposed to investigate the spontaneous polarization of GaN from the GaN high-pressure phase transition. Total macroscopic polarization is directly expressed as coefficients in expansion, and these coefficients are found to be conducted in experiments. The Experimental Value of the spontaneous polarization of GaN is estimated to be around −0.022 C/m2.
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Phenomenological model for the spontaneous polarization of GaN
Applied Physics Letters, 2007Co-Authors: Wensheng Yan, Zhang Rong, Xiangqian Xiu, Zili Xie, Peigao Han, R. L. Jiang, Y. Shi, Y.d. ZhengAbstract:A phenomenological model is presented to determine the Experimental Value of the spontaneous polarization of GaN. The expression of the spontaneous polarization at room temperature is obtained. The electrostrictive coefficient M33 of a wurtzite GaN film is used to evaluate the Experimental Value of the spontaneous polarization of GaN. The exact Experimental Value of the spontaneous polarization of GaN can be obtained as long as the electrostrictive coefficient M33 of the single crystal zinc blende GaN film is measured. The phenomenological model can also be used to determine the Experimental Values of the spontaneous polarization in other III-V nitrides, AlN and InN.
