The Experts below are selected from a list of 369681 Experts worldwide ranked by ideXlab platform
Davide Betto - One of the best experts on this subject based on the ideXlab platform.
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spin orbit torque switching without an External Field using interlayer exchange coupling
Nature Nanotechnology, 2016Co-Authors: Davide Betto, K Rode, J M D Coey, Plamen StamenovAbstract:A new approach to magnetic switching by spin–orbit torque uses interlayer exchange coupling to overcome the need for an External magnetic Field.
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spin orbit torque switching without an External Field using interlayer exchange coupling
Nature Nanotechnology, 2016Co-Authors: Yongchang Lau, Davide Betto, K Rode, J M D Coey, Plamen StamenovAbstract:A new approach to magnetic switching by spin–orbit torque uses interlayer exchange coupling to overcome the need for an External magnetic Field. Manipulation of the magnetization of a perpendicular ferromagnetic free layer by spin–orbit torque (SOT)1,2,3,4 is an attractive alternative to spin-transfer torque (STT) in oscillators and switches such as magnetic random-access memory (MRAM) where a high current is passed across an ultrathin tunnel barrier5. A small symmetry-breaking bias Field is usually needed for deterministic SOT switching but it is impractical to generate the Field Externally for spintronic applications. Here, we demonstrate robust zero-Field SOT switching of a perpendicular CoFe free layer where the symmetry is broken by magnetic coupling to a second in-plane exchange-biased CoFe layer via a nonmagnetic Ru or Pt spacer6. The preferred magnetic state of the free layer is determined by the current polarity and the sign of the interlayer exchange coupling (IEC). Our strategy offers a potentially scalable solution to realize bias-Field-free switching that can lead to a generation of SOT devices, combining a high storage density and endurance with a low power consumption.
Plamen Stamenov - One of the best experts on this subject based on the ideXlab platform.
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spin orbit torque switching without an External Field using interlayer exchange coupling
Nature Nanotechnology, 2016Co-Authors: Davide Betto, K Rode, J M D Coey, Plamen StamenovAbstract:A new approach to magnetic switching by spin–orbit torque uses interlayer exchange coupling to overcome the need for an External magnetic Field.
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spin orbit torque switching without an External Field using interlayer exchange coupling
Nature Nanotechnology, 2016Co-Authors: Yongchang Lau, Davide Betto, K Rode, J M D Coey, Plamen StamenovAbstract:A new approach to magnetic switching by spin–orbit torque uses interlayer exchange coupling to overcome the need for an External magnetic Field. Manipulation of the magnetization of a perpendicular ferromagnetic free layer by spin–orbit torque (SOT)1,2,3,4 is an attractive alternative to spin-transfer torque (STT) in oscillators and switches such as magnetic random-access memory (MRAM) where a high current is passed across an ultrathin tunnel barrier5. A small symmetry-breaking bias Field is usually needed for deterministic SOT switching but it is impractical to generate the Field Externally for spintronic applications. Here, we demonstrate robust zero-Field SOT switching of a perpendicular CoFe free layer where the symmetry is broken by magnetic coupling to a second in-plane exchange-biased CoFe layer via a nonmagnetic Ru or Pt spacer6. The preferred magnetic state of the free layer is determined by the current polarity and the sign of the interlayer exchange coupling (IEC). Our strategy offers a potentially scalable solution to realize bias-Field-free switching that can lead to a generation of SOT devices, combining a high storage density and endurance with a low power consumption.
Weikuo Chen - One of the best experts on this subject based on the ideXlab platform.
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parisi formula disorder chaos and fluctuation for the ground state energy in the spherical mixed p spin models
Communications in Mathematical Physics, 2017Co-Authors: Weikuo Chen, Arnab SenAbstract:We show that the limiting ground state energy of the spherical mixed p-spin model can be identified as the infimum of certain variational problem. This complements the well-known Parisi formula for the limiting free energy in the spherical model. As an application, we obtain explicit formulas for the limiting ground state energy in the replica symmetry, one level of replica symmetry breaking and full replica symmetry breaking phases at zero temperature. In addition, our approach leads to new results on disorder chaos in spherical mixed even p-spin models. In particular, we prove that when there is no External Field, the location of the ground state energy is chaotic under small perturbations of the disorder. We also establish that in the spherical mixed even p-spin model, the ground state energy superconcentrates in the absence of External Field, while it obeys a central limit theorem if the External Field is present.
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on the energy landscape of the mixed even p spin model
arXiv: Probability, 2016Co-Authors: Weikuo Chen, Madeline Handschy, Gilad LermanAbstract:We investigate the energy landscape of the mixed even $p$-spin model with Ising spin configurations. We show that for any given energy level between zero and the maximal energy, with overwhelming probability there exist exponentially many distinct spin configurations such that their energies stay near this energy level. Furthermore, their magnetizations and overlaps are concentrated around some fixed constants. In particular, at the level of maximal energy, we prove that the Hamiltonian exhibits exponentially many orthogonal peaks. This improves the results of Chatterjee and Ding-Eldan-Zhai, where the former established a logarithmic size of the number of the orthogonal peaks, while the latter proved a polynomial size. Our second main result obtains disorder chaos at zero temperature and at any External Field. As a byproduct, this implies that the fluctuation of the maximal energy is superconcentrated when the External Field vanishes and obeys a Gaussian limit law when the External Field is present.
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disorder chaos in the sherrington kirkpatrick model with External Field
Annals of Probability, 2013Co-Authors: Weikuo ChenAbstract:We consider a spin system obtained by coupling two distinct Sherrington–Kirkpatrick (SK) models with the same temperature and External Field whose Hamiltonians are correlated. The disorder chaos conjecture for the SK model states that the overlap under the corresponding Gibbs measure is essentially concentrated at a single value. In the absence of External Field, this statement was first confirmed by Chatterjee [Disorder chaos and multiple valleys in spin glasses (2009) Preprint]. In the present paper, using Guerra’s replica symmetry breaking bound, we prove that the SK model is also chaotic in the presence of the External Field and the position of the overlap is determined by an equation related to Guerra’s bound and the Parisi measure.
K Rode - One of the best experts on this subject based on the ideXlab platform.
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spin orbit torque switching without an External Field using interlayer exchange coupling
Nature Nanotechnology, 2016Co-Authors: Davide Betto, K Rode, J M D Coey, Plamen StamenovAbstract:A new approach to magnetic switching by spin–orbit torque uses interlayer exchange coupling to overcome the need for an External magnetic Field.
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spin orbit torque switching without an External Field using interlayer exchange coupling
Nature Nanotechnology, 2016Co-Authors: Yongchang Lau, Davide Betto, K Rode, J M D Coey, Plamen StamenovAbstract:A new approach to magnetic switching by spin–orbit torque uses interlayer exchange coupling to overcome the need for an External magnetic Field. Manipulation of the magnetization of a perpendicular ferromagnetic free layer by spin–orbit torque (SOT)1,2,3,4 is an attractive alternative to spin-transfer torque (STT) in oscillators and switches such as magnetic random-access memory (MRAM) where a high current is passed across an ultrathin tunnel barrier5. A small symmetry-breaking bias Field is usually needed for deterministic SOT switching but it is impractical to generate the Field Externally for spintronic applications. Here, we demonstrate robust zero-Field SOT switching of a perpendicular CoFe free layer where the symmetry is broken by magnetic coupling to a second in-plane exchange-biased CoFe layer via a nonmagnetic Ru or Pt spacer6. The preferred magnetic state of the free layer is determined by the current polarity and the sign of the interlayer exchange coupling (IEC). Our strategy offers a potentially scalable solution to realize bias-Field-free switching that can lead to a generation of SOT devices, combining a high storage density and endurance with a low power consumption.
J M D Coey - One of the best experts on this subject based on the ideXlab platform.
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spin orbit torque switching without an External Field using interlayer exchange coupling
Nature Nanotechnology, 2016Co-Authors: Davide Betto, K Rode, J M D Coey, Plamen StamenovAbstract:A new approach to magnetic switching by spin–orbit torque uses interlayer exchange coupling to overcome the need for an External magnetic Field.
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spin orbit torque switching without an External Field using interlayer exchange coupling
Nature Nanotechnology, 2016Co-Authors: Yongchang Lau, Davide Betto, K Rode, J M D Coey, Plamen StamenovAbstract:A new approach to magnetic switching by spin–orbit torque uses interlayer exchange coupling to overcome the need for an External magnetic Field. Manipulation of the magnetization of a perpendicular ferromagnetic free layer by spin–orbit torque (SOT)1,2,3,4 is an attractive alternative to spin-transfer torque (STT) in oscillators and switches such as magnetic random-access memory (MRAM) where a high current is passed across an ultrathin tunnel barrier5. A small symmetry-breaking bias Field is usually needed for deterministic SOT switching but it is impractical to generate the Field Externally for spintronic applications. Here, we demonstrate robust zero-Field SOT switching of a perpendicular CoFe free layer where the symmetry is broken by magnetic coupling to a second in-plane exchange-biased CoFe layer via a nonmagnetic Ru or Pt spacer6. The preferred magnetic state of the free layer is determined by the current polarity and the sign of the interlayer exchange coupling (IEC). Our strategy offers a potentially scalable solution to realize bias-Field-free switching that can lead to a generation of SOT devices, combining a high storage density and endurance with a low power consumption.
