The Experts below are selected from a list of 27240 Experts worldwide ranked by ideXlab platform
P Wachulak - One of the best experts on this subject based on the ideXlab platform.
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flash Extreme Ultraviolet holographic microscopy in a table top setup
Proceedings of SPIE, 2014Co-Authors: Nils Monserud, Weilun Chao, Erik H. Anderson, P Wachulak, Erik B Malm, Ganesh Balakrishnan, M C MarconiAbstract:We present a single-shot Fourier transform holography setup with ~100nm spatial resolution and 1 ns temporal resolution using a tabletop Extreme Ultraviolet (EUV) laser. Flash images allowed for the imaging of nano-pillars oscillating at MHz frequencies that will enable the evaluation of mechanical properties of nanoscale mechanical oscillators.
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Extreme Ultraviolet lithography with table top lasers
Progress in Quantum Electronics, 2010Co-Authors: M C Marconi, P WachulakAbstract:Abstract Compact Extreme Ultraviolet (EUV) lasers with “table top” footprints which can be easily installed in a small laboratory environment, had enabled in the last years applications that so far had been restricted to large synchrotron facilities. The high brightness and degree of coherence of these laser sources make them a good alternative for applications where a coherent illumination is required. One of these applications is nano-photolithography realized by interferometric or “holographic” lithography. This paper describes the advances and capabilities of compact photolithographic systems based on “table top” EUV lasers.
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new opportunities in interferometric lithography using Extreme Ultraviolet tabletop lasers
Journal of Micro-nanolithography Mems and Moems, 2009Co-Authors: P Wachulak, Carmen S. Menoni, Jorge J. Rocca, Erik H. Anderson, L Urbanski, M G Capeluto, David Hill, Willie S Rockward, Claudio Iemmi, M C MarconiAbstract:The development of tabletop Extreme Ultraviolet EUV lasers opens now the possibility to realize interferometric lithography systems at EUV wavelengths that easily fit on the top of an optical table. The high degree of spatial and temporal coherence and high brightness of the compact EUV laser sources make them a good option for interferometric applications. The combination of these novel sources with interferometric lithography setups brings to the laboratory environment capabilities that so far had been restricted exclusively to large synchrotron facilities. © 2009 Society of Photo-Optical Instrumentation Engineers. DOI: 10.1117/1.3129837 Subject terms: nanopatterning; interferometric lithography; Extreme Ultraviolet EUV lasers.
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microscopy of Extreme Ultraviolet lithography masks with 13 2 nm tabletop laser illumination
Optics Letters, 2009Co-Authors: Fernando Brizuela, Patrick P Naulleau, C. Brewer, Kenneth A Goldberg, Y Wang, Francesco Pedaci, W Chao, E H Anderson, Yanwei Liu, P WachulakAbstract:We report the demonstration of a reflection microscope that operates at 13.2 nm wavelength with a spatial resolution of 55+/-3 nm. The microscope uses illumination from a tabletop Extreme Ultraviolet laser to acquire aerial images of photolithography masks with a 20 s exposure time. The modulation transfer function of the optical system was characterized.
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patterning of nano scale arrays by table top Extreme Ultraviolet laser interferometric lithography
Optics Express, 2007Co-Authors: P Wachulak, M C Marconi, Carmen S. Menoni, M G Capeluto, J J RoccaAbstract:Arrays of nanodots were directly patterned by interferometric lithography using a bright table-top 46.9 nm laser. Multiple exposures with a Lloyd’s mirror interferometer allowed to print arrays of 60 nm FWHM features. This laser-based Extreme Ultraviolet interferometric technique makes possible to print different nanoscale patterns using a compact table-top set up.
K S E Eikema - One of the best experts on this subject based on the ideXlab platform.
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Extreme Ultraviolet frequency comb metrology
Physical Review Letters, 2010Co-Authors: D Z Kandula, Christoph Gohle, T J Pinkert, W Ubachs, K S E EikemaAbstract:The remarkable precision of frequency-comb (FC) lasers is transferred to the Extreme Ultraviolet (XUV, wavelengths shorter than 100nm), a frequency region previously not accessible to these devices. A frequency comb at XUV wavelengths near 51nm is generated by amplification and coherent up-conversion of a pair of pulses originating from a near-infrared femtosecond FC laser. The phase coherence of the source in the XUV is demonstrated using helium atoms as a ruler and phase detector. Signals in the form of stable Ramsey-like fringes with high contrast are observed when the FC laser is scanned over P states of helium, from which the absolute transition frequency in the XUV can be extracted. This procedure yields a He4 ionization energy at h× 5945204212(6)MHz, improved by nearly an order of magnitude in accuracy, thus challenging QED calculations of this two-electron system. © 2010 The American Physical Society.
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Extreme Ultraviolet frequency comb metrology
Physical Review Letters, 2010Co-Authors: D Z Kandula, Christoph Gohle, T J Pinkert, W Ubachs, K S E EikemaAbstract:The remarkable precision of frequency-comb (FC) lasers is transferred to the Extreme Ultraviolet (XUV, wavelengths shorter than 100 nm), a frequency region previously not accessible to these devices. A frequency comb at XUV wavelengths near 51 nm is generated by amplification and coherent up-conversion of a pair of pulses originating from a near-infrared femtosecond FC laser. The phase coherence of the source in the XUV is demonstrated using helium atoms as a ruler and phase detector. Signals in the form of stable Ramsey-like fringes with high contrast are observed when the FC laser is scanned over $P$ states of helium, from which the absolute transition frequency in the XUV can be extracted. This procedure yields a $^{4}\mathrm{He}$ ionization energy at $h\ifmmode\times\else\texttimes\fi{}5\text{ }945\text{ }204\text{ }212(6)\text{ }\text{ }\mathrm{MHz}$, improved by nearly an order of magnitude in accuracy, thus challenging QED calculations of this two-electron system.
Peter Hannaford - One of the best experts on this subject based on the ideXlab platform.
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wave mixing with high order harmonics in Extreme Ultraviolet region
Applied Physics Letters, 2015Co-Authors: Lap Van Dao, Khuong Ba Dinh, Naylyn Gaffney, Peter HannafordAbstract:We report studies of the wave-mixing process in the Extreme Ultraviolet region with two near-infrared driving and controlling pulses with incommensurate frequencies (at 1400 nm and 800 nm). A non-collinear scheme for the two beams is used in order to spatially separate and to characterise the properties of the high-order wave-mixing field. We show that the Extreme Ultraviolet frequency mixing can be treated by perturbative, very high-order nonlinear optics; the modification of the wave-packet of the free electron needs to be considered in this process.
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generation of high flux highly coherent Extreme Ultraviolet radiation in a gas cell
Journal of Applied Physics, 2008Co-Authors: Lap Van Dao, Sven Teichmann, Jeffrey A Davis, Peter HannafordAbstract:We report the generation of Extreme Ultraviolet radiation with high photon flux (1010–1012 photon/cm2 s), high spatial coherence (up to 0.95), and good spatial beam profile by high-order harmonic generation in various noble gases (argon, neon, and helium) in a gas cell. The photon flux was determined using an Extreme Ultraviolet spectrometer equipped with a charge-coupled device camera and the spatial coherence was determined from Young double-slit interference fringes. The high-order harmonic emission is confined to just a few orders because of the small phase mismatch in the cut-off region that allows macroscopic phase matching to be satisfied for just a few harmonics in this region. The efficiency and spatial beam profile are studied as a function of gas pressure and geometrical configuration.
D Z Kandula - One of the best experts on this subject based on the ideXlab platform.
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Extreme Ultraviolet frequency comb metrology
Physical Review Letters, 2010Co-Authors: D Z Kandula, Christoph Gohle, T J Pinkert, W Ubachs, K S E EikemaAbstract:The remarkable precision of frequency-comb (FC) lasers is transferred to the Extreme Ultraviolet (XUV, wavelengths shorter than 100nm), a frequency region previously not accessible to these devices. A frequency comb at XUV wavelengths near 51nm is generated by amplification and coherent up-conversion of a pair of pulses originating from a near-infrared femtosecond FC laser. The phase coherence of the source in the XUV is demonstrated using helium atoms as a ruler and phase detector. Signals in the form of stable Ramsey-like fringes with high contrast are observed when the FC laser is scanned over P states of helium, from which the absolute transition frequency in the XUV can be extracted. This procedure yields a He4 ionization energy at h× 5945204212(6)MHz, improved by nearly an order of magnitude in accuracy, thus challenging QED calculations of this two-electron system. © 2010 The American Physical Society.
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Extreme Ultraviolet frequency comb metrology
Physical Review Letters, 2010Co-Authors: D Z Kandula, Christoph Gohle, T J Pinkert, W Ubachs, K S E EikemaAbstract:The remarkable precision of frequency-comb (FC) lasers is transferred to the Extreme Ultraviolet (XUV, wavelengths shorter than 100 nm), a frequency region previously not accessible to these devices. A frequency comb at XUV wavelengths near 51 nm is generated by amplification and coherent up-conversion of a pair of pulses originating from a near-infrared femtosecond FC laser. The phase coherence of the source in the XUV is demonstrated using helium atoms as a ruler and phase detector. Signals in the form of stable Ramsey-like fringes with high contrast are observed when the FC laser is scanned over $P$ states of helium, from which the absolute transition frequency in the XUV can be extracted. This procedure yields a $^{4}\mathrm{He}$ ionization energy at $h\ifmmode\times\else\texttimes\fi{}5\text{ }945\text{ }204\text{ }212(6)\text{ }\text{ }\mathrm{MHz}$, improved by nearly an order of magnitude in accuracy, thus challenging QED calculations of this two-electron system.
U Kleineberg - One of the best experts on this subject based on the ideXlab platform.
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three dimensional characterization of Extreme Ultraviolet mask blank defects by interference contrast photoemission electron microscopy
Optics Express, 2008Co-Authors: Jingquan Lin, N Weber, M Escher, J Maul, Hakseung Han, M Merkel, Stefan Wurm, G Schonhense, U KleinebergAbstract:A photoemission electron microscope based on a new contrast mechanism “interference contrast” is applied to characterize Extreme Ultraviolet lithography mask blank defects. Inspection results show that positioning of interference destructive condition (node of standing wave field) on surface of multilayer in the local region of a phase defect is necessary to obtain best visibility of the defect on mask blank. A comparative experiment reveals superiority of the interference contrast photoemission electron microscope (Extreme UV illumination) over a topographic contrast one (UV illumination with Hg discharge lamp) in detecting Extreme Ultraviolet mask blank phase defects. A depth-resolved detection of a mask blank defect, either by measuring anti-node peak shift in the EUV-PEEM image under varying inspection wavelength condition or by counting interference fringes with a fixed illumination wavelength, is discussed.
