The Experts below are selected from a list of 294 Experts worldwide ranked by ideXlab platform
Zeinab Rashidian - One of the best experts on this subject based on the ideXlab platform.
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valley polarized current and Fano Factor in a ferromagnetic normal ferromagnetic silicene superlattice junction
Journal of Magnetism and Magnetic Materials, 2017Co-Authors: Zeinab Rashidian, Zeinab Lorestaniweiss, Yaser Hajati, S. Rezaeipour, Gholamreza RashediAbstract:Abstract In this paper, based on the transfer-matrix method, we investigate the transport properties of Dirac fermions through a superlattice of ferromagnetic/normal/ferromagnetic (FNF) buckled silicene junction where an electrostatic gate potential U is attached to the normal region. It is found that owing to buckled structure of silicene, the transmission probabilities and consequently valley-resolved conductance of the junction can be turned on or off by adjusting electric field strength, the number of barriers, and electrostatic gate voltage. Remarkably, the fully valley polarized current can be achieved by increasing the number of barriers in the proposed device. The effect of the number of barriers on the total charge conductance G c of such a junction versus barrier length has also been investigated and it is shown that by increasing the number of barriers the amplitudes of G c oscillations decrease. It is also found that Fano Factor strongly modulated by applying electric field, number of barriers, and gate voltage. In particular, in presence of an electrostatic gate potential, Fano Factor reaches the full Poissonian value F = 1 , which signifies that transport is forbidden ( T → 0 ) and pure tunneling occurs in this junction.
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Fano Factor for dirac electrons in a supperlattice of normal ferromagnetic normal silicene junction
Superlattices and Microstructures, 2017Co-Authors: Zeinab Lorestaniweiss, Zeinab RashidianAbstract:Abstract We investigate the electron transport in the presence of electric field and gate potential in a supperlattice of normal/ferromagnetic/normal silicene junction. We compute the total conductance and Fano Factor using the transfer matrix method and Landauer-Buttiker formula. The total conductance and Fano Factor of the silicene contain interesting information of the transport properties of the charge carriers. The dependence of the Fano Factor behavior on the electric field strength, the gate potential, the thickness of the ferromagnetic region and more importantly the dependence on the number of barriers have been plotted. Our aim is to achieve a more accurate picture of the dependence of the Fano Factor on parameters mentioned above. In this junction, Fano Factor oscillates with the thickness of the ferromagnetic region, the electric field strength and the gate voltage in the ferromagnetic regions. Also we found that diffusive transport ( F = 1 / 3 ) occurs by taking large enough length of the ferromagnetic regions and tiny electric field strength. Another remarkable point is that Fano Factor attains the full Poissonian value ( F = 1 ) , by controlling the electric field strength and the length of the ferromagnetic regions. We see that with remaining intact the conductance, we can change the transport from Poissonian to diffusive transport by controlling the length of the ferromagnetic regions. However, these findings occur exactly in the case of Δ z E = 0.5 when the number of barriers is large enough. Moreover, with considering dependence of the Fano Factor on the electrostatic potential and electric field strength, we have proved that these parameters are controllable parameters on the kind of transport. It is said that Fano Factor is very sensitive to the mentioned parameters and can be controlled by these parameters. In fact, we show that the value of Fano Factor is a valuable tool for distinguishing the behavior of transport whereas this kind of information cannot be extracted from the conductance.
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fully valley spin polarized current and Fano Factor through the graphene ferromagnetic silicene graphene junction
Journal of Magnetism and Magnetic Materials, 2017Co-Authors: Zeinab Rashidian, Zeinab Lorestaniweiss, Saeid Rezaeipour, Yaser Hajati, Akiko UedaAbstract:Abstract In this work, we study the transport properties of Dirac fermions through the ferromagnetic silicene which is sandwiched between the Graphene leads (G/FS/G). Spin/valley conductance, spin/valley polarization, and also Fano Factor are theoretically calculated using the Landauer-Buttiker formula. We find that the fully valley and spin polarized currents through the G/FS/G junction can be obtained by increasing the electric field strength and the length of ferromagnetic silicene region. Moreover, the valley polarization can be tuned from negative to positive values by changing the electric field. We find that the Fano Factor also changes with the spin and valley polarization. Our findings of high controllability of the spin and valley transport in such a G/FS/G junction the potential of this junction for spin-valleytronics applications.
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Fano Factor for Dirac electrons in a supperlattice of normal/ferromagnetic/normal silicene junction
Superlattices and Microstructures, 2017Co-Authors: Zeinab Lorestaniweiss, Zeinab RashidianAbstract:Abstract We investigate the electron transport in the presence of electric field and gate potential in a supperlattice of normal/ferromagnetic/normal silicene junction. We compute the total conductance and Fano Factor using the transfer matrix method and Landauer-Buttiker formula. The total conductance and Fano Factor of the silicene contain interesting information of the transport properties of the charge carriers. The dependence of the Fano Factor behavior on the electric field strength, the gate potential, the thickness of the ferromagnetic region and more importantly the dependence on the number of barriers have been plotted. Our aim is to achieve a more accurate picture of the dependence of the Fano Factor on parameters mentioned above. In this junction, Fano Factor oscillates with the thickness of the ferromagnetic region, the electric field strength and the gate voltage in the ferromagnetic regions. Also we found that diffusive transport ( F = 1 / 3 ) occurs by taking large enough length of the ferromagnetic regions and tiny electric field strength. Another remarkable point is that Fano Factor attains the full Poissonian value ( F = 1 ) , by controlling the electric field strength and the length of the ferromagnetic regions. We see that with remaining intact the conductance, we can change the transport from Poissonian to diffusive transport by controlling the length of the ferromagnetic regions. However, these findings occur exactly in the case of Δ z E = 0.5 when the number of barriers is large enough. Moreover, with considering dependence of the Fano Factor on the electrostatic potential and electric field strength, we have proved that these parameters are controllable parameters on the kind of transport. It is said that Fano Factor is very sensitive to the mentioned parameters and can be controlled by these parameters. In fact, we show that the value of Fano Factor is a valuable tool for distinguishing the behavior of transport whereas this kind of information cannot be extracted from the conductance.
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Fully Valley/spin polarized current and Fano Factor through the Graphene/ferromagnetic silicene/Graphene junction
Journal of Magnetism and Magnetic Materials, 2017Co-Authors: Zeinab Rashidian, Zeinab Lorestaniweiss, Saeid Rezaeipour, Yaser Hajati, Akiko UedaAbstract:Abstract In this work, we study the transport properties of Dirac fermions through the ferromagnetic silicene which is sandwiched between the Graphene leads (G/FS/G). Spin/valley conductance, spin/valley polarization, and also Fano Factor are theoretically calculated using the Landauer-Buttiker formula. We find that the fully valley and spin polarized currents through the G/FS/G junction can be obtained by increasing the electric field strength and the length of ferromagnetic silicene region. Moreover, the valley polarization can be tuned from negative to positive values by changing the electric field. We find that the Fano Factor also changes with the spin and valley polarization. Our findings of high controllability of the spin and valley transport in such a G/FS/G junction the potential of this junction for spin-valleytronics applications.
Zeinab Lorestaniweiss - One of the best experts on this subject based on the ideXlab platform.
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valley polarized current and Fano Factor in a ferromagnetic normal ferromagnetic silicene superlattice junction
Journal of Magnetism and Magnetic Materials, 2017Co-Authors: Zeinab Rashidian, Zeinab Lorestaniweiss, Yaser Hajati, S. Rezaeipour, Gholamreza RashediAbstract:Abstract In this paper, based on the transfer-matrix method, we investigate the transport properties of Dirac fermions through a superlattice of ferromagnetic/normal/ferromagnetic (FNF) buckled silicene junction where an electrostatic gate potential U is attached to the normal region. It is found that owing to buckled structure of silicene, the transmission probabilities and consequently valley-resolved conductance of the junction can be turned on or off by adjusting electric field strength, the number of barriers, and electrostatic gate voltage. Remarkably, the fully valley polarized current can be achieved by increasing the number of barriers in the proposed device. The effect of the number of barriers on the total charge conductance G c of such a junction versus barrier length has also been investigated and it is shown that by increasing the number of barriers the amplitudes of G c oscillations decrease. It is also found that Fano Factor strongly modulated by applying electric field, number of barriers, and gate voltage. In particular, in presence of an electrostatic gate potential, Fano Factor reaches the full Poissonian value F = 1 , which signifies that transport is forbidden ( T → 0 ) and pure tunneling occurs in this junction.
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Fano Factor for dirac electrons in a supperlattice of normal ferromagnetic normal silicene junction
Superlattices and Microstructures, 2017Co-Authors: Zeinab Lorestaniweiss, Zeinab RashidianAbstract:Abstract We investigate the electron transport in the presence of electric field and gate potential in a supperlattice of normal/ferromagnetic/normal silicene junction. We compute the total conductance and Fano Factor using the transfer matrix method and Landauer-Buttiker formula. The total conductance and Fano Factor of the silicene contain interesting information of the transport properties of the charge carriers. The dependence of the Fano Factor behavior on the electric field strength, the gate potential, the thickness of the ferromagnetic region and more importantly the dependence on the number of barriers have been plotted. Our aim is to achieve a more accurate picture of the dependence of the Fano Factor on parameters mentioned above. In this junction, Fano Factor oscillates with the thickness of the ferromagnetic region, the electric field strength and the gate voltage in the ferromagnetic regions. Also we found that diffusive transport ( F = 1 / 3 ) occurs by taking large enough length of the ferromagnetic regions and tiny electric field strength. Another remarkable point is that Fano Factor attains the full Poissonian value ( F = 1 ) , by controlling the electric field strength and the length of the ferromagnetic regions. We see that with remaining intact the conductance, we can change the transport from Poissonian to diffusive transport by controlling the length of the ferromagnetic regions. However, these findings occur exactly in the case of Δ z E = 0.5 when the number of barriers is large enough. Moreover, with considering dependence of the Fano Factor on the electrostatic potential and electric field strength, we have proved that these parameters are controllable parameters on the kind of transport. It is said that Fano Factor is very sensitive to the mentioned parameters and can be controlled by these parameters. In fact, we show that the value of Fano Factor is a valuable tool for distinguishing the behavior of transport whereas this kind of information cannot be extracted from the conductance.
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fully valley spin polarized current and Fano Factor through the graphene ferromagnetic silicene graphene junction
Journal of Magnetism and Magnetic Materials, 2017Co-Authors: Zeinab Rashidian, Zeinab Lorestaniweiss, Saeid Rezaeipour, Yaser Hajati, Akiko UedaAbstract:Abstract In this work, we study the transport properties of Dirac fermions through the ferromagnetic silicene which is sandwiched between the Graphene leads (G/FS/G). Spin/valley conductance, spin/valley polarization, and also Fano Factor are theoretically calculated using the Landauer-Buttiker formula. We find that the fully valley and spin polarized currents through the G/FS/G junction can be obtained by increasing the electric field strength and the length of ferromagnetic silicene region. Moreover, the valley polarization can be tuned from negative to positive values by changing the electric field. We find that the Fano Factor also changes with the spin and valley polarization. Our findings of high controllability of the spin and valley transport in such a G/FS/G junction the potential of this junction for spin-valleytronics applications.
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Fano Factor for Dirac electrons in a supperlattice of normal/ferromagnetic/normal silicene junction
Superlattices and Microstructures, 2017Co-Authors: Zeinab Lorestaniweiss, Zeinab RashidianAbstract:Abstract We investigate the electron transport in the presence of electric field and gate potential in a supperlattice of normal/ferromagnetic/normal silicene junction. We compute the total conductance and Fano Factor using the transfer matrix method and Landauer-Buttiker formula. The total conductance and Fano Factor of the silicene contain interesting information of the transport properties of the charge carriers. The dependence of the Fano Factor behavior on the electric field strength, the gate potential, the thickness of the ferromagnetic region and more importantly the dependence on the number of barriers have been plotted. Our aim is to achieve a more accurate picture of the dependence of the Fano Factor on parameters mentioned above. In this junction, Fano Factor oscillates with the thickness of the ferromagnetic region, the electric field strength and the gate voltage in the ferromagnetic regions. Also we found that diffusive transport ( F = 1 / 3 ) occurs by taking large enough length of the ferromagnetic regions and tiny electric field strength. Another remarkable point is that Fano Factor attains the full Poissonian value ( F = 1 ) , by controlling the electric field strength and the length of the ferromagnetic regions. We see that with remaining intact the conductance, we can change the transport from Poissonian to diffusive transport by controlling the length of the ferromagnetic regions. However, these findings occur exactly in the case of Δ z E = 0.5 when the number of barriers is large enough. Moreover, with considering dependence of the Fano Factor on the electrostatic potential and electric field strength, we have proved that these parameters are controllable parameters on the kind of transport. It is said that Fano Factor is very sensitive to the mentioned parameters and can be controlled by these parameters. In fact, we show that the value of Fano Factor is a valuable tool for distinguishing the behavior of transport whereas this kind of information cannot be extracted from the conductance.
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Fully Valley/spin polarized current and Fano Factor through the Graphene/ferromagnetic silicene/Graphene junction
Journal of Magnetism and Magnetic Materials, 2017Co-Authors: Zeinab Rashidian, Zeinab Lorestaniweiss, Saeid Rezaeipour, Yaser Hajati, Akiko UedaAbstract:Abstract In this work, we study the transport properties of Dirac fermions through the ferromagnetic silicene which is sandwiched between the Graphene leads (G/FS/G). Spin/valley conductance, spin/valley polarization, and also Fano Factor are theoretically calculated using the Landauer-Buttiker formula. We find that the fully valley and spin polarized currents through the G/FS/G junction can be obtained by increasing the electric field strength and the length of ferromagnetic silicene region. Moreover, the valley polarization can be tuned from negative to positive values by changing the electric field. We find that the Fano Factor also changes with the spin and valley polarization. Our findings of high controllability of the spin and valley transport in such a G/FS/G junction the potential of this junction for spin-valleytronics applications.
Akiko Ueda - One of the best experts on this subject based on the ideXlab platform.
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fully valley spin polarized current and Fano Factor through the graphene ferromagnetic silicene graphene junction
Journal of Magnetism and Magnetic Materials, 2017Co-Authors: Zeinab Rashidian, Zeinab Lorestaniweiss, Saeid Rezaeipour, Yaser Hajati, Akiko UedaAbstract:Abstract In this work, we study the transport properties of Dirac fermions through the ferromagnetic silicene which is sandwiched between the Graphene leads (G/FS/G). Spin/valley conductance, spin/valley polarization, and also Fano Factor are theoretically calculated using the Landauer-Buttiker formula. We find that the fully valley and spin polarized currents through the G/FS/G junction can be obtained by increasing the electric field strength and the length of ferromagnetic silicene region. Moreover, the valley polarization can be tuned from negative to positive values by changing the electric field. We find that the Fano Factor also changes with the spin and valley polarization. Our findings of high controllability of the spin and valley transport in such a G/FS/G junction the potential of this junction for spin-valleytronics applications.
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Fully Valley/spin polarized current and Fano Factor through the Graphene/ferromagnetic silicene/Graphene junction
Journal of Magnetism and Magnetic Materials, 2017Co-Authors: Zeinab Rashidian, Zeinab Lorestaniweiss, Saeid Rezaeipour, Yaser Hajati, Akiko UedaAbstract:Abstract In this work, we study the transport properties of Dirac fermions through the ferromagnetic silicene which is sandwiched between the Graphene leads (G/FS/G). Spin/valley conductance, spin/valley polarization, and also Fano Factor are theoretically calculated using the Landauer-Buttiker formula. We find that the fully valley and spin polarized currents through the G/FS/G junction can be obtained by increasing the electric field strength and the length of ferromagnetic silicene region. Moreover, the valley polarization can be tuned from negative to positive values by changing the electric field. We find that the Fano Factor also changes with the spin and valley polarization. Our findings of high controllability of the spin and valley transport in such a G/FS/G junction the potential of this junction for spin-valleytronics applications.
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conductance and Fano Factor in normal ferromagnetic normal bilayer graphene junction
Journal of Physics: Condensed Matter, 2014Co-Authors: Zeinab Rashidian, Akiko Ueda, Gholamreza Rashedi, F M Mojarabian, Parvin Bayati, Takehito YokoyamaAbstract:We theoretically investigate the transport properties of bilayer graphene junctions, where the ferromagnetic strips are attached to the middle region of the graphene sheet. In these junctions, we can control the band gap and the band structure of the bilayer graphene by using the bias voltage between the layers and the exchange field induced on the layers. The conductance and Fano Factor (F ) are calculated by the Landauer–Buttiker formula. It is found that when the voltage between the layers or the exchange field are tuned, the pseudodiffusive (F = 1/3) transport turns into tunneling (F = 1) or ballistic transport (F = 0). By tuning the potential difference between the layers, one can control the spin polarization of the current.
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Conductance and Fano Factor in normal/ferromagnetic/normal bilayer graphene junction.
Journal of physics. Condensed matter : an Institute of Physics journal, 2014Co-Authors: Zeinab Rashidian, Akiko Ueda, Gholamreza Rashedi, F M Mojarabian, Parvin Bayati, Takehito YokoyamaAbstract:We theoretically investigate the transport properties of bilayer graphene junctions, where the ferromagnetic strips are attached to the middle region of the graphene sheet. In these junctions, we can control the band gap and the band structure of the bilayer graphene by using the bias voltage between the layers and the exchange field induced on the layers. The conductance and Fano Factor (F ) are calculated by the Landauer–Buttiker formula. It is found that when the voltage between the layers or the exchange field are tuned, the pseudodiffusive (F = 1/3) transport turns into tunneling (F = 1) or ballistic transport (F = 0). By tuning the potential difference between the layers, one can control the spin polarization of the current.
Yaser Hajati - One of the best experts on this subject based on the ideXlab platform.
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valley polarized current and Fano Factor in a ferromagnetic normal ferromagnetic silicene superlattice junction
Journal of Magnetism and Magnetic Materials, 2017Co-Authors: Zeinab Rashidian, Zeinab Lorestaniweiss, Yaser Hajati, S. Rezaeipour, Gholamreza RashediAbstract:Abstract In this paper, based on the transfer-matrix method, we investigate the transport properties of Dirac fermions through a superlattice of ferromagnetic/normal/ferromagnetic (FNF) buckled silicene junction where an electrostatic gate potential U is attached to the normal region. It is found that owing to buckled structure of silicene, the transmission probabilities and consequently valley-resolved conductance of the junction can be turned on or off by adjusting electric field strength, the number of barriers, and electrostatic gate voltage. Remarkably, the fully valley polarized current can be achieved by increasing the number of barriers in the proposed device. The effect of the number of barriers on the total charge conductance G c of such a junction versus barrier length has also been investigated and it is shown that by increasing the number of barriers the amplitudes of G c oscillations decrease. It is also found that Fano Factor strongly modulated by applying electric field, number of barriers, and gate voltage. In particular, in presence of an electrostatic gate potential, Fano Factor reaches the full Poissonian value F = 1 , which signifies that transport is forbidden ( T → 0 ) and pure tunneling occurs in this junction.
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fully valley spin polarized current and Fano Factor through the graphene ferromagnetic silicene graphene junction
Journal of Magnetism and Magnetic Materials, 2017Co-Authors: Zeinab Rashidian, Zeinab Lorestaniweiss, Saeid Rezaeipour, Yaser Hajati, Akiko UedaAbstract:Abstract In this work, we study the transport properties of Dirac fermions through the ferromagnetic silicene which is sandwiched between the Graphene leads (G/FS/G). Spin/valley conductance, spin/valley polarization, and also Fano Factor are theoretically calculated using the Landauer-Buttiker formula. We find that the fully valley and spin polarized currents through the G/FS/G junction can be obtained by increasing the electric field strength and the length of ferromagnetic silicene region. Moreover, the valley polarization can be tuned from negative to positive values by changing the electric field. We find that the Fano Factor also changes with the spin and valley polarization. Our findings of high controllability of the spin and valley transport in such a G/FS/G junction the potential of this junction for spin-valleytronics applications.
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Fully Valley/spin polarized current and Fano Factor through the Graphene/ferromagnetic silicene/Graphene junction
Journal of Magnetism and Magnetic Materials, 2017Co-Authors: Zeinab Rashidian, Zeinab Lorestaniweiss, Saeid Rezaeipour, Yaser Hajati, Akiko UedaAbstract:Abstract In this work, we study the transport properties of Dirac fermions through the ferromagnetic silicene which is sandwiched between the Graphene leads (G/FS/G). Spin/valley conductance, spin/valley polarization, and also Fano Factor are theoretically calculated using the Landauer-Buttiker formula. We find that the fully valley and spin polarized currents through the G/FS/G junction can be obtained by increasing the electric field strength and the length of ferromagnetic silicene region. Moreover, the valley polarization can be tuned from negative to positive values by changing the electric field. We find that the Fano Factor also changes with the spin and valley polarization. Our findings of high controllability of the spin and valley transport in such a G/FS/G junction the potential of this junction for spin-valleytronics applications.
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Valley polarized current and Fano Factor in a ferromagnetic/normal/ferromagnetic silicene superlattice junction
Journal of Magnetism and Magnetic Materials, 2017Co-Authors: Zeinab Rashidian, Zeinab Lorestaniweiss, Yaser Hajati, S. Rezaeipour, Gholamreza RashediAbstract:Abstract In this paper, based on the transfer-matrix method, we investigate the transport properties of Dirac fermions through a superlattice of ferromagnetic/normal/ferromagnetic (FNF) buckled silicene junction where an electrostatic gate potential U is attached to the normal region. It is found that owing to buckled structure of silicene, the transmission probabilities and consequently valley-resolved conductance of the junction can be turned on or off by adjusting electric field strength, the number of barriers, and electrostatic gate voltage. Remarkably, the fully valley polarized current can be achieved by increasing the number of barriers in the proposed device. The effect of the number of barriers on the total charge conductance G c of such a junction versus barrier length has also been investigated and it is shown that by increasing the number of barriers the amplitudes of G c oscillations decrease. It is also found that Fano Factor strongly modulated by applying electric field, number of barriers, and gate voltage. In particular, in presence of an electrostatic gate potential, Fano Factor reaches the full Poissonian value F = 1 , which signifies that transport is forbidden ( T → 0 ) and pure tunneling occurs in this junction.
Srabanti Chaudhury - One of the best experts on this subject based on the ideXlab platform.
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poisson indicator and Fano Factor for probing dynamic disorder in single molecule enzyme inhibition kinetics
Journal of Physical Chemistry B, 2014Co-Authors: Srabanti ChaudhuryAbstract:We consider a generic stochastic model to describe the kinetics of single-molecule enzyme inhibition reactions in which the turnover events correspond to conversion of substrate into a product by a single enzyme molecule in the presence of an inhibitor. We observe that slow fluctuations between the active and inhibited state of the enzyme or the enzyme substrate complex can induce dynamic disorder, which is manifested in the measurement of the Poisson indicator and the Fano Factor as functions of substrate concentrations for different inhibition reactions. For a single enzyme molecule inhibited by the product, we derive a single-molecule Michaelis–Menten equation for the reaction rate, which shows a dependence on the substrate concentration similar to the ensemble enzymatic catalysis rate as obtained from bulk experimental results. The measurement of Fano Factor is shown to be able to discriminate reactions following different inhibition mechanisms and also extract kinetic rates.
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Universality of Poisson indicator and Fano Factor of transport event statistics in ion channels and enzyme kinetics.
The journal of physical chemistry. B, 2013Co-Authors: Srabanti Chaudhury, Jianshu Cao, Nikolai A. SinitsynAbstract:We consider a generic stochastic model of ion transport through a single channel with arbitrary internal structure and kinetic rates of transitions between internal states. This model is also applicable to describe kinetics of a class of enzymes in which turnover events correspond to conversion of substrate into product by a single enzyme molecule. We show that measurement of statistics of single molecule transition time through the channel contains only restricted information about internal structure of the channel. In particular, the most accessible flux fluctuation characteristics, such as the Poisson indicator (P) and the Fano Factor (F) as function of solute concentration, depend only on three parameters in addition to the parameters of the Michaelis–Menten curve that characterizes average current through the channel. Nevertheless, measurement of Poisson indicator or Fano Factor for such renewal processes can discriminate reactions with multiple intermediate steps as well as provide valuable informat...
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Universality of Poisson Indicator and Fano Factor of Transport Event Statistics in Ion Channels and Enzyme Kinetics B
The Journal of Physical Chemistry, 2013Co-Authors: Srabanti Chaudhury, Jianshu Cao, Nikolai A. SinitsynAbstract:We consider a generic stochastic model of ion transport through a single channel with arbitrary internal structure and kinetic rates of transitions between internal states. This model is also applicable to describe kinetics of a class of enzymes in which turnover events correspond to conversion of substrate into product by a single enzyme molecule. We show that measurement of statistics of single molecule transition time through the channel contains only restricted information about internal structure of the channel. In particular, the most accessible flux fluctuation characteristics, such as the Poisson indicator (P) and the Fano Factor (F) as function of solute concentration, depend only on three parameters in addition to the parameters of the Michaelis–Menten curve that characterizes average current through the channel. Nevertheless, measurement of Poisson indicator or Fano Factor for such renewal processes can discriminate reactions with multiple intermediate steps as well as provide valuable information about the internal kinetic rates.
