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J Massies - One of the best experts on this subject based on the ideXlab platform.
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High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy.
Applied Physics Letters, 2001Co-Authors: Pierre Lefebvre, A Morel, M Gallart, Thierry Taliercio, J Allegre, Bernard Gil, H Mathieu, B Damilano, N Grandjean, J MassiesAbstract:Time-resolvedphotoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from ∼5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and to PL decay rates covering four orders of magnitude. The plot of decay times versus PL energies is very well fitted by a calculation of the electron–hole recombination probability versus well width. The only Fitting Parameter is the electric field in the well, which we find equal to 2.45±0.25 MV/cm, in excellent agreement with experimental Stokes shifts for this type of samples.
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high internal electric field in a graded width ingan gan quantum well accurate determination by time resolved photoluminescence spectroscopy
Applied Physics Letters, 2001Co-Authors: Pierre Lefebvre, A Morel, M Gallart, Thierry Taliercio, J Allegre, Bernard Gil, H Mathieu, B Damilano, N Grandjean, J MassiesAbstract:Time-resolvedphotoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from ∼5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and to PL decay rates covering four orders of magnitude. The plot of decay times versus PL energies is very well fitted by a calculation of the electron–hole recombination probability versus well width. The only Fitting Parameter is the electric field in the well, which we find equal to 2.45±0.25 MV/cm, in excellent agreement with experimental Stokes shifts for this type of samples.
Pierre Lefebvre - One of the best experts on this subject based on the ideXlab platform.
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High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy.
Applied Physics Letters, 2001Co-Authors: Pierre Lefebvre, A Morel, M Gallart, Thierry Taliercio, J Allegre, Bernard Gil, H Mathieu, B Damilano, N Grandjean, J MassiesAbstract:Time-resolvedphotoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from ∼5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and to PL decay rates covering four orders of magnitude. The plot of decay times versus PL energies is very well fitted by a calculation of the electron–hole recombination probability versus well width. The only Fitting Parameter is the electric field in the well, which we find equal to 2.45±0.25 MV/cm, in excellent agreement with experimental Stokes shifts for this type of samples.
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high internal electric field in a graded width ingan gan quantum well accurate determination by time resolved photoluminescence spectroscopy
Applied Physics Letters, 2001Co-Authors: Pierre Lefebvre, A Morel, M Gallart, Thierry Taliercio, J Allegre, Bernard Gil, H Mathieu, B Damilano, N Grandjean, J MassiesAbstract:Time-resolvedphotoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from ∼5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and to PL decay rates covering four orders of magnitude. The plot of decay times versus PL energies is very well fitted by a calculation of the electron–hole recombination probability versus well width. The only Fitting Parameter is the electric field in the well, which we find equal to 2.45±0.25 MV/cm, in excellent agreement with experimental Stokes shifts for this type of samples.
H Mathieu - One of the best experts on this subject based on the ideXlab platform.
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High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy.
Applied Physics Letters, 2001Co-Authors: Pierre Lefebvre, A Morel, M Gallart, Thierry Taliercio, J Allegre, Bernard Gil, H Mathieu, B Damilano, N Grandjean, J MassiesAbstract:Time-resolvedphotoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from ∼5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and to PL decay rates covering four orders of magnitude. The plot of decay times versus PL energies is very well fitted by a calculation of the electron–hole recombination probability versus well width. The only Fitting Parameter is the electric field in the well, which we find equal to 2.45±0.25 MV/cm, in excellent agreement with experimental Stokes shifts for this type of samples.
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high internal electric field in a graded width ingan gan quantum well accurate determination by time resolved photoluminescence spectroscopy
Applied Physics Letters, 2001Co-Authors: Pierre Lefebvre, A Morel, M Gallart, Thierry Taliercio, J Allegre, Bernard Gil, H Mathieu, B Damilano, N Grandjean, J MassiesAbstract:Time-resolvedphotoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from ∼5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and to PL decay rates covering four orders of magnitude. The plot of decay times versus PL energies is very well fitted by a calculation of the electron–hole recombination probability versus well width. The only Fitting Parameter is the electric field in the well, which we find equal to 2.45±0.25 MV/cm, in excellent agreement with experimental Stokes shifts for this type of samples.
A Morel - One of the best experts on this subject based on the ideXlab platform.
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High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy.
Applied Physics Letters, 2001Co-Authors: Pierre Lefebvre, A Morel, M Gallart, Thierry Taliercio, J Allegre, Bernard Gil, H Mathieu, B Damilano, N Grandjean, J MassiesAbstract:Time-resolvedphotoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from ∼5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and to PL decay rates covering four orders of magnitude. The plot of decay times versus PL energies is very well fitted by a calculation of the electron–hole recombination probability versus well width. The only Fitting Parameter is the electric field in the well, which we find equal to 2.45±0.25 MV/cm, in excellent agreement with experimental Stokes shifts for this type of samples.
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high internal electric field in a graded width ingan gan quantum well accurate determination by time resolved photoluminescence spectroscopy
Applied Physics Letters, 2001Co-Authors: Pierre Lefebvre, A Morel, M Gallart, Thierry Taliercio, J Allegre, Bernard Gil, H Mathieu, B Damilano, N Grandjean, J MassiesAbstract:Time-resolvedphotoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from ∼5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and to PL decay rates covering four orders of magnitude. The plot of decay times versus PL energies is very well fitted by a calculation of the electron–hole recombination probability versus well width. The only Fitting Parameter is the electric field in the well, which we find equal to 2.45±0.25 MV/cm, in excellent agreement with experimental Stokes shifts for this type of samples.
M Gallart - One of the best experts on this subject based on the ideXlab platform.
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High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy.
Applied Physics Letters, 2001Co-Authors: Pierre Lefebvre, A Morel, M Gallart, Thierry Taliercio, J Allegre, Bernard Gil, H Mathieu, B Damilano, N Grandjean, J MassiesAbstract:Time-resolvedphotoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from ∼5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and to PL decay rates covering four orders of magnitude. The plot of decay times versus PL energies is very well fitted by a calculation of the electron–hole recombination probability versus well width. The only Fitting Parameter is the electric field in the well, which we find equal to 2.45±0.25 MV/cm, in excellent agreement with experimental Stokes shifts for this type of samples.
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high internal electric field in a graded width ingan gan quantum well accurate determination by time resolved photoluminescence spectroscopy
Applied Physics Letters, 2001Co-Authors: Pierre Lefebvre, A Morel, M Gallart, Thierry Taliercio, J Allegre, Bernard Gil, H Mathieu, B Damilano, N Grandjean, J MassiesAbstract:Time-resolvedphotoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from ∼5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and to PL decay rates covering four orders of magnitude. The plot of decay times versus PL energies is very well fitted by a calculation of the electron–hole recombination probability versus well width. The only Fitting Parameter is the electric field in the well, which we find equal to 2.45±0.25 MV/cm, in excellent agreement with experimental Stokes shifts for this type of samples.