The Experts below are selected from a list of 945 Experts worldwide ranked by ideXlab platform
Jianjun Li - One of the best experts on this subject based on the ideXlab platform.
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formation of stacking fault tetrahedron in single crystal cu during nanoindentation investigated by molecular dynamics
Computational Materials Science, 2017Co-Authors: Lei Deng, Xinyun Wang, Jianjun LiAbstract:Abstract A novel mechanism without involvement of vacancy or Frank Loop is put forward to cast light on the formation of stacking fault tetrahedron (SFT) during plastic deformation of bulk single-crystal Cu with pre-existing parallel coherent twin boundaries (CTBs) via large scale molecular dynamics (MD) simulation. The fresh mechanism is totally different with Silcox-Hirsch mechanism and its sequelae, which supports that to produce an SFT during plastic deformation, formation of Frank Loop is not essential in metals with low stacking fault energy (SFE).
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formation of stacking fault tetrahedron in single crystal cu during nanoindentation investigated by molecular dynamics
Computational Materials Science, 2017Co-Authors: Lei Deng, Xinyun Wang, Jianjun LiAbstract:Abstract A novel mechanism without involvement of vacancy or Frank Loop is put forward to cast light on the formation of stacking fault tetrahedron (SFT) during plastic deformation of bulk single-crystal Cu with pre-existing parallel coherent twin boundaries (CTBs) via large scale molecular dynamics (MD) simulation. The fresh mechanism is totally different with Silcox-Hirsch mechanism and its sequelae, which supports that to produce an SFT during plastic deformation, formation of Frank Loop is not essential in metals with low stacking fault energy (SFE).
Lei Deng - One of the best experts on this subject based on the ideXlab platform.
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formation of stacking fault tetrahedron in single crystal cu during nanoindentation investigated by molecular dynamics
Computational Materials Science, 2017Co-Authors: Lei Deng, Xinyun Wang, Jianjun LiAbstract:Abstract A novel mechanism without involvement of vacancy or Frank Loop is put forward to cast light on the formation of stacking fault tetrahedron (SFT) during plastic deformation of bulk single-crystal Cu with pre-existing parallel coherent twin boundaries (CTBs) via large scale molecular dynamics (MD) simulation. The fresh mechanism is totally different with Silcox-Hirsch mechanism and its sequelae, which supports that to produce an SFT during plastic deformation, formation of Frank Loop is not essential in metals with low stacking fault energy (SFE).
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formation of stacking fault tetrahedron in single crystal cu during nanoindentation investigated by molecular dynamics
Computational Materials Science, 2017Co-Authors: Lei Deng, Xinyun Wang, Jianjun LiAbstract:Abstract A novel mechanism without involvement of vacancy or Frank Loop is put forward to cast light on the formation of stacking fault tetrahedron (SFT) during plastic deformation of bulk single-crystal Cu with pre-existing parallel coherent twin boundaries (CTBs) via large scale molecular dynamics (MD) simulation. The fresh mechanism is totally different with Silcox-Hirsch mechanism and its sequelae, which supports that to produce an SFT during plastic deformation, formation of Frank Loop is not essential in metals with low stacking fault energy (SFE).
Kiet Tieu - One of the best experts on this subject based on the ideXlab platform.
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the formation and destruction of stacking fault tetrahedron in fcc metals a molecular dynamics study
Scripta Materialia, 2017Co-Authors: Liang Zhang, Guillaume Michal, Guanyu Deng, Cheng Lu, Kiet TieuAbstract:Abstract Molecular dynamics simulations were conducted to study the formation and destruction of stacking fault tetrahedron (SFT) in fcc metals. The stacking fault energy, the size of vacancy cluster and temperature were found to play a significant role in the formation of a perfect SFT. Also, it was found that the compressive stress can unzip the perfect SFT to a truncated one, and can facilitate the destruction of SFT by transforming the faulted Frank Loop to the unfaulted full dislocation Loop. We provided the atomic details of how the unfaulting occurs using molecular dynamics method.
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stacking fault tetrahedron induced plasticity in copper single crystal
Materials Science and Engineering A-structural Materials Properties Microstructure and Processing, 2017Co-Authors: Liang Zhang, Lihong Su, Cheng Lu, Kiet Tieu, Xing ZhaoAbstract:Abstract Stacking fault tetrahedron (SFT) is the most common type of vacancy clustered defects in fcc metals and alloys, and can play an important role in the mechanical properties of metallic materials. In this study, molecular dynamics (MD) simulations were carried out to investigate the incipience of plasticity and the underlying atomic mechanisms in copper single crystals with SFT. Different deformation mechanisms of SFT were reported due to the crystal orientations and loading directions (compression and tension). The results showed that the incipient plasticity in crystals with SFT resulted from the heterogeneous dislocation nucleation from SFT, so the stress required for plastic deformation was less than that needed for perfect single crystals. Three crystal orientations ([1 0 0], [1 1 0] and [1 1 1]) were specified in this study because they can represent most of the typical deformation mechanisms of SFT. MD simulations revealed that the structural transformation of SFT was frequent under the applied loading; a metastable SFT structure and the collapse of SFT were usually observed. The structural transformation resulted in a different reduction of yield stress in compression and tension, and also caused a decreased or reversed compression/tension asymmetry. Compressive stress can result in the unfaulting of Frank Loop in some crystal orientations. According to the elastic theory of dislocation, the process of unfaulting was closely related to the size of the dislocation Loop and the stacking fault energy.
Liang Zhang - One of the best experts on this subject based on the ideXlab platform.
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the formation and destruction of stacking fault tetrahedron in fcc metals a molecular dynamics study
Scripta Materialia, 2017Co-Authors: Liang Zhang, Guillaume Michal, Guanyu Deng, Cheng Lu, Kiet TieuAbstract:Abstract Molecular dynamics simulations were conducted to study the formation and destruction of stacking fault tetrahedron (SFT) in fcc metals. The stacking fault energy, the size of vacancy cluster and temperature were found to play a significant role in the formation of a perfect SFT. Also, it was found that the compressive stress can unzip the perfect SFT to a truncated one, and can facilitate the destruction of SFT by transforming the faulted Frank Loop to the unfaulted full dislocation Loop. We provided the atomic details of how the unfaulting occurs using molecular dynamics method.
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stacking fault tetrahedron induced plasticity in copper single crystal
Materials Science and Engineering A-structural Materials Properties Microstructure and Processing, 2017Co-Authors: Liang Zhang, Lihong Su, Cheng Lu, Kiet Tieu, Xing ZhaoAbstract:Abstract Stacking fault tetrahedron (SFT) is the most common type of vacancy clustered defects in fcc metals and alloys, and can play an important role in the mechanical properties of metallic materials. In this study, molecular dynamics (MD) simulations were carried out to investigate the incipience of plasticity and the underlying atomic mechanisms in copper single crystals with SFT. Different deformation mechanisms of SFT were reported due to the crystal orientations and loading directions (compression and tension). The results showed that the incipient plasticity in crystals with SFT resulted from the heterogeneous dislocation nucleation from SFT, so the stress required for plastic deformation was less than that needed for perfect single crystals. Three crystal orientations ([1 0 0], [1 1 0] and [1 1 1]) were specified in this study because they can represent most of the typical deformation mechanisms of SFT. MD simulations revealed that the structural transformation of SFT was frequent under the applied loading; a metastable SFT structure and the collapse of SFT were usually observed. The structural transformation resulted in a different reduction of yield stress in compression and tension, and also caused a decreased or reversed compression/tension asymmetry. Compressive stress can result in the unfaulting of Frank Loop in some crystal orientations. According to the elastic theory of dislocation, the process of unfaulting was closely related to the size of the dislocation Loop and the stacking fault energy.
Xinyun Wang - One of the best experts on this subject based on the ideXlab platform.
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formation of stacking fault tetrahedron in single crystal cu during nanoindentation investigated by molecular dynamics
Computational Materials Science, 2017Co-Authors: Lei Deng, Xinyun Wang, Jianjun LiAbstract:Abstract A novel mechanism without involvement of vacancy or Frank Loop is put forward to cast light on the formation of stacking fault tetrahedron (SFT) during plastic deformation of bulk single-crystal Cu with pre-existing parallel coherent twin boundaries (CTBs) via large scale molecular dynamics (MD) simulation. The fresh mechanism is totally different with Silcox-Hirsch mechanism and its sequelae, which supports that to produce an SFT during plastic deformation, formation of Frank Loop is not essential in metals with low stacking fault energy (SFE).
-
formation of stacking fault tetrahedron in single crystal cu during nanoindentation investigated by molecular dynamics
Computational Materials Science, 2017Co-Authors: Lei Deng, Xinyun Wang, Jianjun LiAbstract:Abstract A novel mechanism without involvement of vacancy or Frank Loop is put forward to cast light on the formation of stacking fault tetrahedron (SFT) during plastic deformation of bulk single-crystal Cu with pre-existing parallel coherent twin boundaries (CTBs) via large scale molecular dynamics (MD) simulation. The fresh mechanism is totally different with Silcox-Hirsch mechanism and its sequelae, which supports that to produce an SFT during plastic deformation, formation of Frank Loop is not essential in metals with low stacking fault energy (SFE).
