The Experts below are selected from a list of 93 Experts worldwide ranked by ideXlab platform
Stephan G. Mueller - One of the best experts on this subject based on the ideXlab platform.
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basal plane dislocation multiplication via the hopping Frank Read Source mechanism and observations of prismatic glide in 4h sic
Materials Science Forum, 2012Co-Authors: Huanhuan Wang, Balaji Raghothamachar, Michael Dudley, Edward K. Sanchez, Darren Hansen, Roman Drachev, Stephan G. Mueller, Sha Yan Byrapa, Mark J LobodaAbstract:In this paper, we report on the synchrotron white beam topographic (SWBXT) observation of “hopping” Frank-Read Sources in 4H-SiC. A detailed mechanism for this process is presented which involves thReading edge dislocations experiencing a double deflection process involving overgrowth by a macrostep (MP) followed by impingement of that macrostep against a step moving in the opposite direction. These processes enable the single-ended Frank-Read Sources created by the pinning of the deflected basal plane dislocation segments at the less mobile thReading edge dislocation segments to “hop” from one slip plane to other parallel slip planes. We also report on the nucleation of 1/3 { } prismatic dislocation half-loops at the hollow cores of micropipes and their glide under thermal shear stress.
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Basal plane dislocation multiplication via the Hopping Frank-Read Source mechanism in 4H-SiC
Applied Physics Letters, 2012Co-Authors: Huanhuan Wang, S. Byrappa, S. Sun, Balaji Raghothamachar, Michael Dudley, Edward K. Sanchez, Darren Hansen, Roman Drachev, Stephan G. MuellerAbstract:Synchrotron white beam x-ray topography (SWBXT) observations are reported of single-ended Frank-Read Sources in 4H-SiC. These result from inter-conversion between basal plane dislocations (BPDs) and thReading edge dislocations (TEDs) brought about by step interactions on the growth interface resulting in a dislocation comprising several glissile BPD segments on parallel basal planes interconnected by relatively sessile TED segments. Under stress, the BPD segments become pinned by the TED segments producing single ended Frank-Read Sources. Since the BPDs appear to “hop” between basal planes, this apparently dominant multiplication mechanism for BPDs in 4H-SiC is referred to as the “Hopping” Frank-Read Source mechanism.
Huanhuan Wang - One of the best experts on this subject based on the ideXlab platform.
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basal plane dislocation multiplication via the hopping Frank Read Source mechanism and observations of prismatic glide in 4h sic
Materials Science Forum, 2012Co-Authors: Huanhuan Wang, Balaji Raghothamachar, Michael Dudley, Edward K. Sanchez, Darren Hansen, Roman Drachev, Stephan G. Mueller, Sha Yan Byrapa, Mark J LobodaAbstract:In this paper, we report on the synchrotron white beam topographic (SWBXT) observation of “hopping” Frank-Read Sources in 4H-SiC. A detailed mechanism for this process is presented which involves thReading edge dislocations experiencing a double deflection process involving overgrowth by a macrostep (MP) followed by impingement of that macrostep against a step moving in the opposite direction. These processes enable the single-ended Frank-Read Sources created by the pinning of the deflected basal plane dislocation segments at the less mobile thReading edge dislocation segments to “hop” from one slip plane to other parallel slip planes. We also report on the nucleation of 1/3 { } prismatic dislocation half-loops at the hollow cores of micropipes and their glide under thermal shear stress.
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Basal plane dislocation multiplication via the Hopping Frank-Read Source mechanism in 4H-SiC
Applied Physics Letters, 2012Co-Authors: Huanhuan Wang, S. Byrappa, S. Sun, Balaji Raghothamachar, Michael Dudley, Edward K. Sanchez, Darren Hansen, Roman Drachev, Stephan G. MuellerAbstract:Synchrotron white beam x-ray topography (SWBXT) observations are reported of single-ended Frank-Read Sources in 4H-SiC. These result from inter-conversion between basal plane dislocations (BPDs) and thReading edge dislocations (TEDs) brought about by step interactions on the growth interface resulting in a dislocation comprising several glissile BPD segments on parallel basal planes interconnected by relatively sessile TED segments. Under stress, the BPD segments become pinned by the TED segments producing single ended Frank-Read Sources. Since the BPDs appear to “hop” between basal planes, this apparently dominant multiplication mechanism for BPDs in 4H-SiC is referred to as the “Hopping” Frank-Read Source mechanism.
Balaji Raghothamachar - One of the best experts on this subject based on the ideXlab platform.
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basal plane dislocation multiplication via the hopping Frank Read Source mechanism and observations of prismatic glide in 4h sic
Materials Science Forum, 2012Co-Authors: Huanhuan Wang, Balaji Raghothamachar, Michael Dudley, Edward K. Sanchez, Darren Hansen, Roman Drachev, Stephan G. Mueller, Sha Yan Byrapa, Mark J LobodaAbstract:In this paper, we report on the synchrotron white beam topographic (SWBXT) observation of “hopping” Frank-Read Sources in 4H-SiC. A detailed mechanism for this process is presented which involves thReading edge dislocations experiencing a double deflection process involving overgrowth by a macrostep (MP) followed by impingement of that macrostep against a step moving in the opposite direction. These processes enable the single-ended Frank-Read Sources created by the pinning of the deflected basal plane dislocation segments at the less mobile thReading edge dislocation segments to “hop” from one slip plane to other parallel slip planes. We also report on the nucleation of 1/3 { } prismatic dislocation half-loops at the hollow cores of micropipes and their glide under thermal shear stress.
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Basal plane dislocation multiplication via the Hopping Frank-Read Source mechanism in 4H-SiC
Applied Physics Letters, 2012Co-Authors: Huanhuan Wang, S. Byrappa, S. Sun, Balaji Raghothamachar, Michael Dudley, Edward K. Sanchez, Darren Hansen, Roman Drachev, Stephan G. MuellerAbstract:Synchrotron white beam x-ray topography (SWBXT) observations are reported of single-ended Frank-Read Sources in 4H-SiC. These result from inter-conversion between basal plane dislocations (BPDs) and thReading edge dislocations (TEDs) brought about by step interactions on the growth interface resulting in a dislocation comprising several glissile BPD segments on parallel basal planes interconnected by relatively sessile TED segments. Under stress, the BPD segments become pinned by the TED segments producing single ended Frank-Read Sources. Since the BPDs appear to “hop” between basal planes, this apparently dominant multiplication mechanism for BPDs in 4H-SiC is referred to as the “Hopping” Frank-Read Source mechanism.
Michael Dudley - One of the best experts on this subject based on the ideXlab platform.
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basal plane dislocation multiplication via the hopping Frank Read Source mechanism and observations of prismatic glide in 4h sic
Materials Science Forum, 2012Co-Authors: Huanhuan Wang, Balaji Raghothamachar, Michael Dudley, Edward K. Sanchez, Darren Hansen, Roman Drachev, Stephan G. Mueller, Sha Yan Byrapa, Mark J LobodaAbstract:In this paper, we report on the synchrotron white beam topographic (SWBXT) observation of “hopping” Frank-Read Sources in 4H-SiC. A detailed mechanism for this process is presented which involves thReading edge dislocations experiencing a double deflection process involving overgrowth by a macrostep (MP) followed by impingement of that macrostep against a step moving in the opposite direction. These processes enable the single-ended Frank-Read Sources created by the pinning of the deflected basal plane dislocation segments at the less mobile thReading edge dislocation segments to “hop” from one slip plane to other parallel slip planes. We also report on the nucleation of 1/3 { } prismatic dislocation half-loops at the hollow cores of micropipes and their glide under thermal shear stress.
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Basal plane dislocation multiplication via the Hopping Frank-Read Source mechanism in 4H-SiC
Applied Physics Letters, 2012Co-Authors: Huanhuan Wang, S. Byrappa, S. Sun, Balaji Raghothamachar, Michael Dudley, Edward K. Sanchez, Darren Hansen, Roman Drachev, Stephan G. MuellerAbstract:Synchrotron white beam x-ray topography (SWBXT) observations are reported of single-ended Frank-Read Sources in 4H-SiC. These result from inter-conversion between basal plane dislocations (BPDs) and thReading edge dislocations (TEDs) brought about by step interactions on the growth interface resulting in a dislocation comprising several glissile BPD segments on parallel basal planes interconnected by relatively sessile TED segments. Under stress, the BPD segments become pinned by the TED segments producing single ended Frank-Read Sources. Since the BPDs appear to “hop” between basal planes, this apparently dominant multiplication mechanism for BPDs in 4H-SiC is referred to as the “Hopping” Frank-Read Source mechanism.
Roman Drachev - One of the best experts on this subject based on the ideXlab platform.
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basal plane dislocation multiplication via the hopping Frank Read Source mechanism and observations of prismatic glide in 4h sic
Materials Science Forum, 2012Co-Authors: Huanhuan Wang, Balaji Raghothamachar, Michael Dudley, Edward K. Sanchez, Darren Hansen, Roman Drachev, Stephan G. Mueller, Sha Yan Byrapa, Mark J LobodaAbstract:In this paper, we report on the synchrotron white beam topographic (SWBXT) observation of “hopping” Frank-Read Sources in 4H-SiC. A detailed mechanism for this process is presented which involves thReading edge dislocations experiencing a double deflection process involving overgrowth by a macrostep (MP) followed by impingement of that macrostep against a step moving in the opposite direction. These processes enable the single-ended Frank-Read Sources created by the pinning of the deflected basal plane dislocation segments at the less mobile thReading edge dislocation segments to “hop” from one slip plane to other parallel slip planes. We also report on the nucleation of 1/3 { } prismatic dislocation half-loops at the hollow cores of micropipes and their glide under thermal shear stress.
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Basal plane dislocation multiplication via the Hopping Frank-Read Source mechanism in 4H-SiC
Applied Physics Letters, 2012Co-Authors: Huanhuan Wang, S. Byrappa, S. Sun, Balaji Raghothamachar, Michael Dudley, Edward K. Sanchez, Darren Hansen, Roman Drachev, Stephan G. MuellerAbstract:Synchrotron white beam x-ray topography (SWBXT) observations are reported of single-ended Frank-Read Sources in 4H-SiC. These result from inter-conversion between basal plane dislocations (BPDs) and thReading edge dislocations (TEDs) brought about by step interactions on the growth interface resulting in a dislocation comprising several glissile BPD segments on parallel basal planes interconnected by relatively sessile TED segments. Under stress, the BPD segments become pinned by the TED segments producing single ended Frank-Read Sources. Since the BPDs appear to “hop” between basal planes, this apparently dominant multiplication mechanism for BPDs in 4H-SiC is referred to as the “Hopping” Frank-Read Source mechanism.
