The Experts below are selected from a list of 303 Experts worldwide ranked by ideXlab platform
Gregory J Salamo - One of the best experts on this subject based on the ideXlab platform.
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mechanism of strain influenced quantum well thickness reduction in Gan aln short period superlattices
Nanotechnology, 2014Co-Authors: A V Kuchuk, V P Kladko, T L Petrenko, V P Bryksa, A Belyaev, Yu I Mazur, M E Ware, E A Decuir, Gregory J SalamoAbstract:We report on the mechanism of strain-influenced quantum well (QW) thickness reduction in GaN/AlN short-period superlattices grown by plasma-assisted molecular beam epitaxy. Density functional theory was used to support the idea of a thermally activated exchange mechanism between Al adatoms and Ga Surface atoms that is influenced by the strain state of the GaN QWs. These ab initio calculations support our experimentally observed reduction in QW thickness for different intrinsic strains.
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Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices.
Nanotechnology, 2014Co-Authors: A V Kuchuk, V P Kladko, T L Petrenko, V P Bryksa, A Belyaev, Yu I Mazur, M E Ware, E A Decuir, Gregory J SalamoAbstract:We report on the mechanism of strain-influenced quantum well (QW) thickness reduction in GaN/AlN short-period superlattices grown by plasma-assisted molecular beam epitaxy. Density functional theory was used to support the idea of a thermally activated exchange mechanism between Al adatoms and Ga Surface atoms that is influenced by the strain state of the GaN QWs. These ab initio calculations support our experimentally observed reduction in QW thickness for different intrinsic strains.
A V Kuchuk - One of the best experts on this subject based on the ideXlab platform.
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mechanism of strain influenced quantum well thickness reduction in Gan aln short period superlattices
Nanotechnology, 2014Co-Authors: A V Kuchuk, V P Kladko, T L Petrenko, V P Bryksa, A Belyaev, Yu I Mazur, M E Ware, E A Decuir, Gregory J SalamoAbstract:We report on the mechanism of strain-influenced quantum well (QW) thickness reduction in GaN/AlN short-period superlattices grown by plasma-assisted molecular beam epitaxy. Density functional theory was used to support the idea of a thermally activated exchange mechanism between Al adatoms and Ga Surface atoms that is influenced by the strain state of the GaN QWs. These ab initio calculations support our experimentally observed reduction in QW thickness for different intrinsic strains.
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Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices.
Nanotechnology, 2014Co-Authors: A V Kuchuk, V P Kladko, T L Petrenko, V P Bryksa, A Belyaev, Yu I Mazur, M E Ware, E A Decuir, Gregory J SalamoAbstract:We report on the mechanism of strain-influenced quantum well (QW) thickness reduction in GaN/AlN short-period superlattices grown by plasma-assisted molecular beam epitaxy. Density functional theory was used to support the idea of a thermally activated exchange mechanism between Al adatoms and Ga Surface atoms that is influenced by the strain state of the GaN QWs. These ab initio calculations support our experimentally observed reduction in QW thickness for different intrinsic strains.
M E Ware - One of the best experts on this subject based on the ideXlab platform.
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mechanism of strain influenced quantum well thickness reduction in Gan aln short period superlattices
Nanotechnology, 2014Co-Authors: A V Kuchuk, V P Kladko, T L Petrenko, V P Bryksa, A Belyaev, Yu I Mazur, M E Ware, E A Decuir, Gregory J SalamoAbstract:We report on the mechanism of strain-influenced quantum well (QW) thickness reduction in GaN/AlN short-period superlattices grown by plasma-assisted molecular beam epitaxy. Density functional theory was used to support the idea of a thermally activated exchange mechanism between Al adatoms and Ga Surface atoms that is influenced by the strain state of the GaN QWs. These ab initio calculations support our experimentally observed reduction in QW thickness for different intrinsic strains.
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Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices.
Nanotechnology, 2014Co-Authors: A V Kuchuk, V P Kladko, T L Petrenko, V P Bryksa, A Belyaev, Yu I Mazur, M E Ware, E A Decuir, Gregory J SalamoAbstract:We report on the mechanism of strain-influenced quantum well (QW) thickness reduction in GaN/AlN short-period superlattices grown by plasma-assisted molecular beam epitaxy. Density functional theory was used to support the idea of a thermally activated exchange mechanism between Al adatoms and Ga Surface atoms that is influenced by the strain state of the GaN QWs. These ab initio calculations support our experimentally observed reduction in QW thickness for different intrinsic strains.
V P Kladko - One of the best experts on this subject based on the ideXlab platform.
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mechanism of strain influenced quantum well thickness reduction in Gan aln short period superlattices
Nanotechnology, 2014Co-Authors: A V Kuchuk, V P Kladko, T L Petrenko, V P Bryksa, A Belyaev, Yu I Mazur, M E Ware, E A Decuir, Gregory J SalamoAbstract:We report on the mechanism of strain-influenced quantum well (QW) thickness reduction in GaN/AlN short-period superlattices grown by plasma-assisted molecular beam epitaxy. Density functional theory was used to support the idea of a thermally activated exchange mechanism between Al adatoms and Ga Surface atoms that is influenced by the strain state of the GaN QWs. These ab initio calculations support our experimentally observed reduction in QW thickness for different intrinsic strains.
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Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices.
Nanotechnology, 2014Co-Authors: A V Kuchuk, V P Kladko, T L Petrenko, V P Bryksa, A Belyaev, Yu I Mazur, M E Ware, E A Decuir, Gregory J SalamoAbstract:We report on the mechanism of strain-influenced quantum well (QW) thickness reduction in GaN/AlN short-period superlattices grown by plasma-assisted molecular beam epitaxy. Density functional theory was used to support the idea of a thermally activated exchange mechanism between Al adatoms and Ga Surface atoms that is influenced by the strain state of the GaN QWs. These ab initio calculations support our experimentally observed reduction in QW thickness for different intrinsic strains.
T L Petrenko - One of the best experts on this subject based on the ideXlab platform.
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mechanism of strain influenced quantum well thickness reduction in Gan aln short period superlattices
Nanotechnology, 2014Co-Authors: A V Kuchuk, V P Kladko, T L Petrenko, V P Bryksa, A Belyaev, Yu I Mazur, M E Ware, E A Decuir, Gregory J SalamoAbstract:We report on the mechanism of strain-influenced quantum well (QW) thickness reduction in GaN/AlN short-period superlattices grown by plasma-assisted molecular beam epitaxy. Density functional theory was used to support the idea of a thermally activated exchange mechanism between Al adatoms and Ga Surface atoms that is influenced by the strain state of the GaN QWs. These ab initio calculations support our experimentally observed reduction in QW thickness for different intrinsic strains.
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Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices.
Nanotechnology, 2014Co-Authors: A V Kuchuk, V P Kladko, T L Petrenko, V P Bryksa, A Belyaev, Yu I Mazur, M E Ware, E A Decuir, Gregory J SalamoAbstract:We report on the mechanism of strain-influenced quantum well (QW) thickness reduction in GaN/AlN short-period superlattices grown by plasma-assisted molecular beam epitaxy. Density functional theory was used to support the idea of a thermally activated exchange mechanism between Al adatoms and Ga Surface atoms that is influenced by the strain state of the GaN QWs. These ab initio calculations support our experimentally observed reduction in QW thickness for different intrinsic strains.