The Experts below are selected from a list of 54498 Experts worldwide ranked by ideXlab platform
John E. Bowers - One of the best experts on this subject based on the ideXlab platform.
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frequency response and Bandwidth enhancement in ge si avalanche photodiodes with over 840ghz Gain Bandwidth product
Optics Express, 2009Co-Authors: Wissem Sfar Zaoui, John E. Bowers, Huiwen Chen, Yimin Kang, Mike Morse, Mario J Paniccia, A Pauchard, J C CampbellAbstract:In this work we report a separate-absorption-charge-multiplication Ge/Si avalanche photodiode with an enhanced Gain-Bandwidth-product of 845GHz at a wavelength of 1310nm. The corresponding Gain value is 65 and the electrical Bandwidth is 13GHz at an optical input power of −30dBm. The unconventional high Gain-Bandwidth-product is investigated using device physical simulation and optical pulse response measurement. The analysis of the electric field distribution, electron and hole concentration and drift velocities in the device shows that the enhanced Gain-Bandwidth-product at high bias voltages is due to a decrease of the transit time and avalanche build-up time limitation at high fields.
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Optical Gain-Bandwidth product of vertical cavity laser amplifiers
Electronics Letters, 2001Co-Authors: Joachim Piprek, E.s. Bjorlin, John E. BowersAbstract:Trade-off between amplifier Gain and optical Bandwidth is investigated in the case of novel long-wavelength vertical-cavity semiconductor optical amplifiers. In agreement with measurements, simple formulas for the Gain-Bandwidth product are presented. Mirror optimisation promises Gain-Bandwidth products in the THz range.
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Analysis of the effect of an electric-field profile on the Gain Bandwidth product of avalanche photodetectors.
Optics Letters, 1997Co-Authors: Aaron R. Hawkins, John E. BowersAbstract:We investigate the effect of the electric-field profile on the Gain–Bandwidth product of avalanche photodetectors with separate absorption and multiplication. We show that for a given multiplication layer thickness the electric-field profile plays an important role in determining the Gain–Bandwidth product. The calculation results show that an increasing triangular electric-field profile yields a larger Gain–Bandwidth product than most other profiles for Si/InGaAs avalanche photodetectors.
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Design of InGaAs/Si avalanche photodetectors for 400-GHz Gain-Bandwidth product
Optoelectronic Integrated Circuits, 1997Co-Authors: Aaron R. Hawkins, John E. BowersAbstract:In an InGaAs/Si avalanche photodetector (APD), Si is used as the multiplication material to provide avalanche Gain, while InGaAs is used as the absorption material. High quantum efficiency, high Gain-Bandwidth product, and low noise for detection of wavelengths between 1.0 micrometer and 1.6 micrometer can be achieved in this way. We present possible design variations and analyze the performance of these APDs. Particular attention is paid to a 10 Gbit/s APD and we design InGaAs/Si APDs with a 3-dB Bandwidth larger than 10 GHz and a Gain-Bandwidth product greater than 400 GHz.
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High Gain-Bandwidth-product silicon heterointerface photodetector
Applied Physics Letters, 1997Co-Authors: Aaron R. Hawkins, Patrick Abraham, Klaus Streubel, John E. BowersAbstract:We report the fabrication of a near-infrared avalanche photodetector with a Gain-Bandwidth product of over 300 GHz. The detector uses a Si multiplication layer and an InGaAs absorption layer. A 3 dB Bandwidth of over 9 GHz was measured for current Gains as high as 35. Photocurrent measurements using 1.3 μm light indicate a quantum efficiency for the detector of 0.60, near the limit expected based on the absorber thickness.
J C Campbell - One of the best experts on this subject based on the ideXlab platform.
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frequency response and Bandwidth enhancement in ge si avalanche photodiodes with over 840ghz Gain Bandwidth product
Optics Express, 2009Co-Authors: Wissem Sfar Zaoui, John E. Bowers, Huiwen Chen, Yimin Kang, Mike Morse, Mario J Paniccia, A Pauchard, J C CampbellAbstract:In this work we report a separate-absorption-charge-multiplication Ge/Si avalanche photodiode with an enhanced Gain-Bandwidth-product of 845GHz at a wavelength of 1310nm. The corresponding Gain value is 65 and the electrical Bandwidth is 13GHz at an optical input power of −30dBm. The unconventional high Gain-Bandwidth-product is investigated using device physical simulation and optical pulse response measurement. The analysis of the electric field distribution, electron and hole concentration and drift velocities in the device shows that the enhanced Gain-Bandwidth-product at high bias voltages is due to a decrease of the transit time and avalanche build-up time limitation at high fields.
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high speed resonant cavity separate absorption and multiplication avalanche photodiodes with 130 ghz Gain Bandwidth product
Applied Physics Letters, 1997Co-Authors: H. Nie, K.a. Anselm, S S Murtaza, B G Streetman, J C CampbellAbstract:Previously it has been shown that resonant-cavity, separate absorption and multiplication (SAM) avalanche photodiodes (APDs) exhibit high peak external quantum efficiency (∼75%), low dark current, low bias voltage (<15 V), and low multiplication noise (0.2
Thomas Schneider - One of the best experts on this subject based on the ideXlab platform.
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frequency domain aperture for the Gain Bandwidth reduction of stimulated brillouin scattering
Optics Letters, 2012Co-Authors: Andrzej Wiatrek, Kambiz Jamshidi, Stefan Preusler, Thomas SchneiderAbstract:In this Letter, we propose a novel method based on the inhomogeneous Brillouin Gain saturation to reduce the Gain Bandwidth significantly below its natural value. Based on our first experiments, we report a decrease of the Bandwidth in a standard single mode fiber down to 3 MHz.
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Quasi-light-storage enhancement by reducing the Brillouin Gain Bandwidth
Applied Optics, 2011Co-Authors: Stefan Preussler, Andrzej Wiatrek, Kambiz Jamshidi, Thomas SchneiderAbstract:The quasi-light-storage (QLS) is a method for the variable and almost distortion free storage of optical data which is based on stimulated Brillouin scattering (SBS). The natural Gain Bandwidth of SBS limits the storage time of this method to up to 100 ns. We overcome this limit by the superposition of the SBS Gain Bandwidth with two losses. With this narrowed Gain Bandwidth, we were able to enhance the storage time for the QLS by 40%.
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brillouin scattering Gain Bandwidth reduction down to 3 4mhz
Optics Express, 2011Co-Authors: Stefan Preusler, Andrzej Wiatrek, Kambiz Jamshidi, Thomas SchneiderAbstract:We present a simple method for the stimulated Brillouin scattering (SBS) Gain Bandwidth reduction in an optical fiber. We were able to reduce the natural Bandwidth of 20MHz to around 3.4MHz by a superposition of the Gain with two losses produced by the same source. This reduced Bandwidth can drastically enhance the performance of many different applications which up to now were limited by the minimum of the natural SBS Bandwidth.
Kenichi Kasahara - One of the best experts on this subject based on the ideXlab platform.
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Temperature-insensitive vertical-cavity surface-emitting laser array with a broad Gain Bandwidth
Electronics Letters, 1995Co-Authors: M. Kajita, Takashi Yoshikawa, Kaori Kurihara, Yoshimasa Sugimoto, Hideaki Saito, Kenichi KasaharaAbstract:Temperature-insensitive vertical-cavity surface-emitting lasers (VCSELs) are promising devices for low-cost optical interconnection. The authors measured the injection current at a threshold and light output power of 1 mW at temperatures of 20, 50 and 80/spl deg/C. At 80/spl deg/C and 1 mW, the driving current for VCSELs with a broad Gain Bandwidth was reduced by /spl sim/20%, compared with that for conventional VCSELs. The deviation in driving current for VCSELs with a broad Gain Bandwidth was /spl sim/10%, which demonstrates that these VCSELs have uniform temperature characteristics in an 8/spl times/8 array.
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Temperature characteristics of a vertical-cavity surface-emitting laser with a broad-Gain Bandwidth
IEEE Journal of Selected Topics in Quantum Electronics, 1995Co-Authors: M. Kajita, T. Kawakami, M. Nido, A. Kimura, Takashi Yoshikawa, Kaori Kurihara, Yoshimasa Sugimoto, Kenichi KasaharaAbstract:Temperature-insensitive characteristics are of great importance in implementing the actual applications of vertical-cavity surface-emitting lasers (VCSEL's) because of the temperature change in the surroundings. To extend the operational temperature range of such lasers, we fabricated a VCSEL with a broad Gain Bandwidth. The active layers in VCSEL's consist of multiple quantum wells (MQW's) with different bandgap energies. From the change in the threshold current, with temperature as a parameter, we found that the operational temperature range of a VCSEL with a broad Gain Bandwidth is more than 20/spl deg/C wider than that of conventional VCSEL's, whose active layers consist of a single type of MQW. We demonstrate that the extended-Gain Bandwidth gives better temperature characteristics. In addition, we simulated the structure of the active layers, and the optimized structure resulted in a 1-mW light output power at less than 5 mA in a single transverse mode oscillation from 20-70/spl deg/C. >
Yimin Kang - One of the best experts on this subject based on the ideXlab platform.
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frequency response and Bandwidth enhancement in ge si avalanche photodiodes with over 840ghz Gain Bandwidth product
Optics Express, 2009Co-Authors: Wissem Sfar Zaoui, John E. Bowers, Huiwen Chen, Yimin Kang, Mike Morse, Mario J Paniccia, A Pauchard, J C CampbellAbstract:In this work we report a separate-absorption-charge-multiplication Ge/Si avalanche photodiode with an enhanced Gain-Bandwidth-product of 845GHz at a wavelength of 1310nm. The corresponding Gain value is 65 and the electrical Bandwidth is 13GHz at an optical input power of −30dBm. The unconventional high Gain-Bandwidth-product is investigated using device physical simulation and optical pulse response measurement. The analysis of the electric field distribution, electron and hole concentration and drift velocities in the device shows that the enhanced Gain-Bandwidth-product at high bias voltages is due to a decrease of the transit time and avalanche build-up time limitation at high fields.
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monolithic germanium silicon avalanche photodiodes with 340 ghz Gain Bandwidth product
Nature Photonics, 2009Co-Authors: Yimin Kang, Mike Morse, Mario J Paniccia, Handin Liu, Moshe Zadka, Stas Litski, Gadi Sarid, Alexandre Pauchard, Yinghao KuoAbstract:Significant progress has been made recently in demonstrating that silicon photonics is a promising technology for low-cost optical detectors, modulators and light sources1,2,3,4,5,6,7,8,9,10,11,12. It has often been assumed, however, that their performance is inferior to InP-based devices. Although this is true in most cases, one of the exceptions is the area of avalanche photodetectors, where silicon's material properties allow for high Gain with less excess noise than InP-based avalanche photodetectors and a theoretical sensitivity improvement of 3 dB or more. Here, we report a monolithically grown germanium/silicon avalanche photodetector with a Gain–Bandwidth product of 340 GHz, a keff of 0.09 and a sensitivity of −28 dB m at 10 Gb s−1. This is the highest reported Gain–Bandwidth product for any avalanche photodetector operating at 1,300 nm and a sensitivity that is equivalent to mature, commercially available III–V compound avalanche photodetectors. This work paves the way for the future development of low-cost, CMOS-based germanium/silicon avalanche photodetectors operating at data rates of 40 Gb s−1 or higher. A monolithically grown Ge/Si avalanche photodetectors (APD) with a Gain–Bandwidth product of 340 GHz, the highest value for any APDs operating at 1,300 nm, and a sensitivity equivalent to commercially available III-V compound APDs is reported. The excellent performance paves the way to achieving low-cost, CMOS-based, Ge/Si APDs operating at data rates of 40 Gb s−1 or higher, where the performance of III-V APDs is severely limited.
