Growth Temperature

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Xin Wang - One of the best experts on this subject based on the ideXlab platform.

  • The influence of Growth Temperature on ZnO nanowires
    Materials Letters, 2008
    Co-Authors: Fang Fang, Delu Zhao, Junya Zhang, D.z. Shen, X.w. Fan, Xin Wang
    Abstract:

    ZnO nanowires have been successfully synthesized on Si(100) substrate by a simple physical vapor deposition method. Thin film ZnO layer used as the nucleation site can avoid the contamination from the metal catalysts, and it can also control the Growth direction of ZnO nanowires. Well-aligned ZnO nanowire arrays along the normal direction of the substrate can be obtained by controlling different Growth Temperature, which was demonstrated by XRD and FESEM analysis. A strong ultraviolet emission at room Temperature was observed in all ZnO nanostructures. In addition, the Growth mechanisms of the ZnO nanowires with different Growth Temperature is discussed in details.

Sang Sub Kim - One of the best experts on this subject based on the ideXlab platform.

  • Effect of Growth Temperature on the ZnO nanowires prepared by thermal heating of Zn powders
    Current Applied Physics, 2010
    Co-Authors: Hyoun Woo Kim, Mesfin Abayneh Kebede, Hyo Sung Kim, Buddhudu Srinivasa, Doo Young Kim, Jae Young Park, Sang Sub Kim
    Abstract:

    ZnO nanowires have been synthesized by heating Zn powders under nitrogen (N2) gas atmosphere. The influence of the Growth Temperature on the morphology, structure, and photoluminescence (PL) properties of ZnO nanowires has been investigated. At the higher-Temperature Growth process, thinner nanowires have been obtained. Interestingly, it is observed that the variation of Growth Temperature has significantly affected the photoluminescence spectra of the ZnO nanowires, showing an enhancement in the relative intensity of the green to UV emission bands with the increase of the Growth Temperature. In addition, the oxygen sensing properties of the as-synthesized ZnO nanowires were tested.

V Jacques - One of the best experts on this subject based on the ideXlab platform.

  • optimizing synthetic diamond samples for quantum sensing technologies by tuning the Growth Temperature
    Diamond and Related Materials, 2019
    Co-Authors: S Chouaieb, L J Martinez, W Akhta, I Robertphilip, A Dreau, Ovidiu Inza, J Achard, Alexandre Tallaire, V Jacques
    Abstract:

    Abstract Control of the crystalline orientation of nitrogen-vacancy (NV) defects in diamond is here demonstrated by tuning the Temperature of chemical vapor deposition (CVD) Growth on a (113)-oriented diamond substrate. We show that preferential alignment of NV defects along the [111] axis is improved when the CVD Growth Temperature is decreased, leading to 79% preferential orientation at 800∘C, as compared to only 47.5% at 1000∘C. This effect is then combined with Temperature-dependent incorporation of NV defects during the CVD Growth to obtain preferential alignment over dense ensembles of NV defects spatially localized in thin diamond layers. These results demonstrate that Growth Temperature can be exploited as an additional degree of freedom to engineer optimized diamond samples for quantum sensing applications.

  • optimizing synthetic diamond samples for quantum sensing technologies by tuning the Growth Temperature
    arXiv: Materials Science, 2018
    Co-Authors: S Chouaieb, L J Martinez, W Akhta, I Robertphilip, A Dreau, Ovidiu Inza, J Achard, Alexandre Tallaire, V Jacques
    Abstract:

    Control of the crystalline orientation of nitrogen-vacancy (NV) defects in diamond is here demonstrated by tuning the Temperature of chemical vapor deposition (CVD) Growth on a (113)-oriented diamond substrate. We show that preferential alignment of NV defects along the [111] axis is significantly improved when the CVD Growth Temperature is decreased. This effect is then combined with Temperature-dependent incorporation of NV defects during the CVD Growth to obtain preferential alignment over dense ensembles of NV defects spatially localized in thin diamond layers. These results demonstrate that Growth Temperature can be exploited as an additional degree of freedom to engineer optimized diamond samples for quantum sensing applications.

L J Martinez - One of the best experts on this subject based on the ideXlab platform.

  • optimizing synthetic diamond samples for quantum sensing technologies by tuning the Growth Temperature
    Diamond and Related Materials, 2019
    Co-Authors: S Chouaieb, L J Martinez, W Akhta, I Robertphilip, A Dreau, Ovidiu Inza, J Achard, Alexandre Tallaire, V Jacques
    Abstract:

    Abstract Control of the crystalline orientation of nitrogen-vacancy (NV) defects in diamond is here demonstrated by tuning the Temperature of chemical vapor deposition (CVD) Growth on a (113)-oriented diamond substrate. We show that preferential alignment of NV defects along the [111] axis is improved when the CVD Growth Temperature is decreased, leading to 79% preferential orientation at 800∘C, as compared to only 47.5% at 1000∘C. This effect is then combined with Temperature-dependent incorporation of NV defects during the CVD Growth to obtain preferential alignment over dense ensembles of NV defects spatially localized in thin diamond layers. These results demonstrate that Growth Temperature can be exploited as an additional degree of freedom to engineer optimized diamond samples for quantum sensing applications.

  • optimizing synthetic diamond samples for quantum sensing technologies by tuning the Growth Temperature
    arXiv: Materials Science, 2018
    Co-Authors: S Chouaieb, L J Martinez, W Akhta, I Robertphilip, A Dreau, Ovidiu Inza, J Achard, Alexandre Tallaire, V Jacques
    Abstract:

    Control of the crystalline orientation of nitrogen-vacancy (NV) defects in diamond is here demonstrated by tuning the Temperature of chemical vapor deposition (CVD) Growth on a (113)-oriented diamond substrate. We show that preferential alignment of NV defects along the [111] axis is significantly improved when the CVD Growth Temperature is decreased. This effect is then combined with Temperature-dependent incorporation of NV defects during the CVD Growth to obtain preferential alignment over dense ensembles of NV defects spatially localized in thin diamond layers. These results demonstrate that Growth Temperature can be exploited as an additional degree of freedom to engineer optimized diamond samples for quantum sensing applications.

Fang Fang - One of the best experts on this subject based on the ideXlab platform.

  • The influence of Growth Temperature on ZnO nanowires
    Materials Letters, 2008
    Co-Authors: Fang Fang, Delu Zhao, Junya Zhang, D.z. Shen, X.w. Fan, Xin Wang
    Abstract:

    ZnO nanowires have been successfully synthesized on Si(100) substrate by a simple physical vapor deposition method. Thin film ZnO layer used as the nucleation site can avoid the contamination from the metal catalysts, and it can also control the Growth direction of ZnO nanowires. Well-aligned ZnO nanowire arrays along the normal direction of the substrate can be obtained by controlling different Growth Temperature, which was demonstrated by XRD and FESEM analysis. A strong ultraviolet emission at room Temperature was observed in all ZnO nanostructures. In addition, the Growth mechanisms of the ZnO nanowires with different Growth Temperature is discussed in details.