The Experts below are selected from a list of 217305 Experts worldwide ranked by ideXlab platform
Jing Liu - One of the best experts on this subject based on the ideXlab platform.
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Gate-Tunable Photodetection/Voltaic Device Based on BP/MoTe2 Heterostructure
ACS applied materials & interfaces, 2019Co-Authors: Yuan Xie, Jing Zhang, Daihua Zhang, Jing LiuAbstract:van der Waals Heterostructures based on two-dimensional (2D) materials have attracted tremendous attention for their potential applications in optoelectronic devices, such as solar cells and photodetectors. In addition, the widely tunable Fermi levels of these atomically thin 2D materials enable tuning the device performances/functions dynamically. Herein, we demonstrated a MoTe2/BP heterostructure, which can be dynamically tuned to be either p-n or p-p junction by gate modulation due to compatible band structures and electrically tunable Fermi levels of MoTe2 and BP. Consequently, the electrostatic gating can further accurately control the photoresponse of this heterostructure in terms of the polarity and the value of photoresponsivity. Besides, the heterostructure showed outstanding photodetection/voltaic performances. The optimum photoresponsivity, external quantum efficiency, and response time as a photodetector were 0.2 A/W, 48.1%, and 2 ms, respectively. Our study enhances the understanding of 2D Heterostructures for designing gate-tunable devices and reveals promising potentials of these devices in future optoelectronic applications.
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gate tunable photodetection voltaic device based on bp mote2 heterostructure
ACS Applied Materials & Interfaces, 2019Co-Authors: Yuan Xie, Jing Zhang, Daihua Zhang, Jing LiuAbstract:van der Waals Heterostructures based on two-dimensional (2D) materials have attracted tremendous attention for their potential applications in optoelectronic devices, such as solar cells and photodetectors. In addition, the widely tunable Fermi levels of these atomically thin 2D materials enable tuning the device performances/functions dynamically. Herein, we demonstrated a MoTe2/BP heterostructure, which can be dynamically tuned to be either p-n or p-p junction by gate modulation due to compatible band structures and electrically tunable Fermi levels of MoTe2 and BP. Consequently, the electrostatic gating can further accurately control the photoresponse of this heterostructure in terms of the polarity and the value of photoresponsivity. Besides, the heterostructure showed outstanding photodetection/voltaic performances. The optimum photoresponsivity, external quantum efficiency, and response time as a photodetector were 0.2 A/W, 48.1%, and 2 ms, respectively. Our study enhances the understanding of 2D Heterostructures for designing gate-tunable devices and reveals promising potentials of these devices in future optoelectronic applications.
Jung Inn Sohn - One of the best experts on this subject based on the ideXlab platform.
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resonantly hybridized excitons in moire superlattices in van der waals Heterostructures
Nature, 2019Co-Authors: Evgeny M Alexeev, David A Ruiztijerina, Mark Danovich, Matthew J Hamer, Daniel Terry, Pramoda K Nayak, Jung Inn SohnAbstract:Atomically thin layers of two-dimensional materials can be assembled in vertical stacks that are held together by relatively weak van der Waals forces, enabling coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation1,2. Consequently, an overarching periodicity emerges in the local atomic registry of the constituent crystal structures, which is known as a moire superlattice3. In graphene/hexagonal boron nitride structures4, the presence of a moire superlattice can lead to the observation of electronic minibands5–7, whereas in twisted graphene bilayers its effects are enhanced by interlayer resonant conditions, resulting in a superconductor–insulator transition at magic twist angles8. Here, using semiconducting Heterostructures assembled from incommensurate molybdenum diselenide (MoSe2) and tungsten disulfide (WS2) monolayers, we demonstrate that excitonic bands can hybridize, resulting in a resonant enhancement of moire superlattice effects. MoSe2 and WS2 were chosen for the near-degeneracy of their conduction-band edges, in order to promote the hybridization of intra- and interlayer excitons. Hybridization manifests through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle, which occurs as hybridized excitons are formed by holes that reside in MoSe2 binding to a twist-dependent superposition of electron states in the adjacent monolayers. For Heterostructures in which the monolayer pairs are nearly aligned, resonant mixing of the electron states leads to pronounced effects of the geometrical moire pattern of the heterostructure on the dispersion and optical spectra of the hybridized excitons. Our findings underpin strategies for band-structure engineering in semiconductor devices based on van der Waals Heterostructures9. Excitonic bands in MoSe2/WS2 Heterostructures can hybridize, resulting in a resonant enhancement of moire superlattice effects.
Peng Zhou - One of the best experts on this subject based on the ideXlab platform.
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Van der Waals Heterostructure Based Field Effect Transistor Application
Crystals, 2017Co-Authors: Jingyu Li, Xiaozhang Chen, David Wei Zhang, Peng ZhouAbstract:Van der Waals heterostructure is formed by two-dimensional materials, which applications have become hot topics and received intensive exploration for fabricating without lattice mismatch. With the sustained decrease in dimensions of field effect transistors, van der Waals heterostructure plays an important role in improving the performance of devices because of its prominent electronic and optoelectronic behavior. In this review, we discuss the process of assembling van der Waals Heterostructures and thoroughly illustrate the applications based on van der Waals Heterostructures. We also present recent innovation in field effect transistors and van der Waals stacks, and offer an outlook of the development in improving the performance of devices based on van der Waals Heterostructures.
David A Ruiztijerina - One of the best experts on this subject based on the ideXlab platform.
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resonantly hybridized excitons in moire superlattices in van der waals Heterostructures
Nature, 2019Co-Authors: Evgeny M Alexeev, David A Ruiztijerina, Mark Danovich, Matthew J Hamer, Daniel Terry, Pramoda K Nayak, Jung Inn SohnAbstract:Atomically thin layers of two-dimensional materials can be assembled in vertical stacks that are held together by relatively weak van der Waals forces, enabling coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation1,2. Consequently, an overarching periodicity emerges in the local atomic registry of the constituent crystal structures, which is known as a moire superlattice3. In graphene/hexagonal boron nitride structures4, the presence of a moire superlattice can lead to the observation of electronic minibands5–7, whereas in twisted graphene bilayers its effects are enhanced by interlayer resonant conditions, resulting in a superconductor–insulator transition at magic twist angles8. Here, using semiconducting Heterostructures assembled from incommensurate molybdenum diselenide (MoSe2) and tungsten disulfide (WS2) monolayers, we demonstrate that excitonic bands can hybridize, resulting in a resonant enhancement of moire superlattice effects. MoSe2 and WS2 were chosen for the near-degeneracy of their conduction-band edges, in order to promote the hybridization of intra- and interlayer excitons. Hybridization manifests through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle, which occurs as hybridized excitons are formed by holes that reside in MoSe2 binding to a twist-dependent superposition of electron states in the adjacent monolayers. For Heterostructures in which the monolayer pairs are nearly aligned, resonant mixing of the electron states leads to pronounced effects of the geometrical moire pattern of the heterostructure on the dispersion and optical spectra of the hybridized excitons. Our findings underpin strategies for band-structure engineering in semiconductor devices based on van der Waals Heterostructures9. Excitonic bands in MoSe2/WS2 Heterostructures can hybridize, resulting in a resonant enhancement of moire superlattice effects.
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resonantly hybridized excitons in moire superlattices in van der waals Heterostructures
Nature, 2019Co-Authors: Evgeny M Alexeev, David A Ruiztijerina, Mark Danovich, Matthew J Hamer, Pramoda K Nayak, Daniel J Terry, Seongjoon Ahn, Sangyeon PakAbstract:Atomically thin layers of two-dimensional materials can be assembled in vertical stacks that are held together by relatively weak van der Waals forces, enabling coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation1,2. Consequently, an overarching periodicity emerges in the local atomic registry of the constituent crystal structures, which is known as a moire superlattice3. In graphene/hexagonal boron nitride structures4, the presence of a moire superlattice can lead to the observation of electronic minibands5-7, whereas in twisted graphene bilayers its effects are enhanced by interlayer resonant conditions, resulting in a superconductor-insulator transition at magic twist angles8. Here, using semiconducting Heterostructures assembled from incommensurate molybdenum diselenide (MoSe2) and tungsten disulfide (WS2) monolayers, we demonstrate that excitonic bands can hybridize, resulting in a resonant enhancement of moire superlattice effects. MoSe2 and WS2 were chosen for the near-degeneracy of their conduction-band edges, in order to promote the hybridization of intra- and interlayer excitons. Hybridization manifests through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle, which occurs as hybridized excitons are formed by holes that reside in MoSe2 binding to a twist-dependent superposition of electron states in the adjacent monolayers. For Heterostructures in which the monolayer pairs are nearly aligned, resonant mixing of the electron states leads to pronounced effects of the geometrical moire pattern of the heterostructure on the dispersion and optical spectra of the hybridized excitons. Our findings underpin strategies for band-structure engineering in semiconductor devices based on van der Waals Heterostructures9.
Pramoda K Nayak - One of the best experts on this subject based on the ideXlab platform.
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resonantly hybridized excitons in moire superlattices in van der waals Heterostructures
Nature, 2019Co-Authors: Evgeny M Alexeev, David A Ruiztijerina, Mark Danovich, Matthew J Hamer, Daniel Terry, Pramoda K Nayak, Jung Inn SohnAbstract:Atomically thin layers of two-dimensional materials can be assembled in vertical stacks that are held together by relatively weak van der Waals forces, enabling coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation1,2. Consequently, an overarching periodicity emerges in the local atomic registry of the constituent crystal structures, which is known as a moire superlattice3. In graphene/hexagonal boron nitride structures4, the presence of a moire superlattice can lead to the observation of electronic minibands5–7, whereas in twisted graphene bilayers its effects are enhanced by interlayer resonant conditions, resulting in a superconductor–insulator transition at magic twist angles8. Here, using semiconducting Heterostructures assembled from incommensurate molybdenum diselenide (MoSe2) and tungsten disulfide (WS2) monolayers, we demonstrate that excitonic bands can hybridize, resulting in a resonant enhancement of moire superlattice effects. MoSe2 and WS2 were chosen for the near-degeneracy of their conduction-band edges, in order to promote the hybridization of intra- and interlayer excitons. Hybridization manifests through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle, which occurs as hybridized excitons are formed by holes that reside in MoSe2 binding to a twist-dependent superposition of electron states in the adjacent monolayers. For Heterostructures in which the monolayer pairs are nearly aligned, resonant mixing of the electron states leads to pronounced effects of the geometrical moire pattern of the heterostructure on the dispersion and optical spectra of the hybridized excitons. Our findings underpin strategies for band-structure engineering in semiconductor devices based on van der Waals Heterostructures9. Excitonic bands in MoSe2/WS2 Heterostructures can hybridize, resulting in a resonant enhancement of moire superlattice effects.
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resonantly hybridized excitons in moire superlattices in van der waals Heterostructures
Nature, 2019Co-Authors: Evgeny M Alexeev, David A Ruiztijerina, Mark Danovich, Matthew J Hamer, Pramoda K Nayak, Daniel J Terry, Seongjoon Ahn, Sangyeon PakAbstract:Atomically thin layers of two-dimensional materials can be assembled in vertical stacks that are held together by relatively weak van der Waals forces, enabling coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation1,2. Consequently, an overarching periodicity emerges in the local atomic registry of the constituent crystal structures, which is known as a moire superlattice3. In graphene/hexagonal boron nitride structures4, the presence of a moire superlattice can lead to the observation of electronic minibands5-7, whereas in twisted graphene bilayers its effects are enhanced by interlayer resonant conditions, resulting in a superconductor-insulator transition at magic twist angles8. Here, using semiconducting Heterostructures assembled from incommensurate molybdenum diselenide (MoSe2) and tungsten disulfide (WS2) monolayers, we demonstrate that excitonic bands can hybridize, resulting in a resonant enhancement of moire superlattice effects. MoSe2 and WS2 were chosen for the near-degeneracy of their conduction-band edges, in order to promote the hybridization of intra- and interlayer excitons. Hybridization manifests through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle, which occurs as hybridized excitons are formed by holes that reside in MoSe2 binding to a twist-dependent superposition of electron states in the adjacent monolayers. For Heterostructures in which the monolayer pairs are nearly aligned, resonant mixing of the electron states leads to pronounced effects of the geometrical moire pattern of the heterostructure on the dispersion and optical spectra of the hybridized excitons. Our findings underpin strategies for band-structure engineering in semiconductor devices based on van der Waals Heterostructures9.
