The Experts below are selected from a list of 294 Experts worldwide ranked by ideXlab platform
Hiroyuki Matsunami - One of the best experts on this subject based on the ideXlab platform.
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in situ reflection High Energy Electron diffraction observation of laser triggered gap growth in chemical beam epitaxy
Journal of Crystal Growth, 1994Co-Authors: Masahiro Yoshimoto, Pablo O. Vaccaro, Tadao Hashimoto, Hiroyuki MatsunamiAbstract:Surface reaction triggered by N2 laser irradiation onto adsorbed triethylgallium (TEGa) and reaction with phosphorus in chemical beam epitaxy (CBE) was studied by growth experiment and intensity change of reflection High-Energy Electron diffraction (RHEED). The growth rate shows saturation with a High TEGa supply, which suggests that the adsorption of TEGa on a surface is saturated. The change of RHEED oscillation was different from that of a continuous reaction. The result showed that the decomposition of TEGa and formation of GaP occur alternately under continuous supply of TEGa and PH3.
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model for reflection High Energy Electron diffraction intensity recovery during gap growth in laser triggered chemical beam epitaxy
Applied Physics Letters, 1993Co-Authors: Pablo O. Vaccaro, Tadao Hashimoto, Masahiro Yoshimoto, Hiroyuki MatsunamiAbstract:Reflection High‐Energy Electron diffraction (RHEED) intensity has been observed while growing GaP by laser‐triggered chemical beam epitaxy simultaneously using a supply of triethylgallium (TEGa) and phosphine (PH3). The intensity decreases after each laser pulse, and then it recovers the original value. We present a semiquantitative model in order to explain the RHEED intensity changes. We assume that initially a GaP surface is saturated with chemisorbed diethylgallium (DEGa) and physisorbed TEGa. Laser irradiation decomposes a fraction of chemisorbed DEGa, and it reacts slowly with impinging P. TEGa is quickly chemisorbed on the just‐reacted GaP and the initial condition is recovered. This model properly fits the experimental data and it allows a deeper understanding of chemical reactions on the surface during chemical beam epitaxial growth of GaP.
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Model for reflection High‐Energy Electron diffraction intensity recovery during GaP growth in laser‐triggered chemical beam epitaxy
Applied Physics Letters, 1993Co-Authors: Pablo O. Vaccaro, Tadao Hashimoto, Masahiro Yoshimoto, Hiroyuki MatsunamiAbstract:Reflection High‐Energy Electron diffraction (RHEED) intensity has been observed while growing GaP by laser‐triggered chemical beam epitaxy simultaneously using a supply of triethylgallium (TEGa) and phosphine (PH3). The intensity decreases after each laser pulse, and then it recovers the original value. We present a semiquantitative model in order to explain the RHEED intensity changes. We assume that initially a GaP surface is saturated with chemisorbed diethylgallium (DEGa) and physisorbed TEGa. Laser irradiation decomposes a fraction of chemisorbed DEGa, and it reacts slowly with impinging P. TEGa is quickly chemisorbed on the just‐reacted GaP and the initial condition is recovered. This model properly fits the experimental data and it allows a deeper understanding of chemical reactions on the surface during chemical beam epitaxial growth of GaP.
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Reflection High‐Energy Electron diffraction observation of surface reaction triggered by pulsed laser irradiation during GaP growth in chemical beam epitaxy
Applied Physics Letters, 1993Co-Authors: Tadao Hashimoto, Pablo O. Vaccaro, Masahiro Yoshimoto, Hiroyuki MatsunamiAbstract:Surface reaction triggered by pulsed laser irradiation in chemical beam epitaxy (CBE) for GaP growth using triethylgallium (TEGa) and PH3 was studied with reflection High‐Energy Electron diffraction (RHEED). The intensity of RHEED showed an abrupt decrease on the irradiating laser followed by gradual recovery, and this change of intensity was different from that in usual CBE growth. The intensity recovery had considerable dependence on the PH3 flow rate, which indicates that the intensity recovery is related to the surface reaction between Ga atoms generated by laser irradiation and P atoms. This result showed that the decomposition of TEGa by laser irradiation and the formation of GaP occur alternately under continuous supply of source gases.
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reflection High Energy Electron diffraction observation of surface reaction triggered by pulsed laser irradiation during gap growth in chemical beam epitaxy
Applied Physics Letters, 1993Co-Authors: Tadao Hashimoto, Pablo O. Vaccaro, Masahiro Yoshimoto, Hiroyuki MatsunamiAbstract:Surface reaction triggered by pulsed laser irradiation in chemical beam epitaxy (CBE) for GaP growth using triethylgallium (TEGa) and PH3 was studied with reflection High‐Energy Electron diffraction (RHEED). The intensity of RHEED showed an abrupt decrease on the irradiating laser followed by gradual recovery, and this change of intensity was different from that in usual CBE growth. The intensity recovery had considerable dependence on the PH3 flow rate, which indicates that the intensity recovery is related to the surface reaction between Ga atoms generated by laser irradiation and P atoms. This result showed that the decomposition of TEGa by laser irradiation and the formation of GaP occur alternately under continuous supply of source gases.
Tadao Hashimoto - One of the best experts on this subject based on the ideXlab platform.
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in situ reflection High Energy Electron diffraction observation of laser triggered gap growth in chemical beam epitaxy
Journal of Crystal Growth, 1994Co-Authors: Masahiro Yoshimoto, Pablo O. Vaccaro, Tadao Hashimoto, Hiroyuki MatsunamiAbstract:Surface reaction triggered by N2 laser irradiation onto adsorbed triethylgallium (TEGa) and reaction with phosphorus in chemical beam epitaxy (CBE) was studied by growth experiment and intensity change of reflection High-Energy Electron diffraction (RHEED). The growth rate shows saturation with a High TEGa supply, which suggests that the adsorption of TEGa on a surface is saturated. The change of RHEED oscillation was different from that of a continuous reaction. The result showed that the decomposition of TEGa and formation of GaP occur alternately under continuous supply of TEGa and PH3.
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model for reflection High Energy Electron diffraction intensity recovery during gap growth in laser triggered chemical beam epitaxy
Applied Physics Letters, 1993Co-Authors: Pablo O. Vaccaro, Tadao Hashimoto, Masahiro Yoshimoto, Hiroyuki MatsunamiAbstract:Reflection High‐Energy Electron diffraction (RHEED) intensity has been observed while growing GaP by laser‐triggered chemical beam epitaxy simultaneously using a supply of triethylgallium (TEGa) and phosphine (PH3). The intensity decreases after each laser pulse, and then it recovers the original value. We present a semiquantitative model in order to explain the RHEED intensity changes. We assume that initially a GaP surface is saturated with chemisorbed diethylgallium (DEGa) and physisorbed TEGa. Laser irradiation decomposes a fraction of chemisorbed DEGa, and it reacts slowly with impinging P. TEGa is quickly chemisorbed on the just‐reacted GaP and the initial condition is recovered. This model properly fits the experimental data and it allows a deeper understanding of chemical reactions on the surface during chemical beam epitaxial growth of GaP.
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Model for reflection High‐Energy Electron diffraction intensity recovery during GaP growth in laser‐triggered chemical beam epitaxy
Applied Physics Letters, 1993Co-Authors: Pablo O. Vaccaro, Tadao Hashimoto, Masahiro Yoshimoto, Hiroyuki MatsunamiAbstract:Reflection High‐Energy Electron diffraction (RHEED) intensity has been observed while growing GaP by laser‐triggered chemical beam epitaxy simultaneously using a supply of triethylgallium (TEGa) and phosphine (PH3). The intensity decreases after each laser pulse, and then it recovers the original value. We present a semiquantitative model in order to explain the RHEED intensity changes. We assume that initially a GaP surface is saturated with chemisorbed diethylgallium (DEGa) and physisorbed TEGa. Laser irradiation decomposes a fraction of chemisorbed DEGa, and it reacts slowly with impinging P. TEGa is quickly chemisorbed on the just‐reacted GaP and the initial condition is recovered. This model properly fits the experimental data and it allows a deeper understanding of chemical reactions on the surface during chemical beam epitaxial growth of GaP.
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Reflection High‐Energy Electron diffraction observation of surface reaction triggered by pulsed laser irradiation during GaP growth in chemical beam epitaxy
Applied Physics Letters, 1993Co-Authors: Tadao Hashimoto, Pablo O. Vaccaro, Masahiro Yoshimoto, Hiroyuki MatsunamiAbstract:Surface reaction triggered by pulsed laser irradiation in chemical beam epitaxy (CBE) for GaP growth using triethylgallium (TEGa) and PH3 was studied with reflection High‐Energy Electron diffraction (RHEED). The intensity of RHEED showed an abrupt decrease on the irradiating laser followed by gradual recovery, and this change of intensity was different from that in usual CBE growth. The intensity recovery had considerable dependence on the PH3 flow rate, which indicates that the intensity recovery is related to the surface reaction between Ga atoms generated by laser irradiation and P atoms. This result showed that the decomposition of TEGa by laser irradiation and the formation of GaP occur alternately under continuous supply of source gases.
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reflection High Energy Electron diffraction observation of surface reaction triggered by pulsed laser irradiation during gap growth in chemical beam epitaxy
Applied Physics Letters, 1993Co-Authors: Tadao Hashimoto, Pablo O. Vaccaro, Masahiro Yoshimoto, Hiroyuki MatsunamiAbstract:Surface reaction triggered by pulsed laser irradiation in chemical beam epitaxy (CBE) for GaP growth using triethylgallium (TEGa) and PH3 was studied with reflection High‐Energy Electron diffraction (RHEED). The intensity of RHEED showed an abrupt decrease on the irradiating laser followed by gradual recovery, and this change of intensity was different from that in usual CBE growth. The intensity recovery had considerable dependence on the PH3 flow rate, which indicates that the intensity recovery is related to the surface reaction between Ga atoms generated by laser irradiation and P atoms. This result showed that the decomposition of TEGa by laser irradiation and the formation of GaP occur alternately under continuous supply of source gases.
Pablo O. Vaccaro - One of the best experts on this subject based on the ideXlab platform.
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in situ reflection High Energy Electron diffraction observation of laser triggered gap growth in chemical beam epitaxy
Journal of Crystal Growth, 1994Co-Authors: Masahiro Yoshimoto, Pablo O. Vaccaro, Tadao Hashimoto, Hiroyuki MatsunamiAbstract:Surface reaction triggered by N2 laser irradiation onto adsorbed triethylgallium (TEGa) and reaction with phosphorus in chemical beam epitaxy (CBE) was studied by growth experiment and intensity change of reflection High-Energy Electron diffraction (RHEED). The growth rate shows saturation with a High TEGa supply, which suggests that the adsorption of TEGa on a surface is saturated. The change of RHEED oscillation was different from that of a continuous reaction. The result showed that the decomposition of TEGa and formation of GaP occur alternately under continuous supply of TEGa and PH3.
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model for reflection High Energy Electron diffraction intensity recovery during gap growth in laser triggered chemical beam epitaxy
Applied Physics Letters, 1993Co-Authors: Pablo O. Vaccaro, Tadao Hashimoto, Masahiro Yoshimoto, Hiroyuki MatsunamiAbstract:Reflection High‐Energy Electron diffraction (RHEED) intensity has been observed while growing GaP by laser‐triggered chemical beam epitaxy simultaneously using a supply of triethylgallium (TEGa) and phosphine (PH3). The intensity decreases after each laser pulse, and then it recovers the original value. We present a semiquantitative model in order to explain the RHEED intensity changes. We assume that initially a GaP surface is saturated with chemisorbed diethylgallium (DEGa) and physisorbed TEGa. Laser irradiation decomposes a fraction of chemisorbed DEGa, and it reacts slowly with impinging P. TEGa is quickly chemisorbed on the just‐reacted GaP and the initial condition is recovered. This model properly fits the experimental data and it allows a deeper understanding of chemical reactions on the surface during chemical beam epitaxial growth of GaP.
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Model for reflection High‐Energy Electron diffraction intensity recovery during GaP growth in laser‐triggered chemical beam epitaxy
Applied Physics Letters, 1993Co-Authors: Pablo O. Vaccaro, Tadao Hashimoto, Masahiro Yoshimoto, Hiroyuki MatsunamiAbstract:Reflection High‐Energy Electron diffraction (RHEED) intensity has been observed while growing GaP by laser‐triggered chemical beam epitaxy simultaneously using a supply of triethylgallium (TEGa) and phosphine (PH3). The intensity decreases after each laser pulse, and then it recovers the original value. We present a semiquantitative model in order to explain the RHEED intensity changes. We assume that initially a GaP surface is saturated with chemisorbed diethylgallium (DEGa) and physisorbed TEGa. Laser irradiation decomposes a fraction of chemisorbed DEGa, and it reacts slowly with impinging P. TEGa is quickly chemisorbed on the just‐reacted GaP and the initial condition is recovered. This model properly fits the experimental data and it allows a deeper understanding of chemical reactions on the surface during chemical beam epitaxial growth of GaP.
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Reflection High‐Energy Electron diffraction observation of surface reaction triggered by pulsed laser irradiation during GaP growth in chemical beam epitaxy
Applied Physics Letters, 1993Co-Authors: Tadao Hashimoto, Pablo O. Vaccaro, Masahiro Yoshimoto, Hiroyuki MatsunamiAbstract:Surface reaction triggered by pulsed laser irradiation in chemical beam epitaxy (CBE) for GaP growth using triethylgallium (TEGa) and PH3 was studied with reflection High‐Energy Electron diffraction (RHEED). The intensity of RHEED showed an abrupt decrease on the irradiating laser followed by gradual recovery, and this change of intensity was different from that in usual CBE growth. The intensity recovery had considerable dependence on the PH3 flow rate, which indicates that the intensity recovery is related to the surface reaction between Ga atoms generated by laser irradiation and P atoms. This result showed that the decomposition of TEGa by laser irradiation and the formation of GaP occur alternately under continuous supply of source gases.
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reflection High Energy Electron diffraction observation of surface reaction triggered by pulsed laser irradiation during gap growth in chemical beam epitaxy
Applied Physics Letters, 1993Co-Authors: Tadao Hashimoto, Pablo O. Vaccaro, Masahiro Yoshimoto, Hiroyuki MatsunamiAbstract:Surface reaction triggered by pulsed laser irradiation in chemical beam epitaxy (CBE) for GaP growth using triethylgallium (TEGa) and PH3 was studied with reflection High‐Energy Electron diffraction (RHEED). The intensity of RHEED showed an abrupt decrease on the irradiating laser followed by gradual recovery, and this change of intensity was different from that in usual CBE growth. The intensity recovery had considerable dependence on the PH3 flow rate, which indicates that the intensity recovery is related to the surface reaction between Ga atoms generated by laser irradiation and P atoms. This result showed that the decomposition of TEGa by laser irradiation and the formation of GaP occur alternately under continuous supply of source gases.
Masahiro Yoshimoto - One of the best experts on this subject based on the ideXlab platform.
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in situ reflection High Energy Electron diffraction observation of laser triggered gap growth in chemical beam epitaxy
Journal of Crystal Growth, 1994Co-Authors: Masahiro Yoshimoto, Pablo O. Vaccaro, Tadao Hashimoto, Hiroyuki MatsunamiAbstract:Surface reaction triggered by N2 laser irradiation onto adsorbed triethylgallium (TEGa) and reaction with phosphorus in chemical beam epitaxy (CBE) was studied by growth experiment and intensity change of reflection High-Energy Electron diffraction (RHEED). The growth rate shows saturation with a High TEGa supply, which suggests that the adsorption of TEGa on a surface is saturated. The change of RHEED oscillation was different from that of a continuous reaction. The result showed that the decomposition of TEGa and formation of GaP occur alternately under continuous supply of TEGa and PH3.
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model for reflection High Energy Electron diffraction intensity recovery during gap growth in laser triggered chemical beam epitaxy
Applied Physics Letters, 1993Co-Authors: Pablo O. Vaccaro, Tadao Hashimoto, Masahiro Yoshimoto, Hiroyuki MatsunamiAbstract:Reflection High‐Energy Electron diffraction (RHEED) intensity has been observed while growing GaP by laser‐triggered chemical beam epitaxy simultaneously using a supply of triethylgallium (TEGa) and phosphine (PH3). The intensity decreases after each laser pulse, and then it recovers the original value. We present a semiquantitative model in order to explain the RHEED intensity changes. We assume that initially a GaP surface is saturated with chemisorbed diethylgallium (DEGa) and physisorbed TEGa. Laser irradiation decomposes a fraction of chemisorbed DEGa, and it reacts slowly with impinging P. TEGa is quickly chemisorbed on the just‐reacted GaP and the initial condition is recovered. This model properly fits the experimental data and it allows a deeper understanding of chemical reactions on the surface during chemical beam epitaxial growth of GaP.
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Model for reflection High‐Energy Electron diffraction intensity recovery during GaP growth in laser‐triggered chemical beam epitaxy
Applied Physics Letters, 1993Co-Authors: Pablo O. Vaccaro, Tadao Hashimoto, Masahiro Yoshimoto, Hiroyuki MatsunamiAbstract:Reflection High‐Energy Electron diffraction (RHEED) intensity has been observed while growing GaP by laser‐triggered chemical beam epitaxy simultaneously using a supply of triethylgallium (TEGa) and phosphine (PH3). The intensity decreases after each laser pulse, and then it recovers the original value. We present a semiquantitative model in order to explain the RHEED intensity changes. We assume that initially a GaP surface is saturated with chemisorbed diethylgallium (DEGa) and physisorbed TEGa. Laser irradiation decomposes a fraction of chemisorbed DEGa, and it reacts slowly with impinging P. TEGa is quickly chemisorbed on the just‐reacted GaP and the initial condition is recovered. This model properly fits the experimental data and it allows a deeper understanding of chemical reactions on the surface during chemical beam epitaxial growth of GaP.
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Reflection High‐Energy Electron diffraction observation of surface reaction triggered by pulsed laser irradiation during GaP growth in chemical beam epitaxy
Applied Physics Letters, 1993Co-Authors: Tadao Hashimoto, Pablo O. Vaccaro, Masahiro Yoshimoto, Hiroyuki MatsunamiAbstract:Surface reaction triggered by pulsed laser irradiation in chemical beam epitaxy (CBE) for GaP growth using triethylgallium (TEGa) and PH3 was studied with reflection High‐Energy Electron diffraction (RHEED). The intensity of RHEED showed an abrupt decrease on the irradiating laser followed by gradual recovery, and this change of intensity was different from that in usual CBE growth. The intensity recovery had considerable dependence on the PH3 flow rate, which indicates that the intensity recovery is related to the surface reaction between Ga atoms generated by laser irradiation and P atoms. This result showed that the decomposition of TEGa by laser irradiation and the formation of GaP occur alternately under continuous supply of source gases.
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reflection High Energy Electron diffraction observation of surface reaction triggered by pulsed laser irradiation during gap growth in chemical beam epitaxy
Applied Physics Letters, 1993Co-Authors: Tadao Hashimoto, Pablo O. Vaccaro, Masahiro Yoshimoto, Hiroyuki MatsunamiAbstract:Surface reaction triggered by pulsed laser irradiation in chemical beam epitaxy (CBE) for GaP growth using triethylgallium (TEGa) and PH3 was studied with reflection High‐Energy Electron diffraction (RHEED). The intensity of RHEED showed an abrupt decrease on the irradiating laser followed by gradual recovery, and this change of intensity was different from that in usual CBE growth. The intensity recovery had considerable dependence on the PH3 flow rate, which indicates that the intensity recovery is related to the surface reaction between Ga atoms generated by laser irradiation and P atoms. This result showed that the decomposition of TEGa by laser irradiation and the formation of GaP occur alternately under continuous supply of source gases.
G Shanthi - One of the best experts on this subject based on the ideXlab platform.
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structural conformational and polarization changes of poly vinylidene fluoride trifluoroethylene copolymer induced by High Energy Electron irradiation
Macromolecules, 2000Co-Authors: G Shanthi, Q M Zhang, And V Bharti, T RamotowskiAbstract:Structural and molecular conformation changes of High-Energy Electron-irradiated poly(vinylidene fluoride−trifluoroethylene) 50/50 copolymer have been investigated by means of FT-IR spectroscopy, X-ray diffraction, and cross-linking density measurement and are compared with the change of polarization hysteresis loops with dose. Although in general the irradiation reduces the macroscopic polar ordering, which leads to the eventual disappearance of the remanent polarization in the copolymer at room temperature, the change in the mesoscopic structure and molecular conformation with dose is not monotonic. In the intermediate dose range, there is a reversal of the change of local ordering with dose, as revealed by the decrease of the fraction of the TG conformation in the copolymer and contraction of the lattice in directions perpendicular to the polymer chain with dose, which could be caused by the High cross-linking density due to irradiation. In addition, for irradiated polymers at doses above 30 Mrad, no t...
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polarization and structural properties of High Energy Electron irradiated poly vinylidene fluoride trifluoroethylene copolymer films
Journal of Applied Physics, 2000Co-Authors: Vivek Bharti, G Shanthi, Q M Zhang, Kuming LiangAbstract:The effect of High-Energy Electron irradiation on structural and polarization properties of 50/50 mol % copolymer of poly(vinylidene fluoride-trifluoroethylene) was investigated for both mechanically stretched and unstretched films. Although stretching can significantly enhance the polarization and dielectric responses in unirradiated films, it was observed that this enhancement was not significant in irradiated films. In addition, the polarization in both types of films after irradiation can be described quite well by a logarithmic mixing law of composites, which consist of crystallites embedded in an amorphous matrix with nearly the same fitting parameters. On the other hand, the enhancement of the mechanical properties from stretching persists after the irradiation, and the elastic modulus along the stretching direction remains High after irradiation in comparison with unstretched films. It was found that the dielectric dispersion in both types of films after irradiation fits well to the Vogel–Fulcher ...