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Sanjay Krishna - One of the best experts on this subject based on the ideXlab platform.
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High-Operating Temperature MWIR unipolar barrier photodetectors based on strained layer superlattices
Infrared Technology and Applications XLI, 2015Co-Authors: David A. Ramirez, Elena Plis, Stephen Myers, Christian P. Morath, Vincent M. Cowan, Sanjay KrishnaAbstract:The realization of High Operating Temperature (HOT) midwave infrared (MWIR) photodetectors would significantly relax the requirements imposed on the cooling system, which would lead to a reduction in the size, weight, and cost of the detection system. One of the most attractive material systems to develop HOT photodetectors is InAs/GaSb Type II Superlattice (T2SL). This is due the ability of T2SL materials to engineer the band structure of the device, which can be exploited to make devices with unipolar barriers. It has been shown that the use of unipolar barriers can dramatically reduce the dark current levels of the device, which is essential to realize HOT photodetectors. In this work, we report on the performance of a unipolar barrier mid wave infrared detector based on type-II InAs/GaSb strained layer superlattice for High Operating Temperatures. The device architecture is the double-barrier heterostructure, pBiBn design. Under an applied bias of -10 mV and an Operating Temperature of 200 K, the best performing devices show a dark current density of 4.9×10 -4 A/cm 2 . At 200 K, the measured zero-bias specific detectivity was 4.4×10 10 Jones.
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High Operating Temperature midwave infrared (MWIR) photodetectors based on type II InAs/GaSb strained layer superlattice
Nanophotonics and Macrophotonics for Space Environments VIII, 2014Co-Authors: David A. Ramirez, Elena Plis, Stephen Myers, Christian P. Morath, Vincent M. Cowan, Laura A. Treider, Eli A. Garduno, Sanjay KrishnaAbstract:Midwave infrared (MWIR) photodetectors that do not require cryogenic cooling would significantly reduce the complexity of the cooling system, which would lead to a reduction in the size, weight, and cost of the detection system. The key aspect to realize High Operating Temperature (HOT) photodetectors is to design device structures that exhibit significantly lower levels of dark current compared to the existing technologies. One of the most attractive material systems to develop HOT photodetectors is InAs/GaSb Type II Strained layer Superlattice (SLS). This is due the ability of Type II SLS materials to engineer the band structure of the device, which can be exploited to make devices with unipolar barriers. It has been shown that, compared to the traditional homojunction SLS devices, band-gap engineered unipolar barrier SLS devices can obtain significantly lower levels of dark current. In this work, we report on the design, growth, and fabrication of mid wave infrared detectors based on type-II InAs/GaSb strained layer superlattice for High Operating Temperatures. The device architecture is the double-barrier heterostructure, pBiBn design. Under an applied bias of -10 mV and an Operating Temperature of 200 K, the tested devices show a dark current density of 4 x 10-3 A/cm2 and a quantum efficiency of 27%. At 4.5 μm and 200 K, the devices show a zero-bias specific detectivity of 4.4 x 1010 Jones.
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High Operating Temperature interband cascade focal plane arrays
Applied Physics Letters, 2014Co-Authors: Zhaobing Tian, Sebastián E. Godoy, Ha Sul Kim, T. Schuler-sandy, John Montoya, Sanjay KrishnaAbstract:In this paper, we report the initial demonstration of mid-infrared interband cascade (IC) photodetector focal plane arrays with multiple-stage/junction design. The merits of IC photodetectors include low noise and efficient photocarrier extraction, even for zero-bias operation. By adopting enhanced electron barrier design and a total absorber thickness of 0.7 μm, the 5-stage IC detectors show very low dark current (1.10 × 10−7 A/cm2 at −5 mV and 150 K). Even with un-optimized fabrication and standard commercial (mis-matched) read-out circuit technology, infrared images are obtained by the 320 × 256 IC focal plane array up to 180 K with f/2.3 optics. The minimum noise equivalent Temperature difference of 28 mK is obtained at 120 K. These initial results indicate great potential of IC photodetectors, particularly for High Operating Temperature applications.
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High-Operating-Temperature MWIR detectors using type II superlattices
Infrared Remote Sensing and Instrumentation XXI, 2013Co-Authors: Zhaobing Tian, Sebastián E. Godoy, Ha Sul Kim, T. Schuler-sandy, Sanjay KrishnaAbstract:There is an increasing interest in the development of High Operating Temperature (HOT) detectors with InAs/Ga(In)Sb Type-II superlattice (T2-SL) material systems. A wide variety of unipolar barrier structures have been investigated and successfully implemented in low-noise device architectures. In this paper, some of our recent work on the development of HOT mid-IR (MWIR) T2-SL photodetectors with interband cascade schemes will be summarized. In these structures, the discrete InAs/GaSb SL absorbers are sandwiched between quantum-engineered electron and hole barriers, which facilitate photovoltaic operation and efficient photo-carrier extraction. Even at its initial stage of development, such an advanced design has led to the demonstration of mid-IR photodetectors with background-limited operation above 150 K (300 K, 2π field-of-view), as well as above room Temperature zero-bias operation. Further understanding of the device operation and design principles will also be discussed.
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High Operating Temperature interband cascade midwave infrared detector based on type ii inas gasb strained layer superlattice
Applied Physics Letters, 2012Co-Authors: N Gautam, Ajit V. Barve, S Myers, B Klein, E P G Smith, David R Rhiger, L R Dawson, Sanjay KrishnaAbstract:We report on an interband cascade mid-wave infrared (MWIR) detector based on type-II InAs/GaSb/AlSb strained layer superlattices (T2SL). The reported device has a seven-stage cascade region, each segment containing a MWIR absorber region, a graded T2SL transport region, and an interband tunneling region. Above room Temperature spectral response was observed, with a cutoff wavelength of 7 μm at 420 K. Detailed radiometric measurements yielded a Johnson noise limited detectivity of 3.0 × 1011 cmHz1/2W−1 (8.9 × 108 cmHz1/2W−1) and a dark current density of 3.6 × 10−7 A/cm−2 (7.3 × 10−3 A/cm−2) near zero bias with a 100% cutoff wavelength of 5.2 μm and 6.2 μm at 77 K (295 K), respectively, with an estimated 36.2% QE.
Manijeh Razeghi - One of the best experts on this subject based on the ideXlab platform.
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mid wavelength infrared High Operating Temperature pbn photodetectors based on type ii inas inassb superlattice
AIP Advances, 2020Co-Authors: Arash Dehzangi, Manijeh RazeghiAbstract:A High Operating Temperature mid-wavelength infrared pBn photodetector based on the type-II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated. At 150 K, the photodetector exhibits a peak responsivity of 1.48 A/W, corresponding to a quantum efficiency of 47% at −50 mV applied bias under front-side illumination, with a 50% cutoff wavelength of 4.4 µm. With an R × A of 12 783 Ω cm2 and a dark current density of 1.16 × 10−5 A/cm2 under −50 mV applied bias, the photodetector exhibits a specific detectivity of 7.1 × 1011 cm Hz1/2/W. At 300 K, the photodetector exhibits a dark current density of 0.44 A/cm2 and a quantum efficiency of 39%, resulting in a specific detectivity of 2.5 × 109 cm Hz1/2/W.
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Mid-wavelength infrared High Operating Temperature pBn photodetectors based on type-II InAs/InAsSb superlattice
AIP Advances, 2020Co-Authors: Arash Dehzangi, Manijeh RazeghiAbstract:A High Operating Temperature mid-wavelength infrared pBn photodetector based on the type-II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated. At 150 K, the photodetector exhibits a peak responsivity of 1.48 A/W, corresponding to a quantum efficiency of 47% at −50 mV applied bias under front-side illumination, with a 50% cutoff wavelength of 4.4 µm. With an R × A of 12 783 Ω cm2 and a dark current density of 1.16 × 10−5 A/cm2 under −50 mV applied bias, the photodetector exhibits a specific detectivity of 7.1 × 1011 cm Hz1/2/W. At 300 K, the photodetector exhibits a dark current density of 0.44 A/cm2 and a quantum efficiency of 39%, resulting in a specific detectivity of 2.5 × 109 cm Hz1/2/W.
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High Operating Temperature midwave infrared photodiodes and focal plane arrays based on type ii inas gasb superlattices
Applied Physics Letters, 2011Co-Authors: Abdollahi S Pour, Edward Kwei Wei Huang, G Chen, Abbas Haddadi, Binhminh Nguyen, Manijeh RazeghiAbstract:The dominant dark current mechanisms are identified and suppressed to improve the performance of midwave infrared InAs/GaSb type-II superlattice photodiodes at High Temperatures. The optimized heterojunction photodiode exhibits a quantum efficiency of 50% for 2 μm thick active region without any bias dependence. At 150 K, R0A of 5100 Ω cm2 and specific detectivity of 1.05×1012 cm Hz0.5/W are demonstrated for a 50% cutoff wavelength of 4.2μm. Assuming 300 K background Temperature and 2π field of view, the performance of the detector is background limited up to 180 K, which is improved by 25 °C compared to the homojunction photodiode. Infrared imaging using f/2.3 optics and an integration time of 10.02 ms demonstrates a noise equivalent Temperature difference of 11 mK at Operating Temperatures below 120 K.
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Quantum dot in a well infrared photodetectors for High Operating Temperature focal plane arrays
Quantum Dots Particles and Nanoclusters VI, 2009Co-Authors: S. Tsao, T. Yamanaka, S. Abdollahi Pour, I.-k. Park, Bijan Movaghar, Manijeh RazeghiAbstract:InAs quantum dots embedded in InGaAs quantum wells with InAlAs barriers on InP substrate grown by metalorganic chemical vapor deposition are utilized for High Operating Temperature detectors and focal plane arrays in the middle wavelength infrared. This dot-well combination is unique because the small band offset between the InAs dots and the InGaAs well leads to weak dot confinement of carriers. As a result, the device behavior differs significantly from that in the more common dot systems that have stronger confinement. Here, we present energy level modeling of our QD-QW system and apply these results to interpret the detector behavior. Detectors showed High performance with D* over 10 10 cmHz 1/2 /W at 150 K Operating Temperature and with High quantum efficiency over 50%. Focal plane arrays have been demonstrated Operating at High Temperature due to the low dark current observed in these devices.
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High Operating Temperature 320 256 middle wavelength infrared focal plane array imaging based on an inas ingaas inalas inp quantum dot infrared photodetector
Applied Physics Letters, 2007Co-Authors: S. Tsao, H Lim, W Zhang, Manijeh RazeghiAbstract:This letter reports a 320×256 middle-wavelength infrared focal plane array Operating at Temperatures up to 200K based on an InAs quantum dot/InGaAs quantum well/InAlAs barrier detector grown on InP substrate by low pressure metal organic chemical vapor deposition. The device’s low dark current density and the persistence of the photocurrent up to room Temperature enabled the High Temperature imaging. The focal plane array had a peak detection wavelength of 4μm, a responsivity of 34mA∕W, a conversion efficiency of 1.1%, and a noise equivalent Temperature difference of 344mK at an Operating Temperature of 120K.
Yilei Zhang - One of the best experts on this subject based on the ideXlab platform.
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High Operating Temperature pbn barrier mid wavelength infrared photodetectors and focal plane array based on inas inassb strained layer superlattices
Optics Express, 2020Co-Authors: Gongrong Deng, Dongqiong Chen, Shaopei Yang, Chaowei Yang, Jun Yuan, Wenyun Yang, Yilei ZhangAbstract:Improving the operation Temperature of the focal plane array (FPA) imagers is critical in meeting the demands to reduce the size, weight, and power (SWaP) for mid-infrared detection systems. In this work, we report the demonstration of a 15 µm-pitch 640×512 middle-format pBn FPA device with a 50% cutoff wavelength of 4.8 µm based on short period of InAs/InAsSb-based “Ga-free” type-II strained-layer superlattices, which achieves a High Operating Temperature (HOT) reaching 185 K. The pBn FPA exhibits a mean noise equivalent differential Temperature (NETD) of 39.5 mK and an operability of 99.6% by using f/2.0 optics for a 300 K background at 150 K. The mean quantum efficiency is 57.6% without antireflection coating and dark current density is 5.39×10−5 A/cm2 at an operation bias of −400 mV, by which the mean specific detectivity(D*) is calculated as High as 4.43×1011 cm.Hz½/W.
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High Operating Temperature pBn barrier mid-wavelength infrared photodetectors and focal plane array based on InAs/InAsSb strained layer superlattices.
Optics express, 2020Co-Authors: Gongrong Deng, Dongqiong Chen, Shaopei Yang, Chaowei Yang, Jun Yuan, Wenyun Yang, Yilei ZhangAbstract:Improving the operation Temperature of the focal plane array (FPA) imagers is critical in meeting the demands to reduce the size, weight, and power (SWaP) for mid-infrared detection systems. In this work, we report the demonstration of a 15 µm-pitch 640×512 middle-format pBn FPA device with a 50% cutoff wavelength of 4.8 µm based on short period of InAs/InAsSb-based “Ga-free” type-II strained-layer superlattices, which achieves a High Operating Temperature (HOT) reaching 185 K. The pBn FPA exhibits a mean noise equivalent differential Temperature (NETD) of 39.5 mK and an operability of 99.6% by using f/2.0 optics for a 300 K background at 150 K. The mean quantum efficiency is 57.6% without antireflection coating and dark current density is 5.39×10−5 A/cm2 at an operation bias of −400 mV, by which the mean specific detectivity(D*) is calculated as High as 4.43×1011 cm.Hz½/W.
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High Operating Temperature inassb based mid infrared focal plane array with a band aligned compound barrier
Applied Physics Letters, 2020Co-Authors: Gongrong Deng, Wenyun Yang, Peng Zhao, Yilei ZhangAbstract:In this work, by utilizing a band-aligned AlAs0.08Sb0.92/AlSb-based unipolar compound barrier design, a High-operability (∼99.7%) InAsSb bulk absorber-based mid-wavelength infrared 640 × 512 focal plane array (with a 50% cut-off wavelength at 4.1 μm at 150 K) exhibiting distinct infrared images from 150 K up to 205 K has been achieved, which suggests great potential for High operation Temperature detection applications. At 150 K and −400 mV bias, the photodetectors exhibit a low dark current density of ∼3.9 × 10−6 A∕cm2, a quantum efficiency of 65.1% at peak responsivity (∼3.8 μm), and a specific detectivity of 1.73 × 1012 Jones. From 150 to 185 K, the focal plane array exhibits ∼30.2 mK and ∼69.5 mK noise equivalent Temperature difference values by using f/2.0 optics and 6.45 ms and 0.61 ms integration times, respectively.In this work, by utilizing a band-aligned AlAs0.08Sb0.92/AlSb-based unipolar compound barrier design, a High-operability (∼99.7%) InAsSb bulk absorber-based mid-wavelength infrared 640 × 512 focal plane array (with a 50% cut-off wavelength at 4.1 μm at 150 K) exhibiting distinct infrared images from 150 K up to 205 K has been achieved, which suggests great potential for High operation Temperature detection applications. At 150 K and −400 mV bias, the photodetectors exhibit a low dark current density of ∼3.9 × 10−6 A∕cm2, a quantum efficiency of 65.1% at peak responsivity (∼3.8 μm), and a specific detectivity of 1.73 × 1012 Jones. From 150 to 185 K, the focal plane array exhibits ∼30.2 mK and ∼69.5 mK noise equivalent Temperature difference values by using f/2.0 optics and 6.45 ms and 0.61 ms integration times, respectively.
Larry K. Aagesen - One of the best experts on this subject based on the ideXlab platform.
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High-Operating-Temperature Direct Ink Writing of Mesoscale Eutectic Architectures
Advanced Materials, 2017Co-Authors: J. William Boley, Erik Hanson, Ashish Kulkarni, Thomas Joseph Ober, Wei-ting Chen, Jaewon Oh, Jinwoo Kim, Mohammadreza Khorasaninejad, Kundan Chaudhary, Larry K. AagesenAbstract:High-Operating-Temperature direct ink writing (HOT-DIW) of mesoscale architectures that are composed of eutectic silver chloride–potassium chloride. The molten ink undergoes directional solidification upon printing on a cold substrate. The lamellar spacing of the printed features can be varied between approximately 100 nm and 2 µm, enabling the manipulation of light in the visible and infrared range.
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High‐Operating‐Temperature Direct Ink Writing of Mesoscale Eutectic Architectures
Advanced materials (Deerfield Beach Fla.), 2016Co-Authors: J. William Boley, Erik Hanson, Ashish Kulkarni, Thomas Joseph Ober, Wei-ting Chen, Jinwoo Kim, Mohammadreza Khorasaninejad, Kundan Chaudhary, Larry K. AagesenAbstract:High-Operating-Temperature direct ink writing (HOT-DIW) of mesoscale architectures that are composed of eutectic silver chloride-potassium chloride. The molten ink undergoes directional solidification upon printing on a cold substrate. The lamellar spacing of the printed features can be varied between approximately 100 nm and 2 µm, enabling the manipulation of light in the visible and infrared range.
Gongrong Deng - One of the best experts on this subject based on the ideXlab platform.
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High Operating Temperature pbn barrier mid wavelength infrared photodetectors and focal plane array based on inas inassb strained layer superlattices
Optics Express, 2020Co-Authors: Gongrong Deng, Dongqiong Chen, Shaopei Yang, Chaowei Yang, Jun Yuan, Wenyun Yang, Yilei ZhangAbstract:Improving the operation Temperature of the focal plane array (FPA) imagers is critical in meeting the demands to reduce the size, weight, and power (SWaP) for mid-infrared detection systems. In this work, we report the demonstration of a 15 µm-pitch 640×512 middle-format pBn FPA device with a 50% cutoff wavelength of 4.8 µm based on short period of InAs/InAsSb-based “Ga-free” type-II strained-layer superlattices, which achieves a High Operating Temperature (HOT) reaching 185 K. The pBn FPA exhibits a mean noise equivalent differential Temperature (NETD) of 39.5 mK and an operability of 99.6% by using f/2.0 optics for a 300 K background at 150 K. The mean quantum efficiency is 57.6% without antireflection coating and dark current density is 5.39×10−5 A/cm2 at an operation bias of −400 mV, by which the mean specific detectivity(D*) is calculated as High as 4.43×1011 cm.Hz½/W.
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High Operating Temperature pBn barrier mid-wavelength infrared photodetectors and focal plane array based on InAs/InAsSb strained layer superlattices.
Optics express, 2020Co-Authors: Gongrong Deng, Dongqiong Chen, Shaopei Yang, Chaowei Yang, Jun Yuan, Wenyun Yang, Yilei ZhangAbstract:Improving the operation Temperature of the focal plane array (FPA) imagers is critical in meeting the demands to reduce the size, weight, and power (SWaP) for mid-infrared detection systems. In this work, we report the demonstration of a 15 µm-pitch 640×512 middle-format pBn FPA device with a 50% cutoff wavelength of 4.8 µm based on short period of InAs/InAsSb-based “Ga-free” type-II strained-layer superlattices, which achieves a High Operating Temperature (HOT) reaching 185 K. The pBn FPA exhibits a mean noise equivalent differential Temperature (NETD) of 39.5 mK and an operability of 99.6% by using f/2.0 optics for a 300 K background at 150 K. The mean quantum efficiency is 57.6% without antireflection coating and dark current density is 5.39×10−5 A/cm2 at an operation bias of −400 mV, by which the mean specific detectivity(D*) is calculated as High as 4.43×1011 cm.Hz½/W.
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High Operating Temperature inassb based mid infrared focal plane array with a band aligned compound barrier
Applied Physics Letters, 2020Co-Authors: Gongrong Deng, Wenyun Yang, Peng Zhao, Yilei ZhangAbstract:In this work, by utilizing a band-aligned AlAs0.08Sb0.92/AlSb-based unipolar compound barrier design, a High-operability (∼99.7%) InAsSb bulk absorber-based mid-wavelength infrared 640 × 512 focal plane array (with a 50% cut-off wavelength at 4.1 μm at 150 K) exhibiting distinct infrared images from 150 K up to 205 K has been achieved, which suggests great potential for High operation Temperature detection applications. At 150 K and −400 mV bias, the photodetectors exhibit a low dark current density of ∼3.9 × 10−6 A∕cm2, a quantum efficiency of 65.1% at peak responsivity (∼3.8 μm), and a specific detectivity of 1.73 × 1012 Jones. From 150 to 185 K, the focal plane array exhibits ∼30.2 mK and ∼69.5 mK noise equivalent Temperature difference values by using f/2.0 optics and 6.45 ms and 0.61 ms integration times, respectively.In this work, by utilizing a band-aligned AlAs0.08Sb0.92/AlSb-based unipolar compound barrier design, a High-operability (∼99.7%) InAsSb bulk absorber-based mid-wavelength infrared 640 × 512 focal plane array (with a 50% cut-off wavelength at 4.1 μm at 150 K) exhibiting distinct infrared images from 150 K up to 205 K has been achieved, which suggests great potential for High operation Temperature detection applications. At 150 K and −400 mV bias, the photodetectors exhibit a low dark current density of ∼3.9 × 10−6 A∕cm2, a quantum efficiency of 65.1% at peak responsivity (∼3.8 μm), and a specific detectivity of 1.73 × 1012 Jones. From 150 to 185 K, the focal plane array exhibits ∼30.2 mK and ∼69.5 mK noise equivalent Temperature difference values by using f/2.0 optics and 6.45 ms and 0.61 ms integration times, respectively.