The Experts below are selected from a list of 291 Experts worldwide ranked by ideXlab platform
R Degraeve - One of the best experts on this subject based on the ideXlab platform.
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Hole Trap generation in gate dielectric during substrate Hole injection
Semiconductor Science and Technology, 2004Co-Authors: J F Zhang, A H Chen, Cezhou Zhao, M J Uren, G Groeseneken, R DegraeveAbstract:Defect generation in dielectrics under electrical stress is an important reliability issue for microelectronic devices. Most recent attention has focused on the generation of interface states and electron Traps, while the creation of Hole Traps has rarely been reported. For example, there is hardly any information on the Hole Trap generation in oxynitrides and the generation under different temperatures has not been investigated. The objective of this work is to study the dependence of Hole Trap generation on temperature and nitridation. Based on new results, the role played by hydrogenous species in the generation is explored.
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Hole-Traps in silicon dioxides. Part II. Generation mechanism
IEEE Transactions on Electron Devices, 2004Co-Authors: C.z. Zhao, J F Zhang, G Groeseneken, R DegraeveAbstract:After studying the properties of Hole Traps in Part I, attention is turned to the physical processes responsible for generating Hole Traps in Part II of this work. The applicability of four models to Hole-Trap creation will be examined. These are the Trapped Hole-electron recombination model, the electrical field energy model, the Hole injection model, and the hydrogen model. To testify these models, stresses have to be carried out not only under substrate Hole injection (SHI), but also under Fowler-Nordheim injection (FNI). By combining FNI with SHI, we will be able to control Hole fluency independent of the electron-induced hydrogen release. This allows us to determine how important hydrogen is for Hole-Trap generation. Although it was reported that hydrogen could play a major role in positive charge generation for devices with an Al gate or without a gate, we will show that hydrogen does not dominate Hole-Trap generation, when poly-si gated devices are stressed under our test conditions. Unambiguous results will also be given to show that key predictions of the recombination model and the electrical field energy model are not observed here. In this paper, the most important process for Hole-Trap generation is found to be the direct interaction of injected Holes with the oxide.
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Generation of Hole Traps in silicon dioxides
Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548), 2001Co-Authors: J F Zhang, G Groeseneken, R DegraeveAbstract:Oxide breakdown is a potential showstopper for future CMOS technology. Defect generation is responsible for the breakdown. Previous work (Degraeve et al., 2000; Stathis and DiMaria, 1999; Zhang et al, 1992) was focused on electron Trap generation, while little information is available on Hole Trap generation. This paper unambiguously shows that a significant amount of Hole Traps can be created.
Jun Suda - One of the best experts on this subject based on the ideXlab platform.
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dual color sub bandgap light excited isothermal capacitance transient spectroscopy for quick measurement of carbon related Hole Trap density in n type gan
Japanese Journal of Applied Physics, 2020Co-Authors: Kazutaka Kanegae, Masahiro Horita, Tsunenobu Kimoto, Jun Suda, Tetsuo Narita, Kazuyoshi Tomita, Tetsu KachiAbstract:A quick method is proposed for measurement of the carbon-related Hole Trap (H1: +0.87 eV) density in an n-type GaN homoepitaxial layer using dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy. Shorter wavelength (390 nm) light irradiation is employed to cause the Hole Traps to be in the Hole-occupied state. Longer wavelength (660 nm) light irradiation is then used to emit the Hole from the Trap to the valence band. The photoemission of Holes is much quicker than the thermal emission, which reduces the measurement time. The Trap density can be calculated from the capacitance transient.
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accurate method for estimating Hole Trap concentration in n type gan via minority carrier transient spectroscopy
Applied Physics Express, 2018Co-Authors: Kazutaka Kanegae, Masahiro Horita, Tsunenobu Kimoto, Jun SudaAbstract:We propose an analysis method for the accurate estimation of the Hole Trap (H1, E V + 0.85 eV) concentration in n-type GaN via minority carrier transient spectroscopy (MCTS). The proposed method considers both the Hole occupation during a filling (current injection) period and the quick carrier recombination via the Hole Traps near the depletion layer edge immediately after a reverse bias is applied. The reverse bias voltage dependence of the MCTS spectrum indicates that an accurate Trap concentration, as well as the Hole diffusion length and electron capture cross section of the Hole Trap, can be determined.
J F Zhang - One of the best experts on this subject based on the ideXlab platform.
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Hole Trap generation in gate dielectric during substrate Hole injection
Semiconductor Science and Technology, 2004Co-Authors: J F Zhang, A H Chen, Cezhou Zhao, M J Uren, G Groeseneken, R DegraeveAbstract:Defect generation in dielectrics under electrical stress is an important reliability issue for microelectronic devices. Most recent attention has focused on the generation of interface states and electron Traps, while the creation of Hole Traps has rarely been reported. For example, there is hardly any information on the Hole Trap generation in oxynitrides and the generation under different temperatures has not been investigated. The objective of this work is to study the dependence of Hole Trap generation on temperature and nitridation. Based on new results, the role played by hydrogenous species in the generation is explored.
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Hole-Traps in silicon dioxides. Part II. Generation mechanism
IEEE Transactions on Electron Devices, 2004Co-Authors: C.z. Zhao, J F Zhang, G Groeseneken, R DegraeveAbstract:After studying the properties of Hole Traps in Part I, attention is turned to the physical processes responsible for generating Hole Traps in Part II of this work. The applicability of four models to Hole-Trap creation will be examined. These are the Trapped Hole-electron recombination model, the electrical field energy model, the Hole injection model, and the hydrogen model. To testify these models, stresses have to be carried out not only under substrate Hole injection (SHI), but also under Fowler-Nordheim injection (FNI). By combining FNI with SHI, we will be able to control Hole fluency independent of the electron-induced hydrogen release. This allows us to determine how important hydrogen is for Hole-Trap generation. Although it was reported that hydrogen could play a major role in positive charge generation for devices with an Al gate or without a gate, we will show that hydrogen does not dominate Hole-Trap generation, when poly-si gated devices are stressed under our test conditions. Unambiguous results will also be given to show that key predictions of the recombination model and the electrical field energy model are not observed here. In this paper, the most important process for Hole-Trap generation is found to be the direct interaction of injected Holes with the oxide.
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Generation of Hole Traps in silicon dioxides
Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548), 2001Co-Authors: J F Zhang, G Groeseneken, R DegraeveAbstract:Oxide breakdown is a potential showstopper for future CMOS technology. Defect generation is responsible for the breakdown. Previous work (Degraeve et al., 2000; Stathis and DiMaria, 1999; Zhang et al, 1992) was focused on electron Trap generation, while little information is available on Hole Trap generation. This paper unambiguously shows that a significant amount of Hole Traps can be created.
Can Li - One of the best experts on this subject based on the ideXlab platform.
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charge transfer dynamics promoted by Hole Trap states in cdse quantum dots ni2 photocatalytic system
Journal of Physical Chemistry C, 2017Co-Authors: Yun Ye, Xiuli Wang, Sheng Ye, Yuxing Xu, Zhaochi Feng, Can LiAbstract:Manipulation of the photoinduced Hole dynamics is a key strategy to improve the H2 evolution efficiency in quantum dots (QDs)-based photocatalytic systems. The ultrafast Hole Trapping by surface states of the QDs is beneficial to electron transfer but retards the Trapped Hole transfer. Whether ultrafast Hole Trapping is beneficial to the photocatalytic H2 evolution activity deserves to be investigated. We employed two types of CdSe QDs, QDs-1 and QDs-2, with tuned surface Hole Trap states to investigate the effect of ultrafast Hole Trapping on charge-transfer dynamics in the photocatalytic system. QDs-1 possesses higher density of surface Hole Trap states than QDs-2. Compared with QDs-2, the transfer dynamics of free electrons in QDs-1 to the proton reduction catalyst, Ni2+, is more promoted by Hole Trapping, characterized by the transient absorption spectroscopy and photoluminescence techniques. Interestingly, the free Hole transfer from QDs-1 to the sacrificial reagent, ascorbic acid (AA), was also impr...
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Charge-Transfer Dynamics Promoted by Hole Trap States in CdSe Quantum Dots–Ni2+ Photocatalytic System
Journal of Physical Chemistry C, 2017Co-Authors: Yun Ye, Xiuli Wang, Sheng Ye, Yuxing Xu, Zhaochi Feng, Can LiAbstract:Manipulation of the photoinduced Hole dynamics is a key strategy to improve the H2 evolution efficiency in quantum dots (QDs)-based photocatalytic systems. The ultrafast Hole Trapping by surface states of the QDs is beneficial to electron transfer but retards the Trapped Hole transfer. Whether ultrafast Hole Trapping is beneficial to the photocatalytic H2 evolution activity deserves to be investigated. We employed two types of CdSe QDs, QDs-1 and QDs-2, with tuned surface Hole Trap states to investigate the effect of ultrafast Hole Trapping on charge-transfer dynamics in the photocatalytic system. QDs-1 possesses higher density of surface Hole Trap states than QDs-2. Compared with QDs-2, the transfer dynamics of free electrons in QDs-1 to the proton reduction catalyst, Ni2+, is more promoted by Hole Trapping, characterized by the transient absorption spectroscopy and photoluminescence techniques. Interestingly, the free Hole transfer from QDs-1 to the sacrificial reagent, ascorbic acid (AA), was also impr...
L E Halliburton - One of the best experts on this subject based on the ideXlab platform.
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sn vacancies in photorefractive sn2p2s6 crystals an electron paramagnetic resonance study of an optically active Hole Trap
Journal of Applied Physics, 2016Co-Authors: E M Golden, S A Basun, Dean R Evans, Alexander A Grabar, I M Stoika, N C Giles, L E HalliburtonAbstract:Electron paramagnetic resonance (EPR) is used to identify the singly ionized charge state of the Sn vacancy ( VSn−) in single crystals of Sn2P2S6 (often referred to as SPS). These vacancies, acting as a Hole Trap, are expected to be important participants in the photorefractive effect observed in undoped SPS crystals. In as-grown crystals, the Sn vacancies are doubly ionized ( VSn2−) with no unpaired spins. They are then converted to a stable EPR-active state when an electron is removed (i.e., a Hole is Trapped) during an illumination below 100 K with 633 nm laser light. The resulting EPR spectrum has g-matrix principal values of 2.0079, 2.0231, and 1.9717. There are resolved hyperfine interactions with two P neighbors and one Sn neighbor. The isotropic portions of these hyperfine matrices are 167 and 79 MHz for the two 31P neighbors and 8504 MHz for the one Sn neighbor (this latter value is the average for 117Sn and 119Sn). These VSn− vacancies are shallow acceptors with the Hole occupying a diffuse wave...
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identification of silicon as the dominant Hole Trap in yvo4 crystals
Journal of Applied Physics, 2002Co-Authors: N Y Garces, L E Halliburton, K T Stevens, M Shone, G K FoundosAbstract:Electron paramagnetic resonance (EPR) and electron–nuclear double resonance (ENDOR) have been used to characterize the dominant Hole Trap in undoped Czochralski-grown yttrium–orthovanadate (YVO4) crystals. A silicon impurity, present inadvertently, replaces a vanadium ion and allows a Hole to be Trapped on one of the four adjacent oxygen ions. The unpaired spin resides in an oxygen p orbital oriented perpendicular to the plane defined by the silicon ion, the electron-deficient oxygen, and the two yttrium ions nearest the oxygen. Principal values of the g matrix (2.0033, 2.0090, and 2.0771) were obtained from EPR data taken at 15 K. Direct verification of the participation of silicon was obtained from ENDOR data taken at 12 K. We have found that this Trapped-Hole center appeared in large concentrations in all of our Czochralski-grown YVO4 crystals that were exposed to ionizing radiation (i.e., x rays or an ultraviolet laser beam) while the crystal was at 77 K. Interestingly, a small concentration of this t...