The Experts below are selected from a list of 147 Experts worldwide ranked by ideXlab platform
Masakiyo Matsumura - One of the best experts on this subject based on the ideXlab platform.
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Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride from Tetra-Silane and Hydrogen Azide
MRS Online Proceedings Library, 1992Co-Authors: Ryoichi Ishihara, Osamu Sugiura, Hiroshi Kanoh, Yasutaka Uchida, Masakiyo MatsumuraAbstract:Silicon nitride films have been successfully deposited at a temperature as low as 300°C by chemical-vapor-deposition using tctra-silane (Si_4H_10) and Hydrogen azidc (HN3). Atomic ratio (N/Si) of the film deposited at 400°C was 1.47, i.e., the film was N-rich. Total Hydrogen content was about 25atomic%. The breakdown-field strength was 6.5MV/cm at leakage-current density of 1μA/cm^2, and the low-field resistivity was more than 10^15Ωcm. Similar electrical characteristics were obtained from films deposited at a temperature range between 300°C and 500°C. Amorphous silicon thin-film transistors equipped with this film as the gate dielectric showed good transfer characteristics.
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Low‐temperature chemical vapor deposition of boron‐nitride films using Hydrogen Azide
Applied Physics Letters, 1992Co-Authors: Ryoichi Ishihara, Osamu Sugiura, Masakiyo MatsumuraAbstract:Stoichiometric boron‐nitride films have been successfully deposited at temperatures as low as 400 °C by chemical vapor deposition using diborane (B2H6) and Hydrogen Azide (HN3). The film deposited on the silicon substrate at 475 °C was amorphous and contained Hydrogen atoms with a density of 1.3×1022 cm−3. The breakdown field strength and the low‐field resistivity were 2.8 MV/cm and 1015 Ω cm, respectively. The optical and low‐frequency dielectric constants were 3.6 and 4.0, respectively. Metal‐insulator‐metal device equipped with this film showed steep current‐voltage characteristics.
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low temperature chemical vapor deposition of boron nitride films using Hydrogen Azide
Applied Physics Letters, 1992Co-Authors: Ryoichi Ishihara, Osamu Sugiura, Masakiyo MatsumuraAbstract:Stoichiometric boron‐nitride films have been successfully deposited at temperatures as low as 400 °C by chemical vapor deposition using diborane (B2H6) and Hydrogen Azide (HN3). The film deposited on the silicon substrate at 475 °C was amorphous and contained Hydrogen atoms with a density of 1.3×1022 cm−3. The breakdown field strength and the low‐field resistivity were 2.8 MV/cm and 1015 Ω cm, respectively. The optical and low‐frequency dielectric constants were 3.6 and 4.0, respectively. Metal‐insulator‐metal device equipped with this film showed steep current‐voltage characteristics.
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Low-Temperature Chemical Vapor Deposition of Silicon Nitride Using A New Source Gas : Hydrogen Azide
Japanese Journal of Applied Physics, 1992Co-Authors: Ryouichi Ishihara, Osamu Sugiura, Hiroshi Kanoh, Masakiyo MatsumuraAbstract:Silicon nitride films were deposited at temperatures as low as 350°C by chemical vapor deposition using a new source gas, Hydrogen Azide (HN3). Silicon nitride film deposited at 425°C was nitrogen-rich and showed Hydrogen content of about 28 atomic%. The breakdown field strength was as high as 8.7 MV/cm and the resistivity was as high as 1015 Ωcm. Amorphous silicon thin-film transistors equipped with this film as the gate dielectric showed good transistor characteristics.
Ryoichi Ishihara - One of the best experts on this subject based on the ideXlab platform.
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Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride from Tetra-Silane and Hydrogen Azide
MRS Online Proceedings Library, 1992Co-Authors: Ryoichi Ishihara, Osamu Sugiura, Hiroshi Kanoh, Yasutaka Uchida, Masakiyo MatsumuraAbstract:Silicon nitride films have been successfully deposited at a temperature as low as 300°C by chemical-vapor-deposition using tctra-silane (Si_4H_10) and Hydrogen azidc (HN3). Atomic ratio (N/Si) of the film deposited at 400°C was 1.47, i.e., the film was N-rich. Total Hydrogen content was about 25atomic%. The breakdown-field strength was 6.5MV/cm at leakage-current density of 1μA/cm^2, and the low-field resistivity was more than 10^15Ωcm. Similar electrical characteristics were obtained from films deposited at a temperature range between 300°C and 500°C. Amorphous silicon thin-film transistors equipped with this film as the gate dielectric showed good transfer characteristics.
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Low‐temperature chemical vapor deposition of boron‐nitride films using Hydrogen Azide
Applied Physics Letters, 1992Co-Authors: Ryoichi Ishihara, Osamu Sugiura, Masakiyo MatsumuraAbstract:Stoichiometric boron‐nitride films have been successfully deposited at temperatures as low as 400 °C by chemical vapor deposition using diborane (B2H6) and Hydrogen Azide (HN3). The film deposited on the silicon substrate at 475 °C was amorphous and contained Hydrogen atoms with a density of 1.3×1022 cm−3. The breakdown field strength and the low‐field resistivity were 2.8 MV/cm and 1015 Ω cm, respectively. The optical and low‐frequency dielectric constants were 3.6 and 4.0, respectively. Metal‐insulator‐metal device equipped with this film showed steep current‐voltage characteristics.
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low temperature chemical vapor deposition of boron nitride films using Hydrogen Azide
Applied Physics Letters, 1992Co-Authors: Ryoichi Ishihara, Osamu Sugiura, Masakiyo MatsumuraAbstract:Stoichiometric boron‐nitride films have been successfully deposited at temperatures as low as 400 °C by chemical vapor deposition using diborane (B2H6) and Hydrogen Azide (HN3). The film deposited on the silicon substrate at 475 °C was amorphous and contained Hydrogen atoms with a density of 1.3×1022 cm−3. The breakdown field strength and the low‐field resistivity were 2.8 MV/cm and 1015 Ω cm, respectively. The optical and low‐frequency dielectric constants were 3.6 and 4.0, respectively. Metal‐insulator‐metal device equipped with this film showed steep current‐voltage characteristics.
Osamu Sugiura - One of the best experts on this subject based on the ideXlab platform.
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Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride from Tetra-Silane and Hydrogen Azide
MRS Online Proceedings Library, 1992Co-Authors: Ryoichi Ishihara, Osamu Sugiura, Hiroshi Kanoh, Yasutaka Uchida, Masakiyo MatsumuraAbstract:Silicon nitride films have been successfully deposited at a temperature as low as 300°C by chemical-vapor-deposition using tctra-silane (Si_4H_10) and Hydrogen azidc (HN3). Atomic ratio (N/Si) of the film deposited at 400°C was 1.47, i.e., the film was N-rich. Total Hydrogen content was about 25atomic%. The breakdown-field strength was 6.5MV/cm at leakage-current density of 1μA/cm^2, and the low-field resistivity was more than 10^15Ωcm. Similar electrical characteristics were obtained from films deposited at a temperature range between 300°C and 500°C. Amorphous silicon thin-film transistors equipped with this film as the gate dielectric showed good transfer characteristics.
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Low‐temperature chemical vapor deposition of boron‐nitride films using Hydrogen Azide
Applied Physics Letters, 1992Co-Authors: Ryoichi Ishihara, Osamu Sugiura, Masakiyo MatsumuraAbstract:Stoichiometric boron‐nitride films have been successfully deposited at temperatures as low as 400 °C by chemical vapor deposition using diborane (B2H6) and Hydrogen Azide (HN3). The film deposited on the silicon substrate at 475 °C was amorphous and contained Hydrogen atoms with a density of 1.3×1022 cm−3. The breakdown field strength and the low‐field resistivity were 2.8 MV/cm and 1015 Ω cm, respectively. The optical and low‐frequency dielectric constants were 3.6 and 4.0, respectively. Metal‐insulator‐metal device equipped with this film showed steep current‐voltage characteristics.
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low temperature chemical vapor deposition of boron nitride films using Hydrogen Azide
Applied Physics Letters, 1992Co-Authors: Ryoichi Ishihara, Osamu Sugiura, Masakiyo MatsumuraAbstract:Stoichiometric boron‐nitride films have been successfully deposited at temperatures as low as 400 °C by chemical vapor deposition using diborane (B2H6) and Hydrogen Azide (HN3). The film deposited on the silicon substrate at 475 °C was amorphous and contained Hydrogen atoms with a density of 1.3×1022 cm−3. The breakdown field strength and the low‐field resistivity were 2.8 MV/cm and 1015 Ω cm, respectively. The optical and low‐frequency dielectric constants were 3.6 and 4.0, respectively. Metal‐insulator‐metal device equipped with this film showed steep current‐voltage characteristics.
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Low-Temperature Chemical Vapor Deposition of Silicon Nitride Using A New Source Gas : Hydrogen Azide
Japanese Journal of Applied Physics, 1992Co-Authors: Ryouichi Ishihara, Osamu Sugiura, Hiroshi Kanoh, Masakiyo MatsumuraAbstract:Silicon nitride films were deposited at temperatures as low as 350°C by chemical vapor deposition using a new source gas, Hydrogen Azide (HN3). Silicon nitride film deposited at 425°C was nitrogen-rich and showed Hydrogen content of about 28 atomic%. The breakdown field strength was as high as 8.7 MV/cm and the resistivity was as high as 1015 Ωcm. Amorphous silicon thin-film transistors equipped with this film as the gate dielectric showed good transistor characteristics.
Luigi Costa - One of the best experts on this subject based on the ideXlab platform.
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Thermal decomposition of tetrazole-containing polymers. V. Poly-1-vinyl-5-aminotetrazole
Polymer Degradation and Stability, 1995Co-Authors: S.v. Levchik, Oleg A. Ivashkevich, Pavel N. Gaponik, A.i. Balabanovich, Luigi CostaAbstract:Abstract The thermal decomposition behaviour of poly-1-vinyl-5-aminotetrazole (P-1VAT) was studied by high-resolution thermogravimetry, differential scanning calorimetry and thermal volatilisation analysis. P-1VAT decomposes in two steps. Two parallel processes of the tetrazole ring splitting in the amino-tetrazole pendant group, which evolve either nitrogen or Hydrogen Azide, are considered to be the first step. The partial volatilisation of the melamine, formed in the first step, and polymer chain fragments are observed in the second step. On thermal decomposition under nitrogen, P-1VAT produces a 28% residue which is thermostable at 600°C and which consists of a cross-linked polymer network, melem and melon.
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The thermal decomposition of aminotetrazoles. Part 2. 1-methyl-5-aminotetrazole and 1,5-diaminotetrazole
Thermochimica Acta, 1993Co-Authors: S.v. Levchik, Anatoly I. Lesnikovich, Oleg A. Ivashkevich, Pavel N. Gaponik, A.i. Balabanovich, Luigi CostaAbstract:Abstract The thermal decompositions of 1-methyl-5-aminotetrazole and of 1,5-diaminotetrazole have been studied using thermogravimetry, differential scanning calorimetry and thermal volumetric analysis. The solid residues, and the high boiling point and gaseous products of the decompositions have been collected and identified using IR spectroscopy and mass spectrometry. Both aminotetrazoles start to decompose just after melting: 1-methyl-5-aminotetrazole at 495 K and 1,5-diaminotetrazole at 460 K. The decomposition is accompanied by elimination of gaseous and high boiling point products, partial evaporation of the original substances and formation of thermally stable residues. Both 1-methyl-5-aminotetrazole and 1,5-diaminotetrazole, in the solid state and probably in the melt, coexist in amino and imino tautomeric forms. Therefore, two competing mechanisms of tetrazole ring-breaking, with elimination of respectively nitrogen or Hydrogen Azide molecule, are proposed.
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Thermal decomposition of aminotetrazoles: Part 1. 5-Aminotetrazole
Thermochimica Acta, 1992Co-Authors: S.v. Levchik, Anatoly I. Lesnikovich, Oleg A. Ivashkevich, Pavel N. Gaponik, A.i. Balabanovich, Luigi CostaAbstract:The thermal decomposition of 5-aminotetrazole (5-AT) has been studied by thermogravimetry, thermal volumometry, DSC, DTA and EGA. Solid products of thermal decomposition have been identified by IR spectroscopy and gaseous products by IR and mass spectrometry. Theoretical considerations of thermodynamic characteristics and energies of atomic bonding in the 5-AT tautomeric forms and intermediates have been carried out by the MO SCF method in the MNDO approximation. On the basis of IR and available literature data it is shown that dehydrated 5-AT exists mainly in the imino form in the solid state. Thermal treatment leads to increasing content of the amino form. The thermal decomposition of the imino form of 5-AT starts just after melting and results in Hydrogen Azide and carbodiimide. The linear polymer of carbodiimide and melamine derivatives have been identified in the solid residue. Further increase of temperature in the course of linear heating leads to another route of thermal decomposition involving the amino form of 5-AT accompanied by the evolution of nitrogen. Apparent activation energies of these routes determined from non-isothermal thermogravimetric data amount to 165 and 135 kJ mol−1, respectively.
S.v. Levchik - One of the best experts on this subject based on the ideXlab platform.
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Thermal decomposition of tetrazole-containing polymers. V. Poly-1-vinyl-5-aminotetrazole
Polymer Degradation and Stability, 1995Co-Authors: S.v. Levchik, Oleg A. Ivashkevich, Pavel N. Gaponik, A.i. Balabanovich, Luigi CostaAbstract:Abstract The thermal decomposition behaviour of poly-1-vinyl-5-aminotetrazole (P-1VAT) was studied by high-resolution thermogravimetry, differential scanning calorimetry and thermal volatilisation analysis. P-1VAT decomposes in two steps. Two parallel processes of the tetrazole ring splitting in the amino-tetrazole pendant group, which evolve either nitrogen or Hydrogen Azide, are considered to be the first step. The partial volatilisation of the melamine, formed in the first step, and polymer chain fragments are observed in the second step. On thermal decomposition under nitrogen, P-1VAT produces a 28% residue which is thermostable at 600°C and which consists of a cross-linked polymer network, melem and melon.
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The thermal decomposition of aminotetrazoles. Part 2. 1-methyl-5-aminotetrazole and 1,5-diaminotetrazole
Thermochimica Acta, 1993Co-Authors: S.v. Levchik, Anatoly I. Lesnikovich, Oleg A. Ivashkevich, Pavel N. Gaponik, A.i. Balabanovich, Luigi CostaAbstract:Abstract The thermal decompositions of 1-methyl-5-aminotetrazole and of 1,5-diaminotetrazole have been studied using thermogravimetry, differential scanning calorimetry and thermal volumetric analysis. The solid residues, and the high boiling point and gaseous products of the decompositions have been collected and identified using IR spectroscopy and mass spectrometry. Both aminotetrazoles start to decompose just after melting: 1-methyl-5-aminotetrazole at 495 K and 1,5-diaminotetrazole at 460 K. The decomposition is accompanied by elimination of gaseous and high boiling point products, partial evaporation of the original substances and formation of thermally stable residues. Both 1-methyl-5-aminotetrazole and 1,5-diaminotetrazole, in the solid state and probably in the melt, coexist in amino and imino tautomeric forms. Therefore, two competing mechanisms of tetrazole ring-breaking, with elimination of respectively nitrogen or Hydrogen Azide molecule, are proposed.
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Thermal decomposition of aminotetrazoles
Thermochimica Acta, 1992Co-Authors: Anatoly I. Lesnikovich, Oleg A. Ivashkevich, Pavel N. Gaponik, S.v. Levchik, A.i. Balabanovich, Alexander A. KulakAbstract:Abstract The thermal decomposition of 5-aminotetrazole (5-AT), 1-methyl-5-aminotetrazole (MAT), 1,5-diaminotetrazole (DAT), poly-1-vinyl-5-aminotetrazole (PVAT) and sodium salt of 5-aminotetrazole (SAT) have been studied by thermogravimetry, thermal volumetric analysis (TVA), DSC, DTA and evolved gas analysis (EGA). The kinetic parameters of the thermal decomposition of aminotetrazoles were calculated either by the Ozawa method or by the method of invariant kinetic parameters (IKP). The gaseous products, volatile condensed products and solid residues were identified by FTIR and gas chromatography–mass-spectrometry (GS/MS). The total energies and the energies of chemical bonds of various isomeric forms of 5-AT and MAT have been calculated ab initio using MP2/6-31G∗∗ theory level and MNDO approximation. Based on the content of products of thermal decomposition and the kinetic consideration, the mechanism of thermal decomposition of aminotetrazoles has been derived. Two routes of the splitting of tetrazole ring leading either to elimination nitrogen or Hydrogen Azide are suggested. The contribution of each route is changing upon the advancement of the process. It was assumed, that Hydrogen Azide splits out from the prothotropic forms of the tetrazole ring, which have Hydrogen atoms by nitrogens in the ring. Experimental study as well as literature data on the amino-imino tautomerism are in agreement with the suggested mechanism of the decomposition of the tetrazole ring. It is shown that secondary reactions significantly extend variety of the products of thermal decomposition of aminotetrazoles.
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Thermal decomposition of aminotetrazoles: Part 1. 5-Aminotetrazole
Thermochimica Acta, 1992Co-Authors: S.v. Levchik, Anatoly I. Lesnikovich, Oleg A. Ivashkevich, Pavel N. Gaponik, A.i. Balabanovich, Luigi CostaAbstract:The thermal decomposition of 5-aminotetrazole (5-AT) has been studied by thermogravimetry, thermal volumometry, DSC, DTA and EGA. Solid products of thermal decomposition have been identified by IR spectroscopy and gaseous products by IR and mass spectrometry. Theoretical considerations of thermodynamic characteristics and energies of atomic bonding in the 5-AT tautomeric forms and intermediates have been carried out by the MO SCF method in the MNDO approximation. On the basis of IR and available literature data it is shown that dehydrated 5-AT exists mainly in the imino form in the solid state. Thermal treatment leads to increasing content of the amino form. The thermal decomposition of the imino form of 5-AT starts just after melting and results in Hydrogen Azide and carbodiimide. The linear polymer of carbodiimide and melamine derivatives have been identified in the solid residue. Further increase of temperature in the course of linear heating leads to another route of thermal decomposition involving the amino form of 5-AT accompanied by the evolution of nitrogen. Apparent activation energies of these routes determined from non-isothermal thermogravimetric data amount to 165 and 135 kJ mol−1, respectively.
