The Experts below are selected from a list of 24813 Experts worldwide ranked by ideXlab platform
Martin Moehrle - One of the best experts on this subject based on the ideXlab platform.
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40 gbit s Identical Layer ingaalas mqw electroabsorption modulated dfb lasers operating between 1298 nm and 1311 nm
International Conference on Indium Phosphide and Related Materials, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We present electroabsorption modulated DFB Lasers using an Identical InGaAlAs MQW core for the DFB and the EAM. Excellent 40 Gb/s modulation performance at semi-cooled operation with dynamic extinction ratios exceeding 8.3 dB are demonstrated.
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High performance Identical Layer InGaAlAs-MQW 1300nm electroabsorption-modulated DFB-lasers for 4x25Gbit/s
Semiconductor Lasers and Laser Dynamics V, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We have developed electroabsorption modulated ridge waveguide-based DFB Lasers for 4x25Gbit/s that comply with the IEEE 100GBASE-ER4 Standard for 100Gbit-Ethernet. An Identical InGaAlAs MQW Layer stack is used in the DFB and the EAM section. Devices from a single wafer show excellent 25Gbit/s modulation performance at all four wavelengths with dynamic extinction ratios exceeding 9dB. All devices have facet output powers over +2.5dBm and are operated semi-cooled at 45°C.
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high performance Identical Layer ingaalas mqw 1300nm electroabsorption modulated dfb lasers for 4x25gbit s
Proceedings of SPIE, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We have developed electroabsorption modulated ridge waveguide-based DFB Lasers for 4x25Gbit/s that comply with the IEEE 100GBASE-ER4 Standard for 100Gbit-Ethernet. An Identical InGaAlAs MQW Layer stack is used in the DFB and the EAM section. Devices from a single wafer show excellent 25Gbit/s modulation performance at all four wavelengths with dynamic extinction ratios exceeding 9dB. All devices have facet output powers over +2.5dBm and are operated semi-cooled at 45°C.
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40 Gbit/s Identical Layer InGaAlAs-MQW electroabsorption-modulated DFB-lasers operating between 1298 nm and 1311 nm
2012 International Conference on Indium Phosphide and Related Materials, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We present electroabsorption modulated DFB Lasers using an Identical InGaAlAs MQW core for the DFB and the EAM. Excellent 40 Gb/s modulation performance at semi-cooled operation with dynamic extinction ratios exceeding 8.3 dB are demonstrated.
A. Sigmund - One of the best experts on this subject based on the ideXlab platform.
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Integrated transmitter devices on InP exploiting electro-absorption modulation
PhotoniX, 2020Co-Authors: M. Baier, A. Sigmund, N. Grote, M. Moehrle, F. M. Soares, M. Theurer, U. TroppenzAbstract:InP technology is the principal enabler for implementing fully monolithic photonic integrated circuits (PIC), uniquely including transmitter elements. In this article we present an overview of recent achievements on ultra-high speed electro-absorption modulated lasers (EML) which represent a simple transmitter PIC comprising a single-mode laser diode and an electro-absorption modulator. Using a so-called Identical-Layer approach single-wavelength modulation rates up to 100 Gb/s have been accomplished. By additionally integrating an optical amplifier section modulated optical output power of > 10 dBm has been achieved. Multi-level amplitude modulation was successfully demonstrated. Extended EML chips designed for wavelength-division and space-division multiplexing, respectively, will be presented. For dual-polarization transmission a novel EML related transmitter as well as a corresponding receiver PIC have been introduced. The latter devices were made on a generic PIC platform that is available for open-access foundry service.
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40 gbit s Identical Layer ingaalas mqw electroabsorption modulated dfb lasers operating between 1298 nm and 1311 nm
International Conference on Indium Phosphide and Related Materials, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We present electroabsorption modulated DFB Lasers using an Identical InGaAlAs MQW core for the DFB and the EAM. Excellent 40 Gb/s modulation performance at semi-cooled operation with dynamic extinction ratios exceeding 8.3 dB are demonstrated.
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High performance Identical Layer InGaAlAs-MQW 1300nm electroabsorption-modulated DFB-lasers for 4x25Gbit/s
Semiconductor Lasers and Laser Dynamics V, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We have developed electroabsorption modulated ridge waveguide-based DFB Lasers for 4x25Gbit/s that comply with the IEEE 100GBASE-ER4 Standard for 100Gbit-Ethernet. An Identical InGaAlAs MQW Layer stack is used in the DFB and the EAM section. Devices from a single wafer show excellent 25Gbit/s modulation performance at all four wavelengths with dynamic extinction ratios exceeding 9dB. All devices have facet output powers over +2.5dBm and are operated semi-cooled at 45°C.
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high performance Identical Layer ingaalas mqw 1300nm electroabsorption modulated dfb lasers for 4x25gbit s
Proceedings of SPIE, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We have developed electroabsorption modulated ridge waveguide-based DFB Lasers for 4x25Gbit/s that comply with the IEEE 100GBASE-ER4 Standard for 100Gbit-Ethernet. An Identical InGaAlAs MQW Layer stack is used in the DFB and the EAM section. Devices from a single wafer show excellent 25Gbit/s modulation performance at all four wavelengths with dynamic extinction ratios exceeding 9dB. All devices have facet output powers over +2.5dBm and are operated semi-cooled at 45°C.
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40 Gbit/s Identical Layer InGaAlAs-MQW electroabsorption-modulated DFB-lasers operating between 1298 nm and 1311 nm
2012 International Conference on Indium Phosphide and Related Materials, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We present electroabsorption modulated DFB Lasers using an Identical InGaAlAs MQW core for the DFB and the EAM. Excellent 40 Gb/s modulation performance at semi-cooled operation with dynamic extinction ratios exceeding 8.3 dB are demonstrated.
Holger Klein - One of the best experts on this subject based on the ideXlab platform.
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40 gbit s Identical Layer ingaalas mqw electroabsorption modulated dfb lasers operating between 1298 nm and 1311 nm
International Conference on Indium Phosphide and Related Materials, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We present electroabsorption modulated DFB Lasers using an Identical InGaAlAs MQW core for the DFB and the EAM. Excellent 40 Gb/s modulation performance at semi-cooled operation with dynamic extinction ratios exceeding 8.3 dB are demonstrated.
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High performance Identical Layer InGaAlAs-MQW 1300nm electroabsorption-modulated DFB-lasers for 4x25Gbit/s
Semiconductor Lasers and Laser Dynamics V, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We have developed electroabsorption modulated ridge waveguide-based DFB Lasers for 4x25Gbit/s that comply with the IEEE 100GBASE-ER4 Standard for 100Gbit-Ethernet. An Identical InGaAlAs MQW Layer stack is used in the DFB and the EAM section. Devices from a single wafer show excellent 25Gbit/s modulation performance at all four wavelengths with dynamic extinction ratios exceeding 9dB. All devices have facet output powers over +2.5dBm and are operated semi-cooled at 45°C.
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high performance Identical Layer ingaalas mqw 1300nm electroabsorption modulated dfb lasers for 4x25gbit s
Proceedings of SPIE, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We have developed electroabsorption modulated ridge waveguide-based DFB Lasers for 4x25Gbit/s that comply with the IEEE 100GBASE-ER4 Standard for 100Gbit-Ethernet. An Identical InGaAlAs MQW Layer stack is used in the DFB and the EAM section. Devices from a single wafer show excellent 25Gbit/s modulation performance at all four wavelengths with dynamic extinction ratios exceeding 9dB. All devices have facet output powers over +2.5dBm and are operated semi-cooled at 45°C.
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40 Gbit/s Identical Layer InGaAlAs-MQW electroabsorption-modulated DFB-lasers operating between 1298 nm and 1311 nm
2012 International Conference on Indium Phosphide and Related Materials, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We present electroabsorption modulated DFB Lasers using an Identical InGaAlAs MQW core for the DFB and the EAM. Excellent 40 Gb/s modulation performance at semi-cooled operation with dynamic extinction ratios exceeding 8.3 dB are demonstrated.
Carsten Bornholdt - One of the best experts on this subject based on the ideXlab platform.
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40 gbit s Identical Layer ingaalas mqw electroabsorption modulated dfb lasers operating between 1298 nm and 1311 nm
International Conference on Indium Phosphide and Related Materials, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We present electroabsorption modulated DFB Lasers using an Identical InGaAlAs MQW core for the DFB and the EAM. Excellent 40 Gb/s modulation performance at semi-cooled operation with dynamic extinction ratios exceeding 8.3 dB are demonstrated.
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High performance Identical Layer InGaAlAs-MQW 1300nm electroabsorption-modulated DFB-lasers for 4x25Gbit/s
Semiconductor Lasers and Laser Dynamics V, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We have developed electroabsorption modulated ridge waveguide-based DFB Lasers for 4x25Gbit/s that comply with the IEEE 100GBASE-ER4 Standard for 100Gbit-Ethernet. An Identical InGaAlAs MQW Layer stack is used in the DFB and the EAM section. Devices from a single wafer show excellent 25Gbit/s modulation performance at all four wavelengths with dynamic extinction ratios exceeding 9dB. All devices have facet output powers over +2.5dBm and are operated semi-cooled at 45°C.
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high performance Identical Layer ingaalas mqw 1300nm electroabsorption modulated dfb lasers for 4x25gbit s
Proceedings of SPIE, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We have developed electroabsorption modulated ridge waveguide-based DFB Lasers for 4x25Gbit/s that comply with the IEEE 100GBASE-ER4 Standard for 100Gbit-Ethernet. An Identical InGaAlAs MQW Layer stack is used in the DFB and the EAM section. Devices from a single wafer show excellent 25Gbit/s modulation performance at all four wavelengths with dynamic extinction ratios exceeding 9dB. All devices have facet output powers over +2.5dBm and are operated semi-cooled at 45°C.
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40 Gbit/s Identical Layer InGaAlAs-MQW electroabsorption-modulated DFB-lasers operating between 1298 nm and 1311 nm
2012 International Conference on Indium Phosphide and Related Materials, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We present electroabsorption modulated DFB Lasers using an Identical InGaAlAs MQW core for the DFB and the EAM. Excellent 40 Gb/s modulation performance at semi-cooled operation with dynamic extinction ratios exceeding 8.3 dB are demonstrated.
G. Przyrembel - One of the best experts on this subject based on the ideXlab platform.
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40 gbit s Identical Layer ingaalas mqw electroabsorption modulated dfb lasers operating between 1298 nm and 1311 nm
International Conference on Indium Phosphide and Related Materials, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We present electroabsorption modulated DFB Lasers using an Identical InGaAlAs MQW core for the DFB and the EAM. Excellent 40 Gb/s modulation performance at semi-cooled operation with dynamic extinction ratios exceeding 8.3 dB are demonstrated.
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High performance Identical Layer InGaAlAs-MQW 1300nm electroabsorption-modulated DFB-lasers for 4x25Gbit/s
Semiconductor Lasers and Laser Dynamics V, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We have developed electroabsorption modulated ridge waveguide-based DFB Lasers for 4x25Gbit/s that comply with the IEEE 100GBASE-ER4 Standard for 100Gbit-Ethernet. An Identical InGaAlAs MQW Layer stack is used in the DFB and the EAM section. Devices from a single wafer show excellent 25Gbit/s modulation performance at all four wavelengths with dynamic extinction ratios exceeding 9dB. All devices have facet output powers over +2.5dBm and are operated semi-cooled at 45°C.
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high performance Identical Layer ingaalas mqw 1300nm electroabsorption modulated dfb lasers for 4x25gbit s
Proceedings of SPIE, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We have developed electroabsorption modulated ridge waveguide-based DFB Lasers for 4x25Gbit/s that comply with the IEEE 100GBASE-ER4 Standard for 100Gbit-Ethernet. An Identical InGaAlAs MQW Layer stack is used in the DFB and the EAM section. Devices from a single wafer show excellent 25Gbit/s modulation performance at all four wavelengths with dynamic extinction ratios exceeding 9dB. All devices have facet output powers over +2.5dBm and are operated semi-cooled at 45°C.
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40 Gbit/s Identical Layer InGaAlAs-MQW electroabsorption-modulated DFB-lasers operating between 1298 nm and 1311 nm
2012 International Conference on Indium Phosphide and Related Materials, 2012Co-Authors: Holger Klein, Carsten Bornholdt, G. Przyrembel, A. Sigmund, Wolf-dietrich Molzow, Martin MoehrleAbstract:We present electroabsorption modulated DFB Lasers using an Identical InGaAlAs MQW core for the DFB and the EAM. Excellent 40 Gb/s modulation performance at semi-cooled operation with dynamic extinction ratios exceeding 8.3 dB are demonstrated.
