The Experts below are selected from a list of 318 Experts worldwide ranked by ideXlab platform
Kwang Joo Kim - One of the best experts on this subject based on the ideXlab platform.
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spectroscopic ellipsometry study of zn1 xmgxo thin films deposited on al2o3 0001
Solid State Communications, 2000Co-Authors: Jeong-woo Kang, Young Ran Park, Kwang Joo KimAbstract:Abstract Zn 1− x Mg x O ( x ≤0.21) thin films were prepared on (0001)-oriented sapphire (Al 2 O 3 ) Substrates by rf magnetron sputtering. The obtained films are well oriented to (0001) with their crystalline quality improving with Increasing Substrate Temperature in the 200–500°C range. The Mg composition of the films increases with Increasing Substrate Temperature. The pseudodielectric functions of the films measured at room Temperature by spectroscopic ellipsometry show that the fundamental absorption edge of Zn 1− x Mg x O shifts to higher energies with Increasing Mg composition. Despite the alloying disorder, the optical spectra of the alloys exhibit strong excitonic contribution to the fundamental band-gap transition as in pure ZnO. The blue-shift of the fundamental band gap of the x =0.21 alloy from that of ZnO is estimated to be 400 meV.
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Spectroscopic ellipsometry study of Zn1−xMgxO thin films deposited on Al2O3(0001)
Solid State Communications, 2000Co-Authors: Jeong-woo Kang, Young Ran Park, Kwang Joo KimAbstract:Abstract Zn 1− x Mg x O ( x ≤0.21) thin films were prepared on (0001)-oriented sapphire (Al 2 O 3 ) Substrates by rf magnetron sputtering. The obtained films are well oriented to (0001) with their crystalline quality improving with Increasing Substrate Temperature in the 200–500°C range. The Mg composition of the films increases with Increasing Substrate Temperature. The pseudodielectric functions of the films measured at room Temperature by spectroscopic ellipsometry show that the fundamental absorption edge of Zn 1− x Mg x O shifts to higher energies with Increasing Mg composition. Despite the alloying disorder, the optical spectra of the alloys exhibit strong excitonic contribution to the fundamental band-gap transition as in pure ZnO. The blue-shift of the fundamental band gap of the x =0.21 alloy from that of ZnO is estimated to be 400 meV.
Jeong-woo Kang - One of the best experts on this subject based on the ideXlab platform.
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spectroscopic ellipsometry study of zn1 xmgxo thin films deposited on al2o3 0001
Solid State Communications, 2000Co-Authors: Jeong-woo Kang, Young Ran Park, Kwang Joo KimAbstract:Abstract Zn 1− x Mg x O ( x ≤0.21) thin films were prepared on (0001)-oriented sapphire (Al 2 O 3 ) Substrates by rf magnetron sputtering. The obtained films are well oriented to (0001) with their crystalline quality improving with Increasing Substrate Temperature in the 200–500°C range. The Mg composition of the films increases with Increasing Substrate Temperature. The pseudodielectric functions of the films measured at room Temperature by spectroscopic ellipsometry show that the fundamental absorption edge of Zn 1− x Mg x O shifts to higher energies with Increasing Mg composition. Despite the alloying disorder, the optical spectra of the alloys exhibit strong excitonic contribution to the fundamental band-gap transition as in pure ZnO. The blue-shift of the fundamental band gap of the x =0.21 alloy from that of ZnO is estimated to be 400 meV.
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Spectroscopic ellipsometry study of Zn1−xMgxO thin films deposited on Al2O3(0001)
Solid State Communications, 2000Co-Authors: Jeong-woo Kang, Young Ran Park, Kwang Joo KimAbstract:Abstract Zn 1− x Mg x O ( x ≤0.21) thin films were prepared on (0001)-oriented sapphire (Al 2 O 3 ) Substrates by rf magnetron sputtering. The obtained films are well oriented to (0001) with their crystalline quality improving with Increasing Substrate Temperature in the 200–500°C range. The Mg composition of the films increases with Increasing Substrate Temperature. The pseudodielectric functions of the films measured at room Temperature by spectroscopic ellipsometry show that the fundamental absorption edge of Zn 1− x Mg x O shifts to higher energies with Increasing Mg composition. Despite the alloying disorder, the optical spectra of the alloys exhibit strong excitonic contribution to the fundamental band-gap transition as in pure ZnO. The blue-shift of the fundamental band gap of the x =0.21 alloy from that of ZnO is estimated to be 400 meV.
Young Ran Park - One of the best experts on this subject based on the ideXlab platform.
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spectroscopic ellipsometry study of zn1 xmgxo thin films deposited on al2o3 0001
Solid State Communications, 2000Co-Authors: Jeong-woo Kang, Young Ran Park, Kwang Joo KimAbstract:Abstract Zn 1− x Mg x O ( x ≤0.21) thin films were prepared on (0001)-oriented sapphire (Al 2 O 3 ) Substrates by rf magnetron sputtering. The obtained films are well oriented to (0001) with their crystalline quality improving with Increasing Substrate Temperature in the 200–500°C range. The Mg composition of the films increases with Increasing Substrate Temperature. The pseudodielectric functions of the films measured at room Temperature by spectroscopic ellipsometry show that the fundamental absorption edge of Zn 1− x Mg x O shifts to higher energies with Increasing Mg composition. Despite the alloying disorder, the optical spectra of the alloys exhibit strong excitonic contribution to the fundamental band-gap transition as in pure ZnO. The blue-shift of the fundamental band gap of the x =0.21 alloy from that of ZnO is estimated to be 400 meV.
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Spectroscopic ellipsometry study of Zn1−xMgxO thin films deposited on Al2O3(0001)
Solid State Communications, 2000Co-Authors: Jeong-woo Kang, Young Ran Park, Kwang Joo KimAbstract:Abstract Zn 1− x Mg x O ( x ≤0.21) thin films were prepared on (0001)-oriented sapphire (Al 2 O 3 ) Substrates by rf magnetron sputtering. The obtained films are well oriented to (0001) with their crystalline quality improving with Increasing Substrate Temperature in the 200–500°C range. The Mg composition of the films increases with Increasing Substrate Temperature. The pseudodielectric functions of the films measured at room Temperature by spectroscopic ellipsometry show that the fundamental absorption edge of Zn 1− x Mg x O shifts to higher energies with Increasing Mg composition. Despite the alloying disorder, the optical spectra of the alloys exhibit strong excitonic contribution to the fundamental band-gap transition as in pure ZnO. The blue-shift of the fundamental band gap of the x =0.21 alloy from that of ZnO is estimated to be 400 meV.
R. Jayaganthan - One of the best experts on this subject based on the ideXlab platform.
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Nanomechanical and microstructural characterization of sputter deposited ZnO thin films
Applied Surface Science, 2016Co-Authors: Vipul Bhardwaj, Rajib Chowdhury, R. JayaganthanAbstract:Abstract The nano-mechanical properties of ZnO thin films deposited at different Substrate Temperature such as (RT) 25 °C, 100 °C, 200 °C, and 300 °C using DC-sputtering on Corning glass Substrate were investigated. The ZnO thin films are found to be predominately c-axis (002) oriented. The crystal structure is sensitive to Increasing Substrate Temperature and new set of crystal planes become visible at 300 °C as thin films become highly polycrystalline. The presence of (103) crystal plane is more pronounced with the Increasing Substrate Temperature. However, high crystallinity and peak intensity ratio I(002)/I(103) (counts) is highest for thin films deposited at 100 °C, which is attributed for high hardness and better adhesive properties observed for ZnO thin films. Concomitantly, no major sudden burst of displacement ‘pop-in’ event in load-displacement curve of thin films observed during indentation, indicating the films are dense with low defects and adhered strongly to the Substrate.
M Jayachandran - One of the best experts on this subject based on the ideXlab platform.
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effect of Substrate Temperature on indium tin oxide ito thin films deposited by jet nebulizer spray pyrolysis and solar cell application
Materials Science in Semiconductor Processing, 2014Co-Authors: S Marikkannu, M Kashif, N Sethupathy, V S Vidhya, Shakkthivel Piraman, A Ayeshamariam, M Bououdina, Naser M Ahmed, M JayachandranAbstract:Abstract This study focused on the effect of Substrate Temperature (350 °C, 400 °C, and 450 °C) on morphological, optical, and electrical properties of indium tin oxide (ITO) films deposited onto porous silicon/sodalime glass Substrates through jet nebulizer spray pyrolysis for use in heterojunction solar cells. X-ray diffraction analysis confirmed the formation of pure and single-phase In 2 O 3 for all the deposited films whose crystallinity was enhanced with Increasing Substrate Temperature, as shown by the Increasing (222) peak intensity. Morphological observations were conducted using scanning electron microscopy to reveal the formation of continuous dense films composed of nanograins. The UV–vis spectra revealed that the transmittance increased with Increasing Substrate Temperature, reaching a value of over 80% at 450 °C. The photoelectric performance of the solar cell was studied using the I – V curve by illuminating the cell at 100 mW/cm 2 . A high efficiency ( η ) of 3.325% with I sc and V oc values of 14.8 mA/cm 2 and 0.60 V, respectively, was attained by the ITO solar cell annealed at 450 °C.
