The Experts below are selected from a list of 48 Experts worldwide ranked by ideXlab platform

Aurelian Crunteanu - One of the best experts on this subject based on the ideXlab platform.

  • Arrays of GeTe electrically activated RF switches
    2017 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2017
    Co-Authors: A. Ghalem, Cyril Guines, Pierre Blondy, A. Hariri, Damien Passerieux, Laure Huitema, Aurelian Crunteanu
    Abstract:

    We report the fabrication and the high-frequency characterization of four-terminals GeTe-phase change material RF switches. The device integrates an Indirect Heating System for reversible changing the GeTe material's state from crystalline to amorphous. We show that the dimensions of the GeTe patterns have to be optimized for obtaining high on-state resistances of a single device and proper RF performances. For an electrical activation of an initially crystalline GeTe pattern to its amorphous state we used an electrical pulse with a 500 ns duration and 60 mA intensity resulting in switches having 7fF off-state capacitance. The reverse process (switch turned to the ON state) requires an electrical pulse of 3 ps and 40 mA intensity, resulting in an on-state resistance of 36Ω. We demonstrate that arrays of similar 8-switches present very good performances, with 0.8 dB of insertion loss and 25 dB of isolation at 5 GHz.

  • Bistable RF switches using Ge2Sb2Te5 phase change material
    2015 European Microwave Conference (EuMC), 2015
    Co-Authors: Amine Mennai, Cyril Guines, Pierre Blondy, Annie Bessaudou, Françoise Cosset, Aurelian Crunteanu
    Abstract:

    This paper presents the design, fabrication and characterization of Ge2Te2Sb5-based phase change material RF switches. The material exhibits non-volatile reversible amorphous to crystalline phase change with resistivity changes up to 105 orders of magnitude. Being non-volatile, these RF switches do not require permanent bias to be maintained in a given state. We present the design of a 4-terminal RF switch integrating an Indirect Heating System to induce amorphous to crystalline phase change of the material. The measured figure of merit FOM (Ron × Coff) is about 450 fs, which is comparable to FOM obtained for SOI and SOS technologies, without permanent bias.

Pierre Blondy - One of the best experts on this subject based on the ideXlab platform.

  • Arrays of GeTe electrically activated RF switches
    2017 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2017
    Co-Authors: A. Ghalem, Cyril Guines, Pierre Blondy, A. Hariri, Damien Passerieux, Laure Huitema, Aurelian Crunteanu
    Abstract:

    We report the fabrication and the high-frequency characterization of four-terminals GeTe-phase change material RF switches. The device integrates an Indirect Heating System for reversible changing the GeTe material's state from crystalline to amorphous. We show that the dimensions of the GeTe patterns have to be optimized for obtaining high on-state resistances of a single device and proper RF performances. For an electrical activation of an initially crystalline GeTe pattern to its amorphous state we used an electrical pulse with a 500 ns duration and 60 mA intensity resulting in switches having 7fF off-state capacitance. The reverse process (switch turned to the ON state) requires an electrical pulse of 3 ps and 40 mA intensity, resulting in an on-state resistance of 36Ω. We demonstrate that arrays of similar 8-switches present very good performances, with 0.8 dB of insertion loss and 25 dB of isolation at 5 GHz.

  • Bistable RF switches using Ge2Sb2Te5 phase change material
    2015 European Microwave Conference (EuMC), 2015
    Co-Authors: Amine Mennai, Cyril Guines, Pierre Blondy, Annie Bessaudou, Françoise Cosset, Aurelian Crunteanu
    Abstract:

    This paper presents the design, fabrication and characterization of Ge2Te2Sb5-based phase change material RF switches. The material exhibits non-volatile reversible amorphous to crystalline phase change with resistivity changes up to 105 orders of magnitude. Being non-volatile, these RF switches do not require permanent bias to be maintained in a given state. We present the design of a 4-terminal RF switch integrating an Indirect Heating System to induce amorphous to crystalline phase change of the material. The measured figure of merit FOM (Ron × Coff) is about 450 fs, which is comparable to FOM obtained for SOI and SOS technologies, without permanent bias.

Cyril Guines - One of the best experts on this subject based on the ideXlab platform.

  • Arrays of GeTe electrically activated RF switches
    2017 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2017
    Co-Authors: A. Ghalem, Cyril Guines, Pierre Blondy, A. Hariri, Damien Passerieux, Laure Huitema, Aurelian Crunteanu
    Abstract:

    We report the fabrication and the high-frequency characterization of four-terminals GeTe-phase change material RF switches. The device integrates an Indirect Heating System for reversible changing the GeTe material's state from crystalline to amorphous. We show that the dimensions of the GeTe patterns have to be optimized for obtaining high on-state resistances of a single device and proper RF performances. For an electrical activation of an initially crystalline GeTe pattern to its amorphous state we used an electrical pulse with a 500 ns duration and 60 mA intensity resulting in switches having 7fF off-state capacitance. The reverse process (switch turned to the ON state) requires an electrical pulse of 3 ps and 40 mA intensity, resulting in an on-state resistance of 36Ω. We demonstrate that arrays of similar 8-switches present very good performances, with 0.8 dB of insertion loss and 25 dB of isolation at 5 GHz.

  • Bistable RF switches using Ge2Sb2Te5 phase change material
    2015 European Microwave Conference (EuMC), 2015
    Co-Authors: Amine Mennai, Cyril Guines, Pierre Blondy, Annie Bessaudou, Françoise Cosset, Aurelian Crunteanu
    Abstract:

    This paper presents the design, fabrication and characterization of Ge2Te2Sb5-based phase change material RF switches. The material exhibits non-volatile reversible amorphous to crystalline phase change with resistivity changes up to 105 orders of magnitude. Being non-volatile, these RF switches do not require permanent bias to be maintained in a given state. We present the design of a 4-terminal RF switch integrating an Indirect Heating System to induce amorphous to crystalline phase change of the material. The measured figure of merit FOM (Ron × Coff) is about 450 fs, which is comparable to FOM obtained for SOI and SOS technologies, without permanent bias.

Dedy Kristanto - One of the best experts on this subject based on the ideXlab platform.

  • Preliminary study on the utilization of geothermal energy for drying of agricultural product
    2003
    Co-Authors: Andri Cahyo Kumoro, Dedy Kristanto
    Abstract:

    Indonesia is highly rich in natural resources. Volcanoes are spread over the Sumatra, Java, Bali and Nusa Tenggara islands in connection with a Mediterranean circumferential. The rest are volcanoes in Sulawesi, the Maluku archipelago and Northern Papua in connection with a Pacific circumferential. Volcanic activities create a potential source of geothermal energy. One of the famous geothermal energy centres in Indonesia is the Dieng plateau. It is also well known for tobacco and mushroom plantations. However, due to the heavy rainfall and drying problems the quality of the tobacco produced here is somehow still below the international standard. Therefore, a research into the utilization of geothermal energy for tobacco drying becomes very important. The research into the drying of tobacco leaves was conducted using an Indirect Heating System. The heat source for the dryer was geothermal steam. A certain amount of sliced tobacco leaves was placed into a tray dryer. Then the steam was kept flowing at a selected velocity. The moisture loss of the tobacco leaves was indicated by direct balancing of the sample and was then recorded at five-minute intervals. The experiment was stopped after one hour since the steam started to leak into the System. Using the moisture loss and time data, a drying rate curve was obtained. The effects of the steam flow rates and the sliced tobacco leaves layer thickness on the drying performance were investigated in this research. Experimental works showed that the increase of steam flow rate can enhance the drying performance, while increasing the layer thickness reduced the drying performance. However the high sulphur content in the steam caused rusting of the tray material and an unpleasant odour was produced.

Amine Mennai - One of the best experts on this subject based on the ideXlab platform.

  • Bistable RF switches using Ge2Sb2Te5 phase change material
    2015 European Microwave Conference (EuMC), 2015
    Co-Authors: Amine Mennai, Cyril Guines, Pierre Blondy, Annie Bessaudou, Françoise Cosset, Aurelian Crunteanu
    Abstract:

    This paper presents the design, fabrication and characterization of Ge2Te2Sb5-based phase change material RF switches. The material exhibits non-volatile reversible amorphous to crystalline phase change with resistivity changes up to 105 orders of magnitude. Being non-volatile, these RF switches do not require permanent bias to be maintained in a given state. We present the design of a 4-terminal RF switch integrating an Indirect Heating System to induce amorphous to crystalline phase change of the material. The measured figure of merit FOM (Ron × Coff) is about 450 fs, which is comparable to FOM obtained for SOI and SOS technologies, without permanent bias.