The Experts below are selected from a list of 11850 Experts worldwide ranked by ideXlab platform

Kaustav Banerjee - One of the best experts on this subject based on the ideXlab platform.

  • high frequency behavior of graphene based interconnects part ii impedance analysis and implications for Inductor Design
    IEEE Transactions on Electron Devices, 2011
    Co-Authors: Deblina Sarkar, Kaustav Banerjee
    Abstract:

    This paper provides the first detailed insights into the ultrahigh-frequency behavior of graphene ribbons (GRs) and analyzes their consequences in Designing interconnects and low-loss on-chip Inductors. In the companion paper (part I), an accurate impedance modeling methodology has been developed based on the Boltzmann equation with the magnetic vector potential Green's function approach incorporating the dependency of current on the nonlocal electric field. Based on the developed methodology, this paper for the first time embarks on the rigorous investigation of the intricate processes occurring at high frequencies in GRs, such as anomalous skin effect (ASE), high-frequency resistance and inductance saturation, intercoupled relation between edge specularity and ASE, and the influence of the linear dimensions on impedance. A comparative study of the high-frequency response of GRs with that of carbon nanotubes (CNTs) and Cu is made to highlight the potential of GR interconnects for high-frequency applications. Subsequently, the high-frequency performance of GR Inductors is analyzed, and it is shown that they can achieve 32% and 50% improvements in maximum Q-factor compared to Cu and single-walled CNT Inductors with 1/3 metallic fraction, respectively.

  • High-frequency analysis of Carbon Nanotube interconnects and implications for on-chip Inductor Design
    IEEE Transactions on Electron Devices, 2009
    Co-Authors: Hong Li, Kaustav Banerjee
    Abstract:

    This paper presents a rigorous investigation of high-frequency effects in carbon nanotube (CNT) interconnects and their implications for the Design and performance analysis of high-quality on-chip Inductors. A frequency-dependent impedance extraction method is developed for both single-walled CNT (SWCNT) and multiwalled CNT (MWCNT) bundle interconnects. The method is subsequently verified by comparing the results with those derived directly from the Maxwell's equations. Our analysis reveals for the first time that skin effect in CNT (particularly MWCNT) bundles is significantly reduced compared to that in conventional metal conductors, which makes them very attractive and promising material for high-frequency applications, including high-quality (Q) factor on-chip Inductor Design in high-performance RF/mixed-signal circuits. It is shown that such unique high-frequency properties of CNTs essentially arise due to their large momentum relaxation time (leading to their large kinetic inductance), which causes the skin depths to saturate with frequency and thereby limits resistance increase at high frequencies in a bundle structure. It is subsequently shown that CNT-based planar spiral Inductors can achieve more than three times higher Q factor than their Cu-based counterparts without using any magnetic materials or Q factor enhancement techniques.

  • high frequency effects in carbon nanotube interconnects and implications for on chip Inductor Design
    International Electron Devices Meeting, 2008
    Co-Authors: Kaustav Banerjee
    Abstract:

    This paper presents a rigorous investigation of high-frequency effects in carbon nanotube interconnects and their implications for the Design and performance analysis of high-quality on-chip Inductors. An accurate method is developed to calculate the frequency-dependent resistance and inductance of both single-walled (SWCNT) and multi-walled carbon nanotube (MWCNT) bundle interconnects. Our analysis reveals for the first time that skin effect (current redistribution) in CNT bundles is negligible compared to that in conventional metal conductors, which make them a very attractive and promising material for high-frequency applications, including on-chip Inductor Design in high-performance RF/mixed-signal circuits. It is subsequently shown that CNT based Inductors can achieve nearly 4times higher Q factor than Cu based Inductors.

David J Perreault - One of the best experts on this subject based on the ideXlab platform.

  • a low loss Inductor structure and Design guidelines for high frequency applications
    IEEE Transactions on Power Electronics, 2019
    Co-Authors: Rachel S Yang, Charles R Sullivan, Alex J Hanson, Bradley A Reese, David J Perreault
    Abstract:

    Operation in the high-frequency (HF) regime (3–30 MHz) has potential for miniaturizing power electronics, but Designing small efficient Inductors at HF can be challenging. At these frequencies, losses due to skin and proximity effects are difficult to reduce, and gaps needed to keep $\boldsymbol {B}$ fields low in the core add fringing field loss. We propose a low-loss Inductor structure with step-by-step Design guidelines for HF applications. The structure achieves low loss through double-sided conduction in its single-layer winding and through quasi-distributed gaps. An example ∼15 μH Inductor Designed using the proposed Design guidelines achieved an experimental quality factor of 720 at 3 MHz and 2A (peak) of ac current. The Inductor also improved a high-current-swing power converter operated at 1–3 MHz; at 250 W, the Inductor reduced converter losses by 19%, compared to a conventional Inductor Design. In some cases, litz wire may further improve the performance of the proposed structure. With litz wire, the example Inductor had an improved quality factor of 980. Thus, the proposed Inductor geometry and Design guidelines are suitable for small highly efficient Inductors at HF and can thereby help realize high-frequency miniaturization of power electronics. (This paper is accompanied by an example Python script for generating preliminary Designs, available in the online supplementary material.)

  • Inductor Design methods with low permeability rf core materials
    Vabulas, 2012
    Co-Authors: Yehui Han, David J Perreault
    Abstract:

    This paper presents a Design procedure for Inductors based on low-permeability magnetic materials, for use in very high frequency power conversion. The proposed procedure offers an easy and fast way to compare different magnetic materials based on Steinmetz parameters and quickly select the best among them, to estimate the achievable Inductor quality factor and size, and to Design the Inductor. Approximations used in the proposed methods are discussed. Geometry optimization of magnetic-core Inductors is also investigated. The proposed Design procedure and methods are verified by experiments.

  • Inductor Design methods with low permeability rf core materials
    Energy Conversion Congress and Exposition, 2010
    Co-Authors: Yehui Han, David J Perreault
    Abstract:

    This paper presents a Design procedure for Inductors based on low-permeability magnetic materials for use in very high frequency (VHF) power conversion. The proposed procedure offers an easy and fast way to compare different magnetic materials based on Steinmetz parameters and quickly select the best among them, estimate the achievable Inductor quality factor and size, and finally Design the Inductor. Geometry optimization of magnetic-core Inductors is also investigated. The proposed Design procedure and methods are verified by experiments.

Qiang Li - One of the best experts on this subject based on the ideXlab platform.

  • high density low profile coupled Inductor Design for integrated point of load converters
    IEEE Transactions on Power Electronics, 2013
    Co-Authors: Qiang Li, Yan Dong, David Gilham
    Abstract:

    Low-profile integrated point-of-load (POL) converter is today's industry trend for portable electronic applications. Magnetics is the major challenge and bottleneck for achieving a low-profile high-power-density integrated POL. So, how to Design a low-profile magnetic becomes one of the key technologies for integrated POL. Inverse coupling is one of the possible methods used to reduce Inductor size due to the dc flux cancelling effect. Several integrated low-profile coupled Inductor structures with different flux patterns (vertical flux and lateral flux) are proposed and studied in this paper based on low-temperature co-fired ceramics (LTCC) technology. Two LTCC coupled Inductor prototypes are Designed and fabricated to verify the theoretical analysis. A 1.5-MHz, 5-1.2 V, 40-A 3-D integrated buck converter with LTCC coupled Inductor substrate is also fabricated. The peak efficiency of this integrated converter is as high as 89%. The power density of this integrated converter is as high as 680 W/in3, which is almost six times higher than today's industry products with the same current level.

  • high density low profile coupled Inductor Design for integrated point of load converter
    Applied Power Electronics Conference, 2010
    Co-Authors: Qiang Li, Yan Dong
    Abstract:

    Low profile integrated Point-of-Load (POL) converter is today's industry trend for portable electronic applications. Magnetics is the major challenge and bottleneck for achieving low profile high power density integrated POL. So, how to Design a low profile magnetic becomes one of the key technologies for integrated POL. Inverse coupling is one of the possible methods to reduce Inductor size due to the dc flux cancelling effect. Several integrated low profile coupled Inductor structures with different flux patterns (vertical flux and lateral flux) are proposed in this paper based on low temperature co-fired ceramics (LTCC) technology. This paper also reveals that the lateral flux coupled Inductor structure can have higher inductance density than vertical flux structure. Two LTCC coupled Inductor prototypes are Designed and fabricated to verify the theoretical analysis. A 1.5MHz, 5V to 1.2V, 3D integrated buck converter with LTCC coupled Inductor substrate is also fabricated. The power density of this integrated converter is as high as 700W/in3.

  • high inductance density low profile Inductor structure for integrated point of load converter
    Applied Power Electronics Conference, 2009
    Co-Authors: Qiang Li
    Abstract:

    This paper presents a 3D integrated solution that uses a low-profile planar Inductor as the substrate as one of the possible methods to integrate the magnetic component with the active component. In order to reduce the Inductor size to achieve a more compact integrated converter, several low-profile Inductor structures with different flux path patterns (vertical or lateral) based on low temperature co-fired ceramics (LTCC) technology are studied and compared. Some lateral flux structures are proposed to increase the inductance density for a low-profile Inductor Design. A 1.5MHz, 5V to 1.2V, 3D integrated buck converter with LTCC Inductor substrate is Designed and fabricated and Compared with a vertical flux structure, the proposed lateral flux structure can help to save around 30% of the footprint. The full load (Io= 15A) efficiency of this 3D integrated buck converter is around 87%. The power density of this integrated converter is as high as 300W/in3.

David Gilham - One of the best experts on this subject based on the ideXlab platform.

  • high density low profile coupled Inductor Design for integrated point of load converters
    IEEE Transactions on Power Electronics, 2013
    Co-Authors: Qiang Li, Yan Dong, David Gilham
    Abstract:

    Low-profile integrated point-of-load (POL) converter is today's industry trend for portable electronic applications. Magnetics is the major challenge and bottleneck for achieving a low-profile high-power-density integrated POL. So, how to Design a low-profile magnetic becomes one of the key technologies for integrated POL. Inverse coupling is one of the possible methods used to reduce Inductor size due to the dc flux cancelling effect. Several integrated low-profile coupled Inductor structures with different flux patterns (vertical flux and lateral flux) are proposed and studied in this paper based on low-temperature co-fired ceramics (LTCC) technology. Two LTCC coupled Inductor prototypes are Designed and fabricated to verify the theoretical analysis. A 1.5-MHz, 5-1.2 V, 40-A 3-D integrated buck converter with LTCC coupled Inductor substrate is also fabricated. The peak efficiency of this integrated converter is as high as 89%. The power density of this integrated converter is as high as 680 W/in3, which is almost six times higher than today's industry products with the same current level.

Yan Dong - One of the best experts on this subject based on the ideXlab platform.

  • high density low profile coupled Inductor Design for integrated point of load converters
    IEEE Transactions on Power Electronics, 2013
    Co-Authors: Qiang Li, Yan Dong, David Gilham
    Abstract:

    Low-profile integrated point-of-load (POL) converter is today's industry trend for portable electronic applications. Magnetics is the major challenge and bottleneck for achieving a low-profile high-power-density integrated POL. So, how to Design a low-profile magnetic becomes one of the key technologies for integrated POL. Inverse coupling is one of the possible methods used to reduce Inductor size due to the dc flux cancelling effect. Several integrated low-profile coupled Inductor structures with different flux patterns (vertical flux and lateral flux) are proposed and studied in this paper based on low-temperature co-fired ceramics (LTCC) technology. Two LTCC coupled Inductor prototypes are Designed and fabricated to verify the theoretical analysis. A 1.5-MHz, 5-1.2 V, 40-A 3-D integrated buck converter with LTCC coupled Inductor substrate is also fabricated. The peak efficiency of this integrated converter is as high as 89%. The power density of this integrated converter is as high as 680 W/in3, which is almost six times higher than today's industry products with the same current level.

  • high density low profile coupled Inductor Design for integrated point of load converter
    Applied Power Electronics Conference, 2010
    Co-Authors: Qiang Li, Yan Dong
    Abstract:

    Low profile integrated Point-of-Load (POL) converter is today's industry trend for portable electronic applications. Magnetics is the major challenge and bottleneck for achieving low profile high power density integrated POL. So, how to Design a low profile magnetic becomes one of the key technologies for integrated POL. Inverse coupling is one of the possible methods to reduce Inductor size due to the dc flux cancelling effect. Several integrated low profile coupled Inductor structures with different flux patterns (vertical flux and lateral flux) are proposed in this paper based on low temperature co-fired ceramics (LTCC) technology. This paper also reveals that the lateral flux coupled Inductor structure can have higher inductance density than vertical flux structure. Two LTCC coupled Inductor prototypes are Designed and fabricated to verify the theoretical analysis. A 1.5MHz, 5V to 1.2V, 3D integrated buck converter with LTCC coupled Inductor substrate is also fabricated. The power density of this integrated converter is as high as 700W/in3.