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S Mirov - One of the best experts on this subject based on the ideXlab platform.
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frontiers of mid Infrared Lasers based on transition metal doped ii vi semiconductors
Journal of Luminescence, 2013Co-Authors: V V Fedorov, S Mirov, Igor Moskalev, M Mirov, D V MartyshkinAbstract:Abstract Recent progress in chromium and iron doped II–VI semiconductor materials makes them the laser sources of choice when one needs a compact system with broad mid-IR tunability over 1.9–6 μm. Output powers exceeding 10 W, output energies 20 mJ, pulse durations 80 fs, peak powers in excess of 1 GW, and efficiency up to 70% were demonstrated in several Cr doped semiconductors. The unique combination of technological and spectroscopic characteristics makes these materials ideal candidates for mid-IR tunable and ultrafast laser systems. This article reviews transition metal doped II–VI materials and recent progress in Cr- and Fe- doped solid-state mid-IR Lasers.
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en route to electrically pumped broadly tunable middle Infrared Lasers based on transition metal doped ii vi semiconductors
Journal of Luminescence, 2007Co-Authors: V V Fedorov, Andrew Gallia, Igo Moskalev, S MirovAbstract:Abstract In this work we report the study of Cr 2+ :ZnSe photo-luminescence under UV and visible excitation as well as middle-Infrared electroluminescence of n-type, Cr doped bulk ZnSe crystals. Photo-conductance studies were performed to verify (2+)→(1+)→(2+)* ionization transitions responsible for Cr 2+ excitation. We report the first to our knowledge, Cr 2+ :ZnSe lasing using 532 nm excitation. The first ever room temperature electroluminescence was also achieved in bulk n-type Cr:Al:ZnSe. This electroluminescence over 1800–2800 nm spectral range is in a good agreement with the mid-IR Cr 2+ fluorescence under intra-shell optical excitation. Other spectral bands of electroluminescence were also observed at 600 nm and 8 μm. The visible electroluminescence observed is attributed to V zn –Al complexes in conductive crystals. The nature of the 8 μm electroluminescence requires additional studies. Photo-ionization results are essential for optical pumping of Cr:ZnSe by easily available visible Lasers, and, most importantly, both these and the electroluminescence results open a pathway for Cr:ZnSe broadband mid-IR lasing under direct injection of free carriers. Future directions for electrical excitation of low dimensional II–VI structures, where quantum confinement of the atomic impurity is used, could result in a much more efficient transfer of energy from the host to the localized impurity, are discussed.
D V Martyshkin - One of the best experts on this subject based on the ideXlab platform.
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frontiers of mid Infrared Lasers based on transition metal doped ii vi semiconductors
Journal of Luminescence, 2013Co-Authors: V V Fedorov, S Mirov, Igor Moskalev, M Mirov, D V MartyshkinAbstract:Abstract Recent progress in chromium and iron doped II–VI semiconductor materials makes them the laser sources of choice when one needs a compact system with broad mid-IR tunability over 1.9–6 μm. Output powers exceeding 10 W, output energies 20 mJ, pulse durations 80 fs, peak powers in excess of 1 GW, and efficiency up to 70% were demonstrated in several Cr doped semiconductors. The unique combination of technological and spectroscopic characteristics makes these materials ideal candidates for mid-IR tunable and ultrafast laser systems. This article reviews transition metal doped II–VI materials and recent progress in Cr- and Fe- doped solid-state mid-IR Lasers.
V V Fedorov - One of the best experts on this subject based on the ideXlab platform.
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frontiers of mid Infrared Lasers based on transition metal doped ii vi semiconductors
Journal of Luminescence, 2013Co-Authors: V V Fedorov, S Mirov, Igor Moskalev, M Mirov, D V MartyshkinAbstract:Abstract Recent progress in chromium and iron doped II–VI semiconductor materials makes them the laser sources of choice when one needs a compact system with broad mid-IR tunability over 1.9–6 μm. Output powers exceeding 10 W, output energies 20 mJ, pulse durations 80 fs, peak powers in excess of 1 GW, and efficiency up to 70% were demonstrated in several Cr doped semiconductors. The unique combination of technological and spectroscopic characteristics makes these materials ideal candidates for mid-IR tunable and ultrafast laser systems. This article reviews transition metal doped II–VI materials and recent progress in Cr- and Fe- doped solid-state mid-IR Lasers.
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en route to electrically pumped broadly tunable middle Infrared Lasers based on transition metal doped ii vi semiconductors
Journal of Luminescence, 2007Co-Authors: V V Fedorov, Andrew Gallia, Igo Moskalev, S MirovAbstract:Abstract In this work we report the study of Cr 2+ :ZnSe photo-luminescence under UV and visible excitation as well as middle-Infrared electroluminescence of n-type, Cr doped bulk ZnSe crystals. Photo-conductance studies were performed to verify (2+)→(1+)→(2+)* ionization transitions responsible for Cr 2+ excitation. We report the first to our knowledge, Cr 2+ :ZnSe lasing using 532 nm excitation. The first ever room temperature electroluminescence was also achieved in bulk n-type Cr:Al:ZnSe. This electroluminescence over 1800–2800 nm spectral range is in a good agreement with the mid-IR Cr 2+ fluorescence under intra-shell optical excitation. Other spectral bands of electroluminescence were also observed at 600 nm and 8 μm. The visible electroluminescence observed is attributed to V zn –Al complexes in conductive crystals. The nature of the 8 μm electroluminescence requires additional studies. Photo-ionization results are essential for optical pumping of Cr:ZnSe by easily available visible Lasers, and, most importantly, both these and the electroluminescence results open a pathway for Cr:ZnSe broadband mid-IR lasing under direct injection of free carriers. Future directions for electrical excitation of low dimensional II–VI structures, where quantum confinement of the atomic impurity is used, could result in a much more efficient transfer of energy from the host to the localized impurity, are discussed.
Igor Moskalev - One of the best experts on this subject based on the ideXlab platform.
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frontiers of mid Infrared Lasers based on transition metal doped ii vi semiconductors
Journal of Luminescence, 2013Co-Authors: V V Fedorov, S Mirov, Igor Moskalev, M Mirov, D V MartyshkinAbstract:Abstract Recent progress in chromium and iron doped II–VI semiconductor materials makes them the laser sources of choice when one needs a compact system with broad mid-IR tunability over 1.9–6 μm. Output powers exceeding 10 W, output energies 20 mJ, pulse durations 80 fs, peak powers in excess of 1 GW, and efficiency up to 70% were demonstrated in several Cr doped semiconductors. The unique combination of technological and spectroscopic characteristics makes these materials ideal candidates for mid-IR tunable and ultrafast laser systems. This article reviews transition metal doped II–VI materials and recent progress in Cr- and Fe- doped solid-state mid-IR Lasers.
M Mirov - One of the best experts on this subject based on the ideXlab platform.
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frontiers of mid Infrared Lasers based on transition metal doped ii vi semiconductors
Journal of Luminescence, 2013Co-Authors: V V Fedorov, S Mirov, Igor Moskalev, M Mirov, D V MartyshkinAbstract:Abstract Recent progress in chromium and iron doped II–VI semiconductor materials makes them the laser sources of choice when one needs a compact system with broad mid-IR tunability over 1.9–6 μm. Output powers exceeding 10 W, output energies 20 mJ, pulse durations 80 fs, peak powers in excess of 1 GW, and efficiency up to 70% were demonstrated in several Cr doped semiconductors. The unique combination of technological and spectroscopic characteristics makes these materials ideal candidates for mid-IR tunable and ultrafast laser systems. This article reviews transition metal doped II–VI materials and recent progress in Cr- and Fe- doped solid-state mid-IR Lasers.