The Experts below are selected from a list of 78 Experts worldwide ranked by ideXlab platform

Paul F Sciortino - One of the best experts on this subject based on the ideXlab platform.

  • Very low threshold single quantum well graded‐index separate confinement heterostructure InGaAs/InGaAsP Lasers grown by chemical beam epitaxy
    Applied Physics Letters, 1991
    Co-Authors: Won-tien Tsang, Fow-sen Choa, Young-kai Chen, Arthur Mike Sergent, Paul F Sciortino
    Abstract:

    We have succeeded in preparing 1.5 μm wavelength strained‐layer graded‐index separate confinement heterostructure (GRINSCH) InGaAs/InGaAsP single quantum well (SQW) Injection Lasers by chemical beam epitaxy (CBE). These Lasers have extremely low threshold current density Jth of 170 A/cm2, internal quantum efficiency of 83%, and internal waveguide loss of 3.8 cm−1. To the best of our knowledge, these results represent the best values obtained thus far from long‐wavelength InGaAs/InGaAsP quantum well Injection Lasers grown by any techniques. However, despite the recent rapid reduction in Jth, the threshold‐temperature dependence remains poor (T0=45 K) even in these very low Jth GRINSCH SQW Lasers.

  • very low threshold single quantum well graded index separate confinement heterostructure ingaas ingaasp Lasers grown by chemical beam epitaxy
    Applied Physics Letters, 1991
    Co-Authors: Won-tien Tsang, Fow-sen Choa, Young-kai Chen, Arthur Mike Sergent, Paul F Sciortino
    Abstract:

    We have succeeded in preparing 1.5 μm wavelength strained‐layer graded‐index separate confinement heterostructure (GRINSCH) InGaAs/InGaAsP single quantum well (SQW) Injection Lasers by chemical beam epitaxy (CBE). These Lasers have extremely low threshold current density Jth of 170 A/cm2, internal quantum efficiency of 83%, and internal waveguide loss of 3.8 cm−1. To the best of our knowledge, these results represent the best values obtained thus far from long‐wavelength InGaAs/InGaAsP quantum well Injection Lasers grown by any techniques. However, despite the recent rapid reduction in Jth, the threshold‐temperature dependence remains poor (T0=45 K) even in these very low Jth GRINSCH SQW Lasers.

Won-tien Tsang - One of the best experts on this subject based on the ideXlab platform.

  • Very low threshold single quantum well graded‐index separate confinement heterostructure InGaAs/InGaAsP Lasers grown by chemical beam epitaxy
    Applied Physics Letters, 1991
    Co-Authors: Won-tien Tsang, Fow-sen Choa, Young-kai Chen, Arthur Mike Sergent, Paul F Sciortino
    Abstract:

    We have succeeded in preparing 1.5 μm wavelength strained‐layer graded‐index separate confinement heterostructure (GRINSCH) InGaAs/InGaAsP single quantum well (SQW) Injection Lasers by chemical beam epitaxy (CBE). These Lasers have extremely low threshold current density Jth of 170 A/cm2, internal quantum efficiency of 83%, and internal waveguide loss of 3.8 cm−1. To the best of our knowledge, these results represent the best values obtained thus far from long‐wavelength InGaAs/InGaAsP quantum well Injection Lasers grown by any techniques. However, despite the recent rapid reduction in Jth, the threshold‐temperature dependence remains poor (T0=45 K) even in these very low Jth GRINSCH SQW Lasers.

  • very low threshold single quantum well graded index separate confinement heterostructure ingaas ingaasp Lasers grown by chemical beam epitaxy
    Applied Physics Letters, 1991
    Co-Authors: Won-tien Tsang, Fow-sen Choa, Young-kai Chen, Arthur Mike Sergent, Paul F Sciortino
    Abstract:

    We have succeeded in preparing 1.5 μm wavelength strained‐layer graded‐index separate confinement heterostructure (GRINSCH) InGaAs/InGaAsP single quantum well (SQW) Injection Lasers by chemical beam epitaxy (CBE). These Lasers have extremely low threshold current density Jth of 170 A/cm2, internal quantum efficiency of 83%, and internal waveguide loss of 3.8 cm−1. To the best of our knowledge, these results represent the best values obtained thus far from long‐wavelength InGaAs/InGaAsP quantum well Injection Lasers grown by any techniques. However, despite the recent rapid reduction in Jth, the threshold‐temperature dependence remains poor (T0=45 K) even in these very low Jth GRINSCH SQW Lasers.

R Watanabe - One of the best experts on this subject based on the ideXlab platform.

  • lasing characteristics of gainasp inp strained quantum well microdisk Injection Lasers with diameter of 2 10 spl mu m
    IEEE Photonics Technology Letters, 1997
    Co-Authors: Toshihiko Baba, P Fujita, A Sakai, M Kihara, R Watanabe
    Abstract:

    We have obtained pulsed lasing operation in 2-5-/spl mu/m diameter microdisk Injection Lasers using GaInAsP-InP compressively-strained multiple-quantum-well (MQW) wafers around room temperature. The effective cavity volume of the 2-/spl mu/m-diameter device is the smallest among those for any type of electrically-pumped Lasers. The threshold current of this device was as low as 0.2 mA. Cavity modes in emission spectra observed under CW conditions coincide well with theoretically predicted whispering gallery modes. Further reduction of diameter to less than 1.5 /spl mu/m will realize the condition for spontaneous emission almost coupling into a single mode, which results in thresholdless lasing operation.

Arthur Mike Sergent - One of the best experts on this subject based on the ideXlab platform.

  • Very low threshold single quantum well graded‐index separate confinement heterostructure InGaAs/InGaAsP Lasers grown by chemical beam epitaxy
    Applied Physics Letters, 1991
    Co-Authors: Won-tien Tsang, Fow-sen Choa, Young-kai Chen, Arthur Mike Sergent, Paul F Sciortino
    Abstract:

    We have succeeded in preparing 1.5 μm wavelength strained‐layer graded‐index separate confinement heterostructure (GRINSCH) InGaAs/InGaAsP single quantum well (SQW) Injection Lasers by chemical beam epitaxy (CBE). These Lasers have extremely low threshold current density Jth of 170 A/cm2, internal quantum efficiency of 83%, and internal waveguide loss of 3.8 cm−1. To the best of our knowledge, these results represent the best values obtained thus far from long‐wavelength InGaAs/InGaAsP quantum well Injection Lasers grown by any techniques. However, despite the recent rapid reduction in Jth, the threshold‐temperature dependence remains poor (T0=45 K) even in these very low Jth GRINSCH SQW Lasers.

  • very low threshold single quantum well graded index separate confinement heterostructure ingaas ingaasp Lasers grown by chemical beam epitaxy
    Applied Physics Letters, 1991
    Co-Authors: Won-tien Tsang, Fow-sen Choa, Young-kai Chen, Arthur Mike Sergent, Paul F Sciortino
    Abstract:

    We have succeeded in preparing 1.5 μm wavelength strained‐layer graded‐index separate confinement heterostructure (GRINSCH) InGaAs/InGaAsP single quantum well (SQW) Injection Lasers by chemical beam epitaxy (CBE). These Lasers have extremely low threshold current density Jth of 170 A/cm2, internal quantum efficiency of 83%, and internal waveguide loss of 3.8 cm−1. To the best of our knowledge, these results represent the best values obtained thus far from long‐wavelength InGaAs/InGaAsP quantum well Injection Lasers grown by any techniques. However, despite the recent rapid reduction in Jth, the threshold‐temperature dependence remains poor (T0=45 K) even in these very low Jth GRINSCH SQW Lasers.

Fow-sen Choa - One of the best experts on this subject based on the ideXlab platform.

  • Very low threshold single quantum well graded‐index separate confinement heterostructure InGaAs/InGaAsP Lasers grown by chemical beam epitaxy
    Applied Physics Letters, 1991
    Co-Authors: Won-tien Tsang, Fow-sen Choa, Young-kai Chen, Arthur Mike Sergent, Paul F Sciortino
    Abstract:

    We have succeeded in preparing 1.5 μm wavelength strained‐layer graded‐index separate confinement heterostructure (GRINSCH) InGaAs/InGaAsP single quantum well (SQW) Injection Lasers by chemical beam epitaxy (CBE). These Lasers have extremely low threshold current density Jth of 170 A/cm2, internal quantum efficiency of 83%, and internal waveguide loss of 3.8 cm−1. To the best of our knowledge, these results represent the best values obtained thus far from long‐wavelength InGaAs/InGaAsP quantum well Injection Lasers grown by any techniques. However, despite the recent rapid reduction in Jth, the threshold‐temperature dependence remains poor (T0=45 K) even in these very low Jth GRINSCH SQW Lasers.

  • very low threshold single quantum well graded index separate confinement heterostructure ingaas ingaasp Lasers grown by chemical beam epitaxy
    Applied Physics Letters, 1991
    Co-Authors: Won-tien Tsang, Fow-sen Choa, Young-kai Chen, Arthur Mike Sergent, Paul F Sciortino
    Abstract:

    We have succeeded in preparing 1.5 μm wavelength strained‐layer graded‐index separate confinement heterostructure (GRINSCH) InGaAs/InGaAsP single quantum well (SQW) Injection Lasers by chemical beam epitaxy (CBE). These Lasers have extremely low threshold current density Jth of 170 A/cm2, internal quantum efficiency of 83%, and internal waveguide loss of 3.8 cm−1. To the best of our knowledge, these results represent the best values obtained thus far from long‐wavelength InGaAs/InGaAsP quantum well Injection Lasers grown by any techniques. However, despite the recent rapid reduction in Jth, the threshold‐temperature dependence remains poor (T0=45 K) even in these very low Jth GRINSCH SQW Lasers.