The Experts below are selected from a list of 315 Experts worldwide ranked by ideXlab platform
Yexin Feng - One of the best experts on this subject based on the ideXlab platform.
-
van der waals epitaxial growth and Optoelectronics of large scale wse2 sns2 vertical bilayer p n junctions
Nature Communications, 2017Co-Authors: Tiefeng Yang, Biyuan Zheng, Zhaoyang Qi, Yexin Feng, Weida Hu, Feng Miao, Xuehong Zhang, Zhen Wang, Tao Xu, Xiangfeng DuanAbstract:High-quality two-dimensional atomic layered p–n heterostructures are essential for high-performance Integrated Optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilayer p–n junctions on SiO2/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been Integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10−14 A and a highest on–off ratio of up to 107. Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance Integrated optoelectronic devices and systems. Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al. prepare millimeter-scaled WSe2/SnS2 vertical heterojunctions by two-step van der Waals epitaxy, which show excellent optoelectronic properties.
-
Van der Waals epitaxial growth and Optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions
Nature Communications, 2017Co-Authors: Tiefeng Yang, Biyuan Zheng, Juan Zou, Zhaoyang Qi, Chen Pan, Hongjun Liu, Xuehong Zhang, Zhen Wang, Tao Xu, Yexin FengAbstract:High-quality two-dimensional atomic layered p–n heterostructures are essential for high-performance Integrated Optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilayer p–n junctions on SiO2/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been Integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10−14 A and a highest on–off ratio of up to 107. Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance Integrated optoelectronic devices and systems.
Tiefeng Yang - One of the best experts on this subject based on the ideXlab platform.
-
van der waals epitaxial growth and Optoelectronics of large scale wse2 sns2 vertical bilayer p n junctions
Nature Communications, 2017Co-Authors: Tiefeng Yang, Biyuan Zheng, Zhaoyang Qi, Yexin Feng, Weida Hu, Feng Miao, Xuehong Zhang, Zhen Wang, Tao Xu, Xiangfeng DuanAbstract:High-quality two-dimensional atomic layered p–n heterostructures are essential for high-performance Integrated Optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilayer p–n junctions on SiO2/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been Integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10−14 A and a highest on–off ratio of up to 107. Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance Integrated optoelectronic devices and systems. Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al. prepare millimeter-scaled WSe2/SnS2 vertical heterojunctions by two-step van der Waals epitaxy, which show excellent optoelectronic properties.
-
Van der Waals epitaxial growth and Optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions
Nature Communications, 2017Co-Authors: Tiefeng Yang, Biyuan Zheng, Juan Zou, Zhaoyang Qi, Chen Pan, Hongjun Liu, Xuehong Zhang, Zhen Wang, Tao Xu, Yexin FengAbstract:High-quality two-dimensional atomic layered p–n heterostructures are essential for high-performance Integrated Optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilayer p–n junctions on SiO2/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been Integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10−14 A and a highest on–off ratio of up to 107. Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance Integrated optoelectronic devices and systems.
Xiangfeng Duan - One of the best experts on this subject based on the ideXlab platform.
-
van der waals epitaxial growth and Optoelectronics of large scale wse2 sns2 vertical bilayer p n junctions
Nature Communications, 2017Co-Authors: Tiefeng Yang, Biyuan Zheng, Zhaoyang Qi, Yexin Feng, Weida Hu, Feng Miao, Xuehong Zhang, Zhen Wang, Tao Xu, Xiangfeng DuanAbstract:High-quality two-dimensional atomic layered p–n heterostructures are essential for high-performance Integrated Optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilayer p–n junctions on SiO2/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been Integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10−14 A and a highest on–off ratio of up to 107. Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance Integrated optoelectronic devices and systems. Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al. prepare millimeter-scaled WSe2/SnS2 vertical heterojunctions by two-step van der Waals epitaxy, which show excellent optoelectronic properties.
Zhaoyang Qi - One of the best experts on this subject based on the ideXlab platform.
-
van der waals epitaxial growth and Optoelectronics of large scale wse2 sns2 vertical bilayer p n junctions
Nature Communications, 2017Co-Authors: Tiefeng Yang, Biyuan Zheng, Zhaoyang Qi, Yexin Feng, Weida Hu, Feng Miao, Xuehong Zhang, Zhen Wang, Tao Xu, Xiangfeng DuanAbstract:High-quality two-dimensional atomic layered p–n heterostructures are essential for high-performance Integrated Optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilayer p–n junctions on SiO2/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been Integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10−14 A and a highest on–off ratio of up to 107. Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance Integrated optoelectronic devices and systems. Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al. prepare millimeter-scaled WSe2/SnS2 vertical heterojunctions by two-step van der Waals epitaxy, which show excellent optoelectronic properties.
-
Van der Waals epitaxial growth and Optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions
Nature Communications, 2017Co-Authors: Tiefeng Yang, Biyuan Zheng, Juan Zou, Zhaoyang Qi, Chen Pan, Hongjun Liu, Xuehong Zhang, Zhen Wang, Tao Xu, Yexin FengAbstract:High-quality two-dimensional atomic layered p–n heterostructures are essential for high-performance Integrated Optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilayer p–n junctions on SiO2/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been Integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10−14 A and a highest on–off ratio of up to 107. Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance Integrated optoelectronic devices and systems.
Biyuan Zheng - One of the best experts on this subject based on the ideXlab platform.
-
van der waals epitaxial growth and Optoelectronics of large scale wse2 sns2 vertical bilayer p n junctions
Nature Communications, 2017Co-Authors: Tiefeng Yang, Biyuan Zheng, Zhaoyang Qi, Yexin Feng, Weida Hu, Feng Miao, Xuehong Zhang, Zhen Wang, Tao Xu, Xiangfeng DuanAbstract:High-quality two-dimensional atomic layered p–n heterostructures are essential for high-performance Integrated Optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilayer p–n junctions on SiO2/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been Integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10−14 A and a highest on–off ratio of up to 107. Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance Integrated optoelectronic devices and systems. Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al. prepare millimeter-scaled WSe2/SnS2 vertical heterojunctions by two-step van der Waals epitaxy, which show excellent optoelectronic properties.
-
Van der Waals epitaxial growth and Optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions
Nature Communications, 2017Co-Authors: Tiefeng Yang, Biyuan Zheng, Juan Zou, Zhaoyang Qi, Chen Pan, Hongjun Liu, Xuehong Zhang, Zhen Wang, Tao Xu, Yexin FengAbstract:High-quality two-dimensional atomic layered p–n heterostructures are essential for high-performance Integrated Optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilayer p–n junctions on SiO2/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been Integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10−14 A and a highest on–off ratio of up to 107. Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance Integrated optoelectronic devices and systems.