The Experts below are selected from a list of 8130 Experts worldwide ranked by ideXlab platform

Fen Xi - One of the best experts on this subject based on the ideXlab platform.

Xiuyan Li - One of the best experts on this subject based on the ideXlab platform.

  • Interface Reaction kinetics in sige oxidation
    Applied Physics Letters, 2019
    Co-Authors: Xiuyan Li, Tomonori Nishimura, Yusuke Noma, Woojin Song, Akira Toriumi
    Abstract:

    The oxidation of SiGe is very different from that of Si or Ge, leading to poor Interface quality in oxidized SiGe gate stacks. In this work, SiGe oxidation kinetics and its effects on the generation of Interface defects are discussed by considering the GeO desorption as well as Ge precipitation. Unlike GeO2/Ge, no GeO desorption associated with the Reaction between GeO2 and Ge is detected in GeO2/SiGe below 700 °C. Instead, GeO desorption related to a Reaction between GeO2 and Si is observed above 800 °C; however, it is suppressed by inserting a thin SiO2 layer on the SiGe surface. Based on experimental results and thermodynamic calculations, the SiGe oxidation kinetics is reconsidered in conjunction with the Interface properties in SiGe gate stacks. The present results provide clear insights into a viable solution for high performance SiGe gate stacks.The oxidation of SiGe is very different from that of Si or Ge, leading to poor Interface quality in oxidized SiGe gate stacks. In this work, SiGe oxidation kinetics and its effects on the generation of Interface defects are discussed by considering the GeO desorption as well as Ge precipitation. Unlike GeO2/Ge, no GeO desorption associated with the Reaction between GeO2 and Ge is detected in GeO2/SiGe below 700 °C. Instead, GeO desorption related to a Reaction between GeO2 and Si is observed above 800 °C; however, it is suppressed by inserting a thin SiO2 layer on the SiGe surface. Based on experimental results and thermodynamic calculations, the SiGe oxidation kinetics is reconsidered in conjunction with the Interface properties in SiGe gate stacks. The present results provide clear insights into a viable solution for high performance SiGe gate stacks.

  • analytical formulation of sio 2 il scavenging in hfo 2 sio 2 si gate stacks a key is the sio 2 si Interface Reaction
    International Electron Devices Meeting, 2014
    Co-Authors: Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi
    Abstract:

    The scavenging kinetics of ultra-thin-SiO 2 Interface layer (IL) in HfO 2 /SiO 2 /Si stacks is investigated by focusing on SiO 2 /Si Interface Reaction in addition to both O and Si atom kinetics. SiO 2 /Si Interface serves as a stage that the oxygen vacancy (VO) is converted to Si release from SiO 2 with the help of Si substrate. Based on both diffusion kinetics and possible Reaction, an analytical model for two-stage SiO 2 -IL scavenging in high-k gate stack is proposed.

Akira Toriumi - One of the best experts on this subject based on the ideXlab platform.

  • Interface Reaction kinetics in sige oxidation
    Applied Physics Letters, 2019
    Co-Authors: Xiuyan Li, Tomonori Nishimura, Yusuke Noma, Woojin Song, Akira Toriumi
    Abstract:

    The oxidation of SiGe is very different from that of Si or Ge, leading to poor Interface quality in oxidized SiGe gate stacks. In this work, SiGe oxidation kinetics and its effects on the generation of Interface defects are discussed by considering the GeO desorption as well as Ge precipitation. Unlike GeO2/Ge, no GeO desorption associated with the Reaction between GeO2 and Ge is detected in GeO2/SiGe below 700 °C. Instead, GeO desorption related to a Reaction between GeO2 and Si is observed above 800 °C; however, it is suppressed by inserting a thin SiO2 layer on the SiGe surface. Based on experimental results and thermodynamic calculations, the SiGe oxidation kinetics is reconsidered in conjunction with the Interface properties in SiGe gate stacks. The present results provide clear insights into a viable solution for high performance SiGe gate stacks.The oxidation of SiGe is very different from that of Si or Ge, leading to poor Interface quality in oxidized SiGe gate stacks. In this work, SiGe oxidation kinetics and its effects on the generation of Interface defects are discussed by considering the GeO desorption as well as Ge precipitation. Unlike GeO2/Ge, no GeO desorption associated with the Reaction between GeO2 and Ge is detected in GeO2/SiGe below 700 °C. Instead, GeO desorption related to a Reaction between GeO2 and Si is observed above 800 °C; however, it is suppressed by inserting a thin SiO2 layer on the SiGe surface. Based on experimental results and thermodynamic calculations, the SiGe oxidation kinetics is reconsidered in conjunction with the Interface properties in SiGe gate stacks. The present results provide clear insights into a viable solution for high performance SiGe gate stacks.

  • analytical formulation of sio 2 il scavenging in hfo 2 sio 2 si gate stacks a key is the sio 2 si Interface Reaction
    International Electron Devices Meeting, 2014
    Co-Authors: Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi
    Abstract:

    The scavenging kinetics of ultra-thin-SiO 2 Interface layer (IL) in HfO 2 /SiO 2 /Si stacks is investigated by focusing on SiO 2 /Si Interface Reaction in addition to both O and Si atom kinetics. SiO 2 /Si Interface serves as a stage that the oxygen vacancy (VO) is converted to Si release from SiO 2 with the help of Si substrate. Based on both diffusion kinetics and possible Reaction, an analytical model for two-stage SiO 2 -IL scavenging in high-k gate stack is proposed.

Gang Bi - One of the best experts on this subject based on the ideXlab platform.

Koji Kita - One of the best experts on this subject based on the ideXlab platform.

  • Interface Reaction limited growth of thermal oxides on 4h sic 0001 in nanometer thick region
    Applied Physics Letters, 2014
    Co-Authors: Richard Heihachiro Kikuchi, Koji Kita
    Abstract:

    Growth kinetics of nanometer-thick thermal oxides on 4H-SiC (0001), Si-face, was investigated. A linear oxide growth was clearly observed in this thickness region, indicating the oxide growth is limited by Interface Reaction. The activation energy of the Interface Reaction was estimated to be 3.8 ± 0.1 eV. The rate-limiting step in this Reaction was discussed from both the value of activation energy and the oxygen partial pressure dependence of the growth rate. The enhanced growth limited only to the initial <2 nm region was also observed, which is suggesting the change of the rate-limiting step for the Interface Reaction in the ultrathin region.

  • Interface-Reaction-limited growth of thermal oxides on 4H-SiC (0001) in nanometer-thick region
    Applied Physics Letters, 2014
    Co-Authors: Richard Heihachiro Kikuchi, Koji Kita
    Abstract:

    Growth kinetics of nanometer-thick thermal oxides on 4H-SiC (0001), Si-face, was investigated. A linear oxide growth was clearly observed in this thickness region, indicating the oxide growth is limited by Interface Reaction. The activation energy of the Interface Reaction was estimated to be 3.8 ± 0.1 eV. The rate-limiting step in this Reaction was discussed from both the value of activation energy and the oxygen partial pressure dependence of the growth rate. The enhanced growth limited only to the initial