The Experts below are selected from a list of 8442 Experts worldwide ranked by ideXlab platform
Youichi Ohno - One of the best experts on this subject based on the ideXlab platform.
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Interlayer Interaction in misfit layer compounds mts3 m sn pb la t ti nb
Solid State Communications, 1991Co-Authors: Youichi OhnoAbstract:Abstract MTS 3 (M = Sn, Pb, La; T = Ti, Nb), rigorously denoted by (MS) 1+ x (TS 2 ), are misfit layer compounds with nonstoichiometric compositions. We may regard them as intercalation derivatives of layered TS 2 compounds, but also as materials having ultimately-thin one-dimensional superlattices with repeated distances of an atomic scale. The detailed investigation of Interlayer Interaction has been made, applying a difference technique to the sulfur K and niobium 2 X-ray absorption spectra. It is found that in all cases charge transfer occurs from MS to TS 2 layers, but Interlayer Interaction depends on the combination of two kinds of alternately-stacked layers. PbNbS 3 and SnNbS 3 have stronger Interlayer Interaction than PbTiS 3 and LaNbS 3 .
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Interlayer Interaction in misfit layer compounds MTS3 (M = Sn, Pb, La; T = Ti, Nb)
Solid State Communications, 1991Co-Authors: Youichi OhnoAbstract:Abstract MTS 3 (M = Sn, Pb, La; T = Ti, Nb), rigorously denoted by (MS) 1+ x (TS 2 ), are misfit layer compounds with nonstoichiometric compositions. We may regard them as intercalation derivatives of layered TS 2 compounds, but also as materials having ultimately-thin one-dimensional superlattices with repeated distances of an atomic scale. The detailed investigation of Interlayer Interaction has been made, applying a difference technique to the sulfur K and niobium 2 X-ray absorption spectra. It is found that in all cases charge transfer occurs from MS to TS 2 layers, but Interlayer Interaction depends on the combination of two kinds of alternately-stacked layers. PbNbS 3 and SnNbS 3 have stronger Interlayer Interaction than PbTiS 3 and LaNbS 3 .
Kenji Watanabe - One of the best experts on this subject based on the ideXlab platform.
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atomic and electronic reconstruction at the van der waals interface in twisted bilayer graphene
Nature Materials, 2019Co-Authors: Rebecca Engelke, Stephen Carr, Shiang Fang, Kuan Zhang, Paul Cazeaux, Suk Hyun Sung, Robert Hovden, Adam W Tsen, Takashi Taniguchi, Kenji WatanabeAbstract:Control of the Interlayer twist angle in two-dimensional van der Waals (vdW) heterostructures enables one to engineer a quasiperiodic moire superlattice of tunable length scale1–8. In twisted bilayer graphene, the simple moire superlattice band description suggests that the electronic bandwidth can be tuned to be comparable to the vdW Interlayer Interaction at a ‘magic angle’9, exhibiting strongly correlated behaviour. However, the vdW Interlayer Interaction can also cause significant structural reconstruction at the interface by favouring Interlayer commensurability, which competes with the intralayer lattice distortion10–16. Here we report atomic-scale reconstruction in twisted bilayer graphene and its effect on the electronic structure. We find a gradual transition from an incommensurate moire structure to an array of commensurate domains with soliton boundaries as we decrease the twist angle across the characteristic crossover angle, θc ≈ 1°. In the solitonic regime (θ < θc) where the atomic and electronic reconstruction become significant, a simple moire band description breaks down and the secondary Dirac bands appear. On applying a transverse electric field, we observe electronic transport along the network of one-dimensional topological channels that surround the alternating triangular gapped domains. Atomic and electronic reconstruction at the vdW interface provide a new pathway to engineer the system with continuous tunability. An investigation of the structural and transport properties of bilayer graphene as a function of the twist angle between the layers reveals atomic-scale reconstruction for twist angles smaller than a critical value.
Vidar Gudmundsson - One of the best experts on this subject based on the ideXlab platform.
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Interlayer Interaction controlling the properties of ab and aa stacked bilayer graphene like bc _ 14 n and si _ 2 c _ 14
arXiv: Mesoscale and Nanoscale Physics, 2020Co-Authors: Nzar Rauf Abdullah, Hunar Omar Rashid, Andrei Manolescu, Vidar GudmundssonAbstract:We model bilayer graphene-like materials with Si$_2$C$_{14}$ and BC$_{14}$N stoichiometry, where the Interlayer Interactions play important roles shaping the physical properties of the systems. We find the Interlayer Interaction in Si$_2$C$_{14}$ to be repulsive due to the Interaction of Si-Si atoms, and in BC$_{14}$N it is attractive due to B and N atoms for both the AA- and the AB-stacking. The repulsive Interlayer Interaction opens up a bandgap in Si$_2$C$_{14}$ while the attractive Interlayer Interaction in BC$_{14}$N induces a small indirect bandgap or overlaping of the valence conduction bands. Furthermore, the repulsive Interaction decreases the Young modulus while the attractive Interaction does not influence the Young modulus much. The stress-strain curves of both the AA- and the AB-stackings are suppressed compared to pure graphine bilayers. The optical response of Si$_2$C$_{14}$ is very sensitive to an applied electric field and an enrichment in the optical spectra is found at low energy. The enrichment is attributed to the bandgap opening and increased energy spacing between the $\pi{\text -}\pi^*$ bands. In BC$_{14}$N, the optical spectra are reduced due to the indirect bandgap or the overlapping of the $\pi{\text -}\pi^* $ bands. Last, a high Seebeck coefficient is observed due to the presence of a direct bandgap in Si$_2$C$_{14}$, while it is not much enhanced in BC$_{14}$N.
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Interlayer Interaction controlling the properties of AB- and AA-stacked bilayer graphene-like BC$_{14}$N and Si$_{2}$C$_{14}$
arXiv: Mesoscale and Nanoscale Physics, 2020Co-Authors: Nzar Rauf Abdullah, Hunar Omar Rashid, Andrei Manolescu, Vidar GudmundssonAbstract:We model bilayer graphene-like materials with Si$_2$C$_{14}$ and BC$_{14}$N stoichiometry, where the Interlayer Interactions play important roles shaping the physical properties of the systems. We find the Interlayer Interaction in Si$_2$C$_{14}$ to be repulsive due to the Interaction of Si-Si atoms, and in BC$_{14}$N it is attractive due to B and N atoms for both the AA- and the AB-stacking. The repulsive Interlayer Interaction opens up a bandgap in Si$_2$C$_{14}$ while the attractive Interlayer Interaction in BC$_{14}$N induces a small indirect bandgap or overlaping of the valence conduction bands. Furthermore, the repulsive Interaction decreases the Young modulus while the attractive Interaction does not influence the Young modulus much. The stress-strain curves of both the AA- and the AB-stackings are suppressed compared to pure graphine bilayers. The optical response of Si$_2$C$_{14}$ is very sensitive to an applied electric field and an enrichment in the optical spectra is found at low energy. The enrichment is attributed to the bandgap opening and increased energy spacing between the $\pi{\text -}\pi^*$ bands. In BC$_{14}$N, the optical spectra are reduced due to the indirect bandgap or the overlapping of the $\pi{\text -}\pi^* $ bands. Last, a high Seebeck coefficient is observed due to the presence of a direct bandgap in Si$_2$C$_{14}$, while it is not much enhanced in BC$_{14}$N.
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Interlayer Interaction controlling the properties of AB- and AA-stacked bilayer graphene-like BC14N and Si2C14
Surfaces and Interfaces, 1Co-Authors: Nzar Rauf Abdullah, Hunar Omar Rashid, Andrei Manolescu, Vidar GudmundssonAbstract:Abstract We model bilayer graphene-like materials with Si2C14 and BC14N stoichiometry, where the Interlayer Interactions play important roles shaping the physical properties of the systems. We find the Interlayer Interaction in Si2C14 to be repulsive due to the Interaction of Si-Si atoms, and in BC14N it is attractive due to B and N atoms. The repulsive Interlayer Interaction opens up a bandgap in Si2C14 while the attractive Interlayer Interaction in BC14N induces a small indirect bandgap. Furthermore, the repulsive Interaction decreases the Young modulus while the attractive Interaction does not influence the Young modulus much. The stress-strain curves of both the AA- and the AB-stackings are suppressed compared to pure graphene bilayers. The optical response of Si2C14 is very sensitive to an applied electric field and an enrichment in the optical spectra is found at low energy. The enrichment is attributed to the bandgap opening and increased energy spacing between the π-π* bands. In BC14N, the optical spectra are reduced due to the indirect bandgap or the overlapping of the π-π* bands. Last, a high Seebeck coefficient is observed due to the presence of a direct bandgap in Si2C14, while it is not much enhanced in BC14N.
Rebecca Engelke - One of the best experts on this subject based on the ideXlab platform.
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atomic and electronic reconstruction at the van der waals interface in twisted bilayer graphene
Nature Materials, 2019Co-Authors: Rebecca Engelke, Stephen Carr, Shiang Fang, Kuan Zhang, Paul Cazeaux, Suk Hyun Sung, Robert Hovden, Adam W Tsen, Takashi Taniguchi, Kenji WatanabeAbstract:Control of the Interlayer twist angle in two-dimensional van der Waals (vdW) heterostructures enables one to engineer a quasiperiodic moire superlattice of tunable length scale1–8. In twisted bilayer graphene, the simple moire superlattice band description suggests that the electronic bandwidth can be tuned to be comparable to the vdW Interlayer Interaction at a ‘magic angle’9, exhibiting strongly correlated behaviour. However, the vdW Interlayer Interaction can also cause significant structural reconstruction at the interface by favouring Interlayer commensurability, which competes with the intralayer lattice distortion10–16. Here we report atomic-scale reconstruction in twisted bilayer graphene and its effect on the electronic structure. We find a gradual transition from an incommensurate moire structure to an array of commensurate domains with soliton boundaries as we decrease the twist angle across the characteristic crossover angle, θc ≈ 1°. In the solitonic regime (θ < θc) where the atomic and electronic reconstruction become significant, a simple moire band description breaks down and the secondary Dirac bands appear. On applying a transverse electric field, we observe electronic transport along the network of one-dimensional topological channels that surround the alternating triangular gapped domains. Atomic and electronic reconstruction at the vdW interface provide a new pathway to engineer the system with continuous tunability. An investigation of the structural and transport properties of bilayer graphene as a function of the twist angle between the layers reveals atomic-scale reconstruction for twist angles smaller than a critical value.
Nzar Rauf Abdullah - One of the best experts on this subject based on the ideXlab platform.
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Interlayer Interaction controlling the properties of ab and aa stacked bilayer graphene like bc _ 14 n and si _ 2 c _ 14
arXiv: Mesoscale and Nanoscale Physics, 2020Co-Authors: Nzar Rauf Abdullah, Hunar Omar Rashid, Andrei Manolescu, Vidar GudmundssonAbstract:We model bilayer graphene-like materials with Si$_2$C$_{14}$ and BC$_{14}$N stoichiometry, where the Interlayer Interactions play important roles shaping the physical properties of the systems. We find the Interlayer Interaction in Si$_2$C$_{14}$ to be repulsive due to the Interaction of Si-Si atoms, and in BC$_{14}$N it is attractive due to B and N atoms for both the AA- and the AB-stacking. The repulsive Interlayer Interaction opens up a bandgap in Si$_2$C$_{14}$ while the attractive Interlayer Interaction in BC$_{14}$N induces a small indirect bandgap or overlaping of the valence conduction bands. Furthermore, the repulsive Interaction decreases the Young modulus while the attractive Interaction does not influence the Young modulus much. The stress-strain curves of both the AA- and the AB-stackings are suppressed compared to pure graphine bilayers. The optical response of Si$_2$C$_{14}$ is very sensitive to an applied electric field and an enrichment in the optical spectra is found at low energy. The enrichment is attributed to the bandgap opening and increased energy spacing between the $\pi{\text -}\pi^*$ bands. In BC$_{14}$N, the optical spectra are reduced due to the indirect bandgap or the overlapping of the $\pi{\text -}\pi^* $ bands. Last, a high Seebeck coefficient is observed due to the presence of a direct bandgap in Si$_2$C$_{14}$, while it is not much enhanced in BC$_{14}$N.
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Interlayer Interaction controlling the properties of AB- and AA-stacked bilayer graphene-like BC$_{14}$N and Si$_{2}$C$_{14}$
arXiv: Mesoscale and Nanoscale Physics, 2020Co-Authors: Nzar Rauf Abdullah, Hunar Omar Rashid, Andrei Manolescu, Vidar GudmundssonAbstract:We model bilayer graphene-like materials with Si$_2$C$_{14}$ and BC$_{14}$N stoichiometry, where the Interlayer Interactions play important roles shaping the physical properties of the systems. We find the Interlayer Interaction in Si$_2$C$_{14}$ to be repulsive due to the Interaction of Si-Si atoms, and in BC$_{14}$N it is attractive due to B and N atoms for both the AA- and the AB-stacking. The repulsive Interlayer Interaction opens up a bandgap in Si$_2$C$_{14}$ while the attractive Interlayer Interaction in BC$_{14}$N induces a small indirect bandgap or overlaping of the valence conduction bands. Furthermore, the repulsive Interaction decreases the Young modulus while the attractive Interaction does not influence the Young modulus much. The stress-strain curves of both the AA- and the AB-stackings are suppressed compared to pure graphine bilayers. The optical response of Si$_2$C$_{14}$ is very sensitive to an applied electric field and an enrichment in the optical spectra is found at low energy. The enrichment is attributed to the bandgap opening and increased energy spacing between the $\pi{\text -}\pi^*$ bands. In BC$_{14}$N, the optical spectra are reduced due to the indirect bandgap or the overlapping of the $\pi{\text -}\pi^* $ bands. Last, a high Seebeck coefficient is observed due to the presence of a direct bandgap in Si$_2$C$_{14}$, while it is not much enhanced in BC$_{14}$N.
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Interlayer Interaction controlling the properties of AB- and AA-stacked bilayer graphene-like BC14N and Si2C14
Surfaces and Interfaces, 1Co-Authors: Nzar Rauf Abdullah, Hunar Omar Rashid, Andrei Manolescu, Vidar GudmundssonAbstract:Abstract We model bilayer graphene-like materials with Si2C14 and BC14N stoichiometry, where the Interlayer Interactions play important roles shaping the physical properties of the systems. We find the Interlayer Interaction in Si2C14 to be repulsive due to the Interaction of Si-Si atoms, and in BC14N it is attractive due to B and N atoms. The repulsive Interlayer Interaction opens up a bandgap in Si2C14 while the attractive Interlayer Interaction in BC14N induces a small indirect bandgap. Furthermore, the repulsive Interaction decreases the Young modulus while the attractive Interaction does not influence the Young modulus much. The stress-strain curves of both the AA- and the AB-stackings are suppressed compared to pure graphene bilayers. The optical response of Si2C14 is very sensitive to an applied electric field and an enrichment in the optical spectra is found at low energy. The enrichment is attributed to the bandgap opening and increased energy spacing between the π-π* bands. In BC14N, the optical spectra are reduced due to the indirect bandgap or the overlapping of the π-π* bands. Last, a high Seebeck coefficient is observed due to the presence of a direct bandgap in Si2C14, while it is not much enhanced in BC14N.