The Experts below are selected from a list of 228 Experts worldwide ranked by ideXlab platform
M S Skolnick - One of the best experts on this subject based on the ideXlab platform.
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High-reflectivity AlxGa1−xN∕AlyGa1−yN distributed Bragg reflectors with peak wavelength around 350nm
Applied Physics Letters, 2004Co-Authors: Tao Wang, R Butte, R J Lynch, P J Parbrook, A Alyamani, D Sanvitto, D M Whittaker, M S SkolnickAbstract:Al0.49Ga0.51N∕Al0.16Ga0.84N distributed Bragg reflectors (DBRs), designed for the ultraviolet spectral region, are reported. The crack-free structures are grown on sapphire substrates by metalorganic chemical vapor deposition. A peak reflectivity of 91% at 353nm with a stop-band width of 17nm was obtained at 300K using a 25pair DBR. Structures at 6nm shorter wavelength show asymmetric spectra, a narrower stop band, and slightly decreased peak reflectivity. By studying the spectra as a function of temperature, the degradation is shown to arise from Internal Absorption at short wavelengths. Simulations based on transfer matrix theory agree well with the experimental data.
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high reflectivity alxga1 xn alyga1 yn distributed bragg reflectors with peak wavelength around 350nm
Applied Physics Letters, 2004Co-Authors: Tao Wang, R Butte, R J Lynch, P J Parbrook, A Alyamani, D Sanvitto, D M Whittaker, M S SkolnickAbstract:Al0.49Ga0.51N∕Al0.16Ga0.84N distributed Bragg reflectors (DBRs), designed for the ultraviolet spectral region, are reported. The crack-free structures are grown on sapphire substrates by metalorganic chemical vapor deposition. A peak reflectivity of 91% at 353nm with a stop-band width of 17nm was obtained at 300K using a 25pair DBR. Structures at 6nm shorter wavelength show asymmetric spectra, a narrower stop band, and slightly decreased peak reflectivity. By studying the spectra as a function of temperature, the degradation is shown to arise from Internal Absorption at short wavelengths. Simulations based on transfer matrix theory agree well with the experimental data.
Tao Wang - One of the best experts on this subject based on the ideXlab platform.
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High-reflectivity AlxGa1−xN∕AlyGa1−yN distributed Bragg reflectors with peak wavelength around 350nm
Applied Physics Letters, 2004Co-Authors: Tao Wang, R Butte, R J Lynch, P J Parbrook, A Alyamani, D Sanvitto, D M Whittaker, M S SkolnickAbstract:Al0.49Ga0.51N∕Al0.16Ga0.84N distributed Bragg reflectors (DBRs), designed for the ultraviolet spectral region, are reported. The crack-free structures are grown on sapphire substrates by metalorganic chemical vapor deposition. A peak reflectivity of 91% at 353nm with a stop-band width of 17nm was obtained at 300K using a 25pair DBR. Structures at 6nm shorter wavelength show asymmetric spectra, a narrower stop band, and slightly decreased peak reflectivity. By studying the spectra as a function of temperature, the degradation is shown to arise from Internal Absorption at short wavelengths. Simulations based on transfer matrix theory agree well with the experimental data.
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high reflectivity alxga1 xn alyga1 yn distributed bragg reflectors with peak wavelength around 350nm
Applied Physics Letters, 2004Co-Authors: Tao Wang, R Butte, R J Lynch, P J Parbrook, A Alyamani, D Sanvitto, D M Whittaker, M S SkolnickAbstract:Al0.49Ga0.51N∕Al0.16Ga0.84N distributed Bragg reflectors (DBRs), designed for the ultraviolet spectral region, are reported. The crack-free structures are grown on sapphire substrates by metalorganic chemical vapor deposition. A peak reflectivity of 91% at 353nm with a stop-band width of 17nm was obtained at 300K using a 25pair DBR. Structures at 6nm shorter wavelength show asymmetric spectra, a narrower stop band, and slightly decreased peak reflectivity. By studying the spectra as a function of temperature, the degradation is shown to arise from Internal Absorption at short wavelengths. Simulations based on transfer matrix theory agree well with the experimental data.
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Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes
Journal of Crystal Growth, 2001Co-Authors: Tao Wang, Yuhuai Liu, Y.b Lee, Y. Izumi, Jie Bai, Shiro SakaiAbstract:Abstract A high-performance AlGaN/GaN-based ultraviolet (UV) light-emitting diode (LED) is successfully fabricated on sapphire substrate by metal-organic-chemical-vapor-deposition technique. Generally, a p–n junction is grown on a thick GaN layer on sapphire substrate, which results in a strong Internal-Absorption effect. Simultaneously, a thick AlGaN cladding layer on the GaN layer also easily produces crack. In order to avoid the Internal Absorption, a thick AlGaN layer is immediately introduced on a thin low-temperature GaN buffer (LT GaN buffer) instead of a thick GaN layer, which successfully avoids crack formation. However, an enhanced lattice-mismatch of AlGaN/LT GaN buffer/sapphire compared with that of GaN/sapphire might result in an enhanced dislocation density, which leads to the degraded performance of UV-LED. An AlGaN/GaN supperlattice that is applied in UV-LED instead of the thick AlGaN layer strongly decreases the dislocation density, confirmed by transmission electron microscope. Furthermore, this AlGaN/GaN supperlattice successfully avoids crack formation. Consequently, the optical power of UV-LED is greatly increased. Based on the above results, we successfully fabricate a crack-free UV-LED with a high performance.
P J Parbrook - One of the best experts on this subject based on the ideXlab platform.
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High-reflectivity AlxGa1−xN∕AlyGa1−yN distributed Bragg reflectors with peak wavelength around 350nm
Applied Physics Letters, 2004Co-Authors: Tao Wang, R Butte, R J Lynch, P J Parbrook, A Alyamani, D Sanvitto, D M Whittaker, M S SkolnickAbstract:Al0.49Ga0.51N∕Al0.16Ga0.84N distributed Bragg reflectors (DBRs), designed for the ultraviolet spectral region, are reported. The crack-free structures are grown on sapphire substrates by metalorganic chemical vapor deposition. A peak reflectivity of 91% at 353nm with a stop-band width of 17nm was obtained at 300K using a 25pair DBR. Structures at 6nm shorter wavelength show asymmetric spectra, a narrower stop band, and slightly decreased peak reflectivity. By studying the spectra as a function of temperature, the degradation is shown to arise from Internal Absorption at short wavelengths. Simulations based on transfer matrix theory agree well with the experimental data.
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high reflectivity alxga1 xn alyga1 yn distributed bragg reflectors with peak wavelength around 350nm
Applied Physics Letters, 2004Co-Authors: Tao Wang, R Butte, R J Lynch, P J Parbrook, A Alyamani, D Sanvitto, D M Whittaker, M S SkolnickAbstract:Al0.49Ga0.51N∕Al0.16Ga0.84N distributed Bragg reflectors (DBRs), designed for the ultraviolet spectral region, are reported. The crack-free structures are grown on sapphire substrates by metalorganic chemical vapor deposition. A peak reflectivity of 91% at 353nm with a stop-band width of 17nm was obtained at 300K using a 25pair DBR. Structures at 6nm shorter wavelength show asymmetric spectra, a narrower stop band, and slightly decreased peak reflectivity. By studying the spectra as a function of temperature, the degradation is shown to arise from Internal Absorption at short wavelengths. Simulations based on transfer matrix theory agree well with the experimental data.
D Sanvitto - One of the best experts on this subject based on the ideXlab platform.
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High-reflectivity AlxGa1−xN∕AlyGa1−yN distributed Bragg reflectors with peak wavelength around 350nm
Applied Physics Letters, 2004Co-Authors: Tao Wang, R Butte, R J Lynch, P J Parbrook, A Alyamani, D Sanvitto, D M Whittaker, M S SkolnickAbstract:Al0.49Ga0.51N∕Al0.16Ga0.84N distributed Bragg reflectors (DBRs), designed for the ultraviolet spectral region, are reported. The crack-free structures are grown on sapphire substrates by metalorganic chemical vapor deposition. A peak reflectivity of 91% at 353nm with a stop-band width of 17nm was obtained at 300K using a 25pair DBR. Structures at 6nm shorter wavelength show asymmetric spectra, a narrower stop band, and slightly decreased peak reflectivity. By studying the spectra as a function of temperature, the degradation is shown to arise from Internal Absorption at short wavelengths. Simulations based on transfer matrix theory agree well with the experimental data.
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high reflectivity alxga1 xn alyga1 yn distributed bragg reflectors with peak wavelength around 350nm
Applied Physics Letters, 2004Co-Authors: Tao Wang, R Butte, R J Lynch, P J Parbrook, A Alyamani, D Sanvitto, D M Whittaker, M S SkolnickAbstract:Al0.49Ga0.51N∕Al0.16Ga0.84N distributed Bragg reflectors (DBRs), designed for the ultraviolet spectral region, are reported. The crack-free structures are grown on sapphire substrates by metalorganic chemical vapor deposition. A peak reflectivity of 91% at 353nm with a stop-band width of 17nm was obtained at 300K using a 25pair DBR. Structures at 6nm shorter wavelength show asymmetric spectra, a narrower stop band, and slightly decreased peak reflectivity. By studying the spectra as a function of temperature, the degradation is shown to arise from Internal Absorption at short wavelengths. Simulations based on transfer matrix theory agree well with the experimental data.
R Butte - One of the best experts on this subject based on the ideXlab platform.
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High-reflectivity AlxGa1−xN∕AlyGa1−yN distributed Bragg reflectors with peak wavelength around 350nm
Applied Physics Letters, 2004Co-Authors: Tao Wang, R Butte, R J Lynch, P J Parbrook, A Alyamani, D Sanvitto, D M Whittaker, M S SkolnickAbstract:Al0.49Ga0.51N∕Al0.16Ga0.84N distributed Bragg reflectors (DBRs), designed for the ultraviolet spectral region, are reported. The crack-free structures are grown on sapphire substrates by metalorganic chemical vapor deposition. A peak reflectivity of 91% at 353nm with a stop-band width of 17nm was obtained at 300K using a 25pair DBR. Structures at 6nm shorter wavelength show asymmetric spectra, a narrower stop band, and slightly decreased peak reflectivity. By studying the spectra as a function of temperature, the degradation is shown to arise from Internal Absorption at short wavelengths. Simulations based on transfer matrix theory agree well with the experimental data.
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high reflectivity alxga1 xn alyga1 yn distributed bragg reflectors with peak wavelength around 350nm
Applied Physics Letters, 2004Co-Authors: Tao Wang, R Butte, R J Lynch, P J Parbrook, A Alyamani, D Sanvitto, D M Whittaker, M S SkolnickAbstract:Al0.49Ga0.51N∕Al0.16Ga0.84N distributed Bragg reflectors (DBRs), designed for the ultraviolet spectral region, are reported. The crack-free structures are grown on sapphire substrates by metalorganic chemical vapor deposition. A peak reflectivity of 91% at 353nm with a stop-band width of 17nm was obtained at 300K using a 25pair DBR. Structures at 6nm shorter wavelength show asymmetric spectra, a narrower stop band, and slightly decreased peak reflectivity. By studying the spectra as a function of temperature, the degradation is shown to arise from Internal Absorption at short wavelengths. Simulations based on transfer matrix theory agree well with the experimental data.