The Experts below are selected from a list of 261 Experts worldwide ranked by ideXlab platform
Sergei Manzhos - One of the best experts on this subject based on the ideXlab platform.
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dopant dopant interactions in beryllium doped indium gallium arsenide an ab initio study
Journal of Materials Research, 2018Co-Authors: Vadym V Kulish, Francis Benistant, Sergei ManzhosAbstract:We present an ab initio study of dopant-dopant interactions in beryllium-doped InGaAs. We consider defect formation energies of various Interstitial and substitutional defects and their combinations. We find that all substitutional-substitutional interactions can be neglected. On the other hand, interactions involving an Interstitial defect are significant. Specially, Interstitial Be is stabilized by about 0.9/1.0 eV in the presence of one/two BeGa substitutionals. Ga Interstitial is also substantially stabilized by Be Interstitials. Two Be Interstitials can form a metastable Be-Be-Ga complex with a dissociation energy of 0.26 eV/Be. Therefore, Interstitial defects and defect-defect interactions should be considered in accurate models of Be doped InGaAs. We suggest that In and Ga should be treated as separate atoms and not lumped into a single effective group III element, as has been done before. We identified dopant-centred states which indicate the presence of other charge states at finite temperatures, specifically, the presence of Beint+1 (as opposed to Beint+2 at 0K).
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Dopant-dopant interactions in beryllium doped indium gallium arsenide: An ab initio study
Journal of Materials Research, 2018Co-Authors: Vadym V Kulish, Francis Benistant, Wenyuan Liu, Sergei ManzhosAbstract:We present an ab initio study of dopant-dopant interactions in beryllium-doped InGaAs. We consider defect formation energies of various Interstitial and substitutional defects and their combinations. We find that all substitutional-substitutional interactions could be neglected. On the other hand, interactions involving an Interstitial defect are significant. Specially, Interstitial Be is stabilized by about 0.9/1.0 eV in the presence of one/two Be_Ga substitutionals. Ga Interstitial is also substantially stabilized by Be substitutionals. Two Be Interstitials can form a metastable Be-Be-Ga complex with a dissociation energy of 0.26 eV/Be. Therefore, Interstitial defects and defect-defect interactions should be considered in accurate models of Be-doped InGaAs. We suggest that In and Ga should be treated as separate atoms and not lumped into a single effective group III element, as has been done before. We identified dopant-centred states which indicate the presence of other charge states at finite temperatures, specifically, the presence of Be_int^+1 (as opposed to Be_int^+2 at 0 K).
P A Stolk - One of the best experts on this subject based on the ideXlab platform.
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physical mechanisms of transient enhanced dopant diffusion in ion implanted silicon
Journal of Applied Physics, 1997Co-Authors: P A Stolk, H.-j. Gossmann, C. S. Rafferty, H. S. Luftman, D J Eaglesham, D C Jacobson, J M Poate, G H Gilmer, M Jaraiz, T E HaynesAbstract:Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess Interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5×1012 to 1×1014/cm2 evolves into a distribution of {311} Interstitial agglomerates during the initial annealing stages at 670–815 °C. The excess Interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of Interstitials from the damage region involves the dissolution of {311} defects during Ostwald ripening with an activation energy of 3.8±0.2 eV. The excess Interstitials drive substitutional B into electric...
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Properties of Point-Defects in Si for Process Modeling
MRS Online Proceedings Library, 1995Co-Authors: H.-j. Gossmann, C. S. Rafferty, T. K. Mogi, P A Stolk, D J Eaglesham, J M Poate, G H Gilmer, H. H. Vuong, M. O. ThompsonAbstract:The development of future Si device technologies will rely extensively on modeling, requiring truly predictive tools. Here we focus on the front-end processes, during which ion-implantation and annealing create 3-D impurity profiles that determine crucial electrical device parameters. The final configuration is the result of a complex interaction of dopant atoms with Si self-Interstitials and vacancies, which themselves interact with each other as well as with the implantation-induced damage and interfaces. Predictive modeling requires for all these processes a solid understanding of the physical phenomena as well as accurate quantitative information. Si self-Interstitials and vacancies are not observable directly in an experiment, but only via their interactions with some other physical quantity of the sample. We review our work employing dopant atoms in δ-doping superlattices (δ-DSL) that yield directly the time averaged depth profiles of Si native point defects during a particular processing sequence. This approach is uniquely suited for giving insights into the interplay of point defects in Si, providing crosschecks for atomistic calculations as well as parameters for process simulators. We describe experiments to extract Interstitial and vacancy parameters and discuss the influence of intrinsic and extrinsic Interstitial traps, as well as of the annealing environment, on the native point defect population. The latter allows to place certain bounds on the Interstitial vacancy recombination coefficient as well as the ratio of Interstitial and vacancy equilibrium concentrations.
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carbon incorporation in silicon for suppressing Interstitial enhanced boron diffusion
Applied Physics Letters, 1995Co-Authors: P A Stolk, H.-j. Gossmann, D J Eaglesham, J M PoateAbstract:The effect of substitutional C on Interstitial‐enhanced B diffusion in Si has been investigated. Substitutional C was incorporated into B doped Si superlattices using molecular‐beam‐epitaxial growth under a background of acetylene gas. Excess Si self‐Interstitials were generated by near‐surface 5×1013/cm2, 40 keV Si implants and diffused at 790 °C. The Interstitial‐enhanced diffusion of the B marker layers is fully suppressed for C concentrations of 2×1019/cm3, thus demonstrating that substitutional C acts as a trap for Interstitials in crystalline Si. Uniform C incorporation of 5×1018/cm2 significantly reduces the transient enhanced diffusion of a typical B junction implant without perturbing its electrical activity.
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trap limited Interstitial diffusion and enhanced boron clustering in silicon
Applied Physics Letters, 1995Co-Authors: P A Stolk, H.-j. Gossmann, D J Eaglesham, D C Jacobson, J M Poate, H. S. LuftmanAbstract:Boron doped superlattices have been used to detect the diffusion of self‐Interstitials in Si. Interstitials were generated in the near‐surface region by 40 keV Si implantation followed by diffusion at 670–790 °C. The Interstitial diffusion profile at 670 °C is stationary for t≤1 h, demonstrating that the penetration depth of Interstitials is limited by trapping. The concentration of traps is estimated to be ∼1017/cm3. For sufficiently long annealing times, Interstitials diffuse beyond the trapping length with an effective trap‐limited diffusivity ranging from ∼6×10−15 cm2/s at 670 °C to ∼1×10−12 cm2/s at 790 °C. The high Interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit.
J M Poate - One of the best experts on this subject based on the ideXlab platform.
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physical mechanisms of transient enhanced dopant diffusion in ion implanted silicon
Journal of Applied Physics, 1997Co-Authors: P A Stolk, H.-j. Gossmann, C. S. Rafferty, H. S. Luftman, D J Eaglesham, D C Jacobson, J M Poate, G H Gilmer, M Jaraiz, T E HaynesAbstract:Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess Interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5×1012 to 1×1014/cm2 evolves into a distribution of {311} Interstitial agglomerates during the initial annealing stages at 670–815 °C. The excess Interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of Interstitials from the damage region involves the dissolution of {311} defects during Ostwald ripening with an activation energy of 3.8±0.2 eV. The excess Interstitials drive substitutional B into electric...
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Properties of Point-Defects in Si for Process Modeling
MRS Online Proceedings Library, 1995Co-Authors: H.-j. Gossmann, C. S. Rafferty, T. K. Mogi, P A Stolk, D J Eaglesham, J M Poate, G H Gilmer, H. H. Vuong, M. O. ThompsonAbstract:The development of future Si device technologies will rely extensively on modeling, requiring truly predictive tools. Here we focus on the front-end processes, during which ion-implantation and annealing create 3-D impurity profiles that determine crucial electrical device parameters. The final configuration is the result of a complex interaction of dopant atoms with Si self-Interstitials and vacancies, which themselves interact with each other as well as with the implantation-induced damage and interfaces. Predictive modeling requires for all these processes a solid understanding of the physical phenomena as well as accurate quantitative information. Si self-Interstitials and vacancies are not observable directly in an experiment, but only via their interactions with some other physical quantity of the sample. We review our work employing dopant atoms in δ-doping superlattices (δ-DSL) that yield directly the time averaged depth profiles of Si native point defects during a particular processing sequence. This approach is uniquely suited for giving insights into the interplay of point defects in Si, providing crosschecks for atomistic calculations as well as parameters for process simulators. We describe experiments to extract Interstitial and vacancy parameters and discuss the influence of intrinsic and extrinsic Interstitial traps, as well as of the annealing environment, on the native point defect population. The latter allows to place certain bounds on the Interstitial vacancy recombination coefficient as well as the ratio of Interstitial and vacancy equilibrium concentrations.
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carbon incorporation in silicon for suppressing Interstitial enhanced boron diffusion
Applied Physics Letters, 1995Co-Authors: P A Stolk, H.-j. Gossmann, D J Eaglesham, J M PoateAbstract:The effect of substitutional C on Interstitial‐enhanced B diffusion in Si has been investigated. Substitutional C was incorporated into B doped Si superlattices using molecular‐beam‐epitaxial growth under a background of acetylene gas. Excess Si self‐Interstitials were generated by near‐surface 5×1013/cm2, 40 keV Si implants and diffused at 790 °C. The Interstitial‐enhanced diffusion of the B marker layers is fully suppressed for C concentrations of 2×1019/cm3, thus demonstrating that substitutional C acts as a trap for Interstitials in crystalline Si. Uniform C incorporation of 5×1018/cm2 significantly reduces the transient enhanced diffusion of a typical B junction implant without perturbing its electrical activity.
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trap limited Interstitial diffusion and enhanced boron clustering in silicon
Applied Physics Letters, 1995Co-Authors: P A Stolk, H.-j. Gossmann, D J Eaglesham, D C Jacobson, J M Poate, H. S. LuftmanAbstract:Boron doped superlattices have been used to detect the diffusion of self‐Interstitials in Si. Interstitials were generated in the near‐surface region by 40 keV Si implantation followed by diffusion at 670–790 °C. The Interstitial diffusion profile at 670 °C is stationary for t≤1 h, demonstrating that the penetration depth of Interstitials is limited by trapping. The concentration of traps is estimated to be ∼1017/cm3. For sufficiently long annealing times, Interstitials diffuse beyond the trapping length with an effective trap‐limited diffusivity ranging from ∼6×10−15 cm2/s at 670 °C to ∼1×10−12 cm2/s at 790 °C. The high Interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit.
H.-j. Gossmann - One of the best experts on this subject based on the ideXlab platform.
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physical mechanisms of transient enhanced dopant diffusion in ion implanted silicon
Journal of Applied Physics, 1997Co-Authors: P A Stolk, H.-j. Gossmann, C. S. Rafferty, H. S. Luftman, D J Eaglesham, D C Jacobson, J M Poate, G H Gilmer, M Jaraiz, T E HaynesAbstract:Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess Interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5×1012 to 1×1014/cm2 evolves into a distribution of {311} Interstitial agglomerates during the initial annealing stages at 670–815 °C. The excess Interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of Interstitials from the damage region involves the dissolution of {311} defects during Ostwald ripening with an activation energy of 3.8±0.2 eV. The excess Interstitials drive substitutional B into electric...
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Properties of Point-Defects in Si for Process Modeling
MRS Online Proceedings Library, 1995Co-Authors: H.-j. Gossmann, C. S. Rafferty, T. K. Mogi, P A Stolk, D J Eaglesham, J M Poate, G H Gilmer, H. H. Vuong, M. O. ThompsonAbstract:The development of future Si device technologies will rely extensively on modeling, requiring truly predictive tools. Here we focus on the front-end processes, during which ion-implantation and annealing create 3-D impurity profiles that determine crucial electrical device parameters. The final configuration is the result of a complex interaction of dopant atoms with Si self-Interstitials and vacancies, which themselves interact with each other as well as with the implantation-induced damage and interfaces. Predictive modeling requires for all these processes a solid understanding of the physical phenomena as well as accurate quantitative information. Si self-Interstitials and vacancies are not observable directly in an experiment, but only via their interactions with some other physical quantity of the sample. We review our work employing dopant atoms in δ-doping superlattices (δ-DSL) that yield directly the time averaged depth profiles of Si native point defects during a particular processing sequence. This approach is uniquely suited for giving insights into the interplay of point defects in Si, providing crosschecks for atomistic calculations as well as parameters for process simulators. We describe experiments to extract Interstitial and vacancy parameters and discuss the influence of intrinsic and extrinsic Interstitial traps, as well as of the annealing environment, on the native point defect population. The latter allows to place certain bounds on the Interstitial vacancy recombination coefficient as well as the ratio of Interstitial and vacancy equilibrium concentrations.
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Behavior of intrinsic Si point defects during annealing in vacuum
Applied Physics Letters, 1995Co-Authors: H.-j. Gossmann, C. S. Rafferty, F. C. Unterwald, T. Boone, T. K. Mogi, Michael O. Thompson, H. S. LuftmanAbstract:Using B and Sb doped Si(100) doping superlattices (DSL) as tracers of native Si point defect behavior it is shown that vacuum annealing at 810 °C leads to a depletion of Si self‐Interstitials, with their smallest concentration at the surface, but does not affect the vacancy population. At a fixed depth, the Interstitial concentration drops for increasing annealing times; for a given time, the Interstitial concentration increases into the sample as a function of depth. Inert anneals of a B‐DSL in Ar show flat Interstitial profiles. Apparently, the vacuum anneal makes the surface a better sink for Interstitials than an inert Ar anneal, leading to an equilibrium Interstitial concentration below the value in the bulk and establishing a net outflow of Interstitials to the surface. The absence of a response of the vacancy population yields a lower limit on the Interstitial‐vacancy recombination time of 104 s at 810 °C. Process simulation of this scenario captures the essential trends of the experimental data.
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carbon incorporation in silicon for suppressing Interstitial enhanced boron diffusion
Applied Physics Letters, 1995Co-Authors: P A Stolk, H.-j. Gossmann, D J Eaglesham, J M PoateAbstract:The effect of substitutional C on Interstitial‐enhanced B diffusion in Si has been investigated. Substitutional C was incorporated into B doped Si superlattices using molecular‐beam‐epitaxial growth under a background of acetylene gas. Excess Si self‐Interstitials were generated by near‐surface 5×1013/cm2, 40 keV Si implants and diffused at 790 °C. The Interstitial‐enhanced diffusion of the B marker layers is fully suppressed for C concentrations of 2×1019/cm3, thus demonstrating that substitutional C acts as a trap for Interstitials in crystalline Si. Uniform C incorporation of 5×1018/cm2 significantly reduces the transient enhanced diffusion of a typical B junction implant without perturbing its electrical activity.
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trap limited Interstitial diffusion and enhanced boron clustering in silicon
Applied Physics Letters, 1995Co-Authors: P A Stolk, H.-j. Gossmann, D J Eaglesham, D C Jacobson, J M Poate, H. S. LuftmanAbstract:Boron doped superlattices have been used to detect the diffusion of self‐Interstitials in Si. Interstitials were generated in the near‐surface region by 40 keV Si implantation followed by diffusion at 670–790 °C. The Interstitial diffusion profile at 670 °C is stationary for t≤1 h, demonstrating that the penetration depth of Interstitials is limited by trapping. The concentration of traps is estimated to be ∼1017/cm3. For sufficiently long annealing times, Interstitials diffuse beyond the trapping length with an effective trap‐limited diffusivity ranging from ∼6×10−15 cm2/s at 670 °C to ∼1×10−12 cm2/s at 790 °C. The high Interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit.
H. S. Luftman - One of the best experts on this subject based on the ideXlab platform.
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physical mechanisms of transient enhanced dopant diffusion in ion implanted silicon
Journal of Applied Physics, 1997Co-Authors: P A Stolk, H.-j. Gossmann, C. S. Rafferty, H. S. Luftman, D J Eaglesham, D C Jacobson, J M Poate, G H Gilmer, M Jaraiz, T E HaynesAbstract:Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess Interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5×1012 to 1×1014/cm2 evolves into a distribution of {311} Interstitial agglomerates during the initial annealing stages at 670–815 °C. The excess Interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of Interstitials from the damage region involves the dissolution of {311} defects during Ostwald ripening with an activation energy of 3.8±0.2 eV. The excess Interstitials drive substitutional B into electric...
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Behavior of intrinsic Si point defects during annealing in vacuum
Applied Physics Letters, 1995Co-Authors: H.-j. Gossmann, C. S. Rafferty, F. C. Unterwald, T. Boone, T. K. Mogi, Michael O. Thompson, H. S. LuftmanAbstract:Using B and Sb doped Si(100) doping superlattices (DSL) as tracers of native Si point defect behavior it is shown that vacuum annealing at 810 °C leads to a depletion of Si self‐Interstitials, with their smallest concentration at the surface, but does not affect the vacancy population. At a fixed depth, the Interstitial concentration drops for increasing annealing times; for a given time, the Interstitial concentration increases into the sample as a function of depth. Inert anneals of a B‐DSL in Ar show flat Interstitial profiles. Apparently, the vacuum anneal makes the surface a better sink for Interstitials than an inert Ar anneal, leading to an equilibrium Interstitial concentration below the value in the bulk and establishing a net outflow of Interstitials to the surface. The absence of a response of the vacancy population yields a lower limit on the Interstitial‐vacancy recombination time of 104 s at 810 °C. Process simulation of this scenario captures the essential trends of the experimental data.
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trap limited Interstitial diffusion and enhanced boron clustering in silicon
Applied Physics Letters, 1995Co-Authors: P A Stolk, H.-j. Gossmann, D J Eaglesham, D C Jacobson, J M Poate, H. S. LuftmanAbstract:Boron doped superlattices have been used to detect the diffusion of self‐Interstitials in Si. Interstitials were generated in the near‐surface region by 40 keV Si implantation followed by diffusion at 670–790 °C. The Interstitial diffusion profile at 670 °C is stationary for t≤1 h, demonstrating that the penetration depth of Interstitials is limited by trapping. The concentration of traps is estimated to be ∼1017/cm3. For sufficiently long annealing times, Interstitials diffuse beyond the trapping length with an effective trap‐limited diffusivity ranging from ∼6×10−15 cm2/s at 670 °C to ∼1×10−12 cm2/s at 790 °C. The high Interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit.
