The Experts below are selected from a list of 162 Experts worldwide ranked by ideXlab platform
Ming Wei Chang - One of the best experts on this subject based on the ideXlab platform.
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a nanowire wo3 humidity sensor integrated with micro heater and Inverting Amplifier circuit on chip manufactured using cmos mems technique
Sensors and Actuators B-chemical, 2007Co-Authors: Chingliang Dai, Mao Chen Liu, Fu Song Chen, Ming Wei ChangAbstract:Abstract The fabrication of a nanowire WO3 humidity sensor integrated with an Inverting Amplifier circuit and a micro-heater on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process have been implemented. The humidity sensor is composed of a sensing resistor and a humidity sensing film. Tungsten trioxide prepared by a sol–gel method is adopted as the humidity sensing film. The fabrication of the humidity sensor requires a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the humidity sensing film is coated over the sensing resistor. The humidity sensor, which is a resistive type, changes the resistance when the sensing film adsorbs or desorbs water vapor. An Inverting Amplifier circuit is utilized to convert the resistance of the humidity sensor into the voltage output. The micro-heater is utilized to provide a super-ambient working temperature to the humidity sensor, which can avoid the humidity sensor to generate the signal drift. Experimental results show that the sensitivity of the humidity sensor is about 4.5 mV/% RH at 60 °C.
Chingliang Dai - One of the best experts on this subject based on the ideXlab platform.
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a nanowire wo3 humidity sensor integrated with micro heater and Inverting Amplifier circuit on chip manufactured using cmos mems technique
Sensors and Actuators B-chemical, 2007Co-Authors: Chingliang Dai, Mao Chen Liu, Fu Song Chen, Ming Wei ChangAbstract:Abstract The fabrication of a nanowire WO3 humidity sensor integrated with an Inverting Amplifier circuit and a micro-heater on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process have been implemented. The humidity sensor is composed of a sensing resistor and a humidity sensing film. Tungsten trioxide prepared by a sol–gel method is adopted as the humidity sensing film. The fabrication of the humidity sensor requires a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the humidity sensing film is coated over the sensing resistor. The humidity sensor, which is a resistive type, changes the resistance when the sensing film adsorbs or desorbs water vapor. An Inverting Amplifier circuit is utilized to convert the resistance of the humidity sensor into the voltage output. The micro-heater is utilized to provide a super-ambient working temperature to the humidity sensor, which can avoid the humidity sensor to generate the signal drift. Experimental results show that the sensitivity of the humidity sensor is about 4.5 mV/% RH at 60 °C.
Fu Song Chen - One of the best experts on this subject based on the ideXlab platform.
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a nanowire wo3 humidity sensor integrated with micro heater and Inverting Amplifier circuit on chip manufactured using cmos mems technique
Sensors and Actuators B-chemical, 2007Co-Authors: Chingliang Dai, Mao Chen Liu, Fu Song Chen, Ming Wei ChangAbstract:Abstract The fabrication of a nanowire WO3 humidity sensor integrated with an Inverting Amplifier circuit and a micro-heater on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process have been implemented. The humidity sensor is composed of a sensing resistor and a humidity sensing film. Tungsten trioxide prepared by a sol–gel method is adopted as the humidity sensing film. The fabrication of the humidity sensor requires a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the humidity sensing film is coated over the sensing resistor. The humidity sensor, which is a resistive type, changes the resistance when the sensing film adsorbs or desorbs water vapor. An Inverting Amplifier circuit is utilized to convert the resistance of the humidity sensor into the voltage output. The micro-heater is utilized to provide a super-ambient working temperature to the humidity sensor, which can avoid the humidity sensor to generate the signal drift. Experimental results show that the sensitivity of the humidity sensor is about 4.5 mV/% RH at 60 °C.
Mao Chen Liu - One of the best experts on this subject based on the ideXlab platform.
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a nanowire wo3 humidity sensor integrated with micro heater and Inverting Amplifier circuit on chip manufactured using cmos mems technique
Sensors and Actuators B-chemical, 2007Co-Authors: Chingliang Dai, Mao Chen Liu, Fu Song Chen, Ming Wei ChangAbstract:Abstract The fabrication of a nanowire WO3 humidity sensor integrated with an Inverting Amplifier circuit and a micro-heater on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process have been implemented. The humidity sensor is composed of a sensing resistor and a humidity sensing film. Tungsten trioxide prepared by a sol–gel method is adopted as the humidity sensing film. The fabrication of the humidity sensor requires a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the humidity sensing film is coated over the sensing resistor. The humidity sensor, which is a resistive type, changes the resistance when the sensing film adsorbs or desorbs water vapor. An Inverting Amplifier circuit is utilized to convert the resistance of the humidity sensor into the voltage output. The micro-heater is utilized to provide a super-ambient working temperature to the humidity sensor, which can avoid the humidity sensor to generate the signal drift. Experimental results show that the sensitivity of the humidity sensor is about 4.5 mV/% RH at 60 °C.
Dattaguru V Kamath - One of the best experts on this subject based on the ideXlab platform.
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active compensation of cfoa based non Inverting Amplifier
2015Co-Authors: Dattaguru V Kamath, A AshokaAbstract:In this paper, we consider active compensation techniques using a voltage buffer to enhance the bandwidth of current feedback operational Amplifier (CFOA) based finite gain non-Inverting voltage Amplifier. The use of feedforward capacitor in addition to voltage buffer is shown to achieve minimum phase error in the resulting frequency response. The proposed circuits require one additional CFOA/ capacitor. The effect of finite output impedance at z terminal, input resistance at x terminal, and current mirror pole of the CFOA are studied. The circuits considered have been simulated in PSPICE using a behavioral macro-model of the CFOA as well as that of a practical CFOA AD 844.
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passive compensation techniques to enhance bandwidth ofcfoa based non Inverting Amplifier
2015Co-Authors: Dattaguru V KamathAbstract:In this paper, we consider passive compensation techniques to enhance the bandwidth of current feedback operational Amplifier (CFOA) based finite gain non-Inverting voltage Amplifier. The applicability of Bayard’s passive compensation schemes using capacitors for CFOA based non-Inverting voltage Amplifier is discussed. The use of feedback capacitor alone for realizing Butterworth response is shown to be not feasible. On other hand, the use of both feedforward and feedback capacitor for pole-zero cancellation is shown to improve the bandwidth and the condition for the same has been derived. The use of feedforward capacitor alone is shown to be useful for achieving minimum phase error in the resulting frequency response. The proposed compensation techniques are attractive as they need one or two capacitors. The two-pole model considering the current mirror pole and the pole due to the output capacitance and resistance of the CFOA at z output and input resistance at x terminal have been considered in the analysis. The non-Inverting voltage Amplifier circuits using passive compensation techniques have been simulated in PSPICE using a behavioral macro-model as well as that of a practical macro-model of CFOA IC AD 844.
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bandwidth enhancement of cfoa based Inverting Amplifier
2014 International Conference on Electronics and Communication Systems ICECS 2014, 2014Co-Authors: Dattaguru V Kamath, P Ananda V Mohan, K GopalakrishnaprabhuAbstract:In this paper, we present an active compensation method using a voltage buffer to enhance the bandwidth of current feedback operational Amplifier (CFOA) based finite gain Inverting voltage Amplifier for use as stand-alone Amplifier. The use of feedback capacitor to this circuit for realizing Butterworth response is also considered. The proposed circuits require one additional CFOA/ capacitor. The effect of finite output impedance at z terminal, input resistance at x terminal, and current mirror pole of the CFOA are studied. The circuits considered have been simulated in PSPICE using a behavioral macro-model of the CFOA as well as that of a practical CFOA AD 844.
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bandwidth enhancement of Inverting Amplifier using composite cfoa block
2014Co-Authors: Dattaguru V KamathAbstract:In this paper, an active compensation method using two current feedback operational Amplifiers (CFOAs) to enhance the bandwidth of finite gain Inverting voltage Amplifier for use as stand-alone Amplifier is presented. It is also shown that the inexpensive passive compensation technique can be applied to composite CFOA based Amplifier to improve the phase response in addition to bandwidth enhancement. The proposed circuits require one additional CFOA/ capacitor. The effect of finite output impedance at z terminal, input resistance at x terminal and current mirror pole of the CFOA is considered in the analysis. The proposed circuits have been simulated in PSPICE using a behavioral macro-model of the CFOA as well as that of a practical CFOA AD 844.
