Laser Pumping

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Uwe Griebner - One of the best experts on this subject based on the ideXlab platform.

  • Continuous-wave Laser performance of Tm:LuVO4 under Ti:sapphire Laser Pumping
    Laser Physics, 2014
    Co-Authors: Fabrizio Di Trapani, Antonio Agnesi, Xavier Mateos, Jiyang Wang, Uwe Griebner, Valentin Petrov, H J Zhang, Haohai Yu
    Abstract:

    We investigate the cw Laser performance of Tm:LuV O4 crystals pumped with tunable polarized source and report a roughly twofold improvement to their efficiency with 1 W of output power and broad tunability at room temperature.

  • Continuous-wave Laser performance of Tm:LuVO4 under Ti:sapphire Laser Pumping
    Advanced Solid-State Lasers Congress, 2013
    Co-Authors: Fabrizio Di Trapani, Antonio Agnesi, Xavier Mateos, Huaijin Zhang, Jiyang Wang, Uwe Griebner, Valentin Petrov, Haohai Yu
    Abstract:

    We investigate the cw Laser performance of Tm:LuVO4 crystals pumped with tunable polarized source and report roughly 2 times improvement of the efficiency with 1 W of output power and broad tunability at room temperature.

  • Broad emission band of Yb3+ in the nonlinear Nb:RbTiOPO4 crystal: origin and applications
    Optics Express, 2010
    Co-Authors: J.j. Carvajal, Uwe Griebner, G. Boulon, Gianluca Ciatto, X. Mateos, A. Schmidt, V. Petrov, Alain Brenier, Alexandra Pena, M. C. Pujol
    Abstract:

    By means of micro-structural and optical characterization of the Yb:Nb:RbTiOPO4 crystal, we demonstrated that the broad emission band of Yb3+ in these crystals is due to the large splitting of the ytterbium ground state only, and not to a complex multisite occupation by the ytterbium ions in the crystals. We used this broad emission band to demonstrate wide Laser tuning range and generation of femtosecond Laser pulses. Passive mode-locked Laser operation has been realized by using a semiconductor saturable absorber mirror, generating ultra short Laser pulses of 155 fs, which were very stable in time, under Ti:sapphire Laser Pumping at 1053 nm.

  • Continuous-wave Laser operation of Yb:LuVO 4
    Optics Letters, 2005
    Co-Authors: Junhai Liu, Xavier Mateos, Huaijin Zhang, Jiyang Wang, Minhua Jiang, Uwe Griebner, Valentin Petrov
    Abstract:

    We report on the room-temperature spectroscopic properties and continuous-wave Laser operation of a new Yb:LuVO4 crystal. The peak absorption cross section for the pi-polarization is 8.42 x 10(-20) cm2 at 985 nm, and the stimulated emission cross section at 1020 nm is 1.03 x 10(-20) cm2. An output power of 0.36 W at 1041 nm was obtained with a slope efficiency of 47% by use of Ti:sapphire Laser Pumping. With diode Pumping the output power reached 1.05 W at the highest available incident pump power of 6.8 W.

Leo Esterowitz - One of the best experts on this subject based on the ideXlab platform.

Haohai Yu - One of the best experts on this subject based on the ideXlab platform.

Valentin Petrov - One of the best experts on this subject based on the ideXlab platform.

F Reygarcia - One of the best experts on this subject based on the ideXlab platform.

  • Laser floating zone growth of yb or nd doped lu0 3gd0 7 2sio5 oxyorthosilicate single crystal rods with efficient Laser performance
    Journal of Materials Chemistry C, 2020
    Co-Authors: F Reygarcia, F M Costa, C Zaldo
    Abstract:

    Disordered crystals are being presently developed to enlarge the fluorescence bandwidth of trivalent lanthanides incorporated for generation of ultrashort (femtosecond) Laser pulses in mode-locked oscillators and amplifiers, but crystal disorder induces a reduction of thermal conductivity which hampers the uniform crystal cooling after growth, leading to internal stresses. This is particularly remarkable when using the Laser Floating Zone (LFZ) growth technique; thus so far Laser operation has been obtained only for LFZ-grown crystals with high thermal conductivity (κ ≥ 10 W m−1 °C−1) but without disorder, i.e. YAG, Y2O3 or REVO4. To overcome this limitation we present the LFZ growth of (Lu0.351Gd0.630Yb0.019)2SiO5 and (Lu0.307Gd0.612Nd0.081)2SiO5 refractory (melting point ≈ 1950 °C) oxyorthosilicate single-crystal rods with dimensions suitable for high power diode Laser Pumping, despite these crystals having medium/low thermal conductivity, κ < 4 W m−1 °C−1. Rods with ≈10 mm length and ≈1.75 mm diameter were grown in air under a CO2 Laser at 10 mm h−1. X-ray diffraction analyses confirm the monoclinic C2/c structure of the obtained crystals. For the chosen ≈0.3Lu/0.7Gd ratio some of the crystals are transparent and free of macro-defects. The continuous wave Laser performance of Yb3+ and Nd3+ incorporated ions is demonstrated under Ti-sapphire Laser Pumping in an astigmatism compensated Z-shaped optical cavity. The Laser performance of these LFZ oxyorthosilicates is found to be comparable to that reported in Czochralski (Cz) grown crystals. The faster pulling rate (almost one order of magnitude larger for LFZ than for Cz), the high crystal composition purity, and the absence of crucible or atmosphere control make the LFZ technique a low cost alternative for the present needs of diode Laser pumped mode-locked medium/high power Laser oscillators.