The Experts below are selected from a list of 69069 Experts worldwide ranked by ideXlab platform
Satoshi Yamasaki - One of the best experts on this subject based on the ideXlab platform.
-
formation of step free surfaces on diamond 111 mesas by homoepitaxial Lateral Growth
Japanese Journal of Applied Physics, 2012Co-Authors: Norio Tokuda, Toshiharu Makino, Takao Inokuma, Satoshi YamasakiAbstract:We present a technique for the array formation of atomically step-free diamond surfaces on diamond (111) substrates by microwave plasma-enhanced chemical vapor deposition. With an appropriate choice of plasma conditions, the atomic steps initially present on each mesa surface move by Lateral Growth, and then, atomically step-free surfaces are successfully formed on diamond (111) mesas by microwave plasma-enhanced chemical vapor deposition. The Lateral Growth of diamond (111) films results in the formation of step-free surfaces with device dimensions up to 100 µm square on diamond (111) mesas. A limiting factor in scaling up the size and yield of the step-free mesas is the density of screw dislocations in the diamond substrate.
-
Growth of atomically step free surface on diamond 111 mesas
Diamond and Related Materials, 2010Co-Authors: Norio Tokuda, Satoshi Yamasaki, Hitoshi Umezawa, Kikuo Yamabe, Hideyo OkushiAbstract:Abstract Diamond homoepitaxy by microwave plasma-enhanced chemical vapor deposition was investigated on {111} substrate. Growth at a low CH4/H2 ratio of 0.025% in a gas phase results in the formation of an atomically step-free surface over 10 × 10-µm2 mesas of diamond {111} substrate, when there are no screw dislocations in the mesas. This was achieved through ideal Lateral Growth, in which two-dimensional terrace nucleation was completely suppressed. The application of the selective formation of the step-free surface and the Lateral Growth of diamond films will open the way for the realization of high-quality electronic devices using diamond.
-
atomically flat diamond 111 surface formation by homoepitaxial Lateral Growth
Diamond and Related Materials, 2008Co-Authors: Norio Tokuda, Satoshi Yamasaki, Hitoshi Umezawa, Kikuo Yamabe, Hideyo Okushi, Masahiko OguraAbstract:A process of homoepitaxial Growth of diamond (111) films by microwave plasma-enhanced chemical vapor deposition has been investigated characterizing areas by ex-situ atomic force microscopy. The evolution of surface morphology during a Lateral Growth of (111) diamond was visualized utilizing a mesa structure as a marker. Lateral Growth forms atomically flat surfaces, which show atomically flat terraces over several hundred nm widths and single bilayer steps of (111) diamond.
Norio Tokuda - One of the best experts on this subject based on the ideXlab platform.
-
anisotropic Lateral Growth of homoepitaxial diamond 111 films by plasma enhanced chemical vapor deposition
Japanese Journal of Applied Physics, 2014Co-Authors: Norio Tokuda, Masahiko Ogura, Satoshi Yamsaki, Takao InokumaAbstract:Anisotropic Growth is observed for homoepitaxial diamond (111) films by microwave plasma-enhanced chemical vapor deposition in the Lateral Growth mode. Using ex situ atomic force microscopy, we clearly show the motion of single bi-atomic layer steps owing to homoepitaxial diamond Growth for the first time. An atomistic model of homoepitaxial Lateral diamond Growth is discussed.
-
formation of graphene on diamond structure by graphitization of atomically flat diamond 111 surface
Japanese Journal of Applied Physics, 2013Co-Authors: Norio Tokuda, Toshiharu Makino, Satoshi Yamsaki, Makoto Fukui, Daisuke Takeuchi, Takao InokumaAbstract:We succeeded in the formation of a graphene-on-diamond (GOD) structure by the graphitization of a diamond (111) surface. Before the graphitization, atomically flat diamond (111) surfaces were formed by homoepitaxial Lateral Growth. The graphene layers, which were formed on the atomically flat diamond (111) surfaces horizontally, were observed by cross-sectional high-resolution transmission electron microscopy.
-
formation of step free surfaces on diamond 111 mesas by homoepitaxial Lateral Growth
Japanese Journal of Applied Physics, 2012Co-Authors: Norio Tokuda, Toshiharu Makino, Takao Inokuma, Satoshi YamasakiAbstract:We present a technique for the array formation of atomically step-free diamond surfaces on diamond (111) substrates by microwave plasma-enhanced chemical vapor deposition. With an appropriate choice of plasma conditions, the atomic steps initially present on each mesa surface move by Lateral Growth, and then, atomically step-free surfaces are successfully formed on diamond (111) mesas by microwave plasma-enhanced chemical vapor deposition. The Lateral Growth of diamond (111) films results in the formation of step-free surfaces with device dimensions up to 100 µm square on diamond (111) mesas. A limiting factor in scaling up the size and yield of the step-free mesas is the density of screw dislocations in the diamond substrate.
-
Growth of atomically step free surface on diamond 111 mesas
Diamond and Related Materials, 2010Co-Authors: Norio Tokuda, Satoshi Yamasaki, Hitoshi Umezawa, Kikuo Yamabe, Hideyo OkushiAbstract:Abstract Diamond homoepitaxy by microwave plasma-enhanced chemical vapor deposition was investigated on {111} substrate. Growth at a low CH4/H2 ratio of 0.025% in a gas phase results in the formation of an atomically step-free surface over 10 × 10-µm2 mesas of diamond {111} substrate, when there are no screw dislocations in the mesas. This was achieved through ideal Lateral Growth, in which two-dimensional terrace nucleation was completely suppressed. The application of the selective formation of the step-free surface and the Lateral Growth of diamond films will open the way for the realization of high-quality electronic devices using diamond.
-
atomically flat diamond 111 surface formation by homoepitaxial Lateral Growth
Diamond and Related Materials, 2008Co-Authors: Norio Tokuda, Satoshi Yamasaki, Hitoshi Umezawa, Kikuo Yamabe, Hideyo Okushi, Masahiko OguraAbstract:A process of homoepitaxial Growth of diamond (111) films by microwave plasma-enhanced chemical vapor deposition has been investigated characterizing areas by ex-situ atomic force microscopy. The evolution of surface morphology during a Lateral Growth of (111) diamond was visualized utilizing a mesa structure as a marker. Lateral Growth forms atomically flat surfaces, which show atomically flat terraces over several hundred nm widths and single bilayer steps of (111) diamond.
Hyun Jae Kim - One of the best experts on this subject based on the ideXlab platform.
-
controlled super Lateral Growth of si films for microstructural manipulation and optimization
Physica Status Solidi (a), 1998Co-Authors: M. A. Crowder, Robert S. Sposili, J. P. Leonard, Hyun Jae Kim, Jung H. Yoon, Vikas V. Gupta, Jin H Song, H. S. ChoAbstract:This paper reviews a particular form of pulsed-laser-based thin-film crystallization method referred to as controlled super-Lateral Growth (C-SLG). By systematically manipulating and controlling the locations, shapes, and extent of melting induced by the incident laser pulses, the C-SLG approach — notably in a version referred to as sequential Lateral solidification (SLS) — can lead to realization of a variety of microstructurally designed crystalline Si films with low structural defect densities, including 1. large-grained and grain-boundary-location controlled polycrystalline films, 2. directionally solidified microstructures, or 3. location-controlled single-crystal regions.
-
new excimer laser crystallization method for producing large grained and grain boundary location controlled si films for thin film transistors
Applied Physics Letters, 1996Co-Authors: Hyun Jae KimAbstract:Based on the previously elucidated super Lateral Growth phenomenon, we have developed an excimer‐laser‐crystallization method that produces large‐grained and grain‐boundary‐ location‐controlled Si films on SiO2 and which possesses a wide processing window. For the set of experiments reported in this letter, a patterned SiO2 capping layer on top of Si films is utilized as an anti‐reflective coating in order to induce artificially controlled super‐Lateral Growth in the film upon being irradiated with a single excimer laser pulse. For a simple SiO2 stripe pattern, the occlusion among the Laterally and directionally solidifying grains permits the eventual development of elongated parallel grains with a single perpendicular grain boundary which is localized in the middle of the completely melted regions, provided that the width of the completely molten region is sufficiently narrow so as to avoid the nucleation of solids in the supercooled liquid.
-
on the super Lateral Growth phenomenon observed in excimer laser induced crystallization of thin si films
Applied Physics Letters, 1994Co-Authors: Hyun Jae KimAbstract:This letter reports on the experimental findings, and provides a theoretical description of the super Lateral Growth (SLG) phenomenon observed in the pulsed laser‐induced solidification of amorphous thin Si films on SiO2. Experimentally, we report and elaborate on the isolated single‐crystal disk structure that is observed at the upper threshold of the SLG regime; the structure is revealed as an important microstructural feature for understanding the phenomenon. A theoretical discussion of the SLG phenomenon is provided in terms of the key factors that are suggested by our model—the interface response function of the solid, the nucleation kinetics of the solid, and a highly transient Lateral‐thermal profile near the solid‐melt interface. Our model and analysis point out the important inadequacies associated with the vertical solidification rate/temperature gradient model, which is currently being utilized to explain the excimer laser crystallization of thin Si films on SiO2.
Hitoshi Umezawa - One of the best experts on this subject based on the ideXlab platform.
-
Growth of atomically step free surface on diamond 111 mesas
Diamond and Related Materials, 2010Co-Authors: Norio Tokuda, Satoshi Yamasaki, Hitoshi Umezawa, Kikuo Yamabe, Hideyo OkushiAbstract:Abstract Diamond homoepitaxy by microwave plasma-enhanced chemical vapor deposition was investigated on {111} substrate. Growth at a low CH4/H2 ratio of 0.025% in a gas phase results in the formation of an atomically step-free surface over 10 × 10-µm2 mesas of diamond {111} substrate, when there are no screw dislocations in the mesas. This was achieved through ideal Lateral Growth, in which two-dimensional terrace nucleation was completely suppressed. The application of the selective formation of the step-free surface and the Lateral Growth of diamond films will open the way for the realization of high-quality electronic devices using diamond.
-
atomically flat diamond 111 surface formation by homoepitaxial Lateral Growth
Diamond and Related Materials, 2008Co-Authors: Norio Tokuda, Satoshi Yamasaki, Hitoshi Umezawa, Kikuo Yamabe, Hideyo Okushi, Masahiko OguraAbstract:A process of homoepitaxial Growth of diamond (111) films by microwave plasma-enhanced chemical vapor deposition has been investigated characterizing areas by ex-situ atomic force microscopy. The evolution of surface morphology during a Lateral Growth of (111) diamond was visualized utilizing a mesa structure as a marker. Lateral Growth forms atomically flat surfaces, which show atomically flat terraces over several hundred nm widths and single bilayer steps of (111) diamond.
Kikuo Yamabe - One of the best experts on this subject based on the ideXlab platform.
-
Growth of atomically step free surface on diamond 111 mesas
Diamond and Related Materials, 2010Co-Authors: Norio Tokuda, Satoshi Yamasaki, Hitoshi Umezawa, Kikuo Yamabe, Hideyo OkushiAbstract:Abstract Diamond homoepitaxy by microwave plasma-enhanced chemical vapor deposition was investigated on {111} substrate. Growth at a low CH4/H2 ratio of 0.025% in a gas phase results in the formation of an atomically step-free surface over 10 × 10-µm2 mesas of diamond {111} substrate, when there are no screw dislocations in the mesas. This was achieved through ideal Lateral Growth, in which two-dimensional terrace nucleation was completely suppressed. The application of the selective formation of the step-free surface and the Lateral Growth of diamond films will open the way for the realization of high-quality electronic devices using diamond.
-
atomically flat diamond 111 surface formation by homoepitaxial Lateral Growth
Diamond and Related Materials, 2008Co-Authors: Norio Tokuda, Satoshi Yamasaki, Hitoshi Umezawa, Kikuo Yamabe, Hideyo Okushi, Masahiko OguraAbstract:A process of homoepitaxial Growth of diamond (111) films by microwave plasma-enhanced chemical vapor deposition has been investigated characterizing areas by ex-situ atomic force microscopy. The evolution of surface morphology during a Lateral Growth of (111) diamond was visualized utilizing a mesa structure as a marker. Lateral Growth forms atomically flat surfaces, which show atomically flat terraces over several hundred nm widths and single bilayer steps of (111) diamond.
