The Experts below are selected from a list of 202398 Experts worldwide ranked by ideXlab platform
Alireza Z. Moshfegh - One of the best experts on this subject based on the ideXlab platform.
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A facile approach for reducing the working voltage of Au/TiO2/Au nanostructured memristors by enhancing the local electric field.
Nanotechnology, 2017Co-Authors: Hamidreza Arab Bafrani, Saeed Bagheri Shouraki, M Ebrahimi, Alireza Z. MoshfeghAbstract:Memristor devices have attracted tremendous interest due to different applications ranging from nonvolatile data storage to neuromorphic computing units. Exploring the role of surface roughness of the bottom electrode (BE)/active Layer Interface provides useful guidelines for the optimization of the memristor switching performance. This study focuses on the effect of surface roughness of the BE electrode on the switching characteristics of Au/TiO2/Au three-Layer memristor devices. An optimized wet-etching treatment condition was found to modify the surface roughness of the Au BE where the measurement results indicate that the roughness of the Au BE is affected by both duration time and solution concentrations of the wet-etching process. Then we fabricated arrays of TiO2-based nanostructured memristors sandwiched between two sets of cross-bar Au electrode lines (junction area 900 μm2). The results revealed a reduction in the working voltages in current–voltage characteristic of the device performance when increasing the surface roughness at the Au(BE)/TiO2 active Layer Interface. The set voltage of the device (Vset) significantly decreased from 2.26–1.93 V when we increased the Interface roughness from 4.2–13.1 nm. The present work provides information for better understanding the switching mechanism of titanium-dioxide-based devices, and it can be inferred that enhancing the roughness of the Au BE/TiO2 active Layer Interface leads to a localized non-uniform electric field distribution that plays a vital role in reducing the energy consumption of the device.
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A facile approach for reducing the working voltage of Au/TiO2/Au nanostructured memristors by enhancing the local electric field.
Nanotechnology, 2017Co-Authors: Hamidreza Arab Bafrani, Saeed Bagheri Shouraki, M Ebrahimi, Alireza Z. MoshfeghAbstract:Memristor devices have attracted tremendous interest due to different applications ranging from nonvolatile data storage to neuromorphic computing units. Exploring the role of surface roughness of the bottom electrode (BE)/active Layer Interface provides useful guidelines for the optimization of the memristor switching performance. This study focuses on the effect of surface roughness of the BE electrode on the switching characteristics of Au/TiO2/Au three-Layer memristor devices. An optimized wet-etching treatment condition was found to modify the surface roughness of the Au BE where the measurement results indicate that the roughness of the Au BE is affected by both duration time and solution concentrations of the wet-etching process. Then we fabricated arrays of TiO2-based nanostructured memristors sandwiched between two sets of cross-bar Au electrode lines (junction area 900 μm2). The results revealed a reduction in the working voltages in current–voltage characteristic of the device performance when increasing the surface roughness at the Au(BE)/TiO2 active Layer Interface. The set voltage of the device (Vset) significantly decreased from 2.26–1.93 V when we increased the Interface roughness from 4.2–13.1 nm. The present work provides information for better understanding the switching mechanism of titanium-dioxide-based devices, and it can be inferred that enhancing the roughness of the Au BE/TiO2 active Layer Interface leads to a localized non-uniform electric field distribution that plays a vital role in reducing the energy consumption of the device.
Jen-ching Huang - One of the best experts on this subject based on the ideXlab platform.
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a study on a rigid body boundary Layer Interface force model for stress calculation and stress strain behaviour of nanoscale uniaxial tension
Nanotechnology, 2004Co-Authors: Jen-ching HuangAbstract:A rigid body boundary Layer Interface force (RIF) model for stress calculation on the nanoscale is proposed in this paper for calculating stress based on molecular dynamics. The RIF model is used to study the stress–stain behaviour when nanoscale single crystal copper is under uniaxial tension, and is used for 15 tensile simulations each with different strain rate. The stress–strain curve established from simulation was first converted into a true stress–strain curve; a regression analysis was then applied in order to find the flow curve. From simulation results, it is found that the strain rate has large influence on both K and n values of the flow curve. At low strain rate (less than 1 × 1012 s−1), both K and n values decrease with the increase of strain rate. When the strain rate exceeds 1 × 1012 s−1, the strain rate against the K and n values of the flow curve approaches a constant. Flow curve equations considering the influence of strain rate are derived; both complete and simplified forms of flow curve equations are also derived. It is observed that the lower the strain rates, the higher the fluctuations of the stress–strain curve. Furthermore, the increase of strain rate resulting in a smoother stress–strain curve is also found.
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A study on a rigid body boundary Layer Interface force model for stress calculation and stress–strain behaviour of nanoscale uniaxial tension
Nanotechnology, 2004Co-Authors: Jen-ching HuangAbstract:A rigid body boundary Layer Interface force (RIF) model for stress calculation on the nanoscale is proposed in this paper for calculating stress based on molecular dynamics. The RIF model is used to study the stress–stain behaviour when nanoscale single crystal copper is under uniaxial tension, and is used for 15 tensile simulations each with different strain rate. The stress–strain curve established from simulation was first converted into a true stress–strain curve; a regression analysis was then applied in order to find the flow curve. From simulation results, it is found that the strain rate has large influence on both K and n values of the flow curve. At low strain rate (less than 1 × 1012 s−1), both K and n values decrease with the increase of strain rate. When the strain rate exceeds 1 × 1012 s−1, the strain rate against the K and n values of the flow curve approaches a constant. Flow curve equations considering the influence of strain rate are derived; both complete and simplified forms of flow curve equations are also derived. It is observed that the lower the strain rates, the higher the fluctuations of the stress–strain curve. Furthermore, the increase of strain rate resulting in a smoother stress–strain curve is also found.
Hamidreza Arab Bafrani - One of the best experts on this subject based on the ideXlab platform.
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A facile approach for reducing the working voltage of Au/TiO2/Au nanostructured memristors by enhancing the local electric field.
Nanotechnology, 2017Co-Authors: Hamidreza Arab Bafrani, Saeed Bagheri Shouraki, M Ebrahimi, Alireza Z. MoshfeghAbstract:Memristor devices have attracted tremendous interest due to different applications ranging from nonvolatile data storage to neuromorphic computing units. Exploring the role of surface roughness of the bottom electrode (BE)/active Layer Interface provides useful guidelines for the optimization of the memristor switching performance. This study focuses on the effect of surface roughness of the BE electrode on the switching characteristics of Au/TiO2/Au three-Layer memristor devices. An optimized wet-etching treatment condition was found to modify the surface roughness of the Au BE where the measurement results indicate that the roughness of the Au BE is affected by both duration time and solution concentrations of the wet-etching process. Then we fabricated arrays of TiO2-based nanostructured memristors sandwiched between two sets of cross-bar Au electrode lines (junction area 900 μm2). The results revealed a reduction in the working voltages in current–voltage characteristic of the device performance when increasing the surface roughness at the Au(BE)/TiO2 active Layer Interface. The set voltage of the device (Vset) significantly decreased from 2.26–1.93 V when we increased the Interface roughness from 4.2–13.1 nm. The present work provides information for better understanding the switching mechanism of titanium-dioxide-based devices, and it can be inferred that enhancing the roughness of the Au BE/TiO2 active Layer Interface leads to a localized non-uniform electric field distribution that plays a vital role in reducing the energy consumption of the device.
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A facile approach for reducing the working voltage of Au/TiO2/Au nanostructured memristors by enhancing the local electric field.
Nanotechnology, 2017Co-Authors: Hamidreza Arab Bafrani, Saeed Bagheri Shouraki, M Ebrahimi, Alireza Z. MoshfeghAbstract:Memristor devices have attracted tremendous interest due to different applications ranging from nonvolatile data storage to neuromorphic computing units. Exploring the role of surface roughness of the bottom electrode (BE)/active Layer Interface provides useful guidelines for the optimization of the memristor switching performance. This study focuses on the effect of surface roughness of the BE electrode on the switching characteristics of Au/TiO2/Au three-Layer memristor devices. An optimized wet-etching treatment condition was found to modify the surface roughness of the Au BE where the measurement results indicate that the roughness of the Au BE is affected by both duration time and solution concentrations of the wet-etching process. Then we fabricated arrays of TiO2-based nanostructured memristors sandwiched between two sets of cross-bar Au electrode lines (junction area 900 μm2). The results revealed a reduction in the working voltages in current–voltage characteristic of the device performance when increasing the surface roughness at the Au(BE)/TiO2 active Layer Interface. The set voltage of the device (Vset) significantly decreased from 2.26–1.93 V when we increased the Interface roughness from 4.2–13.1 nm. The present work provides information for better understanding the switching mechanism of titanium-dioxide-based devices, and it can be inferred that enhancing the roughness of the Au BE/TiO2 active Layer Interface leads to a localized non-uniform electric field distribution that plays a vital role in reducing the energy consumption of the device.
M Ebrahimi - One of the best experts on this subject based on the ideXlab platform.
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A facile approach for reducing the working voltage of Au/TiO2/Au nanostructured memristors by enhancing the local electric field.
Nanotechnology, 2017Co-Authors: Hamidreza Arab Bafrani, Saeed Bagheri Shouraki, M Ebrahimi, Alireza Z. MoshfeghAbstract:Memristor devices have attracted tremendous interest due to different applications ranging from nonvolatile data storage to neuromorphic computing units. Exploring the role of surface roughness of the bottom electrode (BE)/active Layer Interface provides useful guidelines for the optimization of the memristor switching performance. This study focuses on the effect of surface roughness of the BE electrode on the switching characteristics of Au/TiO2/Au three-Layer memristor devices. An optimized wet-etching treatment condition was found to modify the surface roughness of the Au BE where the measurement results indicate that the roughness of the Au BE is affected by both duration time and solution concentrations of the wet-etching process. Then we fabricated arrays of TiO2-based nanostructured memristors sandwiched between two sets of cross-bar Au electrode lines (junction area 900 μm2). The results revealed a reduction in the working voltages in current–voltage characteristic of the device performance when increasing the surface roughness at the Au(BE)/TiO2 active Layer Interface. The set voltage of the device (Vset) significantly decreased from 2.26–1.93 V when we increased the Interface roughness from 4.2–13.1 nm. The present work provides information for better understanding the switching mechanism of titanium-dioxide-based devices, and it can be inferred that enhancing the roughness of the Au BE/TiO2 active Layer Interface leads to a localized non-uniform electric field distribution that plays a vital role in reducing the energy consumption of the device.
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A facile approach for reducing the working voltage of Au/TiO2/Au nanostructured memristors by enhancing the local electric field.
Nanotechnology, 2017Co-Authors: Hamidreza Arab Bafrani, Saeed Bagheri Shouraki, M Ebrahimi, Alireza Z. MoshfeghAbstract:Memristor devices have attracted tremendous interest due to different applications ranging from nonvolatile data storage to neuromorphic computing units. Exploring the role of surface roughness of the bottom electrode (BE)/active Layer Interface provides useful guidelines for the optimization of the memristor switching performance. This study focuses on the effect of surface roughness of the BE electrode on the switching characteristics of Au/TiO2/Au three-Layer memristor devices. An optimized wet-etching treatment condition was found to modify the surface roughness of the Au BE where the measurement results indicate that the roughness of the Au BE is affected by both duration time and solution concentrations of the wet-etching process. Then we fabricated arrays of TiO2-based nanostructured memristors sandwiched between two sets of cross-bar Au electrode lines (junction area 900 μm2). The results revealed a reduction in the working voltages in current–voltage characteristic of the device performance when increasing the surface roughness at the Au(BE)/TiO2 active Layer Interface. The set voltage of the device (Vset) significantly decreased from 2.26–1.93 V when we increased the Interface roughness from 4.2–13.1 nm. The present work provides information for better understanding the switching mechanism of titanium-dioxide-based devices, and it can be inferred that enhancing the roughness of the Au BE/TiO2 active Layer Interface leads to a localized non-uniform electric field distribution that plays a vital role in reducing the energy consumption of the device.
Saeed Bagheri Shouraki - One of the best experts on this subject based on the ideXlab platform.
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A facile approach for reducing the working voltage of Au/TiO2/Au nanostructured memristors by enhancing the local electric field.
Nanotechnology, 2017Co-Authors: Hamidreza Arab Bafrani, Saeed Bagheri Shouraki, M Ebrahimi, Alireza Z. MoshfeghAbstract:Memristor devices have attracted tremendous interest due to different applications ranging from nonvolatile data storage to neuromorphic computing units. Exploring the role of surface roughness of the bottom electrode (BE)/active Layer Interface provides useful guidelines for the optimization of the memristor switching performance. This study focuses on the effect of surface roughness of the BE electrode on the switching characteristics of Au/TiO2/Au three-Layer memristor devices. An optimized wet-etching treatment condition was found to modify the surface roughness of the Au BE where the measurement results indicate that the roughness of the Au BE is affected by both duration time and solution concentrations of the wet-etching process. Then we fabricated arrays of TiO2-based nanostructured memristors sandwiched between two sets of cross-bar Au electrode lines (junction area 900 μm2). The results revealed a reduction in the working voltages in current–voltage characteristic of the device performance when increasing the surface roughness at the Au(BE)/TiO2 active Layer Interface. The set voltage of the device (Vset) significantly decreased from 2.26–1.93 V when we increased the Interface roughness from 4.2–13.1 nm. The present work provides information for better understanding the switching mechanism of titanium-dioxide-based devices, and it can be inferred that enhancing the roughness of the Au BE/TiO2 active Layer Interface leads to a localized non-uniform electric field distribution that plays a vital role in reducing the energy consumption of the device.
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A facile approach for reducing the working voltage of Au/TiO2/Au nanostructured memristors by enhancing the local electric field.
Nanotechnology, 2017Co-Authors: Hamidreza Arab Bafrani, Saeed Bagheri Shouraki, M Ebrahimi, Alireza Z. MoshfeghAbstract:Memristor devices have attracted tremendous interest due to different applications ranging from nonvolatile data storage to neuromorphic computing units. Exploring the role of surface roughness of the bottom electrode (BE)/active Layer Interface provides useful guidelines for the optimization of the memristor switching performance. This study focuses on the effect of surface roughness of the BE electrode on the switching characteristics of Au/TiO2/Au three-Layer memristor devices. An optimized wet-etching treatment condition was found to modify the surface roughness of the Au BE where the measurement results indicate that the roughness of the Au BE is affected by both duration time and solution concentrations of the wet-etching process. Then we fabricated arrays of TiO2-based nanostructured memristors sandwiched between two sets of cross-bar Au electrode lines (junction area 900 μm2). The results revealed a reduction in the working voltages in current–voltage characteristic of the device performance when increasing the surface roughness at the Au(BE)/TiO2 active Layer Interface. The set voltage of the device (Vset) significantly decreased from 2.26–1.93 V when we increased the Interface roughness from 4.2–13.1 nm. The present work provides information for better understanding the switching mechanism of titanium-dioxide-based devices, and it can be inferred that enhancing the roughness of the Au BE/TiO2 active Layer Interface leads to a localized non-uniform electric field distribution that plays a vital role in reducing the energy consumption of the device.