The Experts below are selected from a list of 300 Experts worldwide ranked by ideXlab platform
Mark L Brongersma - One of the best experts on this subject based on the ideXlab platform.
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engineering Light Absorption in semiconductor nanowire devices
Nature Materials, 2009Co-Authors: Justin S White, Joonshik Park, Jon A Schuller, B M Clemens, Mark L BrongersmaAbstract:Quantum confinement effects have an important role in photonic devices. However, rather than seeking perfect confinement of Light, leaky-mode resonances are shown to be ideally suited for enhancing and spectrally engineering Light Absorption in nanoscale photonic structures.
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engineering Light Absorption in semiconductor nanowire devices
Nature Materials, 2009Co-Authors: Justin S White, Joonshik Park, Jon A Schuller, B M Clemens, Mark L BrongersmaAbstract:Quantum confinement effects have an important role in photonic devices. However, rather than seeking perfect confinement of Light, leaky-mode resonances are shown to be ideally suited for enhancing and spectrally engineering Light Absorption in nanoscale photonic structures. The use of quantum and photon confinement has enabled a true revolution in the development of high-performance semiconductor materials and devices1,2,3. Harnessing these powerful physical effects relies on an ability to design and fashion structures at length scales comparable to the wavelength of electrons (∼1 nm) or photons (∼1 μm). Unfortunately, many practical optoelectronic devices exhibit intermediate sizes4,5 where resonant enhancement effects seem to be insignificant. Here, we show that leaky-mode resonances, which can gently confine Light within subwavelength, high-refractive-index semiconductor nanostructures, are ideally suited to enhance and spectrally engineer Light Absorption in this important size regime. This is illustrated with a series of individual germanium nanowire photodetectors. This notion, together with the ever-increasing control over nanostructure synthesis opens up tremendous opportunities for the realization of a wide range of high-performance, nanowire-based optoelectronic devices, including solar cells6,7,8, photodetectors9,10,11,12,13, optical modulators14 and Light sources 14,15.
Shaochen Chen - One of the best experts on this subject based on the ideXlab platform.
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broadband Light Absorption enhancement in thin film silicon solar cells
Nano Letters, 2010Co-Authors: Wei Wang, Yalin Lu, Shaomin Wu, Kitt Reinhardt, Shaochen ChenAbstract:Currently, the performances of thin film solar cells are limited by poor Light Absorption and carrier collection. In this research, large, broadband, and polarization-insensitive Light Absorption enhancement was realized via integrating with unique metallic nanogratings. Through simulation, three possible mechanisms were identified to be responsible for such an enormous enhancement. A test for totaling the Absorption over the solar spectrum shows an up to ∼30% broadband Absorption enhancement when comparing to bare thin film cells.
Justin S White - One of the best experts on this subject based on the ideXlab platform.
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engineering Light Absorption in semiconductor nanowire devices
Nature Materials, 2009Co-Authors: Justin S White, Joonshik Park, Jon A Schuller, B M Clemens, Mark L BrongersmaAbstract:Quantum confinement effects have an important role in photonic devices. However, rather than seeking perfect confinement of Light, leaky-mode resonances are shown to be ideally suited for enhancing and spectrally engineering Light Absorption in nanoscale photonic structures.
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engineering Light Absorption in semiconductor nanowire devices
Nature Materials, 2009Co-Authors: Justin S White, Joonshik Park, Jon A Schuller, B M Clemens, Mark L BrongersmaAbstract:Quantum confinement effects have an important role in photonic devices. However, rather than seeking perfect confinement of Light, leaky-mode resonances are shown to be ideally suited for enhancing and spectrally engineering Light Absorption in nanoscale photonic structures. The use of quantum and photon confinement has enabled a true revolution in the development of high-performance semiconductor materials and devices1,2,3. Harnessing these powerful physical effects relies on an ability to design and fashion structures at length scales comparable to the wavelength of electrons (∼1 nm) or photons (∼1 μm). Unfortunately, many practical optoelectronic devices exhibit intermediate sizes4,5 where resonant enhancement effects seem to be insignificant. Here, we show that leaky-mode resonances, which can gently confine Light within subwavelength, high-refractive-index semiconductor nanostructures, are ideally suited to enhance and spectrally engineer Light Absorption in this important size regime. This is illustrated with a series of individual germanium nanowire photodetectors. This notion, together with the ever-increasing control over nanostructure synthesis opens up tremendous opportunities for the realization of a wide range of high-performance, nanowire-based optoelectronic devices, including solar cells6,7,8, photodetectors9,10,11,12,13, optical modulators14 and Light sources 14,15.
Wei Wang - One of the best experts on this subject based on the ideXlab platform.
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broadband Light Absorption enhancement in thin film silicon solar cells
Nano Letters, 2010Co-Authors: Wei Wang, Yalin Lu, Shaomin Wu, Kitt Reinhardt, Shaochen ChenAbstract:Currently, the performances of thin film solar cells are limited by poor Light Absorption and carrier collection. In this research, large, broadband, and polarization-insensitive Light Absorption enhancement was realized via integrating with unique metallic nanogratings. Through simulation, three possible mechanisms were identified to be responsible for such an enormous enhancement. A test for totaling the Absorption over the solar spectrum shows an up to ∼30% broadband Absorption enhancement when comparing to bare thin film cells.
B M Clemens - One of the best experts on this subject based on the ideXlab platform.
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engineering Light Absorption in semiconductor nanowire devices
Nature Materials, 2009Co-Authors: Justin S White, Joonshik Park, Jon A Schuller, B M Clemens, Mark L BrongersmaAbstract:Quantum confinement effects have an important role in photonic devices. However, rather than seeking perfect confinement of Light, leaky-mode resonances are shown to be ideally suited for enhancing and spectrally engineering Light Absorption in nanoscale photonic structures.
-
engineering Light Absorption in semiconductor nanowire devices
Nature Materials, 2009Co-Authors: Justin S White, Joonshik Park, Jon A Schuller, B M Clemens, Mark L BrongersmaAbstract:Quantum confinement effects have an important role in photonic devices. However, rather than seeking perfect confinement of Light, leaky-mode resonances are shown to be ideally suited for enhancing and spectrally engineering Light Absorption in nanoscale photonic structures. The use of quantum and photon confinement has enabled a true revolution in the development of high-performance semiconductor materials and devices1,2,3. Harnessing these powerful physical effects relies on an ability to design and fashion structures at length scales comparable to the wavelength of electrons (∼1 nm) or photons (∼1 μm). Unfortunately, many practical optoelectronic devices exhibit intermediate sizes4,5 where resonant enhancement effects seem to be insignificant. Here, we show that leaky-mode resonances, which can gently confine Light within subwavelength, high-refractive-index semiconductor nanostructures, are ideally suited to enhance and spectrally engineer Light Absorption in this important size regime. This is illustrated with a series of individual germanium nanowire photodetectors. This notion, together with the ever-increasing control over nanostructure synthesis opens up tremendous opportunities for the realization of a wide range of high-performance, nanowire-based optoelectronic devices, including solar cells6,7,8, photodetectors9,10,11,12,13, optical modulators14 and Light sources 14,15.
