The Experts below are selected from a list of 819 Experts worldwide ranked by ideXlab platform

E. Geerlings - One of the best experts on this subject based on the ideXlab platform.

  • Widely Tunable Micro-Mechanical External-Cavity Diode Laser Emitting Around 2.1 $\mu$ m
    IEEE Journal of Quantum Electronics, 2008
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, D. Kallweit, J. Wagner, B. Blasi, H. Zappe
    Abstract:

    A widely tunable (Deltalambda/lambda = 7%) micro-mechanical external cavity GaSb-based diode laser (muECL) emitting around 2.1 mum is presented. A micro-machined grating with a rectangular grating profile, which can be tilted electrostatically, is employed as wavelength selective element within the external cavity using a Littrow Configuration. An optimized grating profile leads to a high diffraction efficiency in the -1st diffraction order and therefore to a broad tuning range of 152 nm. The maximum output power of the fiber coupled muECL system varied only moderately between 22 and 10 mW across the tuning range.

  • Micro-mechanical external-cavity laser with wide tuning range
    2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS), 2007
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, J. Wagner, D. Kallweit, H. Zappe
    Abstract:

    We report on GaSb-based quantum-well diode lasers in a micro-machined external cavity setup using the Littrow Configuration. An electrostatically-actuated silicon- grating, optimized to achieve a wide tuning range in the 2.3 mum wavelength range, is used as tuning element. A tuning range of 82 nm could be realized. The maximum output power of the micro external cavity laser (muECL) was above 15 mW over the entire tuning range.

  • Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3 $mu$ m
    IEEE Photonics Technology Letters, 2006
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, H. Zappe, J. Wagner
    Abstract:

    We report on a widely tunable external cavity GaSb-based diode laser (ECL) in Littrow-Configuration. The low (44deg full-width at half-maximum) fast axis beam divergence of the quantum-well diode laser employed allowed an efficient coupling to the external cavity, which resulted in a wide tuning range of 177 nm around the central emission wavelength of 2.30 mum. The maximum output power of the fiber coupled ECL system varied only moderately between 16.5 mW at 2.23 mum and 9 mW at the long-wavelength limit at 2.39 mum

  • GaSb-based Micro-Mechanical External-Cavity Laser Emitting around 2.3μm
    IEEE LEOS International Conference on Optical MEMS and Their Applications Conference 2006., 2006
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, J. Wagner, D. Kallweit, H. Zappe
    Abstract:

    We report on GaSb-based quantum-well diode lasers in a micro-machined external cavity setup using the Littrow-Configuration. An electrostatically actuated Si-grating, optimized to achieve a wide tuning range in the 2.3mum wavelength range, is used as a tuning element

  • Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3$mu$m
    IEEE Photonics Technology Letters, 2006
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, H. Zappe, J. Wagner
    Abstract:

    We report on a widely tunable external cavity GaSb-based diode laser (ECL) in Littrow-Configuration. The low (44deg full-width at half-maximum) fast axis beam divergence of the quantum-well diode laser employed allowed an efficient coupling to the external cavity, which resulted in a wide tuning range of 177 nm around the central emission wavelength of 2.30 mum. The maximum output power of the fiber coupled ECL system varied only moderately between 16.5 mW at 2.23 mum and 9 mW at the long-wavelength limit at 2.39 mum

J. Wagner - One of the best experts on this subject based on the ideXlab platform.

  • Micro-mechanical external-cavity laser with wide tuning range
    2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS), 2007
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, J. Wagner, D. Kallweit, H. Zappe
    Abstract:

    We report on GaSb-based quantum-well diode lasers in a micro-machined external cavity setup using the Littrow Configuration. An electrostatically-actuated silicon- grating, optimized to achieve a wide tuning range in the 2.3 mum wavelength range, is used as tuning element. A tuning range of 82 nm could be realized. The maximum output power of the micro external cavity laser (muECL) was above 15 mW over the entire tuning range.

  • Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3 $mu$ m
    IEEE Photonics Technology Letters, 2006
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, H. Zappe, J. Wagner
    Abstract:

    We report on a widely tunable external cavity GaSb-based diode laser (ECL) in Littrow-Configuration. The low (44deg full-width at half-maximum) fast axis beam divergence of the quantum-well diode laser employed allowed an efficient coupling to the external cavity, which resulted in a wide tuning range of 177 nm around the central emission wavelength of 2.30 mum. The maximum output power of the fiber coupled ECL system varied only moderately between 16.5 mW at 2.23 mum and 9 mW at the long-wavelength limit at 2.39 mum

  • GaSb-based Micro-Mechanical External-Cavity Laser Emitting around 2.3μm
    IEEE LEOS International Conference on Optical MEMS and Their Applications Conference 2006., 2006
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, J. Wagner, D. Kallweit, H. Zappe
    Abstract:

    We report on GaSb-based quantum-well diode lasers in a micro-machined external cavity setup using the Littrow-Configuration. An electrostatically actuated Si-grating, optimized to achieve a wide tuning range in the 2.3mum wavelength range, is used as a tuning element

  • Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3$mu$m
    IEEE Photonics Technology Letters, 2006
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, H. Zappe, J. Wagner
    Abstract:

    We report on a widely tunable external cavity GaSb-based diode laser (ECL) in Littrow-Configuration. The low (44deg full-width at half-maximum) fast axis beam divergence of the quantum-well diode laser employed allowed an efficient coupling to the external cavity, which resulted in a wide tuning range of 177 nm around the central emission wavelength of 2.30 mum. The maximum output power of the fiber coupled ECL system varied only moderately between 16.5 mW at 2.23 mum and 9 mW at the long-wavelength limit at 2.39 mum

H. Zappe - One of the best experts on this subject based on the ideXlab platform.

  • Widely Tunable Micro-Mechanical External-Cavity Diode Laser Emitting Around 2.1 $\mu$ m
    IEEE Journal of Quantum Electronics, 2008
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, D. Kallweit, J. Wagner, B. Blasi, H. Zappe
    Abstract:

    A widely tunable (Deltalambda/lambda = 7%) micro-mechanical external cavity GaSb-based diode laser (muECL) emitting around 2.1 mum is presented. A micro-machined grating with a rectangular grating profile, which can be tilted electrostatically, is employed as wavelength selective element within the external cavity using a Littrow Configuration. An optimized grating profile leads to a high diffraction efficiency in the -1st diffraction order and therefore to a broad tuning range of 152 nm. The maximum output power of the fiber coupled muECL system varied only moderately between 22 and 10 mW across the tuning range.

  • Micro-mechanical external-cavity laser with wide tuning range
    2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS), 2007
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, J. Wagner, D. Kallweit, H. Zappe
    Abstract:

    We report on GaSb-based quantum-well diode lasers in a micro-machined external cavity setup using the Littrow Configuration. An electrostatically-actuated silicon- grating, optimized to achieve a wide tuning range in the 2.3 mum wavelength range, is used as tuning element. A tuning range of 82 nm could be realized. The maximum output power of the micro external cavity laser (muECL) was above 15 mW over the entire tuning range.

  • Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3 $mu$ m
    IEEE Photonics Technology Letters, 2006
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, H. Zappe, J. Wagner
    Abstract:

    We report on a widely tunable external cavity GaSb-based diode laser (ECL) in Littrow-Configuration. The low (44deg full-width at half-maximum) fast axis beam divergence of the quantum-well diode laser employed allowed an efficient coupling to the external cavity, which resulted in a wide tuning range of 177 nm around the central emission wavelength of 2.30 mum. The maximum output power of the fiber coupled ECL system varied only moderately between 16.5 mW at 2.23 mum and 9 mW at the long-wavelength limit at 2.39 mum

  • GaSb-based Micro-Mechanical External-Cavity Laser Emitting around 2.3μm
    IEEE LEOS International Conference on Optical MEMS and Their Applications Conference 2006., 2006
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, J. Wagner, D. Kallweit, H. Zappe
    Abstract:

    We report on GaSb-based quantum-well diode lasers in a micro-machined external cavity setup using the Littrow-Configuration. An electrostatically actuated Si-grating, optimized to achieve a wide tuning range in the 2.3mum wavelength range, is used as a tuning element

  • Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3$mu$m
    IEEE Photonics Technology Letters, 2006
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, H. Zappe, J. Wagner
    Abstract:

    We report on a widely tunable external cavity GaSb-based diode laser (ECL) in Littrow-Configuration. The low (44deg full-width at half-maximum) fast axis beam divergence of the quantum-well diode laser employed allowed an efficient coupling to the external cavity, which resulted in a wide tuning range of 177 nm around the central emission wavelength of 2.30 mum. The maximum output power of the fiber coupled ECL system varied only moderately between 16.5 mW at 2.23 mum and 9 mW at the long-wavelength limit at 2.39 mum

J. Schmitz - One of the best experts on this subject based on the ideXlab platform.

  • Widely Tunable Micro-Mechanical External-Cavity Diode Laser Emitting Around 2.1 $\mu$ m
    IEEE Journal of Quantum Electronics, 2008
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, D. Kallweit, J. Wagner, B. Blasi, H. Zappe
    Abstract:

    A widely tunable (Deltalambda/lambda = 7%) micro-mechanical external cavity GaSb-based diode laser (muECL) emitting around 2.1 mum is presented. A micro-machined grating with a rectangular grating profile, which can be tilted electrostatically, is employed as wavelength selective element within the external cavity using a Littrow Configuration. An optimized grating profile leads to a high diffraction efficiency in the -1st diffraction order and therefore to a broad tuning range of 152 nm. The maximum output power of the fiber coupled muECL system varied only moderately between 22 and 10 mW across the tuning range.

  • Micro-mechanical external-cavity laser with wide tuning range
    2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS), 2007
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, J. Wagner, D. Kallweit, H. Zappe
    Abstract:

    We report on GaSb-based quantum-well diode lasers in a micro-machined external cavity setup using the Littrow Configuration. An electrostatically-actuated silicon- grating, optimized to achieve a wide tuning range in the 2.3 mum wavelength range, is used as tuning element. A tuning range of 82 nm could be realized. The maximum output power of the micro external cavity laser (muECL) was above 15 mW over the entire tuning range.

  • Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3 $mu$ m
    IEEE Photonics Technology Letters, 2006
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, H. Zappe, J. Wagner
    Abstract:

    We report on a widely tunable external cavity GaSb-based diode laser (ECL) in Littrow-Configuration. The low (44deg full-width at half-maximum) fast axis beam divergence of the quantum-well diode laser employed allowed an efficient coupling to the external cavity, which resulted in a wide tuning range of 177 nm around the central emission wavelength of 2.30 mum. The maximum output power of the fiber coupled ECL system varied only moderately between 16.5 mW at 2.23 mum and 9 mW at the long-wavelength limit at 2.39 mum

  • GaSb-based Micro-Mechanical External-Cavity Laser Emitting around 2.3μm
    IEEE LEOS International Conference on Optical MEMS and Their Applications Conference 2006., 2006
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, J. Wagner, D. Kallweit, H. Zappe
    Abstract:

    We report on GaSb-based quantum-well diode lasers in a micro-machined external cavity setup using the Littrow-Configuration. An electrostatically actuated Si-grating, optimized to achieve a wide tuning range in the 2.3mum wavelength range, is used as a tuning element

  • Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3$mu$m
    IEEE Photonics Technology Letters, 2006
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, H. Zappe, J. Wagner
    Abstract:

    We report on a widely tunable external cavity GaSb-based diode laser (ECL) in Littrow-Configuration. The low (44deg full-width at half-maximum) fast axis beam divergence of the quantum-well diode laser employed allowed an efficient coupling to the external cavity, which resulted in a wide tuning range of 177 nm around the central emission wavelength of 2.30 mum. The maximum output power of the fiber coupled ECL system varied only moderately between 16.5 mW at 2.23 mum and 9 mW at the long-wavelength limit at 2.39 mum

M. Rattunde - One of the best experts on this subject based on the ideXlab platform.

  • Widely Tunable Micro-Mechanical External-Cavity Diode Laser Emitting Around 2.1 $\mu$ m
    IEEE Journal of Quantum Electronics, 2008
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, D. Kallweit, J. Wagner, B. Blasi, H. Zappe
    Abstract:

    A widely tunable (Deltalambda/lambda = 7%) micro-mechanical external cavity GaSb-based diode laser (muECL) emitting around 2.1 mum is presented. A micro-machined grating with a rectangular grating profile, which can be tilted electrostatically, is employed as wavelength selective element within the external cavity using a Littrow Configuration. An optimized grating profile leads to a high diffraction efficiency in the -1st diffraction order and therefore to a broad tuning range of 152 nm. The maximum output power of the fiber coupled muECL system varied only moderately between 22 and 10 mW across the tuning range.

  • Micro-mechanical external-cavity laser with wide tuning range
    2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS), 2007
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, J. Wagner, D. Kallweit, H. Zappe
    Abstract:

    We report on GaSb-based quantum-well diode lasers in a micro-machined external cavity setup using the Littrow Configuration. An electrostatically-actuated silicon- grating, optimized to achieve a wide tuning range in the 2.3 mum wavelength range, is used as tuning element. A tuning range of 82 nm could be realized. The maximum output power of the micro external cavity laser (muECL) was above 15 mW over the entire tuning range.

  • Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3 $mu$ m
    IEEE Photonics Technology Letters, 2006
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, H. Zappe, J. Wagner
    Abstract:

    We report on a widely tunable external cavity GaSb-based diode laser (ECL) in Littrow-Configuration. The low (44deg full-width at half-maximum) fast axis beam divergence of the quantum-well diode laser employed allowed an efficient coupling to the external cavity, which resulted in a wide tuning range of 177 nm around the central emission wavelength of 2.30 mum. The maximum output power of the fiber coupled ECL system varied only moderately between 16.5 mW at 2.23 mum and 9 mW at the long-wavelength limit at 2.39 mum

  • GaSb-based Micro-Mechanical External-Cavity Laser Emitting around 2.3μm
    IEEE LEOS International Conference on Optical MEMS and Their Applications Conference 2006., 2006
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, J. Wagner, D. Kallweit, H. Zappe
    Abstract:

    We report on GaSb-based quantum-well diode lasers in a micro-machined external cavity setup using the Littrow-Configuration. An electrostatically actuated Si-grating, optimized to achieve a wide tuning range in the 2.3mum wavelength range, is used as a tuning element

  • Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3$mu$m
    IEEE Photonics Technology Letters, 2006
    Co-Authors: E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, H. Zappe, J. Wagner
    Abstract:

    We report on a widely tunable external cavity GaSb-based diode laser (ECL) in Littrow-Configuration. The low (44deg full-width at half-maximum) fast axis beam divergence of the quantum-well diode laser employed allowed an efficient coupling to the external cavity, which resulted in a wide tuning range of 177 nm around the central emission wavelength of 2.30 mum. The maximum output power of the fiber coupled ECL system varied only moderately between 16.5 mW at 2.23 mum and 9 mW at the long-wavelength limit at 2.39 mum