The Experts below are selected from a list of 78960 Experts worldwide ranked by ideXlab platform
Ming Jiang - One of the best experts on this subject based on the ideXlab platform.
-
A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy IrRadiation
Nanoscale Research Letters, 2018Co-Authors: Ming Jiang, Zijiang Liu, Shuming Peng, Guixia Yang, Haiyan Xiao, Liang Qiao, Xiaotao ZuAbstract:In this study, the Low-Energy Radiation responses of Si, Ge, and Si/Ge superlattice are investigated by an ab initio molecular dynamics method and the origins of their different Radiation behaviors are explored. It is found that the Radiation resistance of the Ge atoms that are around the interface of Si/Ge superlattice is comparable to bulk Ge, whereas the Si atoms around the interface are more difficult to be displaced than the bulk Si, showing enhanced Radiation tolerance as compared with the bulk Si. The mechanisms for defect generation in the bulk and superlattice structures show somewhat different character, and the associated defects in the superlattice are more complex. Defect formation and migration calculations show that in the superlattice structure, the point defects are more difficult to form and the vacancies are less mobile. The enhanced Radiation tolerance of the Si/Ge superlattice will benefit for its applications as electronic and optoelectronic devices under Radiation environment.
-
a comparative study of Low Energy Radiation response of alas gaas and gaas alas superlattice and the damage effects on their electronic structures
Scientific Reports, 2018Co-Authors: Ming Jiang, H Y Xiao, Shuming Peng, Guixia Yang, Zijiang LiuAbstract:In this study, the Low Energy Radiation responses of AlAs, GaAs and GaAs/AlAs superlattice are simulated and the Radiation damage effects on their electronic structures are investigated. It is found that the threshold displacement energies for AlAs are generally larger than those for GaAs, i.e., the atoms in AlAs are more difficult to be displaced than those in GaAs under Radiation environment. As for GaAs/AlAs superlattice, the Ga and Al atoms are more susceptible to the Radiation than those in the bulk AlAs and GaAs, whereas the As atoms need comparable or much larger energies to be displaced than those in the bulk states. The created defects are generally Frenkel pairs, and a few antisite defects are also created in the superlattice structure. The created defects are found to have profound effects on the electronic properties of GaAs/AlAs superlattice, in which charge transfer, redistribution and even accumulation take place, and band gap narrowing and even metallicity are induced in some cases. This study shows that it is necessary to enhance the Radiation tolerance of GaAs/AlAs superlattice to improve their performance under irRadiation.
-
Ab initio molecular dynamics simulation of Low Energy Radiation responses of α-Al 2 O 3
Scientific Reports, 2017Co-Authors: Yonggang Yuan, H Y Xiao, Ming Jiang, F. A. Zhao, H. Chen, H. Gao, Xia XiangAbstract:In this study, an ab initio molecular dynamics method is employed to investigate the response behavior of α-Al2O3 to Low Energy irRadiation. Different from the previous experiments, our calculations reveal that the displacements of oxygen dominate under electron irRadiation and the created defects are mainly oxygen vacancy and interstitial. The experimental observation of the absorption peaks appearing at 203, 233 and 256 nm for α-Al2O3 under electron irRadiations should be contributed by the oxygen defects and these defects will reduce the transmittance of α-Al2O3, which agrees well with the very recent experiment. This study demonstrates the necessity to reinvestigate the threshold displacement energies of α-Al2O3, and to introduce recombination center for oxygen defects to improve its optical properties and performance under Radiation environment.
-
A comparative study of Low Energy Radiation responses of SiC, TiC and ZrC
Acta Materialia, 2016Co-Authors: Ming Jiang, H Y Xiao, Shuming Peng, Haibin Zhang, Zijiang LiuAbstract:In this study, an ab initio molecular dynamics method is employed to compare the responses of SiC, TiC and ZrC to Low Energy irRadiation. It reveals that C displacements are dominant in the cascade events of the three carbides. The associated defects in SiC are mainly Frenkel pairs and antisite defects, whereas damage end states in TiC and ZrC generally consist of Frenkel pairs and very few antisite defects are created. It is proposed that the susceptibility to antisite formation in SiC contributes to its crystalline-to-amorphous transformation under irRadiation that is observed experimentally. The stronger Radiation tolerance of TiC and ZrC than SiC can be originated from their different electronic structures, i.e., the and bonds are a mixture of covalent, metallic, and ionic character, whereas the bond is mainly covalent. The presented results provide underlying mechanisms for defect generation in SiC, TiC and ZrC, and advance the fundamental understanding of the Radiation resistances of carbide materials.
Xiaotao Zu - One of the best experts on this subject based on the ideXlab platform.
-
A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy IrRadiation
Nanoscale Research Letters, 2018Co-Authors: Ming Jiang, Zijiang Liu, Shuming Peng, Guixia Yang, Haiyan Xiao, Liang Qiao, Xiaotao ZuAbstract:In this study, the Low-Energy Radiation responses of Si, Ge, and Si/Ge superlattice are investigated by an ab initio molecular dynamics method and the origins of their different Radiation behaviors are explored. It is found that the Radiation resistance of the Ge atoms that are around the interface of Si/Ge superlattice is comparable to bulk Ge, whereas the Si atoms around the interface are more difficult to be displaced than the bulk Si, showing enhanced Radiation tolerance as compared with the bulk Si. The mechanisms for defect generation in the bulk and superlattice structures show somewhat different character, and the associated defects in the superlattice are more complex. Defect formation and migration calculations show that in the superlattice structure, the point defects are more difficult to form and the vacancies are less mobile. The enhanced Radiation tolerance of the Si/Ge superlattice will benefit for its applications as electronic and optoelectronic devices under Radiation environment.
Zijiang Liu - One of the best experts on this subject based on the ideXlab platform.
-
A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy IrRadiation
Nanoscale Research Letters, 2018Co-Authors: Ming Jiang, Zijiang Liu, Shuming Peng, Guixia Yang, Haiyan Xiao, Liang Qiao, Xiaotao ZuAbstract:In this study, the Low-Energy Radiation responses of Si, Ge, and Si/Ge superlattice are investigated by an ab initio molecular dynamics method and the origins of their different Radiation behaviors are explored. It is found that the Radiation resistance of the Ge atoms that are around the interface of Si/Ge superlattice is comparable to bulk Ge, whereas the Si atoms around the interface are more difficult to be displaced than the bulk Si, showing enhanced Radiation tolerance as compared with the bulk Si. The mechanisms for defect generation in the bulk and superlattice structures show somewhat different character, and the associated defects in the superlattice are more complex. Defect formation and migration calculations show that in the superlattice structure, the point defects are more difficult to form and the vacancies are less mobile. The enhanced Radiation tolerance of the Si/Ge superlattice will benefit for its applications as electronic and optoelectronic devices under Radiation environment.
-
a comparative study of Low Energy Radiation response of alas gaas and gaas alas superlattice and the damage effects on their electronic structures
Scientific Reports, 2018Co-Authors: Ming Jiang, H Y Xiao, Shuming Peng, Guixia Yang, Zijiang LiuAbstract:In this study, the Low Energy Radiation responses of AlAs, GaAs and GaAs/AlAs superlattice are simulated and the Radiation damage effects on their electronic structures are investigated. It is found that the threshold displacement energies for AlAs are generally larger than those for GaAs, i.e., the atoms in AlAs are more difficult to be displaced than those in GaAs under Radiation environment. As for GaAs/AlAs superlattice, the Ga and Al atoms are more susceptible to the Radiation than those in the bulk AlAs and GaAs, whereas the As atoms need comparable or much larger energies to be displaced than those in the bulk states. The created defects are generally Frenkel pairs, and a few antisite defects are also created in the superlattice structure. The created defects are found to have profound effects on the electronic properties of GaAs/AlAs superlattice, in which charge transfer, redistribution and even accumulation take place, and band gap narrowing and even metallicity are induced in some cases. This study shows that it is necessary to enhance the Radiation tolerance of GaAs/AlAs superlattice to improve their performance under irRadiation.
-
A comparative study of Low Energy Radiation responses of SiC, TiC and ZrC
Acta Materialia, 2016Co-Authors: Ming Jiang, H Y Xiao, Shuming Peng, Haibin Zhang, Zijiang LiuAbstract:In this study, an ab initio molecular dynamics method is employed to compare the responses of SiC, TiC and ZrC to Low Energy irRadiation. It reveals that C displacements are dominant in the cascade events of the three carbides. The associated defects in SiC are mainly Frenkel pairs and antisite defects, whereas damage end states in TiC and ZrC generally consist of Frenkel pairs and very few antisite defects are created. It is proposed that the susceptibility to antisite formation in SiC contributes to its crystalline-to-amorphous transformation under irRadiation that is observed experimentally. The stronger Radiation tolerance of TiC and ZrC than SiC can be originated from their different electronic structures, i.e., the and bonds are a mixture of covalent, metallic, and ionic character, whereas the bond is mainly covalent. The presented results provide underlying mechanisms for defect generation in SiC, TiC and ZrC, and advance the fundamental understanding of the Radiation resistances of carbide materials.
Guixia Yang - One of the best experts on this subject based on the ideXlab platform.
-
A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy IrRadiation
Nanoscale Research Letters, 2018Co-Authors: Ming Jiang, Zijiang Liu, Shuming Peng, Guixia Yang, Haiyan Xiao, Liang Qiao, Xiaotao ZuAbstract:In this study, the Low-Energy Radiation responses of Si, Ge, and Si/Ge superlattice are investigated by an ab initio molecular dynamics method and the origins of their different Radiation behaviors are explored. It is found that the Radiation resistance of the Ge atoms that are around the interface of Si/Ge superlattice is comparable to bulk Ge, whereas the Si atoms around the interface are more difficult to be displaced than the bulk Si, showing enhanced Radiation tolerance as compared with the bulk Si. The mechanisms for defect generation in the bulk and superlattice structures show somewhat different character, and the associated defects in the superlattice are more complex. Defect formation and migration calculations show that in the superlattice structure, the point defects are more difficult to form and the vacancies are less mobile. The enhanced Radiation tolerance of the Si/Ge superlattice will benefit for its applications as electronic and optoelectronic devices under Radiation environment.
-
a comparative study of Low Energy Radiation response of alas gaas and gaas alas superlattice and the damage effects on their electronic structures
Scientific Reports, 2018Co-Authors: Ming Jiang, H Y Xiao, Shuming Peng, Guixia Yang, Zijiang LiuAbstract:In this study, the Low Energy Radiation responses of AlAs, GaAs and GaAs/AlAs superlattice are simulated and the Radiation damage effects on their electronic structures are investigated. It is found that the threshold displacement energies for AlAs are generally larger than those for GaAs, i.e., the atoms in AlAs are more difficult to be displaced than those in GaAs under Radiation environment. As for GaAs/AlAs superlattice, the Ga and Al atoms are more susceptible to the Radiation than those in the bulk AlAs and GaAs, whereas the As atoms need comparable or much larger energies to be displaced than those in the bulk states. The created defects are generally Frenkel pairs, and a few antisite defects are also created in the superlattice structure. The created defects are found to have profound effects on the electronic properties of GaAs/AlAs superlattice, in which charge transfer, redistribution and even accumulation take place, and band gap narrowing and even metallicity are induced in some cases. This study shows that it is necessary to enhance the Radiation tolerance of GaAs/AlAs superlattice to improve their performance under irRadiation.
Shuming Peng - One of the best experts on this subject based on the ideXlab platform.
-
A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy IrRadiation
Nanoscale Research Letters, 2018Co-Authors: Ming Jiang, Zijiang Liu, Shuming Peng, Guixia Yang, Haiyan Xiao, Liang Qiao, Xiaotao ZuAbstract:In this study, the Low-Energy Radiation responses of Si, Ge, and Si/Ge superlattice are investigated by an ab initio molecular dynamics method and the origins of their different Radiation behaviors are explored. It is found that the Radiation resistance of the Ge atoms that are around the interface of Si/Ge superlattice is comparable to bulk Ge, whereas the Si atoms around the interface are more difficult to be displaced than the bulk Si, showing enhanced Radiation tolerance as compared with the bulk Si. The mechanisms for defect generation in the bulk and superlattice structures show somewhat different character, and the associated defects in the superlattice are more complex. Defect formation and migration calculations show that in the superlattice structure, the point defects are more difficult to form and the vacancies are less mobile. The enhanced Radiation tolerance of the Si/Ge superlattice will benefit for its applications as electronic and optoelectronic devices under Radiation environment.
-
a comparative study of Low Energy Radiation response of alas gaas and gaas alas superlattice and the damage effects on their electronic structures
Scientific Reports, 2018Co-Authors: Ming Jiang, H Y Xiao, Shuming Peng, Guixia Yang, Zijiang LiuAbstract:In this study, the Low Energy Radiation responses of AlAs, GaAs and GaAs/AlAs superlattice are simulated and the Radiation damage effects on their electronic structures are investigated. It is found that the threshold displacement energies for AlAs are generally larger than those for GaAs, i.e., the atoms in AlAs are more difficult to be displaced than those in GaAs under Radiation environment. As for GaAs/AlAs superlattice, the Ga and Al atoms are more susceptible to the Radiation than those in the bulk AlAs and GaAs, whereas the As atoms need comparable or much larger energies to be displaced than those in the bulk states. The created defects are generally Frenkel pairs, and a few antisite defects are also created in the superlattice structure. The created defects are found to have profound effects on the electronic properties of GaAs/AlAs superlattice, in which charge transfer, redistribution and even accumulation take place, and band gap narrowing and even metallicity are induced in some cases. This study shows that it is necessary to enhance the Radiation tolerance of GaAs/AlAs superlattice to improve their performance under irRadiation.
-
A comparative study of Low Energy Radiation responses of SiC, TiC and ZrC
Acta Materialia, 2016Co-Authors: Ming Jiang, H Y Xiao, Shuming Peng, Haibin Zhang, Zijiang LiuAbstract:In this study, an ab initio molecular dynamics method is employed to compare the responses of SiC, TiC and ZrC to Low Energy irRadiation. It reveals that C displacements are dominant in the cascade events of the three carbides. The associated defects in SiC are mainly Frenkel pairs and antisite defects, whereas damage end states in TiC and ZrC generally consist of Frenkel pairs and very few antisite defects are created. It is proposed that the susceptibility to antisite formation in SiC contributes to its crystalline-to-amorphous transformation under irRadiation that is observed experimentally. The stronger Radiation tolerance of TiC and ZrC than SiC can be originated from their different electronic structures, i.e., the and bonds are a mixture of covalent, metallic, and ionic character, whereas the bond is mainly covalent. The presented results provide underlying mechanisms for defect generation in SiC, TiC and ZrC, and advance the fundamental understanding of the Radiation resistances of carbide materials.
