The Experts below are selected from a list of 315 Experts worldwide ranked by ideXlab platform
Fang Yuh Lo - One of the best experts on this subject based on the ideXlab platform.
-
Voltage induced reversible and irreversible change of Magnetic Coercivity in Co/ZnO heterostructure
Journal of Applied Physics, 2016Co-Authors: Po Chun Chang, Venkata Ramana Mudinepalli, Tsung Chun Hsieh, Fang Yuh LoAbstract:In this study, the application of bias voltage to 4–8 nm Co/275 nm ZnO heterostructures changed the Magnetic behavior reversibly or irreversibly, depending on the different voltage-induced mechanisms. The Magnetic Coercivity (Hc) monotonically decreased 20% when the small voltages of 0–8 V were applied. The Hc reduction was symmetric with the voltage polarity, and the reversibility was demonstrated by cyclically switching the bias voltage between 0 and 7 V. While a large voltage up to 40 V was applied to the Co/ZnO junction, the current heating effect became considerable and the Co-oxide was formed, as confirmed by depth-profiling X-ray photoemission spectroscopy analysis. The presence of Co-oxide in the Co films induced the irreversible reduction of the Kerr signal and Hc at room temperature. The considerable Hc enhancement at 130 K also indicates the exchange bias coupling effect from the antiferroMagnetic Co-oxide.
-
Modulation of Magnetic Coercivity in Ni thin films by reversible control of strain
Journal of Magnetism and Magnetic Materials, 2015Co-Authors: Chia Wei Huang, Yi Chieh Ting, Fang Yuh Lo, Ming-yau ChernAbstract:Abstract In this study, we demonstrated the magnetoelectric control of Magnetic thin films. (111)-textured Pd/Ni/Pd thin films were prepared on mica/lead zirconium titanate (PZT) substrates for the investigation. The reversible modulation of Magnetic Coercivity in Ni films was observed through the electric-voltage-controlled strain variation from the PZT substrate. For 14 nm Ni film, the applied electric field of ±350 V/m led to ±0.5% strain variation of PZT, which was transferred to ±0.4% strain variation of Pd/Ni/Pd thin films on mica, and resulted in ∓17 Oe (∓5% of the preliminary Magnetic Coercivity). The reversible modulation of Magnetic Coercivity is supposed to be caused by the voltage-controlled strain through the magneto-elastic effect.
-
voltage induced reversible changes in the Magnetic Coercivity of fe zno heterostructures
Applied Physics Letters, 2014Co-Authors: Po Chun Chang, Cheng Jui Tsai, Tsung Chun Shieh, Fang Yuh LoAbstract:In this study, the Magnetic Coercivity (Hc) of Fe/ZnO heterostructure monotonically decreased as voltage was applied. The reversibility of this effect was demonstrated by cyclically changing the bias voltage from 0 to 6–9 V; the Hc decreased 15%–20%. The Hc value exhibited the same variation whether the applied voltage was positive or negative. As thick Fe-oxide gradually formed at the interface by using direct current heating, the Hc increased and the Fe/ZnO heterostructure demonstrated a similar voltage-induced reduction of Hc.
Cheng Jui Tsai - One of the best experts on this subject based on the ideXlab platform.
-
critical hydrogenation effect on Magnetic Coercivity of perpendicularly magnetized co pd multilayer nanostructures
Journal of Applied Physics, 2014Co-Authors: Cheng Jui Tsai, A O AdeyeyeAbstract:Low dimensional materials of perpendicularly magnetized [Co(0.5 nm)/Pd(3 nm)] multilayer, including continuous thin film, nanodots and nanodot-chains were prepared for the investigation of reversible hydrogenation effect on the Magnetic and optical properties. For the continuous film, after hydrogenation the Magnetic Coercivity (Hc) was enhanced by 47% and the Kerr intensity was significantly reduced to 10% of the pristine value. In nanodots, hydrogenation led to 25% reduction of Hc and Kerr intensity as well. For nanodot-chains, the shape of Magnetic hysteresis loop was modulated by hydrogenation. The hydrogenation and desorption completed within few seconds in nanodots.
-
voltage induced reversible changes in the Magnetic Coercivity of fe zno heterostructures
Applied Physics Letters, 2014Co-Authors: Po Chun Chang, Cheng Jui Tsai, Tsung Chun Shieh, Fang Yuh LoAbstract:In this study, the Magnetic Coercivity (Hc) of Fe/ZnO heterostructure monotonically decreased as voltage was applied. The reversibility of this effect was demonstrated by cyclically changing the bias voltage from 0 to 6–9 V; the Hc decreased 15%–20%. The Hc value exhibited the same variation whether the applied voltage was positive or negative. As thick Fe-oxide gradually formed at the interface by using direct current heating, the Hc increased and the Fe/ZnO heterostructure demonstrated a similar voltage-induced reduction of Hc.
-
hydrogenation induced reversible modulation of perpendicular Magnetic Coercivity in pd co pd films
Applied Physics Letters, 2013Co-Authors: Cheng Jui Tsai, Boyao Wang, W F PongAbstract:In perpendicularly magnetized Pd/Co/Pd trilayers, the hydrogenation not only increased Kerr signal but also significantly enhanced the Magnetic Coercivity (H C ) by 17%. The reversibility was demonstrated by cyclic H2 exposure. The time constants of hydrogen absorption and desorption effect on H C range from tens to hundreds seconds, depending on the H2 gas pressure. The magneto-optical Kerr signal and Magnetic Coercivity was simultaneously recorded during H2 absorption and desorption. These multifarious signals respond differently and provide a detailed understanding of hydrogenation effect on the functional Pd/Co/Pd trilayers.
Po Chun Chang - One of the best experts on this subject based on the ideXlab platform.
-
Voltage induced reversible and irreversible change of Magnetic Coercivity in Co/ZnO heterostructure
Journal of Applied Physics, 2016Co-Authors: Po Chun Chang, Venkata Ramana Mudinepalli, Tsung Chun Hsieh, Fang Yuh LoAbstract:In this study, the application of bias voltage to 4–8 nm Co/275 nm ZnO heterostructures changed the Magnetic behavior reversibly or irreversibly, depending on the different voltage-induced mechanisms. The Magnetic Coercivity (Hc) monotonically decreased 20% when the small voltages of 0–8 V were applied. The Hc reduction was symmetric with the voltage polarity, and the reversibility was demonstrated by cyclically switching the bias voltage between 0 and 7 V. While a large voltage up to 40 V was applied to the Co/ZnO junction, the current heating effect became considerable and the Co-oxide was formed, as confirmed by depth-profiling X-ray photoemission spectroscopy analysis. The presence of Co-oxide in the Co films induced the irreversible reduction of the Kerr signal and Hc at room temperature. The considerable Hc enhancement at 130 K also indicates the exchange bias coupling effect from the antiferroMagnetic Co-oxide.
-
voltage induced reversible changes in the Magnetic Coercivity of fe zno heterostructures
Applied Physics Letters, 2014Co-Authors: Po Chun Chang, Cheng Jui Tsai, Tsung Chun Shieh, Fang Yuh LoAbstract:In this study, the Magnetic Coercivity (Hc) of Fe/ZnO heterostructure monotonically decreased as voltage was applied. The reversibility of this effect was demonstrated by cyclically changing the bias voltage from 0 to 6–9 V; the Hc decreased 15%–20%. The Hc value exhibited the same variation whether the applied voltage was positive or negative. As thick Fe-oxide gradually formed at the interface by using direct current heating, the Hc increased and the Fe/ZnO heterostructure demonstrated a similar voltage-induced reduction of Hc.
Keith S Murray - One of the best experts on this subject based on the ideXlab platform.
-
enhancing the Magnetic blocking temperature and Magnetic Coercivity of criii2lniii2 single molecule magnets via bridging ligand modification
Chemical Communications, 2016Co-Authors: Stuart K Langley, Daniel P Wielechowski, Boujemaa Moubaraki, Keith S MurrayAbstract:Replacing bridging benzoate ligands with 2-chloro-4,5-fluorobenzoate in a family of {CrIII2LnIII2} (Ln = Tb, Dy and Ho) single-molecule magnets result in significant improvements in Magnetic relaxation time, Magnetic hysteresis blocking temperature and Magnetic Coercivity.
-
Enhancing the Magnetic blocking temperature and Magnetic Coercivity of {CrIII2LnIII2} single-molecule magnets via bridging ligand modification
Chemical Communications, 2016Co-Authors: Stuart K Langley, Daniel P Wielechowski, Boujemaa Moubaraki, Keith S MurrayAbstract:Replacing bridging benzoate ligands with 2-chloro-4,5-fluorobenzoate in a family of {CrIII2LnIII2} (Ln = Tb, Dy and Ho) single-molecule magnets result in significant improvements in Magnetic relaxation time, Magnetic hysteresis blocking temperature and Magnetic Coercivity.
M R Ibarra - One of the best experts on this subject based on the ideXlab platform.
-
double perovskites with ferromagnetism above room temperature
Journal of Physics: Condensed Matter, 2007Co-Authors: David Serrate, J M De Teresa, M R IbarraAbstract:We review the structural, Magnetic and transport properties of double perovskites (A2BB'O6) with ferromagnetism above room temperature. Ferromagnetism in these compounds is explained by an indirect B?O?B'?O?B exchange interaction mediated by itinerant electrons. We first focus on the BB' =?FeMo-based double perovskites, with Sr2FeMoO6 (TC = 420?K) being the most studied compound. These compounds show metallic behaviour and low Magnetic Coercivity. Afterwards, we will focus on B' = Re compounds, where the significant orbital moment of Re plays a crucial role in the Magnetic properties, for example in the large Magnetic Coercivity and magnetostructural coupling. More specifically, we first discuss the A2FeReO6 series, with maximum TC = 520?K for Ca2FeReO6, which shows a tendency to semiconducting behaviour. Finally, we describe the Sr2(Fe1?xCrx)ReO6 series, with maximum TC = 625?K for Sr2CrReO6, which is the highest TC in an oxide compound without Fe. This compound is metallic. We discuss the impact of these materials for spin electronics in the light of their high spin polarization at the Fermi level and metallicity. In particular, we focus on the large intergrain magnetoresistance effect observed in polycrystalline samples and the possible implementation of these materials as electrodes in Magnetic tunnel junctions.
