The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform
S N Atluri - One of the best experts on this subject based on the ideXlab platform.
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spherical nano inhomogeneity with the steigmann ogden interface model under general uniform far field stress loading
International Journal of Solids and Structures, 2020Co-Authors: Junbo Wang, Peng Yan, Leiting Dong, S N AtluriAbstract:Abstract An explicit solution, considering the interface bending resistance as described by the Steigmann–Ogden interface model, is derived for the problem of a spherical nano-inhomogeneity (nanoscale void/inclusion) embedded in an infinite linear-elastic matrix under a general uniform far-field-stress (including tensile and shear stresses). The Papkovich-Neuber (P-N) general solutions, which are expressed in terms of spherical harmonics, are used to derive the analytical solution. A superposition technique is used to overcome the Mathematical Complexity brought on by the assumed interfacial residual stress in the Steigmann-Ogden interface model. Numerical examples show that the stress field, considering the interface bending resistance as with the Steigmann–Ogden interface model, differs significantly from that considering only the interface stretching resistance as with the Gurtin–Murdoch interface model. In addition to the size-dependency, another interesting phenomenon is observed: some stress components are invariant to interface bending stiffness parameters along a certain circle in the inclusion/matrix. Moreover, a characteristic line for the interface bending stiffness parameters is presented, near which the stress concentration becomes quite severe. Finally, the derived analytical solution with the Steigmann–Ogden interface model is provided in the supplemental MATLAB code, which can be easily executed, and used as a benchmark for semi-analytical solutions and numerical solutions in future studies.
Junbo Wang - One of the best experts on this subject based on the ideXlab platform.
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spherical nano inhomogeneity with the steigmann ogden interface model under general uniform far field stress loading
International Journal of Solids and Structures, 2020Co-Authors: Junbo Wang, Peng Yan, Leiting Dong, S N AtluriAbstract:Abstract An explicit solution, considering the interface bending resistance as described by the Steigmann–Ogden interface model, is derived for the problem of a spherical nano-inhomogeneity (nanoscale void/inclusion) embedded in an infinite linear-elastic matrix under a general uniform far-field-stress (including tensile and shear stresses). The Papkovich-Neuber (P-N) general solutions, which are expressed in terms of spherical harmonics, are used to derive the analytical solution. A superposition technique is used to overcome the Mathematical Complexity brought on by the assumed interfacial residual stress in the Steigmann-Ogden interface model. Numerical examples show that the stress field, considering the interface bending resistance as with the Steigmann–Ogden interface model, differs significantly from that considering only the interface stretching resistance as with the Gurtin–Murdoch interface model. In addition to the size-dependency, another interesting phenomenon is observed: some stress components are invariant to interface bending stiffness parameters along a certain circle in the inclusion/matrix. Moreover, a characteristic line for the interface bending stiffness parameters is presented, near which the stress concentration becomes quite severe. Finally, the derived analytical solution with the Steigmann–Ogden interface model is provided in the supplemental MATLAB code, which can be easily executed, and used as a benchmark for semi-analytical solutions and numerical solutions in future studies.
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spherical nano inhomogeneity with steigmann ogden interface model under general uniform far field stress
2019Co-Authors: Junbo Wang, Peng Yan, Leiting DongAbstract:An explicit analytical solution considering interface bending resistance based on the Steigmann-Ogden interface model is derived for a spherical nano-inhomogeneity (nanoscale void/inclusion) embedded in an infinite matrix under general uniform far-field stress (including both tension and shear). The Papkovich-Neuber (P-N) general solutions, which are expressed in terms of spherical harmonics, are used to derive the analytical solution. A superposition technique for the Steigmann-Ogden interface model is introduced to overcome the Mathematical Complexity in the Steigmann-Ogden interface model, that is the nonlinearity of the constitutive relation brought by interface residual stress. Numerical examples show that the stress fields considering the interface bending resistance with the Steigmann-Ogden interface model, differ a lot from those considering only the interface stretching resistance with the Gurtin-Murdoch interface model, when interface bending parameters get closed to the characteristic line introduced in this study. In addition to size-dependency phenomenon, it is also observed that some stress components are invariant to interface bending stiffness parameters at a certain circle in the inclusion/matrix. A characteristic line for the interface bending stiffness parameters is presented, near which the stress concentration phenomenon becomes quite severe. The derived explicit analytical solution with the Steigmann-Ogden interface model can be used as a benchmark for semi-analytical solutions and numerical solutions.
Leiting Dong - One of the best experts on this subject based on the ideXlab platform.
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spherical nano inhomogeneity with the steigmann ogden interface model under general uniform far field stress loading
International Journal of Solids and Structures, 2020Co-Authors: Junbo Wang, Peng Yan, Leiting Dong, S N AtluriAbstract:Abstract An explicit solution, considering the interface bending resistance as described by the Steigmann–Ogden interface model, is derived for the problem of a spherical nano-inhomogeneity (nanoscale void/inclusion) embedded in an infinite linear-elastic matrix under a general uniform far-field-stress (including tensile and shear stresses). The Papkovich-Neuber (P-N) general solutions, which are expressed in terms of spherical harmonics, are used to derive the analytical solution. A superposition technique is used to overcome the Mathematical Complexity brought on by the assumed interfacial residual stress in the Steigmann-Ogden interface model. Numerical examples show that the stress field, considering the interface bending resistance as with the Steigmann–Ogden interface model, differs significantly from that considering only the interface stretching resistance as with the Gurtin–Murdoch interface model. In addition to the size-dependency, another interesting phenomenon is observed: some stress components are invariant to interface bending stiffness parameters along a certain circle in the inclusion/matrix. Moreover, a characteristic line for the interface bending stiffness parameters is presented, near which the stress concentration becomes quite severe. Finally, the derived analytical solution with the Steigmann–Ogden interface model is provided in the supplemental MATLAB code, which can be easily executed, and used as a benchmark for semi-analytical solutions and numerical solutions in future studies.
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spherical nano inhomogeneity with steigmann ogden interface model under general uniform far field stress
2019Co-Authors: Junbo Wang, Peng Yan, Leiting DongAbstract:An explicit analytical solution considering interface bending resistance based on the Steigmann-Ogden interface model is derived for a spherical nano-inhomogeneity (nanoscale void/inclusion) embedded in an infinite matrix under general uniform far-field stress (including both tension and shear). The Papkovich-Neuber (P-N) general solutions, which are expressed in terms of spherical harmonics, are used to derive the analytical solution. A superposition technique for the Steigmann-Ogden interface model is introduced to overcome the Mathematical Complexity in the Steigmann-Ogden interface model, that is the nonlinearity of the constitutive relation brought by interface residual stress. Numerical examples show that the stress fields considering the interface bending resistance with the Steigmann-Ogden interface model, differ a lot from those considering only the interface stretching resistance with the Gurtin-Murdoch interface model, when interface bending parameters get closed to the characteristic line introduced in this study. In addition to size-dependency phenomenon, it is also observed that some stress components are invariant to interface bending stiffness parameters at a certain circle in the inclusion/matrix. A characteristic line for the interface bending stiffness parameters is presented, near which the stress concentration phenomenon becomes quite severe. The derived explicit analytical solution with the Steigmann-Ogden interface model can be used as a benchmark for semi-analytical solutions and numerical solutions.
Peng Yan - One of the best experts on this subject based on the ideXlab platform.
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spherical nano inhomogeneity with the steigmann ogden interface model under general uniform far field stress loading
International Journal of Solids and Structures, 2020Co-Authors: Junbo Wang, Peng Yan, Leiting Dong, S N AtluriAbstract:Abstract An explicit solution, considering the interface bending resistance as described by the Steigmann–Ogden interface model, is derived for the problem of a spherical nano-inhomogeneity (nanoscale void/inclusion) embedded in an infinite linear-elastic matrix under a general uniform far-field-stress (including tensile and shear stresses). The Papkovich-Neuber (P-N) general solutions, which are expressed in terms of spherical harmonics, are used to derive the analytical solution. A superposition technique is used to overcome the Mathematical Complexity brought on by the assumed interfacial residual stress in the Steigmann-Ogden interface model. Numerical examples show that the stress field, considering the interface bending resistance as with the Steigmann–Ogden interface model, differs significantly from that considering only the interface stretching resistance as with the Gurtin–Murdoch interface model. In addition to the size-dependency, another interesting phenomenon is observed: some stress components are invariant to interface bending stiffness parameters along a certain circle in the inclusion/matrix. Moreover, a characteristic line for the interface bending stiffness parameters is presented, near which the stress concentration becomes quite severe. Finally, the derived analytical solution with the Steigmann–Ogden interface model is provided in the supplemental MATLAB code, which can be easily executed, and used as a benchmark for semi-analytical solutions and numerical solutions in future studies.
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spherical nano inhomogeneity with steigmann ogden interface model under general uniform far field stress
2019Co-Authors: Junbo Wang, Peng Yan, Leiting DongAbstract:An explicit analytical solution considering interface bending resistance based on the Steigmann-Ogden interface model is derived for a spherical nano-inhomogeneity (nanoscale void/inclusion) embedded in an infinite matrix under general uniform far-field stress (including both tension and shear). The Papkovich-Neuber (P-N) general solutions, which are expressed in terms of spherical harmonics, are used to derive the analytical solution. A superposition technique for the Steigmann-Ogden interface model is introduced to overcome the Mathematical Complexity in the Steigmann-Ogden interface model, that is the nonlinearity of the constitutive relation brought by interface residual stress. Numerical examples show that the stress fields considering the interface bending resistance with the Steigmann-Ogden interface model, differ a lot from those considering only the interface stretching resistance with the Gurtin-Murdoch interface model, when interface bending parameters get closed to the characteristic line introduced in this study. In addition to size-dependency phenomenon, it is also observed that some stress components are invariant to interface bending stiffness parameters at a certain circle in the inclusion/matrix. A characteristic line for the interface bending stiffness parameters is presented, near which the stress concentration phenomenon becomes quite severe. The derived explicit analytical solution with the Steigmann-Ogden interface model can be used as a benchmark for semi-analytical solutions and numerical solutions.
Mohammad Shahidehpour - One of the best experts on this subject based on the ideXlab platform.
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convex relaxation of combined heat and power dispatch
IEEE Transactions on Power Systems, 2021Co-Authors: Yibao Jiang, Can Wan, Audun Botterud, Yonghua Song, Mohammad ShahidehpourAbstract:Combined heat, and power dispatch promotes interactions, and synergies between electric power systems, and district heating systems. However, nonlinear, and nonconvex heating flow imposes significant challenges on finding qualified solutions efficiently. Most existing methods rely on constant flow assumptions to derive a linear heating flow model, sacrificing optimality for computational simplicity. This paper proposes a novel convex combined heat, and power dispatch model based on model simplification, and constraint relaxations, which improves solution quality, and avoids assumptions on operating regimes of district heating systems. To alleviate Mathematical Complexity introduced by the commonly used node method, a simplified thermal dynamic model is proposed to capture temperature changes in networked pipelines. Quadratic, and polyhedral relaxations are then applied to convexify the original problem with quadratic equality, and bilinear constraints. Furthermore, an adaptive solution algorithm is developed to successively reduce the relaxation area based on sequential bound tightening, which improves solution optimality with desirable computational efficiency. The proposed method is verified on a distribution-level, and a transmission-level integrated electricity, and heat systems, compared to constant-flow-based solutions, and iterative algorithms.