The Experts below are selected from a list of 82263 Experts worldwide ranked by ideXlab platform
Satoshi Sugahara - One of the best experts on this subject based on the ideXlab platform.
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nonvolatile static random access Memory based on spin transistor architecture
Journal of Applied Physics, 2009Co-Authors: Yusuke Shuto, Shuuichirou Yamamoto, Satoshi SugaharaAbstract:The authors proposed and computationally analyzed nonvolatile static random access Memory (NV-SRAM) architecture using a new type of spin transistor comprised of a metal-oxide-semiconductor field-effect transistor (MOSFET) and magnetic tunnel junction (MTJ) that is referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit approach to reproduce the functions of spin transistors, based on recently progressed magnetoresistive random access Memory Technology. The proposed NV-SRAM cell can be simply configured by connecting two PS-MOSFETs to the storage nodes of a standard SRAM cell.
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Nonvolatile static random access Memory based on spin-transistor architecture
Journal of Applied Physics, 2009Co-Authors: Satoshi SugaharaAbstract:The authors proposed and computationally analyzed nonvolatile static random access Memory (NV-SRAM) architecture using a new type of spin transistor comprised of a metal-oxide-semiconductor field-effect transistor (MOSFET) and magnetic tunnel junction (MTJ) that is referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit approach to reproduce the functions of spin transistors, based on recently progressed magnetoresistive random access Memory Technology. The proposed NV-SRAM cell can be simply configured by connecting two PS-MOSFETs to the storage nodes of a standard SRAM cell.The authors proposed and computationally analyzed nonvolatile static random access Memory (NV-SRAM) architecture using a new type of spin transistor comprised of a metal-oxide-semiconductor field-effect transistor (MOSFET) and magnetic tunnel junction (MTJ) that is referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit approach to reproduce the functions of spin transistors, based on recently progressed magnetoresistive random access Memory Technology. The proposed NV-SRAM cell can be simply configured by connecting two PS-MOSFETs to the storage nodes of a standard SRAM cell.
Jiamian Hu - One of the best experts on this subject based on the ideXlab platform.
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high density magnetoresistive random access Memory operating at ultralow voltage at room temperature
Nature Communications, 2011Co-Authors: Jiamian Hu, Zheng Li, Longqing ChenAbstract:Magnetoresistive random access Memory offers significant promise as a next-generation Memory Technology. Nan and colleagues present a design concept for a device that simultaneously possesses ultrahigh storage capacity, ultralow power dissipation, and high-speed operation at room temperature.
Jiangang Zhu - One of the best experts on this subject based on the ideXlab platform.
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magnetoresistive random access Memory the path to competitiveness and scalability
Proceedings of the IEEE, 2008Co-Authors: Jiangang ZhuAbstract:This paper provides an in-depth review of the magnetoresistive random access Memory Technology and its developments over the past decade. Both the traditional field-driven and more recent spin torque transfer driven designs are discussed. By pointing out key technical challenges, important aspects and characteristics of various designs are used to illustrate mechanisms that overcome the technical obstacles. A significant portion of this paper is devoted to the principles of various designs based on spin torque transfer effect, including Memory elements with in-plane and perpendicular magnetic electrodes.
Longqing Chen - One of the best experts on this subject based on the ideXlab platform.
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high density magnetoresistive random access Memory operating at ultralow voltage at room temperature
Nature Communications, 2011Co-Authors: Jiamian Hu, Zheng Li, Longqing ChenAbstract:Magnetoresistive random access Memory offers significant promise as a next-generation Memory Technology. Nan and colleagues present a design concept for a device that simultaneously possesses ultrahigh storage capacity, ultralow power dissipation, and high-speed operation at room temperature.
Yusuke Shuto - One of the best experts on this subject based on the ideXlab platform.
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nonvolatile static random access Memory based on spin transistor architecture
Journal of Applied Physics, 2009Co-Authors: Yusuke Shuto, Shuuichirou Yamamoto, Satoshi SugaharaAbstract:The authors proposed and computationally analyzed nonvolatile static random access Memory (NV-SRAM) architecture using a new type of spin transistor comprised of a metal-oxide-semiconductor field-effect transistor (MOSFET) and magnetic tunnel junction (MTJ) that is referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit approach to reproduce the functions of spin transistors, based on recently progressed magnetoresistive random access Memory Technology. The proposed NV-SRAM cell can be simply configured by connecting two PS-MOSFETs to the storage nodes of a standard SRAM cell.