The Experts below are selected from a list of 21 Experts worldwide ranked by ideXlab platform
Dong Lin - One of the best experts on this subject based on the ideXlab platform.
-
Effect of air slide-film damping on Micro-Mechanical Sensor at atmosphere
Journal of Engineering Design, 2003Co-Authors: Dong LinAbstract:The authors design and fabricate a new bar capacitive Micro\|Mechanical accelerometer. Its air slide\|film damping is studied. The test results indicate that the quality factor Q of the bar structure accelerometer is 504. The bar capacitive testing structure having high Q can be used in the tesing mode of MicroMechanical gyroscope which is not necessary to be encapsulated in the vacuum, can work at the atmosphere having high Q.The testing result of the gyroscope having bar structure indicate that the Q can reach 715 in the atmosphere environment.
Susumu Sugiyama - One of the best experts on this subject based on the ideXlab platform.
-
n-Type β-SiC Piezoresistance Analysis Under High Temperature and High Impurity Concentration
Transducers ’01 Eurosensors XV, 2001Co-Authors: Toshiyuki Toriyama, Susumu SugiyamaAbstract:The piezoresistance in n-type β-SiC was analyzed on the basis of electron transport and mobility shift for cubic many-valley semiconductors. Two deformation potential constants, Ξ d and Ξ u of n-type β-SiC, were found to be Ξ d = −7.4eV and Ξ u = 6.7eV. Conduction band edge shift due to stress, gauge factor and piezoresistive coefficients, were calculated by using Ξ d and Ξ u . In the degenerate case, incorporation of the electron transport and the mobility shift mechanisms gives better interpretation for piezoresistance. For practical Micro Mechanical Sensor design, gauge factor and piezoresistive coefficients π 11 and π 12 were calculated as a function of temperature and impurity concentration.
-
Analysis of the piezoresistive effect in n-type /spl beta/-SiC based on electron transport and deformation potential theory
MHS2000. Proceedings of 2000 International Symposium on Micromechatronics and Human Science (Cat. No.00TH8530), 1Co-Authors: Toshiyuki Toriyama, Susumu SugiyamaAbstract:The piezoresistive effect in n type /spl beta/-SiC was analyzed on the basis of electron transport and deformation potential theory for cubic many-valley semiconductors. Two deformation potential constants, /spl Xi//sub d/ and /spl Xi//sub u/ of the n-type /spl beta/-SiC, were independently determined by Herring-Vogt theory, which is an extension of Bardeen-Shockley theory for single spherical surface energy semiconductor to the many-valley semiconductor. Shifts of conduction band edges against arbitrary stress components were explicitly formulated by using /spl Xi//sub d/ and /spl Xi//sub u/. Applying stress, the electrons transport between the many-valleys. The electron transport represents macroscopic change in electrical conductivity. Then, shifts of the conduction band edges in each valley were related to the electron transport. Finally, the origin of the piezoresistive effect was interpreted as the electron transport between the many-valleys due to stress. For practical Micro Mechanical Sensor design, piezoresistive coefficients /spl pi//sub 11/ and /spl pi//sub 12/ and gauge factor were calculated as a function of temperature and impurity concentration.
Toshiyuki Toriyama - One of the best experts on this subject based on the ideXlab platform.
-
n-Type β-SiC Piezoresistance Analysis Under High Temperature and High Impurity Concentration
Transducers ’01 Eurosensors XV, 2001Co-Authors: Toshiyuki Toriyama, Susumu SugiyamaAbstract:The piezoresistance in n-type β-SiC was analyzed on the basis of electron transport and mobility shift for cubic many-valley semiconductors. Two deformation potential constants, Ξ d and Ξ u of n-type β-SiC, were found to be Ξ d = −7.4eV and Ξ u = 6.7eV. Conduction band edge shift due to stress, gauge factor and piezoresistive coefficients, were calculated by using Ξ d and Ξ u . In the degenerate case, incorporation of the electron transport and the mobility shift mechanisms gives better interpretation for piezoresistance. For practical Micro Mechanical Sensor design, gauge factor and piezoresistive coefficients π 11 and π 12 were calculated as a function of temperature and impurity concentration.
-
Analysis of the piezoresistive effect in n-type /spl beta/-SiC based on electron transport and deformation potential theory
MHS2000. Proceedings of 2000 International Symposium on Micromechatronics and Human Science (Cat. No.00TH8530), 1Co-Authors: Toshiyuki Toriyama, Susumu SugiyamaAbstract:The piezoresistive effect in n type /spl beta/-SiC was analyzed on the basis of electron transport and deformation potential theory for cubic many-valley semiconductors. Two deformation potential constants, /spl Xi//sub d/ and /spl Xi//sub u/ of the n-type /spl beta/-SiC, were independently determined by Herring-Vogt theory, which is an extension of Bardeen-Shockley theory for single spherical surface energy semiconductor to the many-valley semiconductor. Shifts of conduction band edges against arbitrary stress components were explicitly formulated by using /spl Xi//sub d/ and /spl Xi//sub u/. Applying stress, the electrons transport between the many-valleys. The electron transport represents macroscopic change in electrical conductivity. Then, shifts of the conduction band edges in each valley were related to the electron transport. Finally, the origin of the piezoresistive effect was interpreted as the electron transport between the many-valleys due to stress. For practical Micro Mechanical Sensor design, piezoresistive coefficients /spl pi//sub 11/ and /spl pi//sub 12/ and gauge factor were calculated as a function of temperature and impurity concentration.
Chris R. Chatwin - One of the best experts on this subject based on the ideXlab platform.
-
A MEMS viscometer for unadulterated human blood
Measurement: Journal of the International Measurement Confederation, 2010Co-Authors: P. D. Smith, R. C.d. Young, Chris R. ChatwinAbstract:The design and theoretical modelling of an oscillating Micro-Mechanical viscometer designed for the measurement of whole unadulterated human blood, is described. The proposed device utilises the dependence of the squeeze-film damping ratio on properties of the surrounding fluid to measure fluid viscosity using an oscillating plate structure. The optimum geometrical configuration for the device structure has been investigated and a methodology for defining the optimum configuration of the Micro-Mechanical Sensor identified. This is then applied to calculate the predicted noise equivalent viscosity change NE Δ η. It was found that the device performance is limited by electronic noise within the detection circuitry rather than thermal-Mechanical noise. An electronic noise limited measurement resolution of ≤ 0.11 %, is predicted for measurement over a shear range of 1.0 → 1000 s- 1, at a measurement bandwidth of 50 Hz. The linearity of response of the Micro-Mechanical viscometer is considered and the device is predicted to provide a linear measurement response. © 2009 Elsevier Ltd. All rights reserved.
P. D. Smith - One of the best experts on this subject based on the ideXlab platform.
-
A MEMS viscometer for unadulterated human blood
Measurement: Journal of the International Measurement Confederation, 2010Co-Authors: P. D. Smith, R. C.d. Young, Chris R. ChatwinAbstract:The design and theoretical modelling of an oscillating Micro-Mechanical viscometer designed for the measurement of whole unadulterated human blood, is described. The proposed device utilises the dependence of the squeeze-film damping ratio on properties of the surrounding fluid to measure fluid viscosity using an oscillating plate structure. The optimum geometrical configuration for the device structure has been investigated and a methodology for defining the optimum configuration of the Micro-Mechanical Sensor identified. This is then applied to calculate the predicted noise equivalent viscosity change NE Δ η. It was found that the device performance is limited by electronic noise within the detection circuitry rather than thermal-Mechanical noise. An electronic noise limited measurement resolution of ≤ 0.11 %, is predicted for measurement over a shear range of 1.0 → 1000 s- 1, at a measurement bandwidth of 50 Hz. The linearity of response of the Micro-Mechanical viscometer is considered and the device is predicted to provide a linear measurement response. © 2009 Elsevier Ltd. All rights reserved.