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Vladimir V. Voronkov - One of the best experts on this subject based on the ideXlab platform.
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The effect of carbon and antimony on grown-in Microdefects in Czochralski silicon crystals
Materials Science and Engineering: B, 2006Co-Authors: M. Porrini, Vladimir V. Voronkov, Robert J. FalsterAbstract:Abstract Some impurities are known to modify the properties of grown-in Microdefects in Si crystals at relatively low concentrations when the only operating mechanism is trapping of either vacancies (V) or self-interstitials (I), or both, by the major impurity state. First of all, doping affects the critical value of the ratio V / G , of the growth rate and the axial temperature gradient, that separates the range of V-based Microdefects (at higher V / G ) from the range of I-based Microdefects (at lower V / G ). The two representative impurities studied – carbon and antimony – exhibit opposite effects: carbon increases ( V / G ) cr thus expanding the interstitial region of a crystal, while antimony reduces ( V / G ) cr thus expanding the vacancy region. Another important effect of impurities is that Microdefect formation may occur under a condition of a strong trapping which results in an reduction of the Microdefect size and accordingly in an increase in the density. For carbon, a strong self-interstitial trapping (in the I-mode) is evidenced by an increased Microdefect density. For antimony, vacancy trapping (in the V-mode) is apparently insignificant; void size is increased, due to an increased concentration of incorporated vacancies.
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simplified two dimensional quantification of the grown in Microdefect distributions in czochralski grown silicon crystals
Journal of The Electrochemical Society, 2005Co-Authors: Milind S. Kulkarni, Vladimir V. VoronkovAbstract:A computationally efficient model to quantify the Microdefect distributions in Czochralski grown silicon crystals is proposed andnumerically solved. All Microdefects are approximated as spherical clusters. The novelty of the proposed model centers on asimplified treatment of the population of the clusters at any location; the average radius of the clusters in the population isapproximated by the square root of the average of the squared radii of all clusters. The formation of the clusters is described bythe classical nucleation theory. The growth of the clusters at any location is quantified by an auxiliary variable proportional to thetotal surface area of the clusters present at the location. A comparison between the predictions of the novel model with both atraditional model treating the size distribution of the clusters in the actual cluster population and the experimental observationsvalidate the novel model.© 2005 The Electrochemical Society. DOI: 10.1149/1.2001447 All rights reserved.Manuscript submitted December 8, 2004; revised manuscript received March 11, 2005. Available electronically August 25, 2005.
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quantification of defect dynamics in unsteady state and steady state czochralski growth of monocrystalline silicon
Journal of The Electrochemical Society, 2004Co-Authors: Milind Kulkarni, Vladimir V. Voronkov, Robert J. FalsterAbstract:Most common Microdefects in Czochralski silicon, voids and dislocation loops, are formed by agglomeration of point defects, vacancies, and self-interstitials, respectively. Dynamics of formation and growth of the Microdefects along with the entire crystal pulling process is simulated. The Frenkel reaction, the transport and nucleation of the point defects, and the growth of the Microdefects are considered to occur simultaneously. The nucleation is modeled using the classical nucleation theory. The Microdefects are approximated as spherical clusters, which grow by a diffusion-limited kinetics. The Microdefect distribution at any given location is captured on the basis of the formation and path histories of the clusters. The Microdefect type and size distributions in crystals grown under various steady states as well as unsteady states are predicted. The developed one-dimensional model captures the salient features of defect dynamics and reveals significant differences between the steady-state defect dynamics and the unsteady-state defect dynamics. The model predictions agree very well with the experimental observations. Various predictions of the model are presented, and results are discussed. © 2004 The Electrochemical Society. @DOI: 10.1149/1.1785792# All rights reserved.
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Simplified two-dimensional quantification of the Microdefect distributions in silicon crystals grown by the Czochralski process
2004Co-Authors: Milind Kulkarni, Vladimir V. VoronkovAbstract:A computationally efficient model to quantify the Microdefect distributions in Czochralski grown silicon crystals is proposed and numerically solved. All Microdefects are approximated as spherical clusters. The novelty of the proposed model centers on a simplified treatment of the population of the clusters at any location; the average radius of the clusters in the population is approximated by the square root of the average of the square of the radii of all clusters. The formation of the clusters is described by the application of the classical nucleation theory. The growth of the clusters at any location is quantified by an auxiliary variable proportional to the total surface area of the clusters present at the location. A comparison between the predictions of the novel model with a traditional model treating the size distribution of the clusters in the actual cluster population and the experimental observations validate the model.
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grown in Microdefects residual vacancies and oxygen precipitation bands in czochralski silicon
Journal of Crystal Growth, 1999Co-Authors: Vladimir V. Voronkov, R FalsterAbstract:A model of multi-step vacancy aggregation in dislocation-free silicon crystals is analyzed. In this model, voids are first nucleated (normally just below 1100°C). The vacancy loss to voids is retarded below some characteristic temperature (about 1020°C) as the vacancies become bound by oxygen into O2V complexes. These remaining vacancies control nucleation of oxide particles on further cooling. Some vacancies survive even this stage and control nucleation of oxygen clusters at still lower temperature (around 700°C). The oxygen clusters are major precipitation nuclei during subsequent heat treatments. It is through residual vacancies that the oxygen precipitation behavior is closely related to the grown-in Microdefects (voids and particles). The Microdefect properties and the residual vacancy concentration () are computed in dependence of the starting vacancy concentration (). The function is of a twin-peak type which results in a banded precipitation pattern if decreases gradually either in radial or axial direction. The model accounts for complicated (strongly banded) precipitation patterns, particularly those observed in halted and quenched crystals.
V. I. Talanin - One of the best experts on this subject based on the ideXlab platform.
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Formation of Microdefects in semiconductor silicon
Crystallography Reports, 2004Co-Authors: V. I. Talanin, I. E. Talanin, D. I. LevinzonAbstract:The distribution patterns and physical nature (the sign of the lattice strain) of growth Microdefects in dislocation-free Si single crystals grown by the floating-zone and Czochralski methods were studied by selective etching and transmission electron microscopy. Mechanisms of formation and transformation of growth Microdefects, depending on the crystal growth rate, are proposed. A heterogeneous mechanism of formation of Microdefects is considered.
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Microdefects formation in dislocation-free float-zone and Czochralski silicon single crystals
2003Co-Authors: V. I. Talanin, I. E. TalaninAbstract:Basing upon complex researches of monocrystals FZ-Si, a mechanism of Microdefect formation is confirmed.It is established that the formation of Microdefects happens by two mechanisms: vacancy and interstitial ones. The comparison of the data on CZ-Si and FZ-Si shows that this mechanism can be applied to CZ-Si with allowance for a modification of growth conditions and is significant for a larger content of impurities.
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Physics of the formation of Microdefects in dislocation-free monocrystals of float-zone silicon
Semiconductor Science and Technology, 2002Co-Authors: V. I. Talanin, I. E. Talanin, D. I. LevinsonAbstract:We study non-doped dislocation-free monocrystals of float-zone silicon using transmission electronic microscopy, optical microscopy and x-ray topography. The crystals were obtained with various growth rates (1–9 mm min−1) and were subjected to various kinds of thermal processing. We experimentally determine the temperatures at which Microdefects of various types form, and we establish the mechanism of transformation of interstitial Microdefects. On the basis of data in the literature and new results obtained by authors, we establish that the formation of Microdefects in silicon occurs on two independent mechanisms: vacancy and interstitial. As a result of both these mechanisms, D-Microdefects will be formed as interstitials agglomerate. We suggest that the critical parameter V/G = Ccrit describes the conditions of emerging (vanishing) vacancy Microdefects. On the basis of these results, we suggest a physical model of the formation of Microdefects in dislocation-free monocrystals of float-zone silicon, and we discuss other known models.
D. I. Levinson - One of the best experts on this subject based on the ideXlab platform.
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Physics of the formation of Microdefects in dislocation-free monocrystals of float-zone silicon
Semiconductor Science and Technology, 2002Co-Authors: V. I. Talanin, I. E. Talanin, D. I. LevinsonAbstract:We study non-doped dislocation-free monocrystals of float-zone silicon using transmission electronic microscopy, optical microscopy and x-ray topography. The crystals were obtained with various growth rates (1–9 mm min−1) and were subjected to various kinds of thermal processing. We experimentally determine the temperatures at which Microdefects of various types form, and we establish the mechanism of transformation of interstitial Microdefects. On the basis of data in the literature and new results obtained by authors, we establish that the formation of Microdefects in silicon occurs on two independent mechanisms: vacancy and interstitial. As a result of both these mechanisms, D-Microdefects will be formed as interstitials agglomerate. We suggest that the critical parameter V/G = Ccrit describes the conditions of emerging (vanishing) vacancy Microdefects. On the basis of these results, we suggest a physical model of the formation of Microdefects in dislocation-free monocrystals of float-zone silicon, and we discuss other known models.
I. E. Talanin - One of the best experts on this subject based on the ideXlab platform.
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Formation of Microdefects in semiconductor silicon
Crystallography Reports, 2004Co-Authors: V. I. Talanin, I. E. Talanin, D. I. LevinzonAbstract:The distribution patterns and physical nature (the sign of the lattice strain) of growth Microdefects in dislocation-free Si single crystals grown by the floating-zone and Czochralski methods were studied by selective etching and transmission electron microscopy. Mechanisms of formation and transformation of growth Microdefects, depending on the crystal growth rate, are proposed. A heterogeneous mechanism of formation of Microdefects is considered.
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Microdefects formation in dislocation-free float-zone and Czochralski silicon single crystals
2003Co-Authors: V. I. Talanin, I. E. TalaninAbstract:Basing upon complex researches of monocrystals FZ-Si, a mechanism of Microdefect formation is confirmed.It is established that the formation of Microdefects happens by two mechanisms: vacancy and interstitial ones. The comparison of the data on CZ-Si and FZ-Si shows that this mechanism can be applied to CZ-Si with allowance for a modification of growth conditions and is significant for a larger content of impurities.
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Physics of the formation of Microdefects in dislocation-free monocrystals of float-zone silicon
Semiconductor Science and Technology, 2002Co-Authors: V. I. Talanin, I. E. Talanin, D. I. LevinsonAbstract:We study non-doped dislocation-free monocrystals of float-zone silicon using transmission electronic microscopy, optical microscopy and x-ray topography. The crystals were obtained with various growth rates (1–9 mm min−1) and were subjected to various kinds of thermal processing. We experimentally determine the temperatures at which Microdefects of various types form, and we establish the mechanism of transformation of interstitial Microdefects. On the basis of data in the literature and new results obtained by authors, we establish that the formation of Microdefects in silicon occurs on two independent mechanisms: vacancy and interstitial. As a result of both these mechanisms, D-Microdefects will be formed as interstitials agglomerate. We suggest that the critical parameter V/G = Ccrit describes the conditions of emerging (vanishing) vacancy Microdefects. On the basis of these results, we suggest a physical model of the formation of Microdefects in dislocation-free monocrystals of float-zone silicon, and we discuss other known models.
Milind S. Kulkarni - One of the best experts on this subject based on the ideXlab platform.
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DEFECT DYNAMICS IN THE PRESENCE OF NITROGEN AND OXYGEN IN GROWING CZOCHRALSKI SILICON CRYSTALS
2016Co-Authors: Milind S. KulkarniAbstract:Many structural imperfections form in silicon crystals during their Czochralski growth. The distribution of these Microdefects can be strongly influenced and controlled by the addition of impurities such as nitrogen to the crystal. A model describing the Czochralski defect dynamics in the presence of nitrogen and oxygen is proposed and solved. The reactions between vacancies and self-interstitials, nitrogen monomers and dimers, nitrogen and vacancies, and the reactions involving vacancies, oxygen, and complexes of vacancies and oxygen are incorporated, along with the formation of various Microdefects−the agglomerates of vacancies, self-interstitials, and of oxygen (silicon dioxide). All Microdefects are approximated as spherical clusters. The formation of all clusters is described by the classical nucleation theory. The clusters, once formed, grow by a diffusion-limited kinetics. The Microdefect distributions in Czochralski crystals growing under steady state as well as unsteady state are discussed
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efficient computation of population distribution of Microdefects at any location in growing czochralski silicon single crystals
Journal of Crystal Growth, 2014Co-Authors: Gaurab Samanta, Milind S. KulkarniAbstract:Abstract A computationally efficient model to quantify the distribution of Microdefect population at any given location in Czochralski grown silicon crystals is proposed and numerically solved. For this purpose, all Microdefects are approximated as spherical clusters and the concentration fields of intrinsic point defects and other intermediate species are evolved using a lumped model which eliminates the requirement to store formation and path histories of the clusters. The formation of all clusters is modeled by the classical nucleation theory, while they grow by diffusion-limited kinetics. The model is validated by comparing its predictions against that of a rigorous model, where actual cluster population distribution is captured on the basis of formation and path histories of the clusters.
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simplified two dimensional quantification of the grown in Microdefect distributions in czochralski grown silicon crystals
Journal of The Electrochemical Society, 2005Co-Authors: Milind S. Kulkarni, Vladimir V. VoronkovAbstract:A computationally efficient model to quantify the Microdefect distributions in Czochralski grown silicon crystals is proposed andnumerically solved. All Microdefects are approximated as spherical clusters. The novelty of the proposed model centers on asimplified treatment of the population of the clusters at any location; the average radius of the clusters in the population isapproximated by the square root of the average of the squared radii of all clusters. The formation of the clusters is described bythe classical nucleation theory. The growth of the clusters at any location is quantified by an auxiliary variable proportional to thetotal surface area of the clusters present at the location. A comparison between the predictions of the novel model with both atraditional model treating the size distribution of the clusters in the actual cluster population and the experimental observationsvalidate the novel model.© 2005 The Electrochemical Society. DOI: 10.1149/1.2001447 All rights reserved.Manuscript submitted December 8, 2004; revised manuscript received March 11, 2005. Available electronically August 25, 2005.